Page 1
STP11NK50Z - STP11NK50ZFP
STB11NK50Z
N-CHANNEL 500V - 0.48Ω - 10A TO-220/TO-220FP/D2PAK
Zener-Protected SuperMESH™Power MOSFET
TYPE V
STB11NK50Z
STP11NK50Z
STP11NK50ZFP
■ TYPICAL R
■ EXTREMELY HIGHdv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSICCAPACITANCES
■ VERY GOOD MANUFACTURING
500 V
500 V
500 V
(on) = 0.48 Ω
DS
DSS
R
DS(on)
< 0.52 Ω
< 0.52 Ω
< 0.52 Ω
I
D
10 A
10 A
10 A
Pw
125 W
125 W
30 W
REPEATIBILITY
■ ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL (D
2
PAK VERSION)
DESCRIPTION
The SuperME SH™ series is obtained through an
extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special careis taken to ensure a very good dv/dt capability fo r the
most demanding applications. Such series com plements S T full range of hi gh voltage MOSFETs including revolutionary MDm es h™ products.
TO-220 TO-220FP
3
1
D2PAK
INTERNAL SCHEMATIC DIAGRAM
3
2
1
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
■ LIGHTING
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STB11NK50ZT4 B11NK50Z
STP11NK50Z P11NK50Z TO-220 TUBE
STP11NK50ZFP P11NK50ZFP TO-220FP TUBE
2
PAK
D
TAPE & REEL
1/12June 2003
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STP11NK50Z - STP11NK50ZF P - STB11NK50Z
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
TO-220 / D2PAK
V
DS
V
DGR
V
GS
I
D
I
D
IDM()
P
TOT
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
500 V
500 V
Gate- source Voltage ± 30 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C
10 10(*) A
6.3 6.3(*) A
Drain Current (pulsed) 40 40(*) A
Total Dissipation at TC= 25°C
125 30 W
Derating Factor 1 0.24 W/°C
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5KΩ) 4000 V
dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns
Viso Insulation Withstand Voltage (DC) -- 2500 V
T
j
T
stg
() Pulse width limited by safe operating area
(1) I
≤10A, di/dt ≤200A/µs,VDD≤ V
SD
(*) Limited only by maximum temperature allowed
Operating Junction Temperature
Storage Temperature
(BR)DSS,Tj≤TJMAX.
-55 to 150
-55 to 150
TO-220FP
°C
°C
THERMAL DATA
2
TO-220 / D
PAK
Rthj-case Thermal Resistance Junction-case Max 1 4.2 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose
TO-220FP
300 °C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
= 25 °C, ID=IAR,VDD=50V)
j
10 A
190 mJ
GATE-SOURCE ZENER DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
GSO
Gate-Source Breakdown
Igs=± 1mA (Open Drain) 30 V
Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integ rated Zener diodes thus avoid the
usage of external components.
2/12
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STP11NK50Z - S TP11NK50Z FP - STB11NK50Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OT HERWISE SPECIFIED)
ON/OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Zero Gate Voltage
Drain Current (V
GS
=0)
Gate-body Leakage
Current (V
DS
=0)
Gate Threshold Voltage
Static Drain-source On
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(1) Forward Transconductance VDS=15V,ID= 5 A 7.7 S
fs
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
(3) Equivalent Output
C
oss eq.
C
iss
C
oss
C
rss
Capacitance
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
ID= 1mA, VGS= 0 500 V
V
= Max Rating
DS
VDS= Max Rating, TC= 125 °C
V
= ± 20V ±10 µA
GS
V
DS=VGS,ID
= 100µA
3 3.75 4.5 V
1
50
VGS=10V,ID= 5 A 0.48 0.52 Ω
=25V,f=1MHz,VGS= 0 1390
V
DS
173
42
VGS=0V,VDS= 0V to 400V 110 pF
VDD=250V,ID= 5.5 A
RG= 4.7Ω VGS=10V
14.5
18
(Resistive Load see, Figure 3)
=400V,ID= 11.4 A,
V
DD
V
=10V
GS
49
10
68
25
µA
µA
pF
pF
pF
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
Turn-off Delay Time
t
f
Fall Time
VDD= 250 V, ID= 5.5 A
R
=4.7ΩVGS=10V
G
41
15
(Resistive Load see, Figure 3)
t
r(Voff)
t
t
Off-voltage Rise Time
f
c
Fall Time
Cross-over Time
= 400V, ID= 11.4 A,
V
DD
RG=4.7Ω, VGS= 10V
(Inductive Load see, Figure 5)
11.5
12
27
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD(1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
Source-drain Current
(2)
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
is defined as a constant equivalent capacitance giving the same charging time as C
oss eq.
.
V
DSS
ISD=10A,VGS=0
I
SD
VDD=36V,Tj= 150°C
(see test circuit, Figure 5)
= 10 A, di/dt = 100A/µs
308
2.4
16
when VDSincreases from 0 to 80%
oss
10
40
1.6 V
ns
ns
ns
ns
ns
A
A
ns
nC
A
3/12
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STP11NK50Z - STP11NK50ZF P - STB11NK50Z
Safe Operating Area For TO-220 / D2PAK
Thermal Impedance For TO-220 / D2PAK
Safe Operating Area For TO-220FP
Thermal Impedance For TO-220FP
Output Characteristics
4/12
Transfer Characteristics
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STP11NK50Z - S TP11NK50Z FP - STB11NK50Z
Static Drain-source On ResistanceTransconductance
Gate Charge vs Gate-so urce Voltage Capacitance Variations
Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature
5/12
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STP11NK50Z - STP11NK50ZF P - STB11NK50Z
Source-drain Diode Forward Characteristics Normalized BVDSS vs Temperatu re
Maximum Avalanche Energy vs Temperature
6/12
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STP11NK50Z - S TP11NK50Z FP - STB11NK50Z
Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery T imes
Fig. 4: Gate Charge tes t Circuit
7/12
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STP11NK50Z - STP11NK50ZF P - STB11NK50Z
TO-220 MECHANICAL DATA
DIM.
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1.15 1.70 0.045 0.066
c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137
øP 3.75 3.85 0.147 0.151
Q 2.65 2.95 0.104 0.116
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
8/12
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STP11NK50Z - S TP11NK50Z FP - STB11NK50Z
TO-220FP MECHANICAL DATA
DIM.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
E
A
D
B
L3
L6
L7
F1
F
G1
H
F2
123
L4
L2
L5
G
9/12
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STP11NK50Z - STP11NK50ZF P - STB11NK50Z
D2PAK MECHANICAL DATA
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009
B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067
C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.048 0.053
D 8.95 9.35 0.352 0.368
D1 8 0.315
E 10 10.4 0.393
E1 8.5 0.334
G 4.88 5.28 0.192 0.208
L 15 15.85 0.590 0.625
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068
mm. inch
M 2.4 3.2 0.094 0.126
R 0.4 0.015
V2 0º 4º
3
10/12
1
Page 11
STP11NK50Z - S TP11NK50Z FP - STB11NK50Z
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT (suffix ”T4”)*
TUBE SHIPMENT (no suffix)*
REEL MECHANICAL DATA
DIM.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0795
G 24.4 26.4 0.960 1.039
N 100 3.937
T 30.4 1.197
mm inch
MIN. MAX. MIN. MAX.
TAPE MECHANICAL DATA
DIM.
A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626
D 1.5 1.6 0.059 0.063
D1 1.59 1.61 0.062 0.063
E 1.65 1.85 0.065 0.073
F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0.075 0.082
R 50 1.574
T 0.25 0.35 0.0098 0.0137
W 23.7 24.3 0.933 0.956
* on sales ty pe
mm inch
MIN. MAX. MIN. MAX.
BASE QTY BULK QTY
1000 1000
11/12
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STP11NK50Z - STP11NK50ZF P - STB11NK50Z
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of u se of such inf ormat ion nor for any in fring ement of p aten ts or othe r ri ghts of th ird p arties whic h may resul t f rom
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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© The ST logo is a registered trademark of STMicroelectronics
© 2003 STMicroelectronics - Printed in Italy - All Rights Reserved
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STMicroelectronics GROUP OF COMPANIES
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12/12
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