Datasheet STP11NC40FP, STP11NC40 Datasheet (SGS Thomson Microelectronics)

Page 1
STP11NC40, STP11NC40FP
N-CH A NNEL 400V - 0.44 - 9.5A TO-220/TO-220FP
PowerMESH™II Power MOSFET
TYPE V
STP11NC40 STP11NC40FP
TYPICAL R
EXTREMELY HIGH dv /d t CAPABILITY
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
400 V 400 V
(on) = 0.44
DS
DSS
R
DS(on)
< 0.55 < 0.55
I
D
9.5 A
9.5 A(*)
Pw
120 W
30 W
DESCRIPTION
The PowerMESH generation of MESH OVERLAY
II is the evolution of the first
™. The layout re-
finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lea d­ing edge for what concerns swithing speed, gate charge and ruggedness.
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
SWITH MODE POWER SUPPLI ES ( SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
3
2
1
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STP11NC40 P11NC40 TO-220 TUBE
STP11NC40FP P11NC40FP TO-220FP TUBE
1/10January 2002
Page 2
STP11NC40, STP11NC40FP
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP11NC40 STP11NC40FP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt (1) Peak Diode Recovery voltage slope 3.5 V/ns
V
ISO
T
j
T
stg
(l) Pulse wi dth limited by safe operating area
9.5A, di/dt 100A/µs, VDD V
(1) I
SD
(*) Limited only by maximum temperature allowed
Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k)
400 V 400 V
Gate- source Voltage ± 30 V
Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C
(l)
Drain Current (pulsed) 38 38 (*) A Total Dissipation at TC = 25°C
9.5 9.5 (*) A 6 6 (*) A
120 30 W
Derating Factor 0.96 0.24 W/°C
Insulation Withstand Voltage (DC) - 2500 V Operating Junction Temperature
Storage Temperature
, Tj T
(BR)DSS
JMAX.
-55 to 150
-55 to 150
°C °C
THERMA L D ATA
TO-220 TO-220FP
Rthj-case Thermal Resistance Junction-case Max 1.04 4.1 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300 °C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T
max)
j
Single Pulse Avalanche Energy (starting T
= 25 °C, ID = IAR, VDD = 50 V)
j
9.5 A
300 mJ
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Drain-source Breakdown Voltage
Zero Gate Voltage Drain Current (V
GS
= 0)
Gate-body Leakage Current (V
DS
= 0) Gate Threshold Voltage Static Drain-source On
Resistance
ID = 250 µA, VGS = 0 400 V
V
= Max Rating
DS
VDS = Max Rating, TC = 125 °C V
= ± 30V ±100 nA
GS
V
= VGS, ID = 250µA
DS
234V
1
50
VGS = 10V, ID = 5 A 0.44 0.55
µA µA
2/10
Page 3
STP11NC40, STP11NC40FP
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS = 15 V, ID= 5 A 8.6 S
g
fs
C
iss
C
oss
C
rss
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
Q
g
Q
gs
Q
gd
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
f
t
r(Voff)
t
f
t
c
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pu l se duration = 300 µs, duty c ycle 1.5 %.
2. Pulse width li mited by safe operating area.
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Turn-on Delay Time Rise Time
Total Gate Charge Gate-Source Charge Gate-Drain Charge
Turn-off Delay Time Fall Time
Off-voltage Rise Time Fall Time Cross-over Time
Source-drain Current
(2)
Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time
Reverse Recovery Charge Reverse Recovery Current
= 25V, f = 1 MHz, VGS = 0 995
V
DS
VDD = 200 V, ID = 5 A RG= 4.7 VGS = 10 V (Resistive Load see, Figure 3)
= 320V, ID = 10 A,
V
DD
VGS = 10V
VDD = 320 V, ID = 5 A RG=4.7Ω VGS = 10 V (Resistive Load see, Figure 3)
= 320V, ID = 10 A,
V
DD
RG=4.7Ω, V
GS
= 10V
(Inductive Load see, Figure 5)
ISD = 9.5 A, VGS = 0
= 9.5 A, di/dt = 100A/µs
I
SD
V
= 100V, Tj = 150°C
DD
(see test circuit, Figure 5)
Safe Operating Area For TO-220FPSafe Operating Area For TO-220
172
25
15 18
32.5 6
15
43 15
7.5 14 23
315
2100
13.6
45.5
9.5 38
1.6 V
pF pF pF
ns ns
nC nC nC
ns ns
ns ns ns
A A
ns
nC
A
3/10
Page 4
STP11NC40, STP11NC40FP
Thermal Impedance Fo r TO-220
Output Characteristics
Thermal Impedance For TO-220FP
Transfer Characteristics
Transconductance
4/10
Static Drain-source On Resistance
Page 5
STP11NC40, STP11NC40FP
Capacitance VariationsGate Charge vs Gate-source Voltage
Normalized Gate Threshold Voltage vs Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperatur e
Normalized BVDSS vs Temperature
5/10
Page 6
STP11NC40, STP11NC40FP
Maximum Avalanche Energy vs Temperature Id vs Temperature
6/10
Page 7
STP11NC40, STP11NC40FP
Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
7/10
Page 8
STP11NC40, STP11NC40FP
E
TO-220 MECHANICAL DATA
DIM.
A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
MIN. TYP. MAX. MIN. TYP. MAX.
mm inch
A
C
D
8/10
L5
Dia.
L7
D1
L6
L2
L9
F1
G1
F
H2
G
F2
L4
P011C
Page 9
STP11NC40, STP11NC40FP
TO-220FP MECHANICAL DATA
DIM.
A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
E
A
D
B
L3
L6
L7
¯
F1
F
G1
H
G
F2
123
L2
L5
L4
9/10
Page 10
STP11NC40, STP11NC40FP
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of use of such informa tion n or for an y infring ement of patent s or other rig hts of third part ies which may resu lt from its use . No l i cen se i s
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subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
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