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STGP3NB60S
STGD3NB60S
N-CHANNEL 3A - 600V - TO-220 / DPAK
PowerMESH™ IGBT
TYPE V
STGP3NB60S
STGD3NB60S
■ HIGH INPUTIMPEDANCE(VOLTAGE DRIVEN)
■ VERY LOW ON-VO LTAGE DROP (V
■ OFF LOSSES INCLUDE TAIL CURRENT
■ ADD SUFFIX “T4” FOR ORDERIN G IN TAPE &
CES
600 V
600 V
V
CE(sat)
<1.5 V
<1.5 V
cesat
I
C
3A
3A
)
REEL (SMD VERSION)
DESCRIPTION
Using the latest h igh voltage technology based on a
patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH
™
IGBTs, with outstanding
performances. The suffix “S” identifies a fam ily
optimized achieveminimum on-voltage drop for low
frequency applications (<1k Hz ).
APPLICATIONS
■ MOTOR CONTROL
■ LIGHT DIMMER
■ STATIC RELAYS
3
3
2
1
1
DPAK
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STGP3NB60S STGD3NB60S
V
CES
V
ECR
V
GE
I
C
I
C
I
CM
P
TOT
T
stg
T
j
Collector-Emitter Voltage (VGS=0)
600 V
Reverse Battery Protection 20 V
Gate-Emitter Voltage ±20 V
Collector Current (continuous) at TC=25°C
Collector Current (continuous) at TC= 100°C
()
Collector Current (pulsed) 24 A
Total Dissipation at TC= 25°C
65 45 W
6A
3A
Derating Factor 0.32 W/°C
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C
(●) Pulsewidthlimitedbysafeoperatingarea
1/10August 2002
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STGP3NB60S - STGD3N B60S
THERMAL DATA
TO-220 DPAK
Rthj-case Thermal Resistance Junction-case Max 1.92 2.75 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 100 °C/W
Rthc-h Thermal Resistance Case-heatsink Typ 0.5 °C/W
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
BR(CES)
Collectro-Emitter Breakdown
Voltage
I
CES
I
GES
Collector cut-off
=0)
(V
GE
Gate-Emitter Leakage
Current (V
CE
=0)
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GE(th)
V
CE(sat)
Gate Threshold Voltage
Collector-Emitter Saturation
Voltage
IC= 250 µA, VGE= 0 600 V
V
= Max Rating, TC=25°C
CE
= Max Rating, TC= 125 °C
V
CE
V
=±20V,VCE= 0 ±100 nA
GE
V
CE=VGE,IC
=15V,IC=3A
V
GE
=15V,IC=1A
V
GE
= 250µA
2.5 5 V
1.2
1
10 µA
100 µA
1.5 V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
g
fs
C
ies
C
oes
C
res
Forward Transconductance
Input Capacitance
Output Capacitance 30 pF
Reverse Transfer
=25V,IC=3A
CE
V
=25V,f=1MHz,VGE=0
CE
1.7 2.5 S
255 pF
5.6 pF
Capacitance
Q
G
Q
GE
Q
GC
I
CL
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Latching Current V
= 480 V, IC=3A,
V
CE
=15V
V
GE
= 480 V , Tj = 150°C
clamp
18
5.4
5.5
12 A
RG=1KΩ
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
t
(di/dt)
Eon
Turn-on Delay Time
r
Rise Time 540 ns
Turn-on Current Slope
on
Turn-on Switching Losses
=480V,IC=3A
CC
=1KΩ,VGE=15V
R
G
= 480 V, IC= 3 A, RG=1KΩ
V
CC
VGE= 15 V, Tj = 125°C
170 ns
300
nC
nC
nC
A/µs
µJ
2/10
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STGP3NB60S - ST GD 3N B 60S
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 480 V, IC=3A,
t
c
tr(V
off
td(off)
t
f
E
(**)
off
t
c
tr(V
off
t
d(off
t
f
E
(**)
off
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by max. junction t emperature.
(**)Losses include Also the Tail (Jedec Standardization)
Cross-over Time
)
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
Cross-over Time
)
Off Voltage Rise Time
)
Delay Time
Fall Time
Turn-off Switching Loss
V
cc
=1KΩ,VGE=15V
R
GE
= 480 V, IC=3A,
V
cc
RGE=1KΩ,VGE=15V,
Tj = 150°C
1.8
1.0
3.4
0.72
1.15
2.8
1.45
3.6
1.2
1.8
µs
µs
µs
µs
mJ
µs
µs
µs
µs
mJ
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STGP3NB60S - STGD3N B60S
Thermal Impedance for T O-220
Safe Operating Area for DPAKSafe Operating Area for TO-220
Thermal Impedance for DPAK
4/10
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STGP3NB60S - ST GD 3N B 60S
Output Characteristics
Transconductance
Transfer Characteristics
Collector-Emitter On Voltage vs Temperature
Collector-Emitter On Voltage vs Collector Current Gate Threshold vs Temperature
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STGP3NB60S - STGD3N B60S
Normalized Breakdown Voltage vs Temperature
Gate Charge vs Gate-Emitter Voltage
Capacitance Variations
Total Switching L osses vs Gate Re sistance
Total Switching Lo sses vs Temperature
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Total Switching Losses vs Collector Cu rrent
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Switching Off Safe Operating Area
STGP3NB60S - ST GD 3N B 60S
Fig. 2: Test Circuit For Induct ive Load SwitchingFig. 1: Gate Charge test Circuit
7/10
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STGP3NB60S - STGD3N B60S
E
P011C
TO-220 MECHANICAL DATA
DIM.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
MIN. TYP. MAX. MIN. TYP. MAX.
mm inch
A
C
D
8/10
L5
Dia.
L7
D1
L6
L2
L9
F1
G1
F
H2
G
F2
L4
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STGP3NB60S - ST GD 3N B 60S
P032P_B
TO-252 (DPAK) MECHANICAL DATA
DIM.
A 2.20 2.40 0.087 0.094
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.213
C 0.45 0.60 0.018 0.024
C2 0.48 0.60 0.019 0.024
D 6.00 6.20 0.236 0.244
E 6.40 6.60 0.252 0.260
G 4.40 4.60 0.173 0.181
H 9.35 10.10 0.368 0.398
L2 0.8 0.031
L4 0.60 1.00 0.024 0.039
V2 0
MIN. TYP. MAX. MIN. TYP. MAX.
o
mm inch
o
8
o
0
o
0
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STGP3NB60S - STGD3N B60S
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility f or t he
consequences of use of su ch in formation nor for any in fringement of patents or other rights of third parties w hich may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously suppli ed. STMi croelect ronics pr oducts are not author ized for use as cr itical component s in li fe suppo rt devi ces or
systems without express written approval of STMicroelectronics.
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