Datasheet STGP3NB60HDFP, STGP3NB60HD Datasheet (SGS Thomson Microelectronics)

STGP3NB60HD



N-CHANNEL 3A - 600V TO-220/FP

TYPE V

ST G P3NB60HD
ST G P3NB60HDFP

■ HIGHINPUT IMPEDANCE

CES

600 V
600 V

(VOLTAGEDRIVEN)

■ LOW ON-VOLTAGEDROP (V

■ LOW GATECHARGE

■ HIGHCURRENTCAPABILITY

■ VERYHIGH FREQUENCYOPERATION

■ OFFLOSSES INCLUDETAIL CURRENT

■ CO-PACKAGEDWITH TURBOSWITCH

ANTIPARALLELDIODE

DESCRIPTION

Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH IGBTs, with outstanding
perfomances. The suffix ”H” identifies a family
optimized to achieve very low switching times for
high frequencyapplications(<120kHz).

V

CE(sat)

I

C

<2.8V
<2.8V3A3A

)

cesat

STGP3NB60HDFP

PowerMESH IGBT

3

2

1

TO-220 TO-220FP

INTERNAL SCHEMATIC DIAGRAM

3

2

1

APPLICATIONS

■ HIGHFREQUENCY MOTOR CONTROLS

■ SMPSAND PFC IN BOTH HARDSWITCH

AND RESONANTTOPOLOGIES

ABSOLUTE MAXIMUM RATINGS

Sym bol Parame t er Value Unit

STGP7NB60HD STGP7NB60HDF P

V

V

I

CM

P

T

(•) Pulse width limited by max. junction temperature

June 1999

Collec t or -Emitte r Volt age (VGS = 0) 600 600 V

CES

Gate-Emitter Voltage ± 20 ± 20 V

GE

Collec t or Curr e nt (contin uous) at Tc = 25oC6 6A

I

C

Collec t or Curr e nt (contin uous) at Tc = 100oC3 3 A

I

C

(•) Collec t or Curr e nt (pulsed) 24 24 A

Total Dissipation at Tc = 25oC7035W

tot

Derat i ng Fac t or 0.56 0. 28 W/
St orage Tem p er at u re -65 to 150

stg

Max. Operat ing Junct ion Temp er at u re 150

T

j

o

C

o

C

o

C

1/9

STGP3NB60HD/FP

THERMAL DATA

R

thj-case

R

thj-amb

R

thc-sink

Ther mal Resistanc e Junct ion-case Max 1.78 3.57
Ther mal Resistanc e Junct ion-ambient Max

Ther mal Resistanc e Case-sink Ty p

TO-220 TO- 220FP

62.5

0.5

o

C/W

o

C/W

o

C/W

ELECTRICAL CHARACTERISTICS

=25oC unless otherwise specified)

(T

j

OFF

Sym bol Parame t er Test Conditions M in. Typ. Max. U nit

V

BR(CES)

Collector-Emitter

IC=250µAVGE= 0 600 V

Break dow n Volt age

I

I

CES

GES

Collect o r cut - off

=0)

(V

GE

Gat e- Em i t t er Leakage
Current (V

CE

=0)

V

=MaxRating Tj=25oC

CE

=MaxRating Tj=125oC

V

CE

= ± 20 V VCE=0 ±100 nA

V

GE

100

1000µAµA

ON(∗)

Sym bol Parame t er Test Conditions M in. Typ. Max. U nit

V

GE(th)

Gate Th reshold

VCE=VGEIC= 250 µ A35V

Voltage

V

CE(SAT)

Collector-Emitter
Sat urat ion Volt age

VGE=15V IC=3A

=15V IC=3A Tj=125oC

V

GE

2.4

1.9

2.8 V

DYNAMIC

Sym bol Parame t er Test Conditions M in. Typ. Max. U nit

C

C

C

Q
Q

g

Q

I

CL

Forward

fs

Tr ansc on duc tance
Input Capacitanc e

ies

Out put Capacitance

oes

Reverse Transfer

res

Capacit a nc e
Tot al Gate Charge

G

Gate-Emitt er C harge

GE

Gat e- Col lect or C har ge

GC

Latc hing Curr ent V

VCE=25 V IC=3A 1.3 2.4 S

VCE=25V f=1MHz VGE= 0 160

23

4.5

VCE= 480 V IC=3A VGE=15V 21

235

33

6.6

300

43

8.6

27 nC

6

7.6

=480V RG=10Ω

clamp

T

= 150oC

j

12 A

V

pF
pF
pF

nC
nC

SWITCHINGON

Sym bol Parame t er Test Conditions M in. Typ. Max. U nit

(di/dt)

2/9

t

d(on)

t

r

Eon(❍)

Delay Time
Rise Time

Tur n-on Current Slope

on

Turn-on
Switching Losses

VCC= 480 V IC=3A

=15V RG=10Ω

V

GE

V

=480V IC=3A

CC

=10Ω VGE=15V

R

G

T

=125oC

j

16
30

400

77

ns
ns

A/µs

J

µ

STGP3NB60HD/FP

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHINGOFF

Sym bol Parame t er Test Conditions M in. Typ. Max. U nit

tr(v

t

E

E

tr(v

t

E

E

t

d(off

off

ts

t

d(off

off

ts

Cross-Over Time

c

Off Voltage Rise Time

)

off

)

Delay Time

t

Fall T ime

f

(**)

Turn-off Switching Loss

(❍)

Tot al Switching Loss
Cross-Over Time

c

Off Voltage Rise Time

)

off

Delay Time

)

Fall T ime

t

f

Turn-off Switching Loss

(**)

(❍)

Tot al Switching Loss

V

=480V IC=3A

CC

R

=10

Ω

=480V IC=3A

=10

Ω

= 125oC

V
R
T

GE

CC
GE
j

VGE=15V

VGE=15V

90
36
53
70
33

100
180

82
58

110

88

165

COLLECTOR-EMITTERDIODE

Sym bol Param e t er Tes t Conditions Min . Typ. Max. Unit

I

For ward Current

f

I

V

t

Q

I

rrm

(•) Pulse width limited by max. junction temperature
(

❍) Include recovery lossess on the STTA306 freewheeling diode

(∗) Pulsed: Pulse duration= 300µs, duty cycle 1.5%
(**)Losses Include Also The Tail (Jedec Standardization)

For ward Current pulsed

fm

For ward On- Voltage If=3A

f

Reverse Recovery Time

rr

Reverse Recovery Charge

rr

Reverse Recovery Current

=3A Tj= 125oC

I

f

If=3A VR=200 V
dI/dt = 100 A/µST

= 125oC

j

1.6

1.4
87

160

3.7

3

24

2.0 V

ns
ns
ns
ns

µJ
µ

ns
ns
ns
ns

µ
µ

J

J
J

A
A

V

ns

nC

A

ThermalImpedeanceFor TO-220 ThermalImpedeanceFor TO-220FP

3/9

STGP3NB60HD/FP

OutputCharacteristics

Transconductance

TransferCharacteristics

Collector-EmitterOnVoltagevs Temperature

Collector-EmitterOnVoltagevs Collector Current

4/9

Gate Thresholdvs Temperature

STGP3NB60HD/FP

NormalizedBreakdown Voltage vs Temperature

Gate Chargevs Gate-EmitterVoltage

CapacitanceVariations

TotalSwitchingLossesvs Gate Resistance

TotalSwitchingLossesvs Temperature

TotalSwitchingLossesvs Collector Current

5/9

STGP3NB60HD/FP

SwitchingOff SafeOperatingArea DiodeForward Voltage

Fig. 1:

Gate Charge test Circuit

Fig. 3: Switching Waveforms

Fig. 2:

TestCircuitFor Inductive LoadSwitching

6/9

TO-220 MECHANICALDATA

STGP3NB60HD/FP

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409

L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

mm inch

E

A

L4

D

F2

F1

G1

H2

G

F

P011C

C

D1

L2

Dia.

L5

L7

L6

L9

7/9

STGP3NB60HD/FP

TO-220FP MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.098 0.108

E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409

L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

mm inch

E

A

D

B

L3

L6

L7

¯

F1

F

G1

H

G

F2

123

L2

L4

8/9

STGP3NB60HD/FP

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granted by implication orotherwise under any patent or patentrights of STMicroelectronics. Specificationmentioned in this publicationare
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