Datasheet STGP20NB60K Datasheet (SGS Thomson Microelectronics)

STGP20NB60K

N-CHANNEL 20A - 600V - TO-220

PowerMesh IGBT

PRELIMINARY DATA

TYPE V

CES

V

CE(sat)

I

C

STGP20NB60K 600 V < 2.8 V20A

■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)

■ LOW ON-VOLTAGE DROP (V

■ LOW ON-LOSSES

■ LOW GATECHARGE

■ HIGH CURRENT CAPABILITY

■ OFF LOSSES INCLUDE TAIL CURRENT

■ VERY HIGH FREQUENCY OPERATION

■ SHORT CIRCUIT RATED

■ LATCH CURRENT FREE OPERATION

cesat

)

DESCRIPTION

Using thelatest highvoltage technology basedon a
patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESHIGBTs, with outstanding
performances. The suffix “K” identifies a family
optimized for high frequency motor control
applications with short circuit withstand capability.

APPLICATIONS

■ HIGH FREQUENCY MOTOR CONTROLS

■ U.P.S.

■ WELDING EQUIPMENTS

3

2

1

TO-220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

CES

V

ECR

V

GE

I

C

I

C

I

CM

Tsc Short Circuit Withstand 10

P

TOT

T

stg

T

j

June 2000

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

Collector-Emitter Voltage (VGS=0)

600 V
Emitter-Collector Voltage 20 V
Gate-Emitter Voltage ±20 V
Collector Current (continuos) at TC=25°C
Collector Current (continuos) at TC= 100°C

(■)

Collector Current (pulsed) 80 A

TotalDissipation at TC=25°C

40 A
20 A

125 W
Derating Factor 1 W/°C
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C

µs

1/6

STGP20NB60K

THERMAL DATA

Rthj-case Thermal Resistance Junction-case Max 1.0 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W

Rthc-h Thermal Resistance Case-heatsink Typ 0.5 °C/W

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

BR(CES)

I

CES

I

GES

ON (1)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GE(th)

V

CE(sat)

Collectro-Emitter Breakdown
Voltage

Collector cut-off
(V

=0)

GE

Gate-Emitter Leakage
Current (V

CE

=0)

Gate Threshold Voltage
Collector-Emitter Saturation

Voltage

I

= 250 µA, VGE=0

C

= Max Rating, TC=25°C

V

CE

V

= Max Rating, TC= 125 °C

CE

= ±20V , VCE=0

V

GE

V

CE=VGE,IC

V

= 15V, IC=20A

GE

V

=15V, IC= 20 A, Tj =125°C

GE

= 250µA

600 V

10 µA

100 µA

±100 nA

57V

2.3 2.8 V

1.9 V

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

fs

C

ies

C

oes

C

res

Q

g

Q

ge

Q

gc

twsc

Forward Transconductance
Input Capacitance
Output Capacitance 200 pF
Reverse Transfer

Capacitance
TotalGate Charge
Gate-Emitter Charge T.B.D. nC

Gate-Collector Charge T.B.D. nC
Short Circuit Withstand Time

V

=25V,IC=20 A

CE

= 25V, f = 1 MHz, VGE=0

V

CE

V

= 480V, IC=20A,

CE

= 15V

V

GE

V

= 0.5 BVces , VGE=15V,

ce

Tj = 125°C,R

=10Ω

G

8S

1300 pF

30 pF

90 nC

10 µs

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

t

r

(di/dt)

Eon Turn-on Switching Losses 300 µJ

Turn-on Delay Time
Rise Time 70 ns

Turn-on Current Slope

on

V

= 480 V, IC=20A

CC

=10Ω,VGE=15V

R

G

V

= 480V, IC=20ARG=10Ω

CC

= 15 V,Tj= 125°C

V

GE

20 ns

350 A/µs

2/6

STGP20NB60K

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

c

t

r(Voff

t

d(off

t

f

E

(**)

off

E

ts

t

c

t

r(Voff

t

d(off

t

f

E

(**)

off

E

ts

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.

2. Pulse width limited by max. junction temperature.

(**)Losses include Also the Tail (Jedec Standardization)

Cross-over Time

120 ns

) Off Voltage Rise Time 35 ns

= 480 V, IC=20A,

V

) Delay Time 130 ns

cc

=10Ω,VGE=15V

R

GE

Fall Time 80 ns
Turn-off Switching Loss 0.45 mJ
TotalSwitching Loss 0.6 mJ
Cross-over Time

V

)

Off Voltage Rise Time 55 ns

)

Delay Time 160 ns

= 480 V, IC=20A,

cc

=10Ω,VGE=15V

R

GE

Tj = 125 °C

190 ns

Fall Time 150 ns
Turn-off Switching Loss 0.75 mJ
TotalSwitching Loss 1.05 mJ

3/6

STGP20NB60K

Fig. 2: Test Circuit For Inductive Load SwitchingFig. 1: Gate Charge test Circuit

4/6

TO-220 MECHANICAL DATA

STGP20NB60K

DIM.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203

G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409

L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

MIN. TYP. MAX. MIN. TYP. MAX.

A

C

mm inch

E

D

L5

L7

Dia.

D1

L6

L2

L9

L4

F2

F1

G1

H2

G

F

P011C

5/6

STGP20NB60K

6/6

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granted by implication or otherwise underany patent or patent rights of STMicroelectronics. Specification mentioned inthis publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use ascritical components in life support devices or systems withoutexpress written approval of STMicroelectronics.

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