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STGP20NB37LZ
N-CHANNEL CLAMPED 20A TO-220
INTERNALLYCLAMPED PowerMESH
TYPE V
CES
ST G P20NB37L Z CLAMP ED < 2.0 V 20 A
■ POLYSILICONGATEVOLTAGE DRIVEN
■ LOW THRESHOLDVOLTAGE
■ LOW ON-VOLTAGEDROP
■ HIGHCURRENT CAPABILITY
■ HIGHVOLTAGECLAMPINGFEATURE
DESCRIPTION
Using the latest high voltage technology based
on patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs with
outstandingperformances.
The built in collector-gate zener exhibits a very
precise active clamping while the gate-emitter
zenersuppliesan ESDprotection.
APPLICATIONS
■ AUTOMOTIVEIGNITION
V
CE(sat )
I
C
IGBT
PRELIMINARY DATA
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Value Unit
V
V
V
I
CM
E
P
E
T
(•) Pulse width limited by safe operating area
April 2000
Collector-Emitter Voltage (VGS=0) CLAMPED V
CES
Reverse Battery Protection 20 V
ECR
Gate-Emitter Voltage CLAMPED V
GE
I
Coll ect or Current (continu ous ) at Tc=25oC40A
C
I
Coll ect or Current (continu ous ) at Tc=100oC30A
C
(•) Coll ect or Current (pu lsed) 80 A
Single Pulse Energy T c = 25oC 700 mJ
AS
Tot al Diss ipa t ion at Tc=25oC 150 W
tot
Derating Facto r 1 W/
ESD (H uman Body Mo del) 4 KV
SD
St orage T emperat u re -65 to 175
stg
Max. Operat in g Junc t ion Tem p er at u r e 175
T
j
o
C
o
C
o
C
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STGP20NB37LZ
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambie nt Max
Ther mal Resistanc e Case-sink Ty p
1
62.5
0.2
o
C/W
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
=25oC unless otherwise specified)
(T
j
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
BV
(CES)
(ECR)
Clamped Volt a ge IC=2mA VGE=0 TC=-40oC
I
=2mA VGE=0 TC=25oC
C
=2mA VGE=0 TC=150oC
I
C
Emitter C ollector
IC=75mA TC=25oC20 28 V
380
375
370
405
400
395
430
425
420
Break -down V olt ag e
BV
GE
Gate Emitter
IG=± 2mA 121416V
Break -down V olt ag e
I
CES
I
GES
Collect o r cut- off
Current (VG E = 0)
Gat e- Em i t t er Leak age
VCE=15V VGE=0 TC=150oC
= 200 V VGE=0 TC= 150oC
V
CE
VGE= ± 10 V VCE=0 ±300 ± 660 ± 1000 µA
10
100
Current (VCE = 0)
R
Gate Emitter Resistance 10 15 30 K
GE
ON(∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GE(th)
V
CE(SAT)
Gate Threshold
Voltage
Collector-Emitter
Sat urat ion Voltage
VCE=VGEIC= 250µATC=-40oC
V
CE=VGEIC
V
CE=VGEIC
= 250 µ ATC=25oC
= 250µATC=150oC
VGE=4.5V IC=10A TC=25oC
=4.5V IC=10A TC=150oC
V
GE
=4.5V IC=20A TC=25oC
V
GE
=4.5V IC=20A TC=150oC
V
GE
1.2
1.0
0.6
1.4 2
1.1
1.0
1.35
1.25
1.8
1.7
2.0
2.0
V
V
V
µ
µA
V
V
V
V
V
V
V
A
Ω
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
C
C
C
Q
2/6
Forward
fs
VCE=25V IC=20A 35 S
Tr ansc on duc tance
Input Capaci t anc e
ies
Out put Capac it ance
oes
Reverse Tr ansfer
res
VCE=25V f=1MHz VGE= 0 2300
165
28
Capacit a nc e
Gat e Ch ar ge VCE= 280 V IC=20A VGE=5V 51 nC
G
pF
pF
pF
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STGP20NB37LZ
FUNCTIONALCHARACTERISTICS
Symbol Parameter Test Conditions Min. Typ. Max. Unit
II Lat c hing C urrent V
R
U.I.S. Funct ion al T e s t
Open Sec ondary Coil
R
R
SWITCHINGON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
(di/dt)
Delay T im e
t
Rise Tim e
r
Tur n-on Current Slope VCC=250V IC=20A
on
VCC= 250 V IC=20A
V
R
E
Turn-on
on
Switching Losses
VCC=250V IC=20A TC=25oC
R
SWITCHINGOFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
tr(v
td(
E
off
t
tr(v
td(
E
off
(•) Pulse width limited by safe operatingarea (*) Pulsed:Pulse duration= 300 ms, duty cycle 1.5 % (**)LossesInclude AlsoThe Tail(jedec Standardization)
Cross-O ver Time
c
Off Voltage Rise Time
)
off
Fall Time
t
f
Off Volt age Delay T im e
)
off
(**)
Turn-off Switching Loss
Cross-O ver Time
c
Off Voltage Rise Time
)
off
Fall Time
t
f
Off Volt age Delay T im e
)
off
(**)
Turn-off Switching Loss
V
R
V
R
T
= 250 V VGE=4.5V
CLAM P
=1K
Ω
Ω
Ω
V
GE
L=3mH T
=4.5V TC=150oC
GOFF
=1 KΩ L=3mH TC=25oC
GOFF
=1 K
GOFF
=4.5V RG=1KΩ
GE
=1KΩ VGE=4.5V
G
=1 K
G
=250V IC=20A
CC
=1KΩ VGE=4.5V
GE
=250V IC=20A
CC
=1KΩ VGE=4.5V
GE
= 150oC
C
T
= 150oC
C
= 150oC
C
80 A
21.6
15
26
18
2.3
0.6
550 A/ µ s
8.8
9.2
4.8
2.6
2.0
11.5
11.8
7.8
3.5
3.9
12.0
17.8
A
A
µ
µs
mJ
mJ
µ
µs
µs
µs
mJ
µ
µs
µ
µs
mJ
s
s
s
s
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STGP20NB37LZ
Fig. 1:
Fig. 3:
UnclampedInductive Load Test Circuit
SwitchingTimes Test Circuits For
ResistiveLoad
Fig. 2:
Fig. 4:
UnclampedInductive Waveform
GateCharge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
AndDIode RecoveryTimes
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Page 5
TO-220 MECHANICALDATA
STGP20NB37LZ
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
E
A
L4
D
F2
F1
G1
H2
G
F
P011C
C
D1
L2
Dia.
L5
L7
L6
L9
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STGP20NB37LZ
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. Thispublication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademarkof STMicroelectronics
2000 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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