Datasheet STGP14NC60KD, STGF14NC60KD, STGB14NC60KD Datasheet (ST)

STGP14NC60KD - STGF14NC60KD

1

3

1

3

3

STGB14NC60KD

N-CHANNEL 14A - 600V - TO-220/TO-220FP/D2PAK

SHORT CIRCUIT RATED PowerMESH™ IGBT

Table 1: General Feature s

TYPE V

STGB14NC60KD
STGF14NC60KD
STGP14NC60KD

■ LOWER ON-VOLTAGE DROP (V

■ OFF LOSSES INCLUDE TAIL CURRENT

■ LOWER C

■ SWITCHING LOSSES INCLUDE DIODE

RES

CESVCE(sat)

600 V
600 V
600 V

/ C

RATIO

IES

@25°C
< 2.5 V

< 2.5 V
< 2.5 V

(Max)

cesat

IC (#)

@100°C

14 A

7 A

14 A

)

RECOVERY ENERGY

■ VERY SOFT U LTRA F AST REC OVER Y

ANTIPARALLEL DIODE

■ NEW GENERATION PRODUCTS WITH

TIGHTER PARAMETER DISTRUBUTION

DESCRIPTION

Using the latest high voltage technology bas ed on
a patented strip layout, STMicroelectronics has
design ed an adva nced fam ily of IGBT s, the P ow
erMESH™ IGBTs, with outstanding performances.
The suffix “K” identifies a family optimized for high
freque ncy mot or cont rol appl icat ions wi th shor t cir
cuit withstand capability.

APPLICATIONS

■ HIGH FREQUENCY INVERTERS

■ SMPS and PFC IN BOTH HARD SWITCH AND

RESONANT TOPOLOGIES

■ MOTOR DRIVERS

Figure 1: Package

2

TO-220

2

PAK

D

Figure 2: Internal Schematic Diagram

-

-

2

TO-220FP

1

Table 2: Order Codes

SALES TYPE MARKING PACKAGE PACKAGING

STGB14NC60KDT4 GB14NC60KD

STGF14NC60KD GF14NC60KD TO-220FP TUBE
STGP14NC60KD GP14NC60KD TO-220 TUBE

D2PAK

TAPE & REEL

Rev.2

1/14July 2005

STGP14NC60KD - STGF14NC60KD - STGB14NC60KD

Table 3: Abso lute Ma ximu m ratings

Symbol Parameter Value Unit

STGB14NC60KD
STGP14NC60KD

V

Collector-Emitter Voltage (VGS = 0)

CES

V

Emitter-Collector Voltage 20 V

ECR

V

Gate-Emitter Voltage ±20 V

GE

I

Collector Current (continuous) at TC = 25°C (#)

C

I

Collector Current (continuous) at TC = 100°C (#)

C

I

()

Collector Current (pulsed) 50 A

CM

I

Diode RMS Forward Current at TC = 25°C

F

P

Total Dissipation at TC = 25°C

TOT

25 11 A
14 7 A

80 25 W

Derating Factor 0.64 0.20 W/°C

V

Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25°C) -- 2500 V

ISO

T

Storage Temperature

stg

T

Operating Junction Temperature

j

() Pulse width limited by Max Junction Temperature.

Table 4: Thermal Data

Min. Typ. Max.

Rthj-case Thermal Resistance Junction-case TO-220

D²PAK

TO-220FP 5.0 °C/W

Rthj-amb Thermal Resistance Junction-ambient 62.5 °C/W

T

Maximum Lead Temperature for Soldering

L

Purpose (1.6 mm from case, for 10 sec.)

STGF14NC60KD

600 V

20 A

– 55 to 150 °C

1.56 °C/W

300 °C

ELECTRICAL CHARACTERISTICS (T

=25°C UNLESS OTHERWISE SPECIFIED)

CASE

Table 5: Main Parameters

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

BR(CES)

V

V

(#) Calculated according to the iterative formula:

ICTC()

2/14

Collector-Emitter
Breakdown Voltage

I

Collector cut-off Current

CES

(VGE = 0)

I

Gate-Emitter Leakage

GES

Current (VCE = 0)
Gate Threshold Voltage

GE(th)

Collector-Emitter Saturation

CE(sat)

Voltage

T

--------------------------------------------------------------------------------------------------

=

R

THJ C–VCESAT MAX()TCIC

JMAXTC

IC= 1 mA, VGE= 0 600 V

VCE= Max Rating, TC= 25°C
VCE= Max Rating, TC= 125°C

10

1

VGE= ±20V , VCE= 0 ±100 nA

VCE= VGE, IC= 250 µA
VGE= 15V, IC= 7A

VGE= 15V, IC= 7A, Tc= 125°C

–

,()×

5 7 V

2.0

1.8

2.5 V

µA

mA

V

STGP14NC60KD - STGF14NC60KD - STGB14NC60KD

ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 6: Dynamic

Symbol Parameter Test Conditions Min. Typ. Max. Unit

gfs (1)

C

C

C

Q
Q

t

Forward Transconductance
Input Capacitance

ies

Output Capacitance 86 pF

oes

Reverse Transfer

res

Capacitance

Q

Total Gate Charge

g

Gate-Emitter Charge

ge

Gate-Collector Charge

gc

Short Circuit Withstand Time VCE = 0.5 V

scw

Table 7: Switching On

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

(di/dt)

t

d(on)

(di/dt)

Turn-on Delay Time
Current Rise Time

t

r

Turn-on Current Slope

on

Turn-on Delay Time
Current Rise Time

t

r

Turn-on Current Slope

on

Table 8: Switching Off

Symbol Parameter Test Conditions Min. Typ. Max. Unit

tr(V

)

Off Voltage Rise Time

off

td(

tr(V

td(

Turn-off Delay Time

)

off

Current Fall Time

t

f

)

Off Voltage Rise Time

off

Turn-off Delay Time

)

off

Current Fall Time

t

f

VCE = 15 V , IC = 7 A 3 S

VCE = 25 V, f= 1 MHz, VGE = 0

760 pF

15.5 pF

VCE = 390 V, IC = 7 A,
VGE = 15 V
(see Figure 21)

RG = 10 Ω, VGE = 12 V

BR(CES),Tj

= 125°C,

VCC = 390 V, IC = 7 A
RG= 10 Ω, VGE= 15V, Tj= 25°C
(see Figure 19)

VCC = 390 V, IC = 7 A
RG= 10 Ω, VGE= 15V, Tj= 125°C
(see Figure 19)

Vcc = 390 V, IC = 7 A,
RGE = 10 Ω , VGE = 15 V
TJ = 25 °C

34.4

8.1

16.4

10 µs

22.5

8.5

700

22

9.5

680

60

116

75

(see Figure 19)
Vcc = 390 V, IC = 7 A,

RGE = 10 Ω , VGE = 15 V
Tj = 125 °C
(see Figure 19)

24
196
144

nC
nC
nC

ns
ns

A/µs

ns
ns

A/µs

ns
ns
ns

ns
ns
ns

Table 9: Switching Energy

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Eon (2)

E

off

E

Eon (2)

E

off

E

(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
(2) Eon is the turn-on l osses when a typical di ode i s used i n the test ci rcuit in fi gure 2. If the IG BT is o ffered in a pac kage with a co -pack diode ,
the co-pack diode is used as external diode. IGBTs & DIODE are at the same temperature (25°C and 125°C)
(3)Turn-off losses include also the tail of the collector current.

Turn-on Switching Losses
Turn-off Switching Losses

(3)

Total Switching Losses

ts

Turn-on Switching Losses
Turn-off Switching Losses

(3)

Total Switching Losses

ts

VCC = 390 V, IC = 7 A
RG= 10 Ω, VGE= 15V, Tj= 25°C
(see Figure 19)

VCC = 390 V, IC = 7 A
RG= 10 Ω, VGE= 15V, Tj= 125°C
(see Figure 19)

82
155
237

131
370
501

µJ
µJ
µJ

µJ
µJ
µJ

3/14

STGP14NC60KD - STGF14NC60KD - STGB14NC60KD

Table 10: Collector-Emitter Diode

Symbol Parameter Test Condiction Min. Typ. Max. Unit

V

Forward O n-Voltage If = 3.5 A

f

If = 3.5 A, Tj = 125 °C

t

Reverse Recovery Time

rr

t

a

Q

I

Q

I

Reverse Recovery Charge

rr

Reverse Recovery Current

rrm

Softness factor of the diode

S

t

Reverse Recovery Time

rr

t

a

Reverse Recovery Charge

rr

Reverse Recovery Current

rrm

Softness factor of the diode

S

If = 7 A, VR = 40 V,
Tj = 25 °C, di/dt = 100 A/µs

0.68

If = 7 A, VR = 40 V,
Tj = 125 °C, di/dt = 100 A/µs

0.79

1.3

1.1
37

22
40

2.1

61
34
98

3.2

1.9

V
V

ns
ns

nC

A

ns
ns

nC

A

4/14

STGP14NC60KD - STGF14NC60KD - STGB14NC60KD

Figure 3: Output Characteristics

Figure 4: Transconductance

Figure 6: Transf er Characterist ics

Figure 7: Collector-Emitter On Voltage vs Tem­perature

Figure 5: Collector-Emitter On Voltage vs Col­lector Current

Figure 8 : Nor malize d G ate T hresh old v s Te m­perature

5/14

STGP14NC60KD - STGF14NC60KD - STGB14NC60KD

Figure 9: Normalized Breakdown Voltage vs Temperature

Figure 10: Capacitance Variations

Figure 12: Gate Charge vs Gate-Emitte r Volt­age

Figure 13: Tot al Switchin g Losse s vs Temper­ature

Figure 11: Total Switching Losses vs Gate Re­sistance

6/14

Figure 14: Total Switching Losses vs Collector Current

STGP14NC60KD - STGF14NC60KD - STGB14NC60KD

Figure 15: Thermal Impedance For TO-220/
D²PAK

Figure 16: Thermal Impedance For TO-220FP

Figure 17: Turn-Off SOA

Figure 18: Emitter-Collector Diode Characteristics

7/14

STGP14NC60KD - STGF14NC60KD - STGB14NC60KD

Figure 19: Test Circuit for Inductive Load Switching

Figure 20: Switching Waveforms

Figure 21: Gate Charge Test Circuit

Figure 22: Diode Recovery Times Waveform

8/14

STGP14NC60KD - STGF14NC60KD - STGB14NC60KD

D2PAK MECHANICAL DATA

TO-247 MECHANICAL DATA

DIM.

A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009

B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368
D1 8 0.315

E 10 10.4 0.393
E1 8.5 0.334

G 4.88 5.28 0.192 0.208

L 15 15.85 0.590 0.625
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068

M 2.4 3.2 0.094 0.126

R0.4 0.015
V2 0º 4º

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

3

1

9/14

STGP14NC60KD - STGF14NC60KD - STGB14NC60KD

TO-220FP MECHANICAL DATA

DIM.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409

L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

E

A

D

B

L3

L6

L7

F1

F

10/14

G1

H

F2

123

L4

L2

L5

G

STGP14NC60KD - STGF14NC60KD - STGB14NC60KD

TO-220 MECHANICAL DATA

DIM.

A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034

b1 1.15 1.70 0.045 0.066

c 0.49 0.70 0.019 0.027

D 15.25 15.75 0.60 0.620

E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106

e1 4.95 5.15 0.194 0.202

F 1.23 1.32 0.048 0.052

H1 6.20 6.60 0.244 0.256

J1 2.40 2.72 0.094 0.107

L 13 14 0.511 0.551

L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137

øP

Q 2.65 2.95 0.104 0.116

MIN. TYP M AX. MIN. TYP. MAX.

3.75 3.85 0.147 0.151

mm. inch

11/14

STGP14NC60KD - STGF14NC60KD - STGB14NC60KD

D2PAK FOOTPRINT

TAPE AND REEL SHIPMENT

TAPE MECHANICAL DAT A

DIM.

A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626

D 1.5 1.6 0.059 0.063

D1 1.59 1.61 0.062 0.063

E 1.65 1.85 0.065 0.073

F 11.4 11.6 0.449 0. 456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0.075 0.082

R 50 1.574

T 0.25 0.35 0.0098 0.0137
W 23.7 24.3 0.933 0.956

* on sales type

mm inch

MIN. MAX. MIN. MAX.

REEL MECHANICAL DATA

DIM.

A 330 12.992
B 1.5 0.059
C 12.8 13.2 0. 504 0.520
D 20.2 0795
G 24.4 26.4 0.960 1.039
N 100 3.937
T 30.4 1.197

mm inch

MIN. MAX. MIN. MAX.

BASE QTY BULK QTY

1000 1000

12/14

STGP14NC60KD - STGF14NC60KD - STGB14NC60KD

Table 11: Revisi on His t ory

Date Revision Description of Changes

14-Jun-2005 1 New release

22-Jul-2005 2 Complete version

13/14

STGP14NC60KD - STGF14NC60KD - STGB14NC60KD

I

s

o

d

b

t

t

t

a

nformation furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequence

f use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is grante
y implicatio n or ot h er wis e under an y pat e nt or pa te nt r igh ts of STMi c r oel ec tro ni c s. Sp ec i fi ca ti on s me nti o ne d in th is p ub li c ati on ar e s ub jec

o change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are no

uthorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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