Datasheet STGP12NB60HD Datasheet (SGS Thomson Microelectronics)

STGP12NB60HD

N-CHANNEL 12A - 600V TO-220

PowerMESH™ IGBT

TYPE V

STGP12NB60HD 600 V < 2.8 V12A

■ HIGH INPUT IMPEDANCE

■ LOW ON-VOLTAGE DROP (V

■ OFF LOSSES INCLUDE TAIL CURRENT

■ LOW GATE CHARGE

■ HIGH CURRENT CAPABILITY

■ VERY HIGH FREQUENCY OPERATION

■ CO-PACKAGED WITH TURBOSWITCHT

■ ANTIPARALLEL DIODE

CES

V

CE(sat)

cesat

I

C

)

DESCRIPTION

Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics ha s de­signed an advanced family of IGBTs, the Power­MESH™ I GBTs, with outstanding perfomances.

The suffix "H" identifies a family o ptimized for high
frequency app lications (up to 50kHz)in o rder to

achieve very high switching performances (reduced
tfall) mantaining a low voltage drop.

APPLICATIONS

■ HIGH FREQUENCY MOTOR CONTROLS

■ SMPS and PFC IN BOTH HARD SWITCH AND

RESONANT TOPOLOGIES

■ UP S

3

2

1

TO-220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

CES

V

ECR

V

GE

I

C

I

C

ICM()

P

TOT

T

stg

T

j

() Pulsewidthlimitedbysafeoperatingarea

Collector-Emitter Voltage (VGS=0)
Emitter-Collector Voltage 20 V
Gate-Emitter Voltage ± 20 V
Collector Current (continuous) at TC=25°C
Collector Current (continuous) at TC=100°C
Collector Current (pulsed) 96 A
Total Dissipation at TC= 25°C
Derating Factor 0.8 W/°C
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C

600 V

24 A
12 A

100 W

1/9July 2003

STGP12NB60HD

THERMAL DATA

Rthj-case Thermal Resistance Junction-case Max 1.25 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W

Rthc-sink Thermal Resistance Case-sink Typ 0.5 °C/W

ELECTRICAL CHARACTERISTICS (T

= 25 °C UNLESS OTHERWISE SPECIFIED)

CASE

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

BR(CES)

Collector-Emitter Breakdown

IC= 250 µA, VGE= 0 600 V

Voltage

I

CES

I

GES

Collector cut-off

=0)

(V

GE

Gate-Emitter Leakage
Current (V

CE

=0)

V

= Max Rating, TC=25°C

CE

VCE= Max Rating, TC=125°C
V

= ± 20V , VCE= 0 ±100 nA

GE

10 µA

100 µA

ON (1)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GE(th)

V

CE(sat)

Gate Threshold Voltage
Collector-Emitter Saturation

Voltage

V

CE=VGE,IC

VGE= 15V, IC=12A
VGE=15V,IC=12A,Tj=125°C

=250µA

35V

2.0 2.8 V

1.7 V

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

g

C
C
C

Forward Transconductance

fs

Input Capacitance

ies

Output Capacitance 120 pF

oes

Reverse Transfer

res

Capacitance

Q
Q
Q

I

Total Gate Charge

g

Gate-Emitter Charge

ge

Gate-Collector Charge

gc

Latching Current V

CL

=15V,IC=12A

CE

V

=25V,f=1MHz,VGE=0

CE

= 480V, IC=12A,

V

CE

VGE= 15V

= 480 V , Tj = 150°C

clamp

=10Ω

R

G

10 S

920 pF

27 pF

68
10
30

48 A

nC
nC
nC

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

= 480 V, IC=12A

V

CC

R

=10Ω,VGE=15V

G

V

= 480 V, IC=12A

CC

=10Ω, VGE=15V,

R

G

Tj =125°C

5

46

800
290

2/9

t

d(on)

t

(di/dt)

Eon

Turn-on Delay Time
Rise Time

r

Turn-on Current Slope

on

Turn-on Switching Losses

ns
ns

A/µs

µJ

STGP12NB60HD

T

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

= 480 V, IC= 12A,

cc

=10Ω,VGE=15V

R

GE

V

= 480 V, IC=12A,

cc

RGE=10Ω,VGE=15V
Tj = 125 °C

=6A,Tj=125°C

I

f

=6A,VR=50V,

I

f

Tj = 125°C, di/dt = 100 A/µs

150 ns

230 ns

12
48

1.3

1.9

1.1
80

240

5.5

tr(V

td(

E

off

t

r(Voff

td(

E

off

t

c

off

off

t

f

(**)

E

ts

t

c

off

t

f

(**)

E

ts

Cross-over Time

)

Off Voltage Rise Time 27 ns

)

Delay Time 76 ns
Fall Time 92 ns
Turn-off Switching Loss 0.21
Total Switching Loss 0.49
Cross-over Time

)

Off Voltage Rise Time 76 ns

)

Delay Time 95 ns
Fall Time 200 ns
Turn-off Switching Loss 0.45
Total Switching Loss 0.74

COLLECTOR-EMITTER DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

f

I

fm

V

f

t

rr

Q

rr

I

rrm

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by max. junction temperature.

(**)Losses include Also the Tail (Jedec Standardization)

Forward Current
Forward Current pulsed

Forward On-Voltage If=6A

Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current

mJ
mJ

mJ
mJ

A
A

V
V

ns

nC

A

hermal Impedance

3/9

STGP12NB60HD

Output Characteristics

Transconductance

Transfer Characteristics

Collector-Emitter O n Voltage vs Temperatu re

Collector-Emitter On Voltage vs Co llettor Current

4/9

Gate Threshold vs Temperature

STGP12NB60HD

Normalized Breakdown V ol ta ge vs Temperature

Capacitance Variations

Total Switching Losses vs Gate ResistanceGate Charge vs Gate-Emitter Voltage

Total Switchi ng Losses vs Tem perature

Total Switching Losses vs Collector Current

5/9

STGP12NB60HD

Diode Forward VoltageSwitching Off Safe Operating Area

6/9

STGP12NB60HD

Fig. 2: Test Circuit For Inductive Load SwitchingFig. 1: Gate Charge test Circuit

7/9

STGP12NB60HD

TO-220 MECHANICAL DATA

DIM.

A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034

b1 1.15 1.70 0.045 0.066

c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106

e1 4.95 5.15 0.194 0.202

F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107

L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154

L20 16.40 0.645
L30 28.90 1.137

øP 3.75 3.85 0.147 0.151

Q 2.65 2.95 0.104 0.116

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

8/9

STGP12NB60HD

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of u se of such inf ormat ion nor for any in fring ement of p aten ts or othe r ri ghts of th ird p arties whic h may resul t f rom
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.

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