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STGP12NB60H
N-CHANNEL 12A - 600V TO-220
PowerMESH IGBT
PRELIMINARY DATA
■ HIGHINPUTIMPEDANCE
(VOLTAGEDRIVEN)
■ LOW ON-VOLTAGEDROP(V
CESAT
)
■ LOW GATE CHARGE
■ HIGHCURRENT CAPABILITY
■ VERYHIGH FREQUENCYOPERATION
■ OFFLOSSES INCLUDE TAIL CURRENT
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH IGBTs, with outstanding
perfomances. The suffix ”H” identifies a family
optimized to achieve very low switching times for
high frequency applications (<120kHz).
APPLICATIONS
■ HIGHFREQUENCYMOTORCONTROLS
■ SMPSAND PFC IN BOTH HARD SWITCH
AND RESONANTTOPOLOGIES
■ UPS
INTERNAL SCHEMATIC DIAGRAM
June 1999
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CES
Collect o r -Em i t t er Voltage (VGS= 0) 600 V
V
ECR
Emit t er-Coll ect or Voltage 20 V
V
GE
Gate-Emitter Voltage
±
20 V
I
C
Collect o r Current (continuous) at Tc=25oC24A
I
C
Collect o r Current (continuous) at Tc= 100oC12A
I
CM
(•) Collect o r Current (pulsed) 96 A
P
tot
Tot al Diss i pat ion at Tc=25oC 100 W
Derat ing Factor 0.8 W/
o
C
T
stg
Sto rage Temperature -65 to 150
o
C
T
j
Max. O perating Junction T emperature 150
o
C
(•) Pulse width limitedby safe operatingarea
TYPE V
CES
V
CE(sat)
I
C
ST G P12NB60H 600 V < 2. 8 V 12 A
1
2
3
TO-220
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THERMAL DATA
R
thj-case
R
thj-amb
R
thc-h
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambie nt Max
Ther mal Resistanc e Case-heatsink Typ
1.25
62.5
0.5
o
C/W
oC/W
o
C/W
ELECTRICAL CHARACTERISTICS
(T
j
=25oC unless otherwisespecified)
OFF
Sym bol Param e t er Test Condition s Min . Typ. Max. Unit
V
BR(CES)
Collector-Emitter
Break dow n V o lt age
IC=250µAVGE= 0 600 V
I
CES
Collect o r cut- off
(V
GE
=0)
V
CE
=MaxRating Tj=25oC
V
CE
=MaxRating Tj=125oC
10
100
µA
µ
A
I
GES
Gat e- Em i t t er Leak age
Current (V
CE
=0)
V
GE
= ± 20 V VCE=0 ±100 nA
ON(∗)
Sym bol Param e t er Test Condition s Min . Typ. Max. Unit
V
GE(th)
Gate Threshold
Voltage
VCE=VGEIC= 250 µA35V
V
CE(SAT)
Collector-Emitter
Sat urat ion Voltage
VGE=15V IC=12A
V
GE
=15V IC=12A Tj= 125oC
2.0
1.7
2.8 V
V
DYNAMIC
Sym bol Param e t er Test Condition s Min . Typ. Max. Unit
g
fs
Forward
Tr ansc on duc tance
VCE=25 V IC=12A 9.5 S
C
ies
C
oes
C
res
Input Capaci t anc e
Out put Capac it ance
Reverse Tr ansfer
Capacit a nc e
VCE=25V f=1MHz VGE= 0 950
120
27
pF
pF
pF
Q
G
Q
GE
Q
GC
Tot al Gate Charge
Gate-Emitt er Charge
Gat e- Col lect or C harge
VCE= 480 V IC=12A VGE=15V 68
10
30
nC
nC
nC
I
CL
Latc hing C urrent V
clamp
=480 RG=10 Ω
T
j
= 150oC
48 A
SWITCHINGON
Sym bol Param e t er Test Condition s Min . Typ. Max. Unit
t
d(on)
t
r
Delay T ime
Rise Tim e
VCC= 480 V IC=12A
V
GE
=15V RG=10Ω
5
46
ns
ns
(di/dt)
on
E
on
Tur n-on Current Slope
Turn-on
Switching Losses
VCC=480V IC=12A
R
G
=10Ω VGE=15V
T
j
=125oC
1000
290
A/µs
µ
J
STGP12NB60H
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ELECTRICAL CHARACTERISTICS
(continued)
SWITCHINGOFF
Sym bol Param e t er Test Condition s Min . Typ. Max. Unit
t
c
tr(v
off
)
t
d(off
)
t
f
E
off
(**)
E
ts
Cross-O ver Time
Off Voltage Rise Time
Delay T ime
Fall T ime
Turn-off Switching Loss
Tot al Switching Los s
VCC=480V IC=12A
R
GE
=10
Ω
VGE=15V
150
27
76
92
0.21
0.49
ns
ns
ns
ns
mJ
mJ
t
c
tr(v
off
)
t
d(off
)
t
f
E
off
(**)
E
ts
Cross-O ver Time
Off Voltage Rise Time
Delay T ime
Fall T ime
Turn-off Switching Loss
Tot al Switching Los s
VCC=480V IC=12A
R
GE
=10
Ω
VGE=15V
T
j
= 125oC
230
76
95
200
0.45
0.74
ns
ns
ns
ns
mJ
mJ
(•) Pulse width limited by max. junction temperature
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(**)Losses Include Also The Tail (Jedec Standardization)
ThermalImpedance
STGP12NB60H
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OutputCharacteristics
Transconductance
Collector-EmitterOn Voltage vs Collector Current
TransferCharacteristics
Collector-EmitterOn Voltage vs Temperature
Gate Threshold vs Temperature
STGP12NB60H
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NormalizedBreakdownVoltagevs Temperature
Gate Chargevs Gate-EmitterVoltage
TotalSwitching Losses vs Temperature
CapacitanceVariations
TotalSwitching Losses vs Gate Resistance
TotalSwitching Losses vs Collector Current
STGP12NB60H
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SwitchingOff Safe Operating Area
Fig. 1: Gate Chargetest Circuit Fig. 2: TestCircuit For InductiveLoad Switching
Fig. 3
: SwitchingWaveforms
STGP12NB60H
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DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
STGP12NB60H
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Information furnishedis believed tobe accurate and reliable.However, STMicroelectronics assumes no responsibilityfor the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specificationmentioned in this publication are
subjecttochange without notice.This publication supersedes andreplaces all information previouslysupplied.STMicroelectronics products
are not authorized for use as critical components in life support devices or systemswithout express written approval of STMicroelectronics.
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1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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STGP12NB60H
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