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STGP10NB60SDFP
N-CHANNEL 10A - 600V - TO-220FP
PowerMesh™ IGBT
TYPE V
CES
V
CE(sat)
I
C
STGP10NB60SDFP 600 < 1.8 V10A
■ HIGHT I NPUT IMPEDANCE (VOLTAGE
DRIVEN)
■ LOW ON-VOLTAGE DROP
■ HIGH CURRENT CAPABILITY
■ OFF LOSSES INCLUDE TAIL CURRENT
DESCRIPTION
Using the lates t high voltage technology based on a
patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH
™
IGBTs, with outstanding
performances. The suffix “S” identifies a f amily
optimized achieve minimum on-voltage drop for low
frequency applications (<1kHz).
APPLICATIONS
■ LIGHT DIMMER
■ STATIC RELAYS
■ MOTOR C ONTROL
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CES
V
ECR
V
GE
I
C
I
C
ICM()
P
TOT
V
ISO
T
stg
T
Collector-Emitter Voltage (VGS=0)
600 V
Reverse Battery Protection 20 V
Gate-Emitter Voltage ± 20 V
Collector Current (continuous) at TC=25°C
Collector Current (continuous) at TC=100°C
20 A
10 A
Collector Current (pulsed) 80 A
Total Dissipation at TC= 25°C
30 W
Derating Factor 0.2 W/°C
Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25°C) 2500 V
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 175 °C
j
(●) Pulsewidthlimited by safeoperatingarea
1/8November 2002
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STGP10NB60SDFP
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 5 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
Rthc-sink Thermal Resistance Case-sink Typ 0.5 °C/W
ELECTRICAL CHARACT E RISTICS (T
= 25 °C UNLESS OTHERWISE SPECIFIED)
CASE
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
BR(CES)
Collector-Emitter Break-down
IC= 250 µA, VGE= 0, 600 V
Voltage
V
BR(CES)
Emitter Collector Break-down
=1mA,VGE=0, 20 V
I
C
Voltage
I
CES
I
GES
Collector cut-off Current
=0)
(V
GE
Gate-Emitter Leakage
Current (V
CE
=0)
V
= Max Rating ,Tj=25 °C
CE
VCE= Max Rating ,Tj=125 °C
V
=±20V,VCE= 0 ± 100 nA
GE
100µAµA
10
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GE(th)
V
CE(SAT)
Gate Threshold Voltage VCE=VGE,IC= 250µA 2.5 5 V
Collector-Emitter Saturation
Voltage
VGE=15V, IC= 5 A, Tj= 25°C
V
=15V, IC= 10 A, Tj= 25°C
GE
VGE=15V, IC= 10 A, Tj= 125°C
1.15
1.35
1.25
1.8
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
g
fs
C
ies
C
oes
C
res
Q
g
I
CL
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Charge VCE= 400V, IC=10A,
Latching Current V
=25V,IC=10 A
CE
= 25V, f = 1 MHz, VGE=0
V
CE
VGE=15V
= 480V, RG= 1kΩ,
clamp
Tj= 125°C
5S
610
65
12
33 nC
20 A
V
V
V
pF
pF
pF
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STGP10NB60SDFP
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
t
(di/dt)
Eon
r
Turn-on Delay Time
Rise Time 0.46 µs
Turn-on Current Slope
on
Turn-on Switching Losses
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
tr(V
E
t
r(Voff
E
t
c
off
t
f
(**)
off
t
c
t
f
(**)
off
Cross-over Time
)
Off Voltage Rise Time 1.2 µs
Fall Time 1.2 µs
Turn-off Switching Loss 5.0 mJ
Cross-over Time
)
Off Voltage Rise Time 1.2 µs
Fall Time 1.9 µs
Turn-off Switching Loss 8.0 mJ
=480V,IC=10A
CC
RG=1KΩ,VGE=15V
VCC= 480 V,IC=10A
RG=1KΩ,VGE=15V
V
= 480 V,IC=10A,
clamp
RGE=1KΩ,VGE=15V
V
= 480 V,IC=10A,
clamp
R
=1KΩ,VGE=15V
GE
Tj = 125 °C
0.7 µs
8
0.6
2.2 µs
3.8 µs
A/µs
mJ
COLLECTOR-EMITTER DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
f
I
fm
V
f
t
rr
Q
rr
I
rrm
(●)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(1)Pulse width limited by max. junction temperature.
(**)Losses Include Also the Tail
Switching Off Safe Operating Area
Forward Current
Forward Current pulsed
Forward On-Voltage If= 3.5 A
If= 3.5 A, Tj = 125 °C
=7A,VR=35V,
Reverse Recovery Time
Reverse Recovery Charge
I
f
Tj =125°C, di/dt = 100A/µs
Reverse Recovery Current
Thermal Impedance
1.4
1.15
50
70
2.7
7
56
1.9
A
A
V
V
ns
nC
A
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STGP10NB60SDFP
Output Characteristics
Transconductance
Transfer Characteristics
Collector-Emitter On Voltage vs Temperature
Collector-Emitter On V oltage vs Collector Current
4/8
Gate Threshold Voltage vs Temperature
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STGP10NB60SDFP
Capacitance Variations
Off Losses vs Gate Resistance Off Los ses vs C ol lector Current
Gate Charge vs Gate-Emi tter Voltage
Normalized Break-down Voltage vs Temp.
Off Losses vs Temperature
5/8
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STGP10NB60SDFP
Emitter-Collector Di od e Characteristics
Fig. 2: Test Circuit For Inductive Load SwitchingFig. 1: Gate Charge test Circuit
6/8
Page 7
TO-220FP MECHANICAL DATA
STGP10NB60SDFP
DIM.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.5 0.045 0.067
F2 1.15 1.5 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
E
A
D
B
L3
L6
L7
¯
F1
F
G1
H
G
F2
123
L2
L5
L4
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STGP10NB60SDFP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility f or the
consequences of use of su ch in formation nor for any in fringement of patents or other rights of third parties w hich may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously suppli ed. STMi croelect ronics pr oducts are not author ized for use as cr itical component s in li fe suppo rt devi ces or
systems without express written approval of STMicroelectronics.
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© The ST logo is a registered trademark of STMicroelectronics
© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved
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