Page 1
STGP10N60L
N-CHANNEL 10A - 600V TO-220
LOGIC LEVEL IGBT
TYPE V
CES
V
CE(sat)
I
ST G P10N60L 600 V < 1.95 V 10 A
■ HIGHINPUT IMPEDANCE
(VOLTAGEDRIVEN)
■ VERYLOWON-VOLTAGEDROP(V
■ LOW THRESHOLD VOLTAGE
cesat
(LOGICLEVEL INPUT)
■ HIGHCURRENTCAPABILITY
■ OFFLOSSESINCLUDETAILCURRENT
APPLICATIONS
■ ELECTRONICIGNITION
■ LIGHT DIMMER
■ STATICRELAYS
C
)
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Value Unit
V
V
V
I
CM
P
T
(•) Pulsewidth limited by safeoperating area
June 1999
Collect o r -Em i t t er V oltage (VGS= 0) 600 V
CES
Reverse Bat tery Protec t io n 25 V
ECR
Gate-Emitter V oltage
GE
I
Collect o r Cur rent (con tinuous) at Tc=25oC25A
C
I
Collect o r Cur rent (con tinuous) at Tc= 100oC20A
C
15 V
±
(•) Collect o r Current (pul sed) 100 A
Tot al Dissipation at Tc=25oC 125 W
tot
Derat ing Fac tor 0.83 W/
Sto rage T emperature -65 to 17 5
stg
T
Max. Opera t ing Junc t ion Tem perature 175
j
o
C
o
C
o
C
1/8
Page 2
STGP10N60L
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambient Max
Ther mal Resistanc e Case-sink Ty p
1.2
62.5
0.1
o
C/W
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
= - 40 to 150oC unlessotherwise specified)
(T
j
OFF
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
V
BR(ces)
Collector-Emitter
IC=250µAVGE= 0 600 V
Break dow n Vo ltage
I
I
CES
GES
Collect o r c ut -off
=0)
(V
GE
Gat e- Em i t t er Leakage
Current (V
CE
=0)
V
=MaxRating Tj=25oC
CE
=MaxRating Tj=125oC
V
CE
V
= ± 15 V VCE=0 ±100 nA
GE
25
100
ON(∗)
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
V
GE(th)
V
CE(SAT)
I
Gate Th reshold
Voltage
Collector-Emitter
Sat urat ion Volt age
Collect o r Cur rent VGE=4.5V VCE=7V 15 45 A
C
VCE=VGEIC= 250 µA
V
CE=VGEIC
=250µATj=25oC
VGE=4.5V IC=8A Tj=-40oC
=4.5V IC=9.5A Tj=25oC
V
GE
=4.5V IC=8A Tj= 150oC
V
GE
0.6
1.0
1.5
1.4
1.25
2.4
2.0
2.0
DYNAMIC
µ
µA
V
V
V
V
V
A
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
g
Forward
fs
VCE=25 V IC=8A Tj=25oC7 12 S
Tr ansc on duc tance
C
ies
C
oes
C
res
Input C apac i t ance
Out put Capacit ance
Reverse T r ansfer
VCE=25V f=1MHz VGE= 0 1800
120
19
2600
165
26
Capacit a nc e
Q
Gat e Char ge VCE= 400 V IC=8A VGE=5V 30 nC
G
FUNCTIONALCHARACTERISTICS
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
2/8
I
CL
E
E
Latc hing Current V
For ward Clam p ing
CF
Energy
Revers e Avalanche
AR
= 480 V dV/dt = 200 V/µs
clamp
= 125oC
T
j
T
=55oCV
start
= 10 A L = 4.2 mH - Single Pulse
I
C
clamp
=480V
Energy
20 A
210 mJ
10 mJ
pF
pF
pF
Page 3
STGP10N60L
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHINGON
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
t
d(on)
(di/dt)
E
Delay Tim e
Rise T i me
t
r
Tur n-on Cur rent Slope
on
Turn-on
on
VCC= 480 V IC=8A
V
=5V RG=1K
GE
VCC=480V IC=8A
=1K
R
G
=125oC
T
j
Ω
VGE=5V
Ω
0.7
1.9
5
2.5
Switching Losses
SWITCHINGOFF
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
t
tr(v
E
off
t
tr(v
E
off
(•)Pulse width limited by safeoperating area
(∗) Pulsed: Pulse duration= 300µs, duty cycle 1.5%
(**)Losses Include AlsoThe Tail (Jedec Standardization)
Cross-Over T ime
c
Off Voltage Rise Time
)
off
Fall T ime
t
f
(**)
Turn-off Switching Loss
Cross-Over T ime
c
Off Voltage Rise Time
)
off
Fall T ime
t
f
(**)
Turn-off Switching Loss
V
=480V IC=8A
CC
=1KΩ VGE=5V
R
GE
T
=25oC
j
V
=480V IC=8A
CC
=1KΩ VGE=5V
R
GE
= 125oC
T
j
4
2.5
1.5
9.0
6
3.3
2.5
10.8
µs
s
µ
A/µs
mJ
s
µ
µs
s
µ
mJ
s
µ
µs
s
µ
mJ
SafeOperatingArea ThermalImpedance
3/8
Page 4
STGP10N60L
OutputCharacteristics
Transconductance
TransferCharacteristics
Collector-EmitterOnVoltagevs Temperature
Collector-EmitterOnVoltagevs Collector
Current
4/8
CapacitanceVariations
Page 5
STGP10N60L
Gate Chargevs Gate-EmitterVoltage
Gate Thresholdvs Temperature
LatchingCurrent vs Rg
OffLossesvs CollectorCurrent
OffLossesvs GateResistance
OffLossesvs Temperature
5/8
Page 6
STGP10N60L
SwitchingOff SafeOperatin Area
Fig. 1: Gate Charge test Circuit Fig. 2: SwitchingTimes Test CircuitFor
ResistiveLoad
Fig. 3:
6/8
Test Circuit For Inductive LoadSwitching
Page 7
TO-220 MECHANICAL DATA
STGP10N60L
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
E
A
L4
D
F2
F1
G1
H2
G
F
P011C
C
D1
L2
Dia.
L5
L7
L6
L9
7/8
Page 8
STGP10N60L
Information furnished is believedtobeaccurateand reliable.However, STMicroelectronics assumes no responsibilityfor the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specificationmentioned in this publicationare
subjecttochange without notice. This publication supersedes andreplaces all information previouslysupplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systemswithout express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
1999STMicroelectronics – Printedin Italy – All RightsReserved
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8/8
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