Datasheet STD16NE10 Datasheet (SGS Thomson Microelectronics)



STD16NE10

N - CHANNEL 100V - 0.07Ω - 16A - IPAK/DPAK

STripFET MOSFET

TYPE V

DSS

R

DS(on)

I

D

STD16 N E1 0 100 V < 0. 1 Ω 16 A

■ TYPICALR

■ EXCEPTIONALdv/dt CAPABILITY

■ AVALANCHERUGGEDTECHNOLOGY

■ 100% AVALANCHETESTED

■ APPLICATIONORIENTED

DS(on)

=0.07 Ω

CHARACTERIZATION

■ THROUG-HOLEIPAK (TO-251) POWER

PACKAGEIN TUBE(SUFFIX ”-1”)

■ SURFACE-MOUNTING DPAK (TO-252)

POWERPACKAGEIN TAPE& REEL
(SUFFIX”T4”)

DESCRIPTION

This Power MOSFET is the latest development of
SGS-THOMSON unique ”Single Feature Size”
strip-based process.The resulting transistor
shows extremely high packing density for low on­resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark­able manufacturingreproducibility.

APPLICATIONS

■ DC MOTOR CONTROL (DISK DRIVERS,etc.)

■ DC-DC& DC-ACCONVERTERS

■ SYNCHRONOUSRECTIFICATION

3

2

IPAK

TO-251

(Suffix”-1”)

1

(Suffix ”T4”)

1

DPAK

TO-252

INTERNAL SCHEMATIC DIAGRAM

3

ABSOLUTE MAXIMUM RATINGS

Symb o l Para meter Value Uni t

V

V

V

I

DM

P

dv/ dt (

T

(•) Pulse width limitedby safe operating area (1)ISD≤ 16 A,di/dt ≤ 200 A/µs, VDD≤ V

July 1998

Drain-source Volt age (VGS=0) 100 V

DS

DGR Drain- gate Voltage (R

Gat e- sourc e V o lt age ± 20 V

GS

I

Drain C ur rent (con t in uous) at Tc=25oC16A

D

I

Drain C ur rent (con t in uous) at Tc=100oC11A

D

=20kΩ)

GS

100 V

(•) Dra in Current (puls ed ) 64 A

Tot al Dis sipati on at Tc=25oC50W

tot

Derating Factor 0.33 W/

1) Peak Diode Recovery v o lt age sl ope 7 V/ns

Sto rage Tem pe r ature -65 to 17 5

stg

T

Max. O perating Ju nc tion Tem peratu r e 175

j

(BR)DSS,Tj≤TJMAX

o

C

o

C

o

C

1/9

STD16NE10

THERMAL DATA

R

thj-case

Rthj- a mb

R

thc-sin k

T

AVALANCHE CHARACTERISTICS

Symbol Para met e r Max Valu e Uni t

I

AR

E

Ther mal Resist ance Junction-ca s e Max
Ther mal Resist ance Junction-am bient Max
Ther mal Resist ance Case-si nk T yp
Maximum Lead Tempera t ure F o r S oldering Pur p ose

l

Avalanch e Curre nt , R epetit i v e o r Not- Re petit ive
(pulse w idth limited b y T

Single Pulse Avalanche Energy

AS

(starting T

=25oC, ID=IAR,VDD=30V)

j

max, δ <1%)

j

3.0

100

1.5

275

16 A

75 mJ

o

C/W

oC/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

=25oC unlessotherwisespecified)

case

OFF

Symbol Parameter Test C ondition s Min. Typ. Max. Unit

V

(BR)DSS

Drain-sou rc e

=250µAVGS=0

I

D

100 V

Breakdown Voltage

I

DSS

I

GSS

Zer o G at e Voltage
Drain Cur rent (V

GS

Gat e-body Le ak a ge
Current (V

DS

=0)

=0)

=MaxRating

V

DS

V

=MaxRating Tc=125

DS

o

C

= ± 20 V

V

GS

1

10

± 100 nA

ON (∗)

Symbol Parameter Test C ondition s Min. Typ. Max. Unit

V

GS(th )

Gate Threshold

V

DS=VGSID

=250µA

234V

Voltage

R

DS(on)

Stati c Drain-so urce O n

VGS=10V ID=8A 0.07 0.1 Ω

Resistance

I

D(on)

On S tate D rain Cur rent VDS>I

D(on)xRDS(on)max

16 A

VGS=10V

DYNAMIC

Symbol Parameter Test C ondition s Min. Typ. Max. Unit

g

(∗)Forward

fs

Tr anscond uctance

C

C

C

Input Ca pac i t an c e

iss

Out put C apacitanc e

oss

Reverse T ransfer

rss

Capa cit an c e

VDS>I

D(on)xRDS(on)maxID

=8 A 5 S

VDS=25V f=1MHz VGS= 0 1600

180

50

2100

250

70

µA
µA

pF
pF
pF

2/9

STD16NE10

ELECTRICAL CHARACTERISTICS (continued)

SWITCHINGON

Symbol Parameter Test C ondition s Min. Typ. Max. Unit

t

d(on)

Turn-on Tim e

r

Rise T ime

t

VDD=50V ID=10A

=4.7 Ω VGS=10V

R

G

17
37

(see test circuit, figure 3)

Q

Q

Q

Total Gate Charge

g

Gat e-Sou r ce Charge

gs

Gate-Drain Charge

gd

VDD=80V ID=20A VGS=10V 38

10
12

SWITCHINGOFF

Symbol Parameter Test C ondition s Min. Typ. Max. Unit

t

r(Voff)

t

t

Of f - voltag e Ris e Tim e
Fall Time

f

Cross-over T ime

c

VDD=80V ID=20A

=4.7 Ω VGS=10V

R

G

(see test circuit, figure 5)

11
18
32

SOURCE DRAIN DIODE

Symbol Parameter Test C ondition s Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

(∗) Pulsed: Pulse duration =300 µs, duty cycle1.5 %
(•) Pulse width limited by safe operating area

Source-drain Cu rrent

(•)

Source-drain Cu rrent
(pulsed)

(∗) For ward On V o lt age ISD=16A VGS=0 1.5 V

Reverse R ec ov er y

rr

Time
Reverse R ec ov er y

rr

= 20 A di/dt = 100 A /µs

I

SD

=50V Tj=150oC

V

DD

(see test circuit, figure 5)

110

440
Charge
Reverse R ec ov er y

8

Current

23
50

50 nC

15
25
44

16
64

ns
ns

nC
nC

ns
ns
ns

A
A

ns

µC

A

Safe Operating Area ThermalImpedance

3/9

STD16NE10

OutputCharacteristics

Transconductance

TransferCharacteristics

StaticDrain-sourceOn Resistance

GateCharge vs Gate-sourceVoltage

4/9

CapacitanceVariations

STD16NE10

Normalized GateThresholdVoltage vs
Temperature

Source-drainDiode Forward Characteristics

Normalized On Resistancevs Temperature

5/9

STD16NE10

Fig. 1: Unclamped InductiveLoad Test Circuit

Fig. 3: SwitchingTimes Test CircuitsFor

ResistiveLoad

Fig. 2: Unclamped Inductive Waveform

Fig. 4: Gate Chargetest Circuit

Fig. 5: Test Circuit For InductiveLoad Switching

And Diode RecoveryTimes

6/9

TO-251 (IPAK) MECHANICAL DATA

STD16NE10

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051

B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037

C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181

H 15.9 16.3 0.626 0.641

L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039

A

E

==

C2

L2

B2

==

H

C

A3

A1

B6

L

B

B5

G

==

D

B3

2

13

L1

0068771-E

7/9

STD16NE10

TO-252 (DPAK) MECHANICALDATA

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A2 0.03 0.23 0.001 0.009

B 0.64 0.9 0.025 0.035
B2 5.2 5.4 0.204 0.212

C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181

H 9.35 10.1 0.368 0.397
L2 0.8 0.031
L4 0.6 1 0.023 0.039

8/9

H

A

E

==

C2

L2

B2

==

DETAIL”A”

D

2

13

L4

A1

C

A2

DETAIL”A”

B

G

==

0068772-B

STD16NE10

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