Datasheet STD16NE06L Datasheet (SGS Thomson Microelectronics)

®

N - CHANNEL 60V - 0.07 Ω - 16A - DPAK

STripFET " POWER MOSFET

TYPE V

DSS

STD16NE06L 60 V < 0.085 Ω 16 A

■ TYPICAL R

■ EXCEPT ION AL dv/dt CAP AB ILI T Y

■ 100% AVALANCHE TESTED

■ LOW GATE CHARGE 100

■ APPLI CATION ORIENTED

DS(on)

= 0.07 Ω

CHARACTERIZATION

■ FOR TAPE & REEL AND OTHER

PACKAGING OPTIONS CONTACT SAL ES
OFFICES

DESCRIPTION

This Power Mosfet is the latest development of
SGS-THOMSON unique "Single Feature Size"
strip-based process. The resulting transistor
shows extremely high packing density for low on­resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark­able manufacturing reproducibility.

o

R

C

DS(on)

I

D

STD16NE06L

PRELIMINARY DATA

3

1

DPAK

TO-252

(Suffix "T4")

INTER NAL SCH E M ATI C DIAG RA M

APPLICATIONS

■ HIGH CURRENT, HIGH SPE ED SWI TCHING

■ SOLENOID AND RELAY DRIVER S

■ MOTOR CONT RO L, AUDIO AM PLIFI ER S

■ DC-DC & DC-AC CONVERT E RS

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

V

V

I

DM

P

dv/dt Peak Diode Recovery voltage slope 7 V/ns

T

(•) Pulse width limited by safe operating area (1) ISD ≤16 A, di/dt ≤ 300 A/µs, VDD ≤ V

June 1998

Drain-source Voltage (VGS = 0) 60 V

DS

Drain- gate Voltage (RGS = 20 kΩ)

DGR

Gate-source Voltage ± 20 V

GS

I

Drain Current (continuous) at Tc = 25 oC16A

D

I

Drain Current (continuous) at Tc = 100 oC11A

D

60 V

(•) Drain Current (pulsed) 64 A

Total Dissipation at Tc = 25 oC40W

tot

Derating Factor 0.3 W/oC

Storage Temperature -65 to 175

stg

T

Max. Operating Junction Temperature 175

j

, Tj ≤ T

(BR)DSS

JMAX

o

C

o

C

1/5

STD16NE06L

THERMAL DATA

R

thj-case

Rthj-amb

R

thc-si n k

T

Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose

l

AVALANCHE CHARACTERI S TICS

Symbol Parameter Max Value Unit

I

AR

E

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

Single Pulse Avalanche Energy

AS

(starting T

= 25 oC, ID = IAR, V

j

ma x)

j

DD

= 35 V)

3.75
100

1.5

275

16 A

60 mJ

o

C/W

oC/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

= 25 oC unless otherwise specified)

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

I

= 250 µA V

D

GS

= 0

60 V

Breakdown Voltage

I

DSS

I

GSS

Zero Gate Voltage
Drain Current (V

GS

Gate-body Leakage
Current (V

DS

= 0)

= 0)

= Max Rating

V

DS

V

= Max Rating Tc =125 oC

DS

V

= ± 20 V

GS

1

10

± 100 nA

ON (∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

Gate Threshold

V

= VGS ID = 250 µA

DS

1 1.7 2.5 V

Voltage

R

DS(on)

I

D(on)

Static Drain-source On
Resistance

VGS = 10V ID = 8 A
V

= 5V ID = 8 A

GS

On State Drain Current VDS > I

V

= 10 V

GS

D(on)

x R

DS(on)max

0.07

0.06

16 A

0.085

0.07

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

gfs (∗) Forward

Transconductance

C

C

C

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer

rss

Capacitance

VDS > I

V

DS

x R

D(on)

DS(on)max

= 25 V f = 1 MHz V

ID =8 A 5 9 S

50

1100

170

70

= 0 800

GS

125

µA
µA

Ω
Ω

pF
pF
pF

2/5

STD16NE06L

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING O N

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

t

r

Turn-on Time
Rise Time

V

= 30 V ID = 10 A

DD

RG =4.7 Ω VGS = 5 V

20
45

30
60

ns
ns

Q
Q
Q

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain Charge

gd

V

= 48 V ID = 20 A V

DD

= 5 V 14

GS

8
4

20 nC

SWITCHING O F F

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t

t

Off-voltage Rise Time
Fall Time

f

Cross-over Time

c

V

= 48 V ID = 20 A

DD

=4.7 Ω VGS = 5 V

R

G

10
25
42

14
34
60

SOURCE DRAIN DIO DE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

20
80

I

SDM

I

SD

Source-drain Current

(•)

Source-drain Current
(pulsed)

V

(∗) Forward On Voltage ISD = 16 A VGS = 0 1.5 V

SD

t

Q

Reverse Recovery

rr

Time
Reverse Recovery

rr

I

= 20 A di/dt = 100 A/µs

SD

V

= 30 V Tj = 150 oC

DD

65

130

Charge

I

RRM

Reverse Recovery

4

Current

(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area

nC
nC

ns
ns
ns

A
A

ns

µC

A

3/5

STD16NE06L

TO-252 (DPAK) MECHANICAL DATA

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A2 0.03 0.23 0.001 0.009

B 0.64 0.9 0.025 0.035
B2 5.2 5.4 0.204 0.212

C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181

H 9.35 10.1 0.368 0.397
L2 0.8 0.031
L4 0.6 1 0.023 0.039

4/5

A

C2

L2

E

B2

==

H

DETAIL "A"

D

==

C

B

2

1 3

L4

A1

G

==

A2

DETAIL "A"

0068772-B

STD16NE06L

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