Datasheet STD12NE06 Datasheet (SGS Thomson Microelectronics)



STD12NE06

N - CHANNEL 60V - 0.08Ω - 12A - IPAK/DPAK

SINGLE FEATURE SIZE POWER MOSFET

TYPE V

DSS

R

DS(on)

I

D

ST D12N E 06 60 V < 0 . 10 Ω 12 A

■ TYPICALR

■ EXCEPTIONALdv/dtCAPABILITY

■ AVALANCHERUGGEDTECHNOLOGY

■ 100 % AVALANCHETESTED

■ APPLICATIONORIENTED

DS(on)

= 0.08 Ω

CHARACTERIZATION

■ ADDSUFFIX ”T4” FORORDERING IN TAPE

& REEL

DESCRIPTION

This Power MOSFET is the latest developmentof
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting transi-
stor shows extremelyhigh packing density forlow
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re­markablemanufacturingreproducibility.

APPLICATIONS

■ DC MOTOR CONTROL(DISK DRIVES,etc.)

■ DC-DC& DC-AC CONVERTERS

■ SYNCHRONOUSRECTIFICATION

3

2

IPAK

TO-251

(Suffix”-1”)

1

(Suffix”T4”)

1

DPAK

TO-252

INTERNAL SCHEMATIC DIAGRAM

3

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Uni t

V

V

V

I

DM

P

dv/ dt (

T

(•) Pulse width limited by safe operating area (1)ISD≤ 12 A, di/dt ≤ 200 A/µs,VDD≤ V

March 1999

Drain-source Voltage (VGS=0) 60 V

DS

Drain- g at e Voltage (RGS=20kΩ)60V

DGR

Gate-source Voltage ± 20 V

GS

I

Drain Cur rent (c ont in uous ) at Tc=25oC12A

D

I

Drain Cur rent (c ont in uous ) at Tc=100oC8A

D

(•) Drain Current (pulsed) 48 A

Total Dissipation at Tc=25oC35W

tot

Derat ing F ac tor 0.23 W/

1 ) Peak Diode Recover y voltage s lope 6 V/ ns

Sto rage Temperat ure -65 to 175

stg

T

Max. Operating Junct ion Tempe r at ure 175

j

(BR)DSS,Tj≤TJMAX

o
o

o

C

C
C

1/10

STD12NE06

THERMAL DATA

R

thj-case

R

thj-amb

R

thc-sink

T

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Valu e Unit

I

AR

E

Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambient Max
Ther mal Resistanc e Case-sink Ty p
Maximum Lead Temperatu re For Soldering Purpos e

l

Avalanche C urrent, Repetitive or Not-Repetitive
(pulse width limited by T

Single Pul se Avalanc he Ener gy

AS

(starting T

=25oC, ID=IAR,VDD=25V)

j

max)

j

4.3

100

1.5

275

12 A

45 mJ

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS

=25oC unless otherwisespecified)

(T

case

OFF

Symbol Parameter Test Condit ions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

ID=250µAVGS=0 60 V

Break dow n Vo lt age

I

DSS

I

GSS

Zero Gate Voltage
Drain Curre nt (V

GS

Gat e- bod y Leakag e
Current (V

DS

=0)

=0)

V

=MaxRating

DS

=MaxRating Tc= 100oC

V

DS

V

=± 20 V

GS

1

10

100 nA

±

ON(∗)

Symbol Parameter Test Condit ions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage VDS=VGSID= 250 µA 234V
Sta t ic Drain-s our c e On

VGS=10V ID= 6 A 0.08 0.10

Resistance

I

D(on)

On State Drain Current VDS>I

D(on)xRDS(on )max

12 A

VGS=10V

DYNAMIC

Symbol Parameter Test Condit ions Min. Typ. Max. Unit

g

(∗)Forward

fs

Tr ansc on duc tance

C

C

C

Input Capaci t ance

iss

Out put Capac itance

oss

Reverse Transfer

rss

Capacit a nc e

VDS>I

D(on)xRDS(on )maxID

=6 A 6 S

VDS=25V f=1MHz VGS= 0 760

100

30

1000

140

45

µ
µA

Ω

pF
pF
pF

A

2/10

STD12NE06

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHINGON

Symbol Parameter Test Condit ions Min. Typ. Max. Unit

t

d(on)

t

r

Turn-on Time
Rise Time

VDD=30V ID=6A
R

=4.7

G

Ω

VGS=10V

10
35

15
50

(see test circuit, figure 3)

Q
Q
Q

Tot al Gate Charge

g

Gat e- Source Charge

gs

Gate-Drain Charge

gd

VDD=40V ID=12A VGS=10V 20

5
7

30 nC

SWITCHINGOFF

Symbol Parameter Test Condit ions Min. Typ. Max. Unit

t

r(Voff)

t

t

Off-volt age Rise Time
Fall T ime

f

Cross-over Tim e

c

VDD=48V ID=12A

=4.7 Ω VGS=10V

R

G

(see test circuit, figure 5)

18
30

7

10
25
45

SOURCEDRAINDIODE

Symbol Parameter Test Condit ions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

(∗) Pulsed: Pulse duration = 300µs, duty cycle 1.5%
(•) Pulse width limited by safe operating area

Source-drain Current

(•)

Source-drain Current

12
48

(pulsed)

(∗)ForwardOnVoltage ISD=12A VGS=0 1.5 V

Reverse Recovery

rr

Time
Reverse Recovery

rr

ISD= 12 A di/ dt = 100 A/µs

=30V Tj= 150oC

V

DD

(see test circuit, figure 5)

70

0.21
Charge
Reverse Recovery

6

Current

ns
ns

nC
nC

ns
ns
ns

A
A

ns

µ

A

C

SafeOperating Area ThermalImpedance

3/10

STD12NE06

DeratingCurve

TransferCharacteristics

OutputCharacteristics

Transconductance

Static Drain-sourceOn Resistance

4/10

Gate Charge vs Gate-sourceVoltage

STD12NE06

CapacitanceVariations

NormalizedOn Resistancevs Temperature

NormalizedGate ThresholdVoltage vs
Temperature

Turn-onCurrent Slope

Turn-offDrain-source VoltageSlope

Cross-overTime

5/10

STD12NE06

SwitchingSafe Operating Area

Source-drainDiode ForwardCharacteristics

AccidentalOverload Area

Fig. 1:

6/10

UnclampedInductiveLoad TestCircuit

Fig. 2:

UnclampedInductiveWaveform

STD12NE06

Fig. 3:

SwitchingTimes Test Circuits For

ResistiveLoad

Fig. 5: Test CircuitFor Inductive Load Switching
AndDIode RecoveryTimes

Fig. 4:

GateCharge test Circuit

7/10

STD12NE06

TO-251 (IPAK) MECHANICAL DATA

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051

B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037

C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181

H 15.9 16.3 0.626 0.641

L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039

8/10

A

E

==

C2

L2

B2

==

H

C

A3

A1

B6

L

B

B5

G

==

D

B3

2

13

L1

0068771-E

TO-252 (DPAK) MECHANICAL DATA

STD12NE06

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A2 0.03 0.23 0.001 0.009

B 0.64 0.9 0.025 0.035
B2 5.2 5.4 0.204 0.212

C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181

H 9.35 10.1 0.368 0.397
L2 0.8 0.031
L4 0.6 1 0.023 0.039

H

A

E

==

C2

L2

B2

==

DETAIL”A”

D

2

13

L4

A1

C

A2

DETAIL”A”

B

G

==

0068772-B

9/10

STD12NE06

Information furnishedis believedtobeaccurateand reliable.However, STMicroelectronics assumes no responsibilityfor the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under anypatent or patent rights ofSTMicroelectronics. Specificationmentioned in this publicationare
subjecttochange withoutnotice.This publication supersedes andreplaces all informationpreviously supplied.STMicroelectronics products
are not authorized for use as critical components in lifesupportdevices or systems without express written approval of STMicroelectronics.

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 1999 STMicroelectronics – Printed in Italy – All Rights Reserved

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