Datasheet STD12N10L Datasheet (SGS Thomson Microelectronics)



STD12N10L

N - CHANNEL 100V - 0.12 Ω - 12A TO-252

LOW THRESHOLD POWER MOS TRANSISTOR

TYPE V

DSS

R

DS(o n)

I

D

ST D12N 10L 100 V < 0.15 Ω 12 A

■ TYPICALR

■ AVALANCHERUGGEDTECHNOLOGY

■ 100%AVALANCHETESTED

■ HIGHCURRENT CAPABILITY

■ 175

■ LOW THRESHOLDDRIVE

■ FORTHROUGH-HOLE VERSION CONTACT

o

C OPERATINGTEMPERATURE

DS(on)

= 0.12 Ω

SALESOFFICE

APPLICATIONS

■ HIGHCURRENT, HIGH SPEEDSWITCHING

■ SOLENOIDAND RELAYDRIVERS

■ MOTORCONTROL, AUDIOAMPLIFIERS

■ DC-DC& DC-AC CONVERTERS

■ AUTOMOTIVE ENVIRONMENT(INJECTION,

ABS, AIR-BG, LAMPDRIVERS,Etc.)

3

1

DPAK

TO-252

(Suffix ”T4”)

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Uni t

V

V

V

I

DM

P

T

(•) Pulse width limited by safe operating area

November 1999

Drain-source Voltage (VGS= 0) 100 V

DS

Drain- g at e Voltage (RGS=20kΩ) 100 V

DGR

Gate-source Voltage

GS

I

Drain Cur rent (c ont in uous ) at Tc=25oC12A

D

I

Drain Cur rent (c ont in uous ) at Tc=100oC8A

D

15 V

±

(•) Drain Current (pulsed) 48 A

Total Dissipation at Tc=25oC50W

tot

Derat ing F ac tor 0.33 W/
Sto rage Temperat ure -65 to 175

stg

T

Max. Operating Junction Tem pe r at ur e 175

j

o

C

o

C

o

C

1/9

STD12N10L

THERMAL DATA

R

thj-case

R

thj-amb

R

thc-sink

T

Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambient Max
Ther mal Resistanc e Case-sink Ty p
Maximum Lead Te m perature For Soldering Purpos e

l

3

100

1.5

275

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS

=25oC unless otherwisespecified)

(T

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

ID=250µAVGS= 0 100 V

Break dow n Vo lt age

I

DSS

I

GSS

Zero Gate Voltage
Drain Curre nt (V

GS

Gat e- bod y Leakag e
Current (V

DS

=0)

=0)

V

=MaxRating

DS

=MaxRating Tc= 125oC

V

DS

V

= ± 15 V ± 100 nA

GS

1

10

ON(∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

I

D(on)

Gate Threshold Voltage VDS=VGSID= 250 µA11.62.5V
Sta t ic Drain-s our c e On

Resistance

VGS=10V ID=6A

=5V ID=6A

V

GS

On State Drain Current VDS>I

D(on)xRDS(on )max

0.12

0.17

12 A

0.15

0.2

VGS=10V

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

(∗)Forward

fs

Tr ansc on duc tance

C

C

C

Input Capaci t ance

iss

Out put Capac itance

oss

Reverse Transfer

rss

Capacit a nc e

VDS>I

D(on)xRDS(on )maxID

=6A 6.5 10 S

VDS=25V f=1MHz VGS= 0 800

150

50

µ
µA

Ω
Ω

pF
pF
pF

A

2/9

STD12N10L

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHINGON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

Tur n-on Delay T ime
Rise Time

t

r

VDD=50V ID=6A
R

=4.7

G

Ω

VGS=5V

15
40

(Resis t iv e Load, see fig. 3)

Q
Q
Q

Tot al Gate C har ge

g

Gat e- Source Charge

gs

Gate-Drain Charge

gd

VDD=80V ID=12A VGS=5V 20

6

10

30 nC

SWITCHINGOFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t

t

Off-volt age Rise Time
Fall T ime

f

Cross-over Tim e

c

VDD=80V ID=12A

=4.7 Ω VGS=5V

R

G

(Indu ct iv e Load, see fig. 5)

12
12
25

SOURCEDRAINDIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

V

I

SDM

SD

Q

I

RRM

SD

t

Source-drain Current

(•)

Source-drain Current

12
48

(pulsed)

(∗)ForwardOnVoltage ISD=12A VGS=0 1.5 V

Reverse Recovery

rr

Time
Reverse Recovery

rr

ISD= 12 A di/dt = 100 A/µs

=30V Tj=150oC

V

DD

(see test circuit, fig. 5)

145

580
Charge
Reverse Recovery

8

Current

ns
ns

nC
nC

ns
ns
ns

A
A

ns

µ

A

C

(∗) Pulsed:Pulse duration = 300µs, duty cycle 1.5%
(•) Pulse width limited by safe operating area

3/9

STD12N10L

Fig. 1:

UnclampedInductiveLoad TestCircuit

Fig. 3: SwitchingTimes Test Circuits For
ResistiveLoad

Fig. 2:

UnclampedInductiveWaveform

Fig. 4: Gate Chargetest Circuit

Fig. 5:

Test Circuit For InductiveLoad Switching

And Diode Recovery Times

4/9

TO-252 (DPAK) MECHANICAL DATA

STD12N10L

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A2 0.03 0.23 0.001 0.009

B 0.64 0.9 0.025 0.035
B2 5.2 5.4 0.204 0.212

C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181

H 9.35 10.1 0.368 0.397
L2 0.8 0.031
L4 0.6 1 0.023 0.039

H

A

E

C2

L2

B2

==

==

DETAIL”A”

D

2

13

L4

A1

C

A2

DETAIL”A”

B

G

==

0068772-B

5/9

STD12N10L

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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
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6/9

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