Datasheet STB90NF03L Datasheet (SGS Thomson Microelectronics)

STB90NF03L

N-CHANNEL 30V - 0.0056Ω - 90A D2PAK

LOW GATE CHARGE STripFET™ POWER MOSFET

TYPE V

STB90NF03L 30 V < 0.0065 Ω 90 A

■ TYPICAL R

■ TYPICAL Q

■ OPTIMAL R

■ CONDUCTION LOSSES REDUCED

■ SWITCHING LOSSES REDUCED

DS
g

DS

DSS

(on) = 0.0056 Ω

= 35 nC @ 5V

(on) x Qg TRADE-OFF

R

DS(on)

I

D

DESCRIPTION

This application specific Power Mosfet is the third

generation of STMicroelectronics unique “Single
Feature Size

™” strip-based process. The resulting

transistor shows the best trade-off between on-re­sistance and gate charge. When used a s high and
low side in buck regulators , it gives the best perfor­mance in terms of both conduction and switching
losses. This is extremely important for mother­boards where fast switching and high e fficiency are
of paramount importance.

APPLICATIONS

■ SPECIFICALLY DESIGNED AND OPTIMISED

FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS

3

1

D2PAK

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

DS

V

DGR

V

GS

I

D

I

D

I

DM

P

TOT

T

stg

T

j

(●) Pulse width limited by safe operating area

Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage ± 18 V

Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C

(●)

Drain Current (pulsed) 360 A
Total Dissipation at TC = 25°C
Derating Factor 0.73 W/°C
Storage Temperature
Max. Operating Junction Temperature

30 V
30 V

90 A
65 A

150 W

– 55 to 175 °C

1/8October 2001

STB90NF03L

THERMA L D ATA

Rthj-case Thermal Resistance Junction-case Max 1 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W

T

l

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

ON

(1)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Maximum Lead Temperature For Soldering Purpose 300 °C

Drain-source

ID = 250 µA, VGS = 0 30 V

Breakdown Voltage
Zero Gate Voltage

Drain Current (V

GS

= 0)

Gate-body Leakage
Current (V

DS

= 0)

Gate Threshold Voltage
Static Drain-source On

Resistance

V

= Max Rating

DS

V

= Max Rating, TC = 125 °C

DS

V

= ± 18 V ±100 nA

GS

V

= VGS, ID = 250µA

DS

VGS = 10V, ID = 45 A
VGS = 5V, ID = 45 A

1V

0.0056 0.0065 Ω

0.007 0.012 Ω

1µA

10 µA

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS > I

g

fs

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance 860 pF
Reverse Transfer

Capacitance

ID= 45 A

V

DS

D(on)

x R

DS(on)max,

= 25V, f = 1 MHz, VGS = 0

40 S

2700 pF

170 pF

2/8

STB90NF03L

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

t

d(on)

Q
Q
Q

t

r

g
gs
gd

Turn-on Delay Time
Rise Time 200 ns
Total Gate Charge VDD = 24V, ID =90A,VGS = 5V 35

Gate-Source Charge 10 nC
Gate-Drain Charge 18 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

t

f

Turn-off-Delay Time VDD = 15V, ID = 45 A,

Fall Time 105 ns

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD (2)

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pu l se duration = 300 µs, duty cycle 1. 5 %.

2. Pulse width li mited by safe operating area .

Source-drain Current 90 A

(1)

Source-drain Current (pulsed) 360 A
Forward On Voltage
Reverse Recovery Time ISD = 90 A, di/dt = 100A/µs,

Reverse Recovery Charge 90 nC
Reverse Recovery Current 2.5 A

= 15V, ID = 45 A

DD

R

= 4.7Ω VGS = 4.5 V

G

(see test circuit, Figure 3)

RG=4.7Ω, V

GS

= 4.5 V

(see test circuit, Figure 3)

ISD = 90 A, VGS = 0

VDD = 15V, Tj = 150°C
(see test circuit, Figure 5)

30 ns

47

50 ns

1.3 V

80 ns

nC

Ther m al Impe d enceSafe Operating Area

3/8

STB90NF03L

Output Characteristics Transfer Characteristics

Transconductance Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage Capacitance Variations

4/8

Source-drain Diode Forward Characteristics

STB90NF03L

Normalized On Resistance vs TemperatureNormalized Gate Thereshold Voltage vs Temp.

5/8

STB90NF03L

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

6/8

TO-263 (D2PAK) MECHANICAL DATA

STB90NF03L

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

A1 2.49 2.69 0.098 0.106

B 0.7 0.93 0.027 0.036

B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.21 1.36 0.047 0.053

D 8.95 9.35 0.352 0.368
E 10 10.4 0.393 0.409
G 4.88 5.28 0.192 0.208

L 15 15.85 0.590 0.624
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068

mm inch

D

A

C2

DETAIL "A"

C

A2

DETAIL "A"

A1

B2

E

L2

L

L3

B

G

P011P6/E

7/8

STB90NF03L

8/8

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