Datasheet STP8NC50FP, STB8NC50-1 Datasheet (SGS Thomson Microelectronics)

STP8NC50 - STP8NC50FP

STB8NC50-1

N-CHANNEL 500V - 0.7Ω - 8A TO-220/TO-220FP/I2PAK

PowerMesh™II MOSFET

TYPE V

DSS

STP(B)8NC50(-1) 500 V < 0.85
STP8NC50FP 500 V < 0.85

■ TYPICAL R

■ EXTREMELY HIGH dv /d t CAPABILITY

■ 100% AVALANCHE TESTED

■ NEW HIGH VOLTAGE BENCHMARK

■ GATE CHARGE MINIMIZED

(on) = 0.7 Ω

DS

R

DS(on)

I

D

Ω
Ω

8 A
8 A

DESCRIPTION

The PowerMESH
generation of MESH OVERLAY

™II is the evolution of the first

™. The layout re-

finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lea d­ing edge for what concerns swithing speed, gate
charge and ruggedness.

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SWITH MODE POWER SUPPLI ES ( SMPS)

■ DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVES

TO-220 TO-220FP

1

3

2

1

I²PAK

INTERNAL SCHEMATIC DIAGRAM

3

2

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STP(B)8NC50(-1) STP8NC50FP

V

DS

V

DGR

V

GS

I

D

I

D

I

DM

P

TOT

dv/dt (1) Peak Diode Recovery voltage slope 3 V/ns

V

ISO

T

stg

T

j

(•)Pu l se width limite d by safe operat i ng area
(*) Limited only by maximum temperature allowed

Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)

500 V
500 V

Gate- source Voltage ±30 V

Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C

(●)

Drain Current (pulsed) 32 32(*) A
Total Dissipation at TC = 25°C

8 8(*) A

5.4 5.4(*) A

135 40 W

Derating Factor 1.075 0.32 W/°C

Insulation Withstand Voltage (DC) - 2000 V
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C

(1)ISD ≤8A, di/dt ≤100A/µs, VDD ≤ V

(BR)DSS

, Tj ≤ T

JMAX.

1/10December 2000

STP8NC50/FP/STB8NC50-1

THERMA L D ATA

TO-220/I2PAK TO-220FP

Rthj-case Thermal Resistance Junction-case Max 0.93 3.12 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W

Rthc-sink Thermal Resistance Case-sink Typ 0.5 °C/W

T

l

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

AS

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

Maximum Lead Temperature For Soldering Purpose 300 °C

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

max)

j

Single Pulse Avalanche Energy
(starting T

Drain-source
Breakdown Voltage

Zero Gate Voltage
Drain Current (V

Gate-body Leakage
Current (V

= 25 °C, ID = IAR, VDD = 50 V)

j

= 250 µA, VGS = 0

I

D

= Max Rating

V

DS

= 0)

DS

GS

= 0)

V

= Max Rating, TC = 125 °C

DS

= ±30V

V

GS

500 V

8A

600 mJ

1µA

50 µA

±100 nA

ON

(1)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

V

GS(th)

R

DS(on)

I

D(on)

Gate Threshold Voltage
Static Drain-source On

Resistance

On State Drain Current

= VGS, ID = 250µA

DS

= 10V, ID = 4 A

V

GS

V

> I

D(on)

x R

DS

VGS=10V

DS(on)max,

234V

0.7 0.85

8A

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

> I

V

(1)

g

fs

C

iss

C

oss

C

rss

Forward Transconductance
Input Capacitance

Output Capacitance 165 pF
Reverse Transfer

Capacitance

DS

ID=4A

V

DS

x R

D(on)

DS(on)max,

= 25V, f = 1 MHz, VGS = 0

7.5 S

1050 pF

25 pF

Ω

2/10

STP8NC50/FP/STB8NC50-1

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

t

d(on)

Q
Q
Q

t

r

g
gs
gd

Turn-on Delay Time
Rise Time 14 ns
Total Gate Charge

Gate-Source Charge 5 nC
Gate-Drain Charge 18.2 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t

t

f

c

Off-voltage Rise Time
Fall Time 15 ns
Cross-over Time 26 ns

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD (1)

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pu l se duration = 300 µs, duty cycle 1.5 %.

2. Pulse width li mited by safe operating area .

Source-drain Current 8 A

(2)

Source-drain Current (pulsed) 32 A
Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge 3.2 µC
Reverse Recovery Current 13.7 A

= 250 V, ID = 4 A

DD

RG= 4.7Ω VGS = 10 V
(see test circuit, Figure 3)

V

= 400V, ID = 8 A,

DD

VGS = 10V

VDD = 400V, ID = 8 A,
RG=4.7Ω, V

GS

= 10V

(see test circuit, Figure 5)

ISD = 8 A, VGS = 0
ISD =8 A, di/dt = 100A/µs

VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)

19 ns

36 46 nC

13 ns

1.6 V

470 ns

Safe Operating Area for TO-220/I2PAK

Safe Operating Area for TO-220FP

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STP8NC50/FP/STB8NC50-1

Thermal Impedence for TO-220FPThermal Impedence for TO-220/I2PAK

Output Characteristics

Transconductance Static Drain-source On Resistance

Transfer Characteristics

4/10

STP8NC50/FP/STB8NC50-1

Gate Charge vs Gate-source Voltage Capacitance Variations

Normalized Gate Threshold Volta ge vs Temp.

Source-drain Diode Forward Characteristics

Normalized On Resistance vs Temperatur e

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STP8NC50/FP/STB8NC50-1

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

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E

TO-220 MECHANICAL DATA

STP8NC50/FP/STB8NC50-1

DIM.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

MIN. TYP. MAX. MIN. TYP. MAX.

mm inch

A

C

D

L5

Dia.

L7

D1

L6

L2

L9

F1

G1

F

H2

G

F2

L4

P011C

7/10

STP8NC50/FP/STB8NC50-1

TO-220FP MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

mm inch

E

A

D

8/10

B

L3

L6

L7

¯

F1

F

G1

H

G

F2

123

L2

L4

STP8NC50/FP/STB8NC50-1

TO-262 (I2PAK) MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106

B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368

e 2.4 2.7 0.094 0.106

E 10 10.4 0.393 0.409

L 13.1 13.6 0.515 0.531
L1 3.48 3.78 0.137 0.149
L2 1.27 1.4 0.050 0.055

mm inch

C

A

A1

C2

B2

B

e

E

L1

L2

D

L

P011P5/E

9/10

STP8NC50/FP/STB8NC50-1

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