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STB8NC50
N-CHANNEL 500V - 0.7Ω - 8A D2PAK
PowerMesh™II MOSFET
TYPE V
DSS
R
DS(on)
I
D
STB8NC50 500V < 0.85 Ω 8 A
■ TYPICAL R
■ EXTREMELY HIGH dv /d t C APABILITY
■ 100% AVALANCHE TESTED
■ NEW HIGH VOLTAGE BENCHMARK
■ GATE CHARGE MINIMIZED
(on) = 0.7Ω
DS
DESCRIPTION
The PowerMESH
generation of MESH OVERLAY
™II is the evolution of the first
™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lea ding edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITH MODE POWER SUPPLI ES ( SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVES
3
1
D2PAK
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
IDM (●)
P
TOT
dv/dt(1) Peak Diode Recovery voltage slope 3 V/ns
T
stg
T
j
(•)Pu l se width limite d by safe operat i ng area
≤8A, di/dt ≤300A/µs, VDD ≤ V
(1)I
SD
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
500 V
500 V
Gate- source Voltage ±30 V
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
8A
5.4 A
Drain Current (pulsed) 32 A
Total Dissipation at TC = 25°C
135 W
Derating Factor 1 W/°C
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C
, Tj ≤ T
(BR)DSS
JMAX.
1/9November 2001
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STB8NC50
THERMA L D ATA
Rthj-case Thermal Resistance Junction-case Max 0.93 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
Maximum Lead Temperature For Soldering Purpose 300 °C
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
= 25 °C, ID = IAR, VDD = 50 V)
j
= 250 µA, VGS = 0
I
D
= Max Rating
V
DS
= 0)
DS
GS
= 0)
V
= Max Rating, TC = 125 °C
DS
= ±30V
V
GS
500 V
8A
600 mJ
1µA
50 µA
±100 nA
ON
(1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
Resistance
= VGS, ID = 250µA
DS
= 10V, ID = 4 A
V
GS
234V
0.7 0.85 Ω
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
> I
V
(1)
g
fs
C
iss
C
oss
C
rss
Forward Transconductance
Input Capacitance
Output Capacitance 165 pF
Reverse Transfer
Capacitance
I
DS
D
V
=2A
DS
x R
D(on)
DS(on)max,
= 25V, f = 1 MHz, VGS = 0
7.5 S
1050 pF
25 pF
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STB8NC50
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time 14 ns
Total Gate Charge
Gate-Source Charge 5 nC
Gate-Drain Charge 18.2 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
f
c
Off-voltage Rise Time
Fall Time 15 ns
Cross-over Time 26 ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (2)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pu l se duration = 300 µs, duty cycle 1.5 %.
2. Pulse width li mited by safe operating area .
Source-drain Current 8 A
(2)
Source-drain Current (pulsed) 32 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge 3.2 µC
Reverse Recovery Current 13.7 A
= 250V, ID = 4A
DD
RG= 4.7Ω VGS = 10V
(see test circuit, Figure 3)
V
= 400V, ID = 8A,
DD
VGS = 10V
V
= 400V, ID = 8A,
DD
RG=4.7Ω, V
GS
= 10V
(see test circuit, Figure 5)
ISD = 8A, VGS = 0
ISD = 8A, di/dt = 100A/µs,
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
19 ns
36 45 nC
13 ns
1.6 V
470 ns
Safe Operating Area Thermal Impedance
3/9
Page 4
STB8NC50
Transfer CharacteristicsOutput Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
Static Drain-source On Resistance
Capacitance Variations
4/9
Page 5
STB8NC50
Normalized Gate Thereshold Voltage vs Temp.
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperatur e
5/9
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STB8NC50
Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
6/9
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2
D
PAK MECH ANICAL DATA
STB8NC50
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009
B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067
C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.048 0.053
D 8.95 9.35 0.352 0.368
D1 8 0.315
E 10 10.4 0.393
E1 8.5 0.334
G 4.88 5.28 0.192 0.208
L 15 15.85 0.590 0.625
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068
mm. inch
M 2.4 3.2 0.094 0.126
R 0.4 0.015
V2 0º8º
3
7/9
1
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STB8NC50
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT (suffix ”T4”)*
TUBE SHIPMENT (no suffix)*
REEL MECHANICAL DATA
DIM.
A 330 12.992
B 1.5 0.059
C 12 .8 13.2 0.504 0.520
D 20 .2 0795
G 24 .4 26. 4 0.960 1.039
N 100 3 .937
T 30.4 1.197
mm inch
MIN. MAX. MIN. MAX.
TAPE MECHANICAL DATA
DIM.
A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626
D 1.5 1.6 0.059 0.063
D1 1.59 1.61 0.062 0.063
E 1.65 1.85 0.065 0.073
F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 1 1.9 12.1 0.468 0.476
P2 1.9 2.1 0.075 0.082
R 50 1.574
T 0.25 0.35 0.0098 0.0137
W 23.7 24.3 0.933 0.956
* on sales type
8/9
mm inch
MIN. MAX. MIN. MAX.
BASE QTY BULK QTY
1000 1000
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STB8NC50
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such informa tion n or for an y infring ement of patent s or other rig hts of third part ies which may resu lt from its use . No l i cen se i s
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
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