Datasheet STB8NA50 Datasheet (SGS Thomson Microelectronics)

STB8NA50

N - CHANNEL ENHANCEMENT MODE

FAST POWER MOS TRANSISTOR

TYPE V

DSS

R

DS(on )

I

D

STB 8NA50 500 V < 0.85 Ω 8A

 TYPICALR
 ± 30V GATE TO SOURCE VOLTAGE RATING
 100% AVALANCHETESTED
 REPETITIVEAVALANCHEDATAAT100
 LOW INTRINSIC CAPACITANCES
 GATECHARGE MINIMIZED
 REDUCEDTHRESHOLD VOLTAGESPREAD
 THROUGH-HOLEI2PAK (TO-262) POWER

DS(on)

= 0.7 Ω

o

C

PACKAGEIN TUBE(SUFFIX ”-1”)

 SURFACE-MOUNTING D2PACK (TO-263)

POWERPACKAGEIN TUBE(NO SUFFIX)
OR IN TAPE &REEL (SUFFIX ”T4”)

APPLICATIONS

 HIGH CURRENT, HIGHSPEED SWITCHING
 SWITCHMODE POWER SUPPLIES (SMPS)
 DC-AC CONVERTERSFOR WELDING

EQUIPMENTANDUNINTERRUPTIBLE
POWERSUPPLIESAND MOTOR DRIVE

3

2

1

I2PAK

TO-262

1

D2PAK
TO-263

INTERNAL SCHEMATIC DIAGRAM

3

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Val ue Uni t

V

V

V

I

DM

P

T

(•) Pulsewidth limitedby safeoperating area

October 1995

Drain-source Voltage (VGS= 0) 500 V

DS

Drain- gate V olt age (RGS=20kΩ) 500 V

DGR

Gate-s ource Vo ltage ± 30 V

GS

I

Drain Current (continuous) at Tc=25oC8A

D

I

Drain Current (continuous) at Tc=100oC5.3A

D

(•) Drain Current (pulsed) 32 A

Tot al Dissipat ion at Tc=25oC 125 W

tot

Derat ing Fa ct or 1 W/
Sto rage Tem perature -65 to 15 0

stg

T

Max. Operat ing Juncti on Temper at u r e 150

j

o
o

o

C
C
C

1/10

STB8NA50

THERMAL DATA

R

thj-case

R

thj-amb

R

thc-sink

T

AVALANCHE CHARACTERISTICS

Symb ol Param et er Max V al ue Uni t

I

AR

E

E

I

AR

Therm al Resistanc e Juncti on-c ase Max
Therm al Resistanc e Juncti on-am b ient Max
Therm al Resistanc e Case-sink Ty p
Maxim um Lead Tem p era t ure For So ldering Purpose

l

Avalanc h e Current , Repet it ive or Not-Repetiti ve
(pulse width limited by T

Single Pulse A valanche E ne r gy

AS

(starting T
Repetit ive Avalanche Energy

AR

=25oC, ID=IAR,VDD=50V)

j

(pulse width limited by T

max, δ <1%)

j

max, δ <1%)

j

Avalanc h e Current , Repet it ive or Not-Repetiti ve

=100oC, pu lse width limited by Tjmax, δ <1%)

(T

c

1

62.5

0.5

300

8A

350 mJ

11 mJ

5.3 A

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

=25oC unlessotherwise specified)

case

OFF

Symb ol Par amete r Test Cond i ti ons Min. Typ . Max. Uni t

V

(BR)DSS

Drain-s ource

ID= 250 µAVGS=0 500 V

Break down Vol t age

I

DSS

I

GSS

Zero G ate Voltage
Drain Current (V

GS

Gat e- body Leakage
Current (V

DS

=0)

=0)

V

= Max Rating

DS

= Max Rating x 0. 8 Tc=125oC

V

DS

V

= ± 30 V ± 100 nA

GS

250

1000µAµA

ON (∗)

Symb ol Par amete r Test Cond i ti ons Min. Typ . Max. Uni t

V

GS(t h)

R

DS(on)

I

D(on)

Gat e Threshold Voltage VDS=VGSID= 250 µ A 2.25 3 3.75 V
Sta t ic D rain-sourc e On

Resistance

VGS= 10V ID=4A

=10V ID=4A Tc=100oC

V

GS

On St ate Drain Cur rent VDS>I

D(on)xRDS(on)max

8A

0.7 0.85

1.7

VGS=10V

DYNAMIC

Symb ol Par amete r Test Cond i ti ons Min. Typ . Max. Uni t

g

(∗)Forward

fs

Tra nsconductanc e

C

C

C

Input Capacitance

iss

Out put Capacitanc e

oss

Reverse Transfer

rss

Capacit an c e

VDS>I

D(on)xRDS(on)maxID

=4A 4.5 6.5 S

VDS=25V f=1MHz VGS= 0 1200

190

55

1600

250

75

Ω
Ω

pF
pF
pF

2/10

STB8NA50

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symb ol Par amete r Test Cond i ti ons Min. Typ . Max. Uni t

t

d(on)

t

r

Turn-on Time
Rise T ime

VDD= 250 V ID=4A

=4.7 Ω VGS=10V

R

G

(see test circuit, f igure 3)

(di/dt)

Turn-on Current Slope VDD= 400 V ID=8A

on

=47 Ω VGS=10V

R

G

(see test circuit, f igure 5)

Q
Q
Q

Total Ga te Charge

g

Gat e- Source Char ge

gs

Gate-Drain Charge

gd

VDD=400V ID=8A VGS=10V 55

SWITCHING OFF

Symb ol Par amete r Test Cond i ti ons Min. Typ . Max. Uni t

t

r(Voff)

t

Off-volt ag e Ris e Time

t

Fall Time

f

Cross-over Time

c

VDD= 400 V ID=8A

=4.7 Ω VGS=10V

R

G

(see test circuit, f igure 5)

SOURCEDRAIN DIODE

18
25

25
35

220 A/µs

75 nC

9

25

15
15
25

22
22
35

ns
ns

nC
nC

ns
ns
ns

Symb ol Par amete r Test Cond i ti ons Min. Typ . Max. Uni t

I

SDM

I

SD

Source-drain Curr ent

(•)

Source-drain Curr ent

8

32

(pulsed)

(∗) F orward O n Volt ag e ISD=8A VGS=0 1.6 V

V

SD

t

Q

Revers e Recovery

rr

Time
Revers e Recovery

rr

ISD= 8 A di/dt = 100 A/µs

=100V Tj=150oC

V

DD

(see test circuit, f igure 5)

500

6.5

Charge

I

RRM

Revers e Recovery

26

Current

(∗) Pulsed: Pulse duration =300 µs, duty cycle1.5 %
(•) Pulse widthlimitedby safe operating area

Safe Operating Area ThermalImpedance

A
A

ns

µC

A

3/10

STB8NA50

Derating Curve

TransferCharacteristics

Output Characteristics

Transconductance

Static Drain-sourceOn Resistance

4/10

Gate Charge vsGate-source Voltage

STB8NA50

CapacitanceVariations

NormalizedOn Resistance vs Temperature

NormalizedGate Threshold Voltage vs
Temperature

Turn-onCurrent Slope

Turn-offDrain-source VoltageSlope

Cross-overTime

5/10

STB8NA50

SwitchingSafe OperatingArea

Source-drainDiode ForwardCharacteristics

AccidentalOverload Area

Fig. 1: UnclampedInductive Load TestCircuit

6/10

Fig. 2: UnclampedInductive Waveform

STB8NA50

Fig. 3: SwitchingTimes Test Circuits For

ResistiveLoad

Fig. 5: Test Circuit ForInductiveLoad Switching
And DIodeRecovery Times

Fig. 4: Gate Chargetest Circuit

7/10

STB8NA50

TO-262 (I2PAK) MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.3 4.6 0.169 0.181

A1 2.49 2.69 0.098 0.106

B 0.7 0.93 0.027 0.036
B1 1.2 1.38 0.047 0.054
B2 1.25 1.4 0.049 0.055

C 0.45 0.6 0.017 0.023
C2 1.21 1.36 0.047 0.053

D 9 9.35 0.354 0.368

e 2.44 2.64 0.096 0.104

E 10 10.28 0.393 0.404

L 13.2 13.5 0.519 0.531

L1 3.48 3.78 0.137 0.149
L2 1.27 1.37 0.050 0.054

mm inch

8/10

C

A

A1

C2

B2

B

e

E

L1

L2

D

L

TO-263 (D2PAK) MECHANICAL DATA

STB8NA50

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.3 4.6 0.169 0.181
A1 2.49 2.69 0.098 0.106

B 0.7 0.93 0.027 0.036
B2 1.25 1.4 0.049 0.055

C 0.45 0.6 0.017 0.023
C2 1.21 1.36 0.047 0.053

D 9 9.35 0.354 0.368

E 10 10.28 0.393 0.404

G 4.88 5.28 0.192 0.208

L 15 15.85 0.590 0.624

L2 1.27 1.37 0.050 0.054
L3 1.4 1.75 0.055 0.068

mm inch

E

A

C2

L2

D

L

L3

B2

B

A1

C

G

9/10

STB8NA50

Information furnished is believed to be accurateand reliable.However, SGS-THOMSON Microelectronics assumes no responsabilityfor the
consequences of use of such information nor forany infringement of patents orother rightsof third parties which may results from its use. No
licenseis granted by implication orotherwise underany patentor patent rights of SGS-THOMSONMicroelectronics. Specifications mentioned
in this publicationare subjectto change withoutnotice. This publicationsupersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsarenotauthorized foruseas critical components in life supportdevicesor systemswithoutexpress
writtenapproval of SGS-THOMSON Microelectonics.

 1995 SGS-THOMSONMicroelectronics - All Rights Reserved

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