Datasheet Si2365EDS Datasheet (Vishay) [ru]

PRODUCT SUMMARY

S

G

D

P-Channel MOSFET

VDS (V) R

0.0320 at V

- 20

0.0410 at V

0.0675 at V

G

DS(on)

1

() Max.

= - 4.5 V

GS

= - 2.5 V

GS

= - 1.8 V

GS

TO-236

(SOT-23)

New Product

P-Channel 20 V (D-S) MOSFET

FEATURES

a

I

(A)

D

Qg (Typ.)

- 5.9

- 5.2

13.8 nC

- 4.3

3

D

• TrenchFET® Power MOSFET

•100 % R

Tested

g

• Built-in ESD Protection

- Typical ESD Performance 3000 V

• Material categorization:
For definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

•

Power Management for Portable and Consumer

- Load Switches

- DC/DC Converters

Si2365EDS

Vishay Siliconix

S

2

Top View

Si2365EDS (P6)*

* Marking Code

Ordering Information:

Si2365EDS-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter Symbol Limit Unit

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

Pulsed Drain Current (t = 300 µs)

Continuous Source-Drain Diode Current

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

d, e

= 25 °C

T

C

= 70 °C

T

C

= 25 °C

T

A

TA = 70 °C

T

= 25 °C

C

T

= 25 °C

A

= 25 °C

T

C

T

= 70 °C

C

T

= 25 °C

A

TA = 70 °C

V

DS

V

GS

I

D

I

DM

I

S

P

D

, T

T

J

stg

- 20
± 8

- 5.9

- 4.7

b, c

- 4.5

b, c

- 3.6

- 20

- 1.4

b, c

- 1

1.7

1.1

b, c

1

b, c

0.6

- 55 to 150
260

V

A

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain) Steady State

Notes:

= 25 °C.

a. T

C

b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 175 °C/W.

Document Number: 63199
S13-0301-Rev. B, 11-Feb-13

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

b, d

t  5 s

R

thJA

R

thJF

For technical questions, contact: [e-mail]

This document is subject to change without notice.

100 130

60 75

°C/W

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New Product

Si2365EDS

Vishay Siliconix

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

V

Temperature Coefficient VDS/T

DS

V

Temperature Coefficient V

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Dynamic

b

a

a

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n -O n De l ay T i m e

Rise Time

Turn-Off Delay Time

Fall Time

Tur n -O n De l ay T i m e

Rise Time

Turn-Off Delay Time

Fall Time

V

DS

J

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

VGS = 0 V, ID = - 250 µA

ID = - 250 µA

V

= VGS, ID = - 250 µA

DS

VDS = 0 V, VGS = ± 8 V

V

= 0 V, VGS = ± 4.5 V

DS

V

V

DS

V

DS

V

DS

= - 20 V, V

DS

= - 20 V, V

- 5 V, V

DS

V

= - 4.5 V, ID = - 4 A

GS

V

= - 2.5 V, ID = - 4 A

GS

V

= - 1.8 V, ID = - 2 A

GS

= - 10 V, V

= - 10 V, V

GS

GS

GS

= 0 V

GS

= 0 V, TJ = 55 °C

= - 4.5 V

GS

= - 8 V, ID = - 4.5 A

= - 4.5 V, ID = - 4.5 A

f = 1 MHz 2.2 11 22 

V

= - 10 V, RL = 2.8 

DD

 - 3.6 A, V

I

D

V

 - 3.6 A, V

I

D

DD

= - 4.5 V, Rg = 1 

GEN

= - 10 V, RL = 2.8 

= - 8 V, Rg = 1 

GEN

TC = 25 °C

IS = - 3.6 A, V

GS

= 0 V

IF = - 3.6 A, dI/dt = 100 A/µs, TJ = 25 °C

- 20 V

- 14

2.5

mV/°C

- 0.4 - 1 V

± 10

± 1

- 1

- 10

- 15 A

0.0265 0.0320

0.0340 0.0410

0.0465 0.0675

23.8 36

13.8 21

1.9

3

22 33

21 32

62 93

14 21

918

612

65 98

15 23

- 1.4

- 20

- 0.8 - 1.2 V

13 20 ns

510nC

8

5

µA



nC

ns

A

ns

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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: [e-mail]

This document is subject to change without notice.

Document Number: 63199

S13-0301-Rev. B, 11-Feb-13

New Product

0.000

0.010

0.020

0.030

0.040

0.050

0 3 6 9 12 15

I

GSS

- Gate Current (mA)

VGS - Gate-Source Voltage (V)

TJ = 25 °C

0

3

6

9

12

15

0 0.5 1 1.5 2

I

D

- Drain Current (A)

VDS - Drain-to-Source Voltage (V)

VGS = 1.5 V

V

GS

= 8 V thru 2 V

VGS = 1 V

10

-9

10

-8

10

-7

10

-6

10

-5

10

-4

10

-3

10

-2

0 4 8 12 16 20

I

GSS

- Gate Current (A)

VGS - Gate-to-Source Voltage (V)

TJ = 150 °C

TJ = 25 °C

0

0.1

0.2

0.3

0.4

0.5

0 0.35 0.7 1.05 1.4

I

D

- Drain Current (A)

VGS - Gate-to-Source Voltage (V)

TC = 25 °C

TC = 125 °C

TC = - 55 °C

0

500

1000

1500

2000

0 5 10 15 20

C - Capacitance (pF)

VDS - Drain-to-Source Voltage (V)

C

C

oss

C

rss

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Si2365EDS

Vishay Siliconix

Gate Current vs. Gate-Source Voltage

Output Characteristics

0.1

0.08

0.06

VGS = 1.8 V

Gate Current vs. Gate-Source Voltage

Transfer Characteristics

0.04

- On-Resistance (Ω)

DS(on)

R

Document Number: 63199
S13-0301-Rev. B, 11-Feb-13

0.02

0

0 5 10 15 20

ID - Drain Current (A)

On-Resistance vs. Drain Current

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VGS = 2.5 V

VGS = 4.5 V

For technical questions, contact: [e-mail]

This document is subject to change without notice.

Capacitance

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New Product

0

2

4

6

8

0 5 10 15 20 25

V

GS

- Gate-to-Source Voltage (V)

Qg - Total Gate Charge (nC)

VDS = 16 V

VDS = 5 V

VDS = 10 V

ID = 4.5 A

0

10

20

30

0.001 0.01 0.1 1 10 100
Time (s)

Power (W)

0.7

0.9

1.1

1.3

1.5

- 50 - 25 0 25 50 75 100 125 150

R

DS(on)

- On-Resistance

(Normalized)

TJ - Junction Temperature (°C)

ID = 4 A

VGS = 4.5 V

VGS = 2.5 V

0.2

0.3

0.4

0.5

0.6

0.7

- 50 - 25 0 25 50 75 100 125 150

V

GS(th)

(V)

TJ - Temperature (°C)

I

= 250 μA

0.000

0.020

0.040

0.060

0.080

0 2 4 6 8

R

DS(on)

- On-Resistance (Ω)

VGS - Gate-to-Source Voltage (V)

TJ = 125 °C

TJ = 25 °C

ID = 4 A

Si2365EDS

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Gate Charge

Single Pulse Power, Junction-to-Ambient

100

10

TJ = 150 °C

On-Resistance vs. Junction Temperature

Threshold Voltage

1

- Source Current (A)

S

I

0.1

0.0 0.3 0.6 0.9 1.2 1.5

VSD - Source-to-Drain Voltage (V)

Soure-Drain Diode Forward Voltage

TJ = 25 °C

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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

On-Resistance vs. Gate-to-Source Voltage

For technical questions, contact: [e-mail]

This document is subject to change without notice.

Document Number: 63199

S13-0301-Rev. B, 11-Feb-13

New Product

0.001

0.01

0.1

1

10

100

0.1 1 10 100

I

D

- Drain Current (A)

VDS - Drain-to-Source Voltage (V)

* V

GS

> minimum VGS at which R

DS(on)

is specied

100 ms

Limited by R

DS(on)

*

1 ms

TA= 25 °C
Single Pulse

BVDSS Limited

10 ms

100 μs

10 s,

1 s

DC

0

0.5

1

1.5

2

0 25 50 75 100 125 150

Power (W)

TC - Case Temperature (°C)

0.0

0.2

0.4

0.5

0.7

0.9

0 25 50 75 100 125 150

Power (W)

TA - Ambient Temperature (°C)

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

5.6

4.2

2.8

- Drain Current (A)

D

I

1.4

Si2365EDS

Vishay Siliconix

7

0

0 25 50 75 100 125 150

TC - Case Temperature (°C)

Safe Operating Area, Junction-to-Ambient

Power Junction-to-Case

Current Derating*

Power Junction-to-Ambient

* The power dissipation PD is based on T

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Document Number: 63199
S13-0301-Rev. B, 11-Feb-13

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

J(max.)

For technical questions, contact: [e-mail]

This document is subject to change without notice.

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5

New Product

10

-3

10

-2

000101110

-1

10

-4

100

0.2

0.1

Square WavePulse Duration (s)

Normalized Effective Transient

Thermal Impedance

1

0.1

0.01

Duty Cycle = 0.5

Single Pulse

0.02

0.05

0.001

t

1

t

2

Notes:

P

DM

1. Duty Cycle, D =

2. Per Unit Base = R

thJA

= 175 °C/W

3. T

JM-TA=PDMZthJA

(t)

t

1

t

2

4. Surface Mounted

1

0.1

0.01

0.2

Duty Cycle = 0.5

Square WavePulse Duration (s)

Normalized Effective Transient

Thermal Impedance

Single Pulse

0.1

10

-3

10

-2

110

-1

10

-4

0.02

0.05

Si2365EDS

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Normalized Thermal Transient Impedance, Junction-to-Foot

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63199

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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

.

For technical questions, contact: [e-mail]

This document is subject to change without notice.

Document Number: 63199

S13-0301-Rev. B, 11-Feb-13

SOT-23 (TO-236): 3-LEAD

b

3

1

Package Information

Vishay Siliconix

E

E

1

2

S

A

A

2

A

1

Dim

A 0.89 1.12 0.035 0.044

A

1

A

2

b 0.35 0.50 0.014 0.020

c 0.085 0.18 0.003 0.007

D 2.80 3.04 0.110 0.120

E 2.10 2.64 0.083 0.104

E

1

e 0.95 BSC 0.0374 Ref

e

1

L 0.40 0.60 0.016 0.024

L

1

S 0.50 Ref 0.020 Ref

q 3°8°3°8°

ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479

e

e

1

D

0.10 mm

Seating Plane

C

0.004"

C

C

q

L

L

1

MILLIMETERS INCHES

Min Max Min Max

0.01 0.10 0.0004 0.004

0.88 1.02 0.0346 0.040

1.20 1.40 0.047 0.055

1.90 BSC 0.0748 Ref

0.64 Ref 0.025 Ref

0.25 mm

Gauge Plane

Seating Plane

Document Number: 71196
09-Jul-01

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1

Mounting LITTLE FOOTR SOT-23 Power MOSFETs

Wharton McDaniel

AN807

Vishay Siliconix

Surface-mounted LITTLE FOOT power MOSFETs use integrated
circuit and small-signal packages which have been been modified
to provide the heat transfer capabilities required by power devices.
Leadframe materials and design, molding compounds, and die
attach materials have been changed, while the footprint of the
packages remains the same.

See Application Note 826, Recommended Minimum Pad

Patterns With Outline Drawing Access for Vishay Siliconix
MOSFETs, (http://www.vishay.com/doc?72286), for the basis

of the pad design for a LITTLE FOOT SOT-23 power MOSFET
footprint . In converting this footprint to the pad set for a power
device, designers must make two connections: an electrical
connection and a thermal connection, to draw heat away from the
package.

The electrical connections for the SOT-23 are very simple. Pin 1 is
the gate, pin 2 is the source, and pin 3 is the drain. As in the other
LITTLE FOOT packages, the drain pin serves the additional
function of providing the thermal connection from the package to
the PC board. The total cross section of a copper trace connected
to the drain may be adequate to carry the current required for the
application, but it may be inadequate thermally. Also, heat spreads
in a circular fashion from the heat source. In this case the drain pin
is the heat source when looking at heat spread on the PC board.

ambient air. This pattern uses all the available area underneath the
body for this purpose.

0.114

2.9

0.081

2.05

0.150

3.8

0.059

1.5

0.0394

FIGURE 1. Footprint With Copper Spreading

1.0

0.037

0.95

Since surface-mounted packages are small, and reflow soldering
is the most common way in which these are affixed to the PC
board, “thermal” connections from the planar copper to the pads
have not been used. Even if additional planar copper area is used,
there should be no problems in the soldering process. The actual
solder connections are defined by the solder mask openings. By
combining the basic footprint with the copper plane on the drain
pins, the solder mask generation occurs automatically.

Figure 1 shows the footprint with copper spreading for the SOT-23
package. This pattern shows the starting point for utilizing the
board area available for the heat spreading copper. To create this
pattern, a plane of copper overlies the drain pin and provides
planar copper to draw heat from the drain lead and start the
process of spreading the heat so it can be dissipated into the

Document Number: 70739
26-Nov-03

A final item to keep in mind is the width of the power traces. The
absolute minimum power trace width must be determined by the
amount of current it has to carry. For thermal reasons, this
minimum width should be at least 0.020 inches. The use of wide
traces connected to the drain plane provides a low-impedance
path for heat to move away from the device.

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1

RECOMMENDED MINIMUM PADS FOR SOT-23

Application Note 826

Vishay Siliconix

0.106
(2.692)

0.037

(0.950)

0.053

(1.341)

0.097

(2.459)

Recommended Minimum Pads

Dimensions in Inches/(mm)

0.022

(0.559)

0.049

0.029

(1.245)

(0.724)

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Document Number: 72609 www.vishay.com
Revision: 21-Jan-08 25

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APPLICATION NOTE

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Disclaimer

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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12

1

Document Number: 91000