Datasheet Si2343CDS Datasheet (Vishay) [ru]

P-Channel 30-V (D-S) MOSFET

Si2343CDS

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

0.045 at V

- 30

0.075 at V

DS(on)

GS

GS

(Ω)

= - 10 V

= - 4.5 V

I

D

(A)

- 5.9

- 4.6

a, e

Qg (Typ.)

7 nC

FEATURES

• Halogen-free According to IEC 61249-2-21
Definition

•TrenchFET

• 100 % R

• Compliant to RoHS Directive 2002/95/EC

®

Power MOSFET

Tested

g

APPLICATIONS

• Load Switch

TO-236

(SOT-23)

G

1

D

3

S

2

Top View

Si2343CDS (P1)*

* Marking Code

Ordering Information: Si2343CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)

• Notebook Adaptor Switch

• DC/DC Converter

S

G

D

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage V

Gate-Source Voltage V

T

= 25 °C

C

= 70 °C - 4.7

T

Continuous Drain Current (T

= 150 °C)

J

C

T

= 25 °C

A

TA = 70 °C

Pulsed Drain Current I

T

= 25 °C

Continous Source-Drain Diode Current

Maximum Power Dissipation

C

T

= 25 °C

A

T

= 25 °C

C

T

= 70 °C

C

= 25 °C

T

A

TA = 70 °C

Operating Junction and Storage Temperature Range

T

DS

GS

I

D

DM

I

S

P

D

, T

J

stg

- 30

± 20

- 5.9

b, c

- 4.2

b, c

- 3.3

- 25

- 2.1

b, c

- 1

2.5

1.6

b, c

1.25

b, c

0.8

- 55 to 150

V

A

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain) Steady State

Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.

= 25 °C.

C

c. t = 5 s.
d. Maximum under Steady State conditions is 166 °C/W.
e. Package Limited.

Document Number: 65474
S09-2270-Rev. A, 02-Nov-09

b, d

t ≤ 5 s

R

thJA

R

thJF

75 100

40 50

°C/W

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Si2343CDS

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

V

Drain-Source Breakdown Voltage

V

Temperature Coefficient

DS

V

Temperature Coefficient

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

a

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n - O n D e l ay Time

Rise Time

Turn-Off Delay Time

Fall Ti me

Tur n - O n D e l ay Time

Rise Time

Turn-Off Delay Time

Fall Ti me

a

V

DS

ΔV

DS/TJ

ΔV

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.

V

DS

V

V

DS

V

DS

≅ - 3.3 A, V

I

D

≅ - 3.3 A, V

I

D

IF = - 3.3 A, dI/dt = 100 A/µs, TJ = 25 °C

= 0 V, ID = - 250 µA

GS

ID = - 250 µA

VDS = V

V

= 0 V, V

DS

V

= - 30 V, V

DS

= - 30 V, V

≤ - 5 V, V

DS

V

= - 10 V, ID = - 4.2 A

GS

V

= - 4.5 V, ID = - 3.2 A

GS

V

= - 15 V, ID = - 4.2 A

DS

= - 15 V, V

DS

= - 15 V, V

= - 15 V, V

f = 1 MHz 1 5 10 Ω

V

= - 15 V, RL = 4.5 Ω

DD

V

= - 15 V, RL = 4.5 Ω

DD

TC = 25 °C

IS = - 3.3 A, V

, ID = - 250 µA

GS

= ± 20 V

GS

= 0 V

GS

= 0 V, TJ = 55 °C

GS

= - 10 V

GS

= 0 V, f = 1 MHz

GS

= - 10 V, ID = - 4.2 A

GS

= - 4.5 V, ID = - 4.2 A

GS

= - 4.5 V, Rg = 1 Ω

GEN

= - 10 V, Rg = 1 Ω

GEN

= 0 V

GS

- 30 V

- 19

4.4

mV/°C

- 1.2 - 2.5 V

± 100 nA

- 1

- 5

- 25 A

0.037 0.045

0.062 0.075

10 S

590

115

93

13.6 21

711

2.3

3.2

30 45

25 38

16 24

816

816

10 20

18 27

816

- 4.2

- 25

- 0.8 - 1.2 V

17 26 ns

918nC

10

7

µA

Ω

pFOutput Capacitance

nC

ns

A

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

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Document Number: 65474

S09-2270-Rev. A, 02-Nov-09

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si2343CDS

Vishay Siliconix

25

VGS=10V thru 6 V

20

15

10

- Drain Current (A)I

D

5

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

- Drain-to-Source Voltage (V)

V

DS

VGS=5V

Output Characteristics

0.10

0.08

0.06

VGS=4.5V

VGS=4V

VGS=3V

3.0

2.4

1.8

1.2

- Drain Current (A)I

D

0.6

0.0
01234

V

GS

TC= 25 °C

TC= 125 °C

TC= - 55 °C

- Gate-to-Source Voltage (V)

Transfer Characteristics

1000

800

C

iss

600

- On-Resistance (Ω)R

0.04

DS(on)

0.02

0.00

VGS=10V

0 5 10 15 20 25

ID- Drain Current (A)

On-Resistance vs. Drain Current

10

ID= 4.2 A

8

6

4

- Gate-to-Source Voltage (V)

GS

2

V

0

03691215

Qg- Total Gate Charge (nC)

VDS=15V

VDS= 8V

VDS=24V

Gate Charge

400

C - Capacitance (pF)

200

C

rss

0

0 5 10 15 20

C

oss

VDS- Drain-to-Source Voltage (V)

Capacitance

1.7

ID=4.2 A

1.5

1.3

- On-ResistanceR

1.1

(Normalized)

DS(on)

0.9

0.7

- 50 - 25 0 25 50 75 100 125 150

-Junction Temperature (°C)

T

J

VGS=10V

On-Resistance vs. Junction Temperature

VGS=4.5V

Document Number: 65474
S09-2270-Rev. A, 02-Nov-09

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Si2343CDS

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

100

10

- Source Current (A)I
1

S

0.1

0.0 0.3 0.6 0.9 1.2 1.5

TJ= 150 °C

TJ= 25 °C

VSD-Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

2.2

2.0

1.8

(V)V

GS(th)

1.6

ID= 250 µA

0.10

0.08

TJ= 125 °C

0.06

- On-Resistance (Ω)

DS(on)

0.04

R

0.02
2468 10

TJ=25 °C

VGS- Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

10

8

6

Power (W)

4

ID=4.2A

1.4

1.2

- 50 - 25 0 25 50 75 100 125 150

TJ- Temperature (°C)

Threshold Voltage

100

Limited byR

10

1

- Drain Current (A)

D

I

0.1

TA= 25 °C

Single Pulse

0.01

0.1 1 10 100

* V

GS

Safe Operating Area, Junction-to-Ambient

*

DS(on)

BVDSS Limited

- Drain-to-Source Voltage (V)

V

DS

> minimum VGSat which R

2

0

0.01 0.1 1 10 100 1000

TA= 25 °C

Time (s)

Single Pulse Power (Junction-to-Ambient)

100 µs

1ms

10 ms

100 ms

1s,10s
DC

is specified

DS(on)

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Document Number: 65474

S09-2270-Rev. A, 02-Nov-09

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

8

6

Package Limited

4

- Drain Current (A)

D

I

2

0

0 255075100125150

- Case Temperature (°C)

T

C

Current Derating*

Si2343CDS

Vishay Siliconix

2.5

2.0

1.5

Power (W)

1.0

0.5

0.0
0 25 50 75 100 125 150

- Case Temperature (°C)

T

C

Power, Junction-to-Foot

* The power dissipation PD is based on T
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

J(max)

1.0

0.8

0.6

Power (W)

0.4

0.2

0.0
0 25 50 75 100 125 150

-Ambient Temperature (°C)

T

A

Power, Junction-to-Ambient

limit.

Document Number: 65474
S09-2270-Rev. A, 02-Nov-09

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Si2343CDS

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

1

Duty Cycle = 0.5

0.2

Thermal Impedance

Normalized Effective Transient

Thermal Impedance

Normalized Effective Transient

0.1

0.01
10

1

0.1

0.01
10

0.1

0.05

0.02

Single Pulse

-4

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

Single Pulse

-4

Notes:

P

DM

t

1

t

2

t

100

thJA

1

t

2

(t)

=166 °C/W

100010

1. Duty Cycle, D =

2. Per Unit Base = R

-T

3. T

A=PDMZthJA

JM

4. Surface Mounted

-3

10

-2

10

-1

1

10

Square WavePulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

-3

10

-2

10

Square WavePulse Duration (s)

-1

10110

Normalized Thermal Transient Impedance, Junction-to-Foot

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65474

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.

Document Number: 65474

S09-2270-Rev. A, 02-Nov-09

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Vishay

Disclaimer

All product specifications and data are subject to change without notice.

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Revision: 18-Jul-08 1