Datasheet Si2327DS Datasheet (Vishay) [ru]

P-Channel 200-V (D-S) MOSFET

Si2327DS

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

- 200

2.35 at V

2.45 at V

(Ω)I

DS(on)

= - 10 V

GS

= - 6.0 V

GS

(A) Qg (Typ.)

D

- 0.49

- 0.48

8.0

FEATURES

• Halogen-free According to IEC 61249-2-21
Available

• TrenchFET

• Ultra Low On-Resistance

®

Power MOSFET

• Small Size

APPLICATIONS

• Active Clamp Circuits in DC/DC Power Supplies

TO-236

(SOT-23)

1

G

3

D

2

S

Top View

Si2327DS (D7)*

* Marking Code

Ordering Information: Si2327DS -T1-E3 (Lead (Pb)-free)

Si2327DS -T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol 5 s Steady State Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

a, b

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

a, b

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

Maximum Power Dissipation

a, b

Operating Junction and Storage Temperature Range

TA = 25 °C

T

= 70 °C

A

L = 1.0 mH

TA = 25 °C

= 70 °C

T

A

V

DS

V

GS

I

D

I

DM

I

S

I

AS

E

AS

P

D

T

, T

J

stg

- 0.49 - 0.38

- 0.39 - 0.31

- 200

± 20

- 1.0

- 1.0 - 0.6

4.0

0.8 mJ

1.25 0.75

0.8 0.48

- 55 to 150 °C

V

A

W

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a

t ≤ 5 s

Steady State 120 166

Maximum Junction-to-Foot (Drain) Steady State

Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Pulse width limited by maximum junction temperature.

Document Number: 73240
S09-0133-Rev. B, 02-Feb-09

R

thJA

R

thJF

75 100

°C/W

40 50

www.vishay.com

1

Si2327DS

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Limits

Parameter Symbol Test Conditions

Min. Typ. Max.

Static

V

Drain-Source Breakdown Voltage

Gate-Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-Resistance

Forward Transconductance

a

a

a

Diode Forward Voltage

Dynamic

b

Total Gate Charge

Gate-Drain Charge

Gate Resistance

Input Capacitance

Reverse Transfer Capacitance

Switching

c

Tur n -O n Ti m e

Turn-Off Time

Body Diode Reverse Recovery Charge

V

(BR)DSS

V

GS(th)

I

GSS

I

DSS

I

D(on)

R

DS(on)

g

V

Q

Q

Q

R

C

C

C

t

d(on)

t

d(off)

Q

fs

SD

gs

gd

iss

oss

rss

t

r

t

f

g

g

rr

V

DS

V

VDS = - 25 V, V

= 0 V, ID = - 250 µA

GS

V

= VGS, ID = - 250 µA

DS

VDS = 0 V, VGS = ± 20 V

V

= - 200 V, V

DS

= - 200 V, V

DS

V

GS

V

GS

GS

≤ - 15 V, V

= - 10 V, ID = - 0.5 A

= - 6.0 V, ID = - 0.5 A

= 0 V

GS

= 0 V, TJ = 55 °C

= 10 V

GS

VDS = - 15 V, ID = - 0.5 A

IS = - 1.0 A, V

V

= - 100 V, V

DS

I

D

≅ - 0.5 A

GS

GS

= 0 V

= 10 V

- 200

- 2.5 - 4.5

± 100 nA

- 1.0 A

1.9 2.35

1.96 2.45

1.8 S

- 0.85 - 1.2 V

8.0 12

1.3

2.5

f = 1.0 MHz 8.0 Ω

340 510

= 0 V, f = 1 MHz

GS

25

14

V

= - 100 V, RL = 100 Ω

DD

≅ - 1.0 A, V

I

D

R

= 6 Ω

g

GEN

= - 10 V

IF = 0.5 A, dI/dt = 100 A/µs

812

11 17

16 25

11 17

140 200 nC

- 1

- 10

Notes:
a. Pulse test: PW ≤ 300 µs duty cycle ≤ 2 %.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the de vice. These are stress rating s only, and functiona l operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

Unit

V

µA

Ω

nCGate-Source Charge

pFOutput Capacitance

ns

www.vishay.com
2

Document Number: 73240

S09-0133-Rev. B, 02-Feb-09

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si2327DS

Vishay Siliconix

1.0

0.8

0.6

0.4

- Drain Current (A)I

D

0.2

0.0
0246810

VGS = 10 thru 5 V

- Drain-to-Source Voltage (V)

V

DS

Output Characteristics

3.2

2.8

2.4

2.0

1.6

- On-Resistance (Ω)R

1.2

DS(on)

0.8

0.4

0.0

0.0 0.2 0.4 0.6 0.8 1.0

VGS = 6 V

VGS = 10 V

4 V

1.0

0.8

0.6

0.4

- Drain Current (A)I

D

0.2

0.0
012345

- Gate-to-Source Voltage (V)

V

GS

TC = 125 °C

25 °C

Transfer Characteristics

500

400

C

iss

300

200

C - Capacitance (pF)

100

C

rss

C

oss

0

0 30 60 90 120 150

- 55 °C

On-Resistance vs. Drain Current

10

VDS = 10 V

= 0.5 A

I

D

8

6

4

Gate-to-Source Voltage (V)

-

GS

2

V

0

012345678

Document Number: 73240
S09-0133-Rev. B, 02-Feb-09

ID - Drain Current (A)

Qg - Total Gate Charge (nC)

Gate Charge

VDS - Drain-to-Source Voltage (V)

Capacitance

2.2

1.9

1.6

1.3

- On-Resistance
(Normalized)

1.0

DS(on)

R

0.7

0.4

VGS = 10 V

= 0.5 A

I

D

- 50 - 25 0 25 50 75 100 125 150

T

- Junction Temperature (°C)

J

On-Resistance vs. Junction Temperature

www.vishay.com

3

Si2327DS

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

- Source Current (A)I

S

3

1

0.1

0.01
0 0.2 0.4 0.6 0.8

- Source-to-Drain Voltage (V)

V

SD

Source-Drain Diode Forward Voltage

1.0

0.7

0.4

Variance (V)V

0.1

GS(th)

- 0.2

TJ = 150 °C

ID = 250 µA

TJ = 25 °C

1.0 1.4

1.2

6

ID = 0.5 A

5

4

3

- On-Resistance (Ω)R
2

DS(on)

1

0

0246810

VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

12

10

8

6

Power (W)

4

TA = 25 °C

2

- 0.5

- 50 - 25 0 25 50 75 100 125 150

www.vishay.com
4

TJ - Temperature (°C)

Threshold Voltage

- Drain Current (A)I

D

0

0.01

10

IDMLimited

1

Limited by R

0.1

0.01

0.001

0.1 1 10 1000

* V

> minimum VGS at which R

GS

DS(on)*

TA = 25 °C

Single Pulse

Limited

BVDSS

- Drain-to-Source Voltage (V)

V

DS

DS(on)

100

is specified

Safe Operating Area

10 µs
100 µs

1 ms

10 ms

100 ms

10 s, 1 s
DC, 100 s

1

10 6000.1

Time (s)

Single Pulse Power

Document Number: 73240

S09-0133-Rev. B, 02-Feb-09

100

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

2

1

Duty Cycle = 0.5

Si2327DS

Vishay Siliconix

0.1

Thermal Impedance

Normalized Effective Transient

0.01

0.2

0.1

0.05

0.02

Single Pulse

-4

10

-3

10

-2

10

-1

1 10 60010

Notes:

P

DM

t

1

t

- TA = PDMZ

JM

2

1. Duty Cycle, D =

2. Per Unit Base = R

3. T

4. Surface Mounted

thJA

thJA

(t)

t

1

t

2

= 120 °C/W

100

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73240

Document Number: 73240

.

www.vishay.com

S09-0133-Rev. B, 02-Feb-09

5

SOT-23 (TO-236): 3-LEAD

b

3

1

Package Information

Vishay Siliconix

E

E

1

2

S

A

A

2

A

1

Dim

A 0.89 1.12 0.035 0.044

A

1

A

2

b 0.35 0.50 0.014 0.020

c 0.085 0.18 0.003 0.007

D 2.80 3.04 0.110 0.120

E 2.10 2.64 0.083 0.104

E

1

e 0.95 BSC 0.0374 Ref

e

1

L 0.40 0.60 0.016 0.024

L

1

S 0.50 Ref 0.020 Ref

q 3°8°3°8°

ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479

e

e

1

D

0.10 mm

Seating Plane

C

0.004"

C

C

q

L

L

1

MILLIMETERS INCHES

Min Max Min Max

0.01 0.10 0.0004 0.004

0.88 1.02 0.0346 0.040

1.20 1.40 0.047 0.055

1.90 BSC 0.0748 Ref

0.64 Ref 0.025 Ref

0.25 mm

Gauge Plane

Seating Plane

Document Number: 71196
09-Jul-01

www.vishay.com

1

Mounting LITTLE FOOTR SOT-23 Power MOSFETs

Wharton McDaniel

AN807

Vishay Siliconix

Surface-mounted LITTLE FOOT power MOSFETs use integrated
circuit and small-signal packages which have been been modified
to provide the heat transfer capabilities required by power devices.
Leadframe materials and design, molding compounds, and die
attach materials have been changed, while the footprint of the
packages remains the same.

See Application Note 826, Recommended Minimum Pad

Patterns With Outline Drawing Access for Vishay Siliconix
MOSFETs, (http://www.vishay.com/doc?72286), for the basis

of the pad design for a LITTLE FOOT SOT-23 power MOSFET
footprint . In converting this footprint to the pad set for a power
device, designers must make two connections: an electrical
connection and a thermal connection, to draw heat away from the
package.

The electrical connections for the SOT-23 are very simple. Pin 1 is
the gate, pin 2 is the source, and pin 3 is the drain. As in the other
LITTLE FOOT packages, the drain pin serves the additional
function of providing the thermal connection from the package to
the PC board. The total cross section of a copper trace connected
to the drain may be adequate to carry the current required for the
application, but it may be inadequate thermally. Also, heat spreads
in a circular fashion from the heat source. In this case the drain pin
is the heat source when looking at heat spread on the PC board.

ambient air. This pattern uses all the available area underneath the
body for this purpose.

0.114

2.9

0.081

2.05

0.150

3.8

0.059

1.5

0.0394

FIGURE 1. Footprint With Copper Spreading

1.0

0.037

0.95

Since surface-mounted packages are small, and reflow soldering
is the most common way in which these are affixed to the PC
board, “thermal” connections from the planar copper to the pads
have not been used. Even if additional planar copper area is used,
there should be no problems in the soldering process. The actual
solder connections are defined by the solder mask openings. By
combining the basic footprint with the copper plane on the drain
pins, the solder mask generation occurs automatically.

Figure 1 shows the footprint with copper spreading for the SOT-23
package. This pattern shows the starting point for utilizing the
board area available for the heat spreading copper. To create this
pattern, a plane of copper overlies the drain pin and provides
planar copper to draw heat from the drain lead and start the
process of spreading the heat so it can be dissipated into the

Document Number: 70739
26-Nov-03

A final item to keep in mind is the width of the power traces. The
absolute minimum power trace width must be determined by the
amount of current it has to carry. For thermal reasons, this
minimum width should be at least 0.020 inches. The use of wide
traces connected to the drain plane provides a low-impedance
path for heat to move away from the device.

www.vishay.com

1

RECOMMENDED MINIMUM PADS FOR SOT-23

Application Note 826

Vishay Siliconix

0.106
(2.692)

0.037

(0.950)

0.053

(1.341)

0.097

(2.459)

Recommended Minimum Pads

Dimensions in Inches/(mm)

0.022

(0.559)

0.049

0.029

(1.245)

(0.724)

Return to Index

Document Number: 72609 www.vishay.com
Revision: 21-Jan-08 25

Return to Index

APPLICATION NOTE

Legal Disclaimer Notice

www.vishay.com

Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.

Revision: 02-Oct-12

1

Document Number: 91000