• Can be Driven Directly from CMOS, NMOS,
and TTL Circuits
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175
= 0.022Ω
DS(ON)
o
C Operating Temperature
PSPICE Model
Ordering Information
P AR T NUMBERP ACKAGEBRAND
RFD16N02LTO-251AA16N02L
RFD16N02LSMTO-252AA16N02L
NOTE: When ordering, use the entire part number. Add the suffix
9A, to obtain the TO-252AA variant in tape and reel, e.g.
RFD16N02LSM9A.
Formerly developmental type TA49243.
Description
The RFD16N02L and RFD16N02LSM are N-Channel power
MOSFETs manufactured using the MegaFET process. This
process, which uses feature sizes approaching those of
LSI circuits, gives optimum utilization of silicon, resulting in
outstanding performance. They were designed for use in
applications such as switching regulators, switching converters, motor drivers and relay drivers. This performance is
accomplished through a special gate oxide design which
provides full rated conductance at gate bias in the 3V to 5V
range, thereby facilitating true on-off power control directly
from logic level (5V) integrated circuits.
Symbol
D
G
S
Packaging
(FLANGE)
DRAIN
JEDEC TO-251AAJEDEC TO-252AA
SOURCE
DRAIN
GATE
GATE
SOURCE
DRAIN
(FLANGE)
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
STG
L
16
Refer to UIS Curve
90
0.606
-55 to 175
260
A
W
W/oC
o
C
o
C
PARAMETERSYMBOLTEST CONDITIONSMINTYPMAXUNITS
Drain to Source Breakdown VoltageBV
Gate to Source Threshold VoltageV
GS(TH)
Zero Gate Voltage Drain CurrentI
Gate to Source Leakage CurrentI
Drain to Source On Resistancer
DS(ON)ID
Turn-On Timet
Turn-On Delay Timet
d(ON)
Rise Timet
Turn-Off Delay Timet
d(OFF)
Fall Timet
Turn-Off Timet
Total Gate ChargeQ
g(TOT)
Gate Charge at 5VQ
Threshold Gate ChargeQ
Input CapacitanceC
Output CapacitanceC
Reverse Transfer CapacitanceC
Thermal Resistance Junction to CaseR
Thermal Resistance Junction to AmbientR
DSS
DSS
GSS
ON
r
f
OFF
g(5)
g(TH)
ISS
OSS
RSS
θJC
θJA
ID = 250µA, VGS = 0V20--V
VGS = VDS, ID = 250µA1-2V
VDS = 20V,
VGS = 0V
TC = 25oC--1µA
TC = 150oC--50µA
VGS = ±10V--±100nA
= 16A, VGS = 5V--0.022Ω
VDD = 15V, I
RL = 0.93Ω, VGS = 5V,
RGS = 5Ω
≅ 16A,
D
--120ns
-15- ns
-95- ns
-25- ns
-27- ns
--80ns
VGS = 0V to 10V VDD≅ 16V,
I
≈ 16A,
VGS = 0V to 5V-3036nC
D
RL = 1.0Ω
-5060nC
VGS = 0V to 1V-1.51.8nC
VDS = 20V, VGS = 0V,
f = 1MHz
-1300-pF
-724-pF
-250-pF
--1.65
TO-251 and TO-252--100
o
C/W
o
C/W
Source to Drain Diode Specifications
PARAMETERSYMBOLTEST CONDITIONSMINTYPMAXUNITS
Source to Drain Diode VoltageV
Reverse Recovery Timet
.MODEL DBKMOD D (RS = 1.66e-1 TRS1 = -2.97e-3 TRS2 = 7.57e-6)
.MODEL DPLCAPMOD D (CJO = 1.25e-9 IS = 1e-30 N = 10)
.MODEL MOSMOD NMOS (VTO = 2.313 KP = 53.82 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL RBKMOD RES (TC1 = 8.95e-4 TC2 = -1e-7)
.MODEL RDSMOD RES (TC1 = 3.92e-3 TC2 = 1.29e-5)
.MODEL RSCLMOD RES (TC1 = 2.03e-3 TC2 = 0.45e-5)
.MODEL RVTOMOD RES (TC1 = -2.27e-3 TC2 = -5.75e-7)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.82 VOFF= -2.82)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.82 VOFF= -4.82)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.67 VOFF= 2.33)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 2.33 VOFF= -2.67)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring GlobalTemperature Options; written by William J. Hepp and C. Frank Wheatley.
7
Page 8
RFD16N02L, RFD16N02LSM
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under an y patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
EUROPE
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Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
ASIA
Intersil (Taiwan) Ltd.
Taiwan Limited
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
8
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