Datasheet RFH10N45, RFH10N50 Datasheet (Intersil)

Semiconductor

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RFH10N45, RFH10N50

Data Sheet October 1998 File Number 1629.2

[ /Title
(RFH10
N45,
RFH10N

50)
Subject

(10A,
450V
and
500V,

0.600

Ohm,
N-Chan­nel
Power
MOS­FETs)

Author

()

Key-

words
(Harris
Semi­conduc­tor,
N-Chan­nel
Power
MOS­FETs,
TO­218AC)

Creator

()

DOCIN

FO pdf­mark

10A, 450V and 500V, 0.600 Ohm,
N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated circuits.

Formerly developmental type TA17435.

Ordering Information

PART NUMBER PACKAGE BRAND

RFH10N45 TO-218AC RFH10N45
RFH10N50 TO-218AC RFH10N50

NOTE: When ordering, include the entire part number.

Packaging

JEDEC TO-218AC

DRAIN

(FLANGE)

Features

• 10A, 450V and 500V

•r

DS(ON)

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.600Ω

Components to PC Boards”

Symbol

D

G

S

SOURCE

DRAIN

GATE

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-800-4-HARRIS

| Copyright © Harris Corporation 1998

RFH10N45, RFH10N50S

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFH10N45 RFH10N50 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 1MΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . V

DSS

DGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

DM

GS

D

450 500 V
450 500 V

10 10 A

20 20 A
±20 ±20 V
150 150 W

Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2 1.2 W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

-55 to 150 -55 to 150

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

300
260

300
260

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

DSSID

= 250µA, VGS = 0V

RFH10N45 450 V
RFH10N50 500 V

Gate to Threshold Voltage V

GS(TH)VGS

Zero-Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Voltage (Note 2) V
Drain to Source On Resistance (Note 2) r
Turn-On Delay Time t

DS(ON)ID

DS(ON)ID

d(ON)ID

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance, Junction to Case R

DSS

GSS

r

f

ISS
OSS
RSS

JC

θ

= VDS, ID = 250µA (Figure 8) 2 - 4 V

VDS= Rated BV

DSS

VDS= 0.8 x Rated BV

TC = 125oC--25µA

DSS,

--1µA

VGS = ±20V, VDS = 0V - - ±100 nA

= 10A, VGS = 10V - - 6.0 V
= 10A, VGS = 10V (Figures 6, 7) - - 0.600 Ω

≈ 5A, V

R

= 50Ω, V

L

(Figures 10, 11, 12)

= 250V, R

DS

= 10V

GS

= 50Ω,

G

-2660ns

- 50 100 ns

- 525 900 ns

- 105 180 ns

VGS = 0V, VDS = 25V
f = 1MHz (Figure 9)

- - 3000 pF

- - 600 pF

- - 200 pF

- - 0.83oC/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage (Note 2) V
Diode Reverse Recovery Time t

NOTES:

2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

3. Repetitive rating: pulse width is limited by maximum junction temperature.

2

ISD = 10A - - 1.4 V

SD

ISD = 10A, dISD/dt = 100A/µs - 950 - ns

rr

Typical Performance Curves

RFH10N45, RFH10N50

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

TC, CASE TEMPERATURE (oC)

125

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

100

OPERATION IN THIS AREA
LIMITED BY r

10

1

, DRAIN CURRENT (A)

D

I

0.1
1 10 100 1000

DS(ON)

ID MAX CONTINUOUS

V
RFH10N45

V
RFH10N50

VDS, DRAIN TO SOURCE (V)

DS(MAX)

DS(MAX)

DC

= 450V

= 500V

TC = 25oC

TJ = MAX RATED

12
11
10

9
8
7
6
5
4

, DRAIN CURRENT (A)

3

D

I

2
1
0

25 50 75 100 125 150

, CASE TEMPERATURE (oC)

T

C

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

24

PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%

20

VGS = 10V, 8V

16

12

8

DRAIN CURRENT (A)

D,

I

4

0 8 10 12 14

VGS = 6V

6

42

V

DRAIN TO SOURCE VOLTAGE (V)

DS,

VGS = 5V

VGS = 4.5V

VGS = 4V

VGS = 3.5V

VGS = 3V

FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS

24

VDS= 25V
PULSE DURATION = 80µs

20

16

12

8

DRAIN TO SOURCE CURRENT (A)

4

DS(ON),

0

I

012345

V

GS,

125oC

GATE TO SOURCE VOLTAGE (V)

-40oC

25oC

67

1.2
VGS = 10V

PULSE DURATION = 80µs

1.0

0.8

0.6

0.4

DRAIN TO SOURCE ON

RESISTANCE (Ω)

0.2

DS(ON),

r

0

04 812 2428

125oC

o

25

C

-40oC

ID,DRAIN CURRENT (A)

16 20

FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN

CURRENT

3

RFH10N45, RFH10N50

Typical Performance Curves

3.0
ID= 10A

VGS = 10V

2.5

2.0

1.5

1.0

ON RESISTANCE

0.5

NORMALIZED DRAIN TO SOURCE

-50 0 50 100 150
JUNCTION TEMPERATURE (oC)

T

J,

(Continued)

FIGURE 7. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

4000

3000

F)

P

C

C

ISS

OSS

2000

1000

C, CAPACITANCE (

C

RSS

0

01020304050

V

DRAIN TO SOURCE VOLTAGE (V)

DS,

VGS = 0V, f = 1MHz
C

= CGS + C

ISS

C

= C

RSS
OSS

GD

≈ CDS + C

C

FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

GD

GS

1.4
ID= 250µA

1.3

1.2

1.1

1.0

0.9

NORMALIZED GATE

0.8

THRESHOLD VOLTAGE

0.7

0.6

-50 0 50 100
T

JUNCTION TEMPERATURE (oC)

J,

FIGURE 8. NORMALIZED GATETO THRESHOLD VOLTAGE

vs JUNCTION TEMPERATURE

500

375

250

125

, DRAIN TO SOURCE VOLTAGE (V)

DS

V

0

VDD= BV

DSS

0.75BV

0.50BV

0.25BV

DRAIN SOURCE VOLTAGE

IG(REF)

20 80

(ACT)

I

G

GATE

SOURCE

VOLTAGE

R

= 50Ω

L

I

(REF) = 2.1mA

G

= 10V

V

GS

0.75BV

DSS

0.50BV

DSS

0.25BV

DSS

t, TIME (µs)

DSS
DSS
DSS

VDD= BV

IG(REF)

I

G

DSS

(ACT)

10

8

6

4

2

0

NOTE: Refer to Harris Applications Notes AN7254 and AN7260.

FIGURE 10. NORMALIZED SWITCHING WAVEFORMSFOR

CONSTANT GATE CURRENT

150

, GATE TO SOURCE VOLTAGE (V)

GS

V

Test Circuits and Waveforms

R

G

V

GS

FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS

4

t

ON

t

d(ON)

t

R

L

+

V

DD

-

DUT

V

DS

0

V

GS

0

90%

10%

r

10%

50%

PULSE WIDTH

t

d(OFF)

90%

t

OFF

50%

t

f

90%

10%