Page 1
DATA SHEET
DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
C to Ku BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
DESCRIPTION
The NE32584C is a Hetero Junction FET that utilizes the
hetero junction to create high mobility electrons. Its excellent
low noise and high associated gain make it suitable for DBS,
TVRO and another commercial systems.
FEATURES
• Super Low Noise Figure & High Associated Gain
NF = 0.45 dB TYP., Ga = 12.5 dB TYP. at f = 12 GHz
• Gate Length : Lg d 0.2 Pm
• Gate Width..: Wg = 200 Pm
ORDERING INFORMATION
SUPPLYING
FORM
NE32584C-SL STICK L = 1.7 mm MIN. D
NE32584C-T1 Tape & reel
1000 pcs./reel
NE32584C-T1A Tape & reel
5000 pcs./reel
L = 1.0 r 0.2 mm
L = 1.0 r 0.2 mm
MARKINGLEAD LENGTHPART NUMBER
NE32584C
PACKAGE DIMENSIONS
(Unit: mm)
1.78 ±0.2
L
D
2
1.78 ±0.2
L
3
1
L
0.5 TYP. 1.7 MAX.0.1
4
L
0.5 TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25
Drain to Source Voltage V
Gate to Source Voltage V
Drain Current I
Gate Current I
Total Power Dissipation P
Channel Temperature T
Storage Temperature T
RECOMMENDED OPERATING CONDITION (TA = 25
CHARACTERISTIC SYMBOL MIN. TYP. MAX. Unit
Drain to Source Voltage V
Drain Current I
Input Power P
Document No. P12275EJ2V0DS00 (2nd edition)
(Previous No. TC-2515)
Date Published February 1997 N
Printed in Japan
C)
qqqq
DS
GS
D
G
tot
ch
stg
DS
D
in
4.0 V
–3.0 V
DSS
I
100
165 mW
150
–65 to +150
mA
A
P
C
q
C
q
C)
qqqq
23V
10 20 mA
0 dBm
1.
2.
3.
4.
Source
Drain
Source
Gate
1994©
Page 2
ELECTRICAL CHARACTERISTICS (TA = 25 qqqqC)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
NE32584C
Gate to Source Leak Current I
Saturated Drain Current I
Gate to Source Cutoff Voltage V
Transconductance g
GSO
DSS
GS(off)
m
0.5 10
P
AVGS = ð3 V
20 60 90 mA VDS = 2 V, VGS = 0 V
ð0.2 ð0.7 ð2.0 V VDS = 2 V, ID = 100 PA
45 60 mS VDS = 2 V, ID = 10 mA
Noise Figure NF 0.45 0.55 dB VDS = 2 V, ID = 10 mA, f = 12 GHz
Associated Gain G
a
11.0 12.5 dB
TYPICAL CHARACTERISTICS (TA = 25 qqqqC)
TOTAL POWER DISSIPATION vs.
250
AMBIENT TEMPERATURE
200
150
100
50
Pout - Total Power Dissipation - mW
0 50 100 150 200 250
T
A - Ambient Temperature - ¡C
100
80
60
40
- Drain Current - mA
D
I
20
0 1.5 3.0
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
V
DS
- Drain to Source Voltage - V
GS
= 0 V
–0.2 V
–0.4 V
–0.6 V
–0.8 V
60
40
20
ID - Drain Current - mA
0
–2.0 –1.0 0
2
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
V
V
GS - Gate to Source Voltage - V
DS = 2 V
MAXIMUM AVAILABLE GAIN, FORWARD
INSERTION GAIN vs. FREQUENCY
24
20
16
2
|S
21s
|
12
- Forward Insertion Gain - dB
2
8
|
21s
MSG. - Maximum Stable Gain - dB
MAG. - Maximum Available Gain - dB
|S
0
f - Frequency - GHz
MSG.
V
DS
= 2 V
ID = 10 mA
MAG.
3020141086321
Page 3
Gain Calculations
NE32584C
21
S
~
MSG. = K =
MAG. = (K r K
~
12
S
~
~
21
S
~
~
12
S
~
~
NOISE FIGURE, ASSOCIATED GAIN vs.
FREQUENCY
2
1)
ð
—
G
a
= S11 • S22 ð S21 • S
'
VDS = 2 V
I
D
1.0
NF - Noise Figure - dB
0.5
NF
0
1301410864202
f - Frequency - GH
Z
1 +
= 10 mA
~'~
2
2~S
ð ~S
ð ~S
~
12
21
S
~~
~
12
2
11
24
20
16
12
- Associated Gain - dB
a
G
8
4
2
22
~
NOISE FIGURE, ASSOCIATED GAIN vs.
DRAIN CURRENT
DS
= 2 V
V
f = 12 GH
2.0
1.5
1.0
NF - Noise Figure - dB
0.5
0
Z
G
a
NF
D
- Drain Current - mA
I
14
13
12
11
10
- Associated Gain - dB
a
G
302010
3
Page 4
NE32584C
S-PARAMETERS
VDS = 2 V, ID = 10 mA
START 2 GHz, STOP 18 GHz, STEP 500 MHz
S11
1.0
5
0
4
3
–0.5
2
–1.0
1
2.00.5
–2.0
Rmax. = 1
Marker
1 : 4 GHz
2 : 8 GHz
3 : 12 GHz
1
4 : 16 GHz
5 : 18 GHz
2
3
4
+45°
0
–45°
Rmax. = 0.25
S12
+90°
+135°
∞
±180°
5
–135°
–90°
±180°
+135°
S21
+90°
+45°
1
–90°
2
3
4
5
R
–45°–135°
max. = 5
0
0
S22
1.0
2.00.5
5
4
3
2
–1.0
1
–2.0–0.5
Rmax. = 1
∞
4
Page 5
S-PARAMETER
MAG. AND ANG.
VDS = 2 V, ID = 10 mA
NE32584C
FREQUENCY S
Z
GH
MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.
11
21
S
12
S
(deg.) (deg.) (deg.) (deg.)
2.0 .983 ð29.7 4.648 148.4 .027 69.0 .532 ð22.6
2.5 .973 ð37.2 4.590 140.5 .033 65.3 .520 ð28.3
3.0 .960 ð43.9 4.543 133.2 .038 60.2 .508 ð33.3
3.5 .943 ð51.0 4.428 125.8 .044 55.7 .491 ð39.3
4.0 .922 ð58.0 4.351 118.2 .049 50.2 .472 ð45.1
4.5 .912 ð64.2 4.296 111.3 .054 45.6 .458 ð51.3
5.0 .890 ð70.4 4.174 104.5 .057 41.6 .442 ð57.3
5.5 .870 ð76.4 4.119 97.4 .062 37.7 .428 ð63.6
6.0 .856 ð81.8 4.005 91.0 .064 32.7 .416 ð70.1
6.5 .840 ð87.6 3.940 84.1 .068 29.7 .403 ð76.0
7.0 .827 ð92.5 3.877 78.1 .069 25.1 .395 ð82.4
7.5 .816 ð97.6 3.805 71.4 .072 21.8 .385 ð88.5
8.0 .801 ð102.3 3.720 65.3 .074 18.4 .376 ð94.0
8.5 .784 ð107.5 3.665 58.8 .075 14.9 .372 ð99.9
9.0 .776 ð112.1 3.604 52.6 .075 11.0 .364 ð105.2
9.5 .752 ð116.4 3.529 47.0 .077 9.0 .359 ð112.7
10.0 .734 ð119.8 3.491 41.5 .078 4.9 .357 ð118.8
10.5 .713 ð124.8 3.435 35.6 .079 2.5 .351 ð126.0
11.0 .702 ð128.1 3.438 29.7 .082 ð1.5 .353 ð133.7
11.5 .685 ð131.7 3.434 24.0 .084 ð5.9 .352 ð140.6
12.0 .670 ð136.1 3.429 17.6 .084 ð8.4 .357 ð147.5
12.5 .649 ð139.7 3.443 11.6 .085 ð12.8 .364 ð155.0
13.0 .632 ð143.8 3.423 5.1 .085 ð17.3 .373 ð161.3
13.5 .607 ð148.2 3.414 ð1.6 .086 ð22.1 .384 ð168.0
14.0 .588 ð151.5 3.416 ð7.5 .086 ð25.3 .393 ð174.7
14.5 .559 ð156.1 3.443 ð14.1 .088 ð28.8 .406 178.1
15.0 .535 ð161.6 3.462 ð20.8 .089 ð34.2 .422 171.4
15.5 .506 ð165.4 3.519 ð27.4 .092 ð39.4 .437 164.2
16.0 .474 ð171.6 3.564 ð34.3 .092 ð43.6 .451 156.3
16.5 .445 ð177.1 3.644 ð41.8 .095 ð52.4 .466 150.0
17.0 .397 175.6 3.678 ð49.8 .097 ð58.3 .483 142.0
17.5 .356 167.7 3.754 ð58.6 .097 ð66.4 .484 134.8
18.0 .299 157.7 3.792 ð67.6 .094 ð74.5 .488 126.3
22
S
5
Page 6
AMP. PARAMETERS
VDS = 2 V, ID = 10 mA
NE32584C
FREQUENCY GUmax. GAmax. | S21 |
Z
GH
2.0 29.58 13.35 ð31.40 .16 .044 14.79 1.44
2.5 27.27 13.24 ð29.58 .19 .044 12.67 1.37
3.0 25.46 13.15 ð28.44 .25 .040 11.02 1.30
3.5 23.65 12.93 ð27.10 .30 .041 9.53 1.20
4.0 22.13 12.77 ð26.26 .37 .042 8.26 1.09
4.5 21.43 12.66 ð25.40 .39 .039 7.74 1.02
5.0 20.16 12.41 ð24.82 .44 .038 6.81 .94
5.5 19.32 12.29 ð24.18 .48 .039 6.14 .88
6.0 18.62 12.05 ð23.83 .52 .036 5.74 .83
6.5 18.00 11.91 ð23.39 .55 .038 5.32 .77
7.0 17.50 11.77 ð23.16 .59 .034 5.00 .74
7.5 17.07 11.61 ð22.83 .60 .037 4.76 .70
8.0 16.53 11.41 ð22.62 .64 .034 4.46 .66
8.5 16.06 11.28 ð22.46 .68 .036 4.13 .65
9.0 15.75 11.14 ð22.44 .72 .035 4.00 .62
9.5 15.18 10.95 ð22.27 .76 .031 3.62 .60
10.0 14.81 10.86 ð22.21 .81 .030 34.849 3.36 .59
10.5 14.38 10.72 ð22.02 .85 .033 34.181 3.09 .57
11.0 14.25 10.73 ð21.68 .84 .033 2.95 .58
11.5 14.04 10.72 ð21.53 .87 .032 2.75 .57
12.0 13.88 10.70 ð21.55 .89 .035 2.59 .59
12.5 13.73 10.74 ð21.41 .91 .034 2.38 .62
13.0 13.56 10.69 ð21.36 .94 .036 31.704 2.22 .65
13.5 13.35 10.66 ð21.34 .98 .037 26.609 1.99 .69
14.0 13.24 10.67 ð21.32 1.00 .033 26.243 1.85 .73
14.5 13.15 15.61 10.74 ð21.11 1.00 .037 27.185 1.63 .78
15.0 13.10 15.71 10.79 ð21.05 1.01 .037 26.453 1.46 .85
15.5 13.14 15.59 10.93 ð20.76 1.00 .036 28.874 1.29 .92
16.0 13.13 15.26 11.04 ð20.77 1.01 .039 28.826 1.11 .99
16.5 13.25 15.65 11.23 ð20.46 1.00 .042 30.042 .96 1.06
17.0 13.21 15.45 11.31 ð20.25 1.00 .044 31.112 .75 1.16
17.5 13.24 14.73 11.49 ð20.28 1.04 .049 26.111 .59 1.16
18.0 13.16 14.20 11.58 ð20.55 1.09 .050 22.789 .41 1.18
dB dB dB dB ns dB dB dB
2
| S12 |
2
K Delay Mason’sU G1 G2
6
Page 7
S-PARAMETER
MAG. AND ANG.
VDS = 2 V, ID = 15 mA
NE32584C
FREQUENCY S
Z
GH
MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.
11
21
S
12
S
(deg.) (deg.) (deg.) (deg.)
2.0 .981 ð30.4 5.265 147.5 .062 71.1 .484 ð21.9
3.0 .955 ð44.8 5.113 132.2 .037 60.9 .460 ð32.3
4.0 .911 ð59.0 4.878 116.9 .047 52.4 .426 ð43.9
5.0 .877 ð71.4 4.647 103.2 .055 43.1 .396 ð55.2
6.0 .839 ð82.9 4.432 89.7 .061 35.6 .371 ð67.4
7.0 .809 ð93.5 4.268 76.8 .067 28.1 .351 ð79.2
8.0 .781 ð103.1 4.085 64.1 .070 22.6 .334 ð90.4
9.0 .752 ð112.7 3.942 51.5 .075 15.5 .325 ð101.0
10.0 .710 ð120.6 3.805 40.6 .079 9.1 .319 ð114.1
11.0 .679 ð128.7 3.736 28.7 .082 2.3 .318 ð129.0
12.0 .646 ð136.2 3.723 16.8 .084 ð5.0 .324 ð142.9
13.0 .608 ð143.9 3.712 4.4 .085 ð13.4 .343 ð156.3
14.0 .562 ð151.5 3.699 ð8.2 .088 ð20.8 .365 ð169.8
15.0 .504 ð160.6 3.738 ð21.4 .091 ð29.5 .395 176.1
16.0 .446 ð170.5 3.845 ð34.9 .093 ð40.4 .429 160.6
17.0 .367 177.0 3.949 ð50.4 .096 ð54.5 .466 145.5
18.0 .273 160.9 4.050 ð68.1 .099 ð72.1 .473 130.2
S-PARAMETER
MAG. AND ANG.
VDS = 2 V, ID = 20 mA
22
S
FREQUENCY S
Z
GH
MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.
11
21
S
12
S
(deg.) (deg.) (deg.) (deg.)
2.0 .979 ð30.6 5.586 147.1 .025 69.2 .456 ð21.4
3.0 .950 ð45.1 5.411 131.7 .035 61.0 .431 ð31.4
4.0 .907 ð59.3 5.136 116.3 .045 52.8 .398 ð42.3
5.0 .869 ð71.7 4.882 102.6 .053 44.7 .368 ð53.4
6.0 .832 ð83.2 4.644 89.2 .059 37.0 .345 ð65.3
7.0 .801 ð93.6 4.459 76.4 .065 30.1 .327 ð76.8
8.0 .772 ð103.1 4.255 63.7 .070 24.7 .312 ð87.4
9.0 .744 ð112.8 4.108 51.3 .074 18.1 .303 ð97.7
10.0 .702 ð120.3 3.958 40.2 .077 11.4 .298 ð110.8
11.0 .671 ð128.3 3.891 28.5 .082 4.8 .297 ð125.7
12.0 .634 ð136.0 3.871 16.7 .086 ð2.3 .304 ð139.0
13.0 .597 ð143.3 3.856 4.3 .087 ð11.1 .325 ð153.3
14.0 .551 ð150.5 3.839 ð8.2 .090 ð18.9 .348 ð166.8
15.0 .495 ð159.3 3.877 ð21.6 .094 ð29.0 .384 179.4
16.0 .434 ð169.2 3.976 ð34.7 .094 ð38.0 .421 163.1
17.0 .357 179.6 4.079 ð50.2 .098 ð53.0 .458 148.0
18.0 .261 164.4 4.195 ð67.7 .098 ð68.9 .469 132.4
22
S
7
Page 8
S-PARAMETER
MAG. AND ANG.
VDS = 1 V, ID = 10 mA
NE32584C
FREQUENCY S
Z
GH
MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.
11
21
S
12
S
(deg.) (deg.) (deg.) (deg.)
2.0 .987 ð29.7 4.627 148.3 .028 70.0 .475 ð22.4
3.0 .964 ð43.9 5.522 133.2 .040 59.5 .451 ð33.0
4.0 .927 ð58.0 4.335 118.2 .051 50.7 .416 ð44.9
5.0 .894 ð70.5 4.158 104.5 .060 41.7 .386 ð57.0
6.0 .860 ð82.0 3.987 91.0 .069 33.0 .361 ð69.9
7.0 .833 ð92.5 3.854 78.2 .073 25.6 .340 ð82.0
8.0 .806 ð102.3 3.701 65.4 .078 17.4 .321 ð94.2
9.0 .780 ð112.3 3.587 52.8 .082 10.4 .310 ð105.3
10.0 .739 ð120.1 3.475 41.6 .086 4.9 .303 ð119.5
11.0 .710 ð128.4 3.417 29.8 .090 ð3.4 .300 ð135.2
12.0 .673 ð136.6 3.415 17.7 .092 ð11.5 .305 ð149.4
13.0 .634 ð144.6 3.410 5.3 .092 ð19.3 .321 ð163.9
14.0 .588 ð152.5 3.399 ð7.4 .095 ð27.4 .342 ð177.3
15.0 .532 ð162.0 3.455 ð20.7 .100 ð39.0 .372 168.5
16.0 .473 ð172.9 3.557 ð34.3 .103 ð50.0 .403 152.2
17.0 .392 173.7 3.667 ð49.9 .107 ð64.7 .435 137.4
18.0 .298 155.7 3.768 ð67.9 .111 ð80.8 .435 121.6
S-PARAMETER
MAG. AND ANG.
VDS = 3 V, ID = 10 mA
22
S
FREQUENCY S
Z
GH
MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.
11
21
S
12
S
(deg.) (deg.) (deg.) (deg.)
2.0 .989 ð29.2 4.146 149.0 .027 69.6 .548 ð21.8
3.0 .967 ð43.1 4.067 134.1 .038 59.5 .525 ð32.5
4.0 .934 ð57.2 3.923 119.1 .048 50.5 .492 ð44.2
5.0 .901 ð69.6 3.779 105.5 .055 41.0 .464 ð55.9
6.0 .872 ð81.0 3.645 92.0 .062 34.5 .439 ð68.9
7.0 .847 ð91.7 3.542 79.1 .066 25.9 .420 ð81.0
8.0 .823 ð101.6 3.412 66.2 .070 19.2 .400 ð92.8
9.0 .798 ð111.6 3.319 53.5 .071 12.8 .391 ð104.0
10.0 .757 ð119.4 3.226 42.4 .075 7.3 .382 ð117.6
11.0 .730 ð127.7 3.183 30.3 .077 0.3 .376 ð132.8
12.0 .698 ð135.9 3.188 18.2 .081 ð6.0 .379 ð146.0
13.0 .661 ð144.1 3.192 5.7 .081 ð13.0 .395 ð159.7
14.0 .617 ð152.5 3.185 ð7.1 .082 ð20.4 .415 ð172.7
15.0 .561 ð162.2 3.239 ð20.4 .084 ð29.2 .440 173.9
16.0 .503 ð173.3 3.353 ð33.9 .087 ð38.8 .474 159.0
17.0 .428 172.5 3.459 ð49.6 .091 ð52.5 .506 145.2
18.0 .332 153.5 3.579 ð67.5 .092 ð68.5 .515 130.6
22
S
8
Page 9
NOISE PARAMETER
<TYPICAL CONSTANT NOISE FIGURE CIRCLE>
0.6
NE32584C
1
2
VDS = 2 V
I
D
= 10 mA
f = 12 GH
Z
0.2
Γ
opt
*
0.7 dB
0
0.2
0.8 dB
0.6 1.0 2.0
–0.2
–0.6
–1
<NOISE PARAMETER>
VDS = 2 V, ID = 10 mA
opt.
Freq.
(GHz)
NF
(dB)
min.
G
(dB)
a
MAG. ANG. (deg.)
2.0 0.29 20.0 0.86 22 0.27
4.0 0.30 18.3 0.76 45 0.25
6.0 0.33 16.5 0.69 70 0.18
8.0 0.36 15.0 0.63 96 0.11
10.0 0.40 13.6 0.59 122 0.08
12.0 0.45 12.5 0.54 147 0.04
14.0 0.54 12.0 0.48 171 0.04
16.0 0.68 11.8 0.40 ð165 0.05
18.0 0.85 11.5 0.31 ð144 0.06
*
5
∞
–5
–2
Rn/50
9
Page 10
NE32584C
RECOMMENDED SOLDERING CONDITIONS
The following conditions (see table below) must be met when soldering this product.
Please consult with our sales offices in case other soldering process is used, or in case soldering is done under
different conditions.
<TYPES OF SURFACE MOUNT DEVICE>
For more details, refer to our document “SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL”
(C10535E).
[NE32584C]
Soldering process Soldering conditions Symbol
Infrared ray reflow Peak package’s surface temperature: 230 °C or below,
Reflow time: 30 seconds or below (210 °C or higher),
Number of reflow process: 1, Exposure limit*: None
Partial heating method Terminal temperature: 230 °C or below,
Flow time: 10 seconds or below,
Exposure limit*: None
Exposure limit before soldering after dry-pack package is opened.
*
Storage conditions: 25 °C and relative humidity at 65 % or less.
Do not apply more than a single process at once, except for “Partial heating method”.
Note
PRECAUTION
Avoid high static voltage and electric fields, because this device is Hetero Junction field effect
transistor with shottky barrier gate.
Caution
The Great Care must be taken in dealing with the devices in this guide.
The reason is that the material of the devices is GaAs (Gallium Arsenide), which is
designated as harmful substance according to the law concerned.
Keep the law concerned and so on, especially in case of removal.
IR30-00
10
Page 11
[MEMO]
NE32584C
11
Page 12
NE32584C
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96. 5
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