Datasheet NE32484A, NE32484A-T1, NE32484A-SL, NE32484A-T1A Datasheet (NEC)

DATA SHEET

HETERO JUNCTION FIELD EFFECT TRANSISTOR

NE32484A

C to Ku BAND SUPER LOW NOISE AMPLIFIER

N-CHANNEL HJ-FET

DESCRIPTION

The NE32484A is a Hetero Junction FET that utilizes the
hetero junction to create high mobility electrons. Its excellent
low noise and high associated gain make it suitable for DBS,
TVRO and another commercial systems.

FEATURES

• Super Low Noise Figure & High Associated Gain

NF = 0.6 dB TYP., Ga = 11.0 dB TYP. at f = 12 GHz

• Gate Length : L

• Gate Width : Wg = 200 µm

g ≤ 0.25

µ

m

ORDERING INFORMATION

PART NUMBER

NE32484A-SL STICK L = 1.7 mm MIN.
NE32484A-T1 Tape & reel L = 1.0 ± 0.2 mm

NE32484A-T1A Tape & reel L = 1.0 ± 0.2 mm

SUPPLYING
FORM

1000 pcs./reel T

5000 pcs./reel

LEAD LENGTH

MARKING

PACKAGE DIMENSIONS

(Unit: mm)

1.78 ±0.2

L

T

2

1.78 ±0.2

L

3

1

L

0.5 TYP. 1.7 MAX.0.1

4

L

0.5 TYP.

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Drain to Source Voltage VDS 4.0 V
Gate to Source Voltage VGS –3.0 V
Drain Current I
Gate Current IG 100
Total Power Dissipation Ptot 165 mW
Channel Temperature T
Storage Temperature Tstg –65 to +150 ˚ C

RECOMMENDED OPERATING CONDITION (TA = 25 ˚C)

CHARACTERISTIC SYMBOL MIN. TYP. MAX. Unit
Drain to Source Voltage VDS 23V
Drain Current ID 10 20 mA
Input Power Pin 0 dBm

Document No. P11785EJ3V0DS00 (3rd edition)
(Previous No. TC-2316)
Date Published July 1996 P
Printed in Japan

D IDSS mA

µ

ch 150 ˚ C

Source

1.
Drain

2.
Source

3.
Gate

4.

A

©

1991

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS

Gate to Source Leak Current IGSO 0.5 10

µ

AVGS = –3 V
Saturated Drain Current IDSS 15 40 70 mA VDS = 2 V, VGS = 0 V
Gate to Source Cutoff Voltage VGS(off) –0.2 –0.8 –2.0 V VDS = 2 V, ID = 100 µA
Transconductance gm 45 60 mS VDS = 2 V, ID = 10 mA
Noise Figure NF 0.6 0.7 dB VDS = 2 V, ID = 10 mA,
Associated Gain Ga 10.0 11.0 dB

f = 12 GHz

TYPICAL CHARACTERISTICS (TA = 25 ˚C)

NE32484A

TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE

250

200

150

100

50

Ptot - Total Power Dissipation - mW

0 50 100 150 200 250

A - Ambient Temperature - ˚C

T

DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE

50

DS = 2 V

V

40

30

20

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

50

40

30

20

ID - Drain Current - mA

10

0

15

DS - Drain to Source Voltage - V

V

234

MAXIMUM AVAILABLE GAIN, FORWARD
INSERTION GAIN vs. FREQUENCY

24

20

MSG.

16

2

|S21

S|

12

V

GS

= 0 V

–0.2 V

–0.4 V

–0.6 V

DS = 2 V

V
ID = 10 mA

MAG.

ID - Drain Current - mA

10

0
–2.0

GS - Gate to Source Voltage - V

V

Gain Calculations

|S |

MSG.=

MAG

21
12

|S |

S

||

21

=±−

KK.

(

12

S

||

2

–1.0 0

2

1

)

- Forward Insertion Gain - dB

2

21s|

MSG. - Maximum Stable Gain - dB

MAG. - Maximum Available Gain - dB

|S

2112

+− −1 | | | | | |

K

∆

∆

=

=⋅−⋅SS SS

2

SS

||||

11 22 21 12

8

4

1

SS

12 21

2 4 6 8 10 14 20 30

2

22

f - Frequency - GHz

NOISE FIGURE, ASSOCIATED GAIN vs.
FREQUENCY

5

4

Ga

3

DS

= 2 V

V
ID = 10 mA

24

20

16

NE32484A

NOISE FIGURE, ASSOCIATED GAIN vs. 
RATIO OF DRAIN CURRENT TO ZERO-GATE 
VOLTAGE CURRENT

3

2

V

DS

= 2 V

f = 12 GHz

Ga

15

10

2

NF - Noise Figure - dB

1

NF

0

1246 30

810 14 20

f - Frequency - GHz

12

NF - Noise Figure - dB

Ga - Associated Gain - dB

8

4

IDS/I

1

NF

5

0

1

DSS

- Ratio of Drain Current to Zero-Gate Voltage Current - %

46810 20 4060

2 100

0

Ga - Associated Gain - dB

3

S-Parameters

VDS = 2 V, ID = 10 mA
START 500 MHz, STOP 18 GHz, STEP 500 MHz

S

11

1.0

S

12

+90˚

NE32484A

Marker



1:

4 GHz

2:

8 GHz

3:

12 GHz

4:

16 GHz

5:

18 GHz

±180˚

0.5

5

0

–0.5

+135˚

4
3

2

–1.0

S

21

+90˚

1

2.0

2.01.00.5

–2.0

1

Rmax. = 1

+45˚

2

3

∞

±180˚

0

+135˚

21

–135˚

–90˚

S

22

1.0

0.5

5

0

4

3

3

4

5

Rmax. = 0.25

2.01.00.5

+45˚

0

–45˚

2.0

∞

4

–135˚

–90˚

5

–45˚

Rmax. = 5

–0.5

2

–1.0

1

–2.0

Rmax. = 1

4

S-Parameters MAG. AND ANG.

VDS = 2 V, ID = 10 mA

NE32484A

FREQUENCY S

MHz MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.

500 .999 –8.3 4.699 171.5 .009 81.1 .667 –6.2
1 000 .990 –16.6 4.678 162.9 .019 78.1 .663 –12.3
1 500 .976 –24.9 4.611 154.1 .027 73.5 .654 –18.2
2 000 .952 –32.7 4.508 146.0 .035 67.5 .641 –24.2
2 500 .934 –40.5 4.424 138.0 .043 61.4 .626 –29.7
3 000 .908 –48.2 4.328 130.0 .051 58.8 .612 –35.8
3 500 .884 –55.8 4.222 122.2 .056 53.8 .598 –41.2
4 000 .858 –63.1 4.127 114.7 .062 48.5 .576 –47.1
4 500 .830 –70.5 4.022 107.2 .067 44.5 .559 –52.9
5 000 .802 –77.5 3.906 99.9 .072 40.4 .538 –58.7
5 500 .775 –84.5 3.793 92.7 .075 36.3 .516 –64.7
6 000 .746 –91.0 3.669 85.8 .078 32.6 .497 –70.9
6 500 .725 –97.4 3.552 79.0 .081 29.6 .481 –76.7
7 000 .702 –103.5 3.426 72.7 .083 27.2 .470 –82.9
7 500 .681 –109.2 3.324 66.3 .085 24.9 .460 –88.3
8 000 .659 –114.3 3.223 60.1 .088 21.9 .454 –93.6
8 500 .645 –119.4 3.126 54.4 .090 19.9 .450 –99.5
9 000 .625 –124.2 3.050 48.4 .092 17.3 .450 –104.7
9 500 .609 –128.9 2.984 43.1 .094 15.6 .449 –109.8

10 000 .592 –134.2 2.921 37.1 .097 14.1 .441 –116.2
10 500 .574 –139.4 2.868 31.5 .098 11.3 .433 –121.4
11 000 .556 –144.6 2.812 25.7 .100 9.6 .429 –128.7
11 500 .539 –149.9 2.759 20.0 .101 6.7 .424 –134.1
12 000 .526 –155.7 2.705 14.5 .102 6.1 .423 –139.5
12 500 .511 –161.1 2.645 8.3 .105 4.1 .421 –146.5
13 000 .499 –166.2 2.595 3.1 .107 1.9 .429 –153.1
13 500 .487 –171.1 2.543 –2.3 .110 –.5 .439 –157.9
14 000 .476 –175.9 2.496 –8.2 .113 –1.6 .448 –163.5
14 500 .463 179.9 2.464 –13.6 .115 –4.0 .460 –168.9
15 000 .449 175.4 2.441 –19.5 .120 –7.4 .468 –174.1
15 500 .433 169.9 2.408 –24.6 .122 –9.9 .484 –179.4
16 000 .420 164.6 2.383 –30.5 .125 –13.0 .486 175.2
16 500 .404 158.5 2.377 –36.4 .130 –16.5 .489 170.6
17 000 .385 151.0 2.365 –42.3 .134 –19.2 .499 164.2
17 500 .373 143.6 2.350 –48.6 .135 –22.7 .507 158.1
18 000 .357 135.1 2.321 –55.0 .143 –26.3 .518 152.3

11 S21 S12 S22

(deg.) (deg.) (deg.) (deg.)

5

AMP. Parameters

VDS = 2 V, ID = 10 mA

NE32484A

FREQUENCY GUmax. GAmax. |S

21|

2

|S12|

2

K Delay Mason’s U G1 G2

MHz dB dB dB dB ns dB dB dB

500 41.44 13.44 –40.86 .07 .048 35.043 25.44 2.56
1 000 32.97 13.40 –34.30 .11 .048 38.352 17.05 2.52
1 500 28.97 13.28 –31.48 .16 .048 13.27 2.42
2 000 25.67 13.08 –29.02 .25 .045 31.191 10.30 2.30
2 500 24.04 12.92 –27.43 .30 .044 28.650 8.97 2.16
3 000 22.31 12.73 –25.82 .33 .044 36.156 7.55 2.04
3 500 21.03 12.51 –24.99 .39 .044 33.054 6.60 1.92
4 000 19.86 12.31 –24.09 .44 .042 29.569 5.80 1.75
4 500 18.79 12.09 –23.41 .49 .041 29.880 5.07 1.63
5 000 17.79 11.83 –22.84 .54 .041 28.912 4.47 1.48
5 500 16.90 11.58 –22.48 .60 .040 27.197 3.98 1.34
6 000 16.06 11.29 –22.17 .66 .038 25.792 3.54 1.23
6 500 15.39 11.01 –21.78 .70 .038 26.436 3.24 1.14
7 000 14.73 10.70 –21.64 .75 .035 26.491 2.94 1.09
7 500 14.17 10.43 –21.36 .79 .036 27.296 2.70 1.03
8 000 13.64 10.17 –21.11 .83 .034 25.875 2.48 1.00
8 500 13.22 9.90 –20.94 .86 .031 27.068 2.34 .98
9 000 12.82 9.68 –20.77 .89 .033 26.311 2.15 .98
9 500 12.48 9.49 –20.57 .91 .030 27.718 2.01 .98

10 000 12.12 9.31 –20.30 .93 .033 30.819 1.87 .94
10 500 11.79 9.15 –20.17 .97 .031 26.188 1.73 .90
11 000 11.47 8.98 –20.02 1.00 .032 25.806 1.61 .88
11 500 11.17 13.30 8.81 –19.88 1.03 .032 23.528 1.49 .86
12 000 10.91 12.82 8.64 –19.81 1.05 .030 22.859 1.40 .86
12 500 10.61 12.38 8.45 –19.60 1.07 .034 21.908 1.31 .85
13 000 10.41 12.28 8.28 –19.39 1.07 .029 22.287 1.24 .89
13 500 10.21 12.13 8.11 –19.14 1.06 .030 22.459 1.18 .93
14 000 10.03 12.01 7.94 –18.96 1.06 .033 22.098 1.11 .97
14 500 9.91 12.01 7.83 –18.76 1.04 .030 22.242 1.05 1.03
15 000 9.80 12.12 7.75 –18.39 1.02 .033 22.991 .98 1.07
15 500 9.69 12.20 7.63 –18.26 1.01 .028 22.729 .90 1.16
16 000 9.56 12.02 7.54 –18.06 1.02 .033 21.370 .84 1.17
16 500 9.48 12.23 7.52 –17.75 1.00 .033 21.084 .77 1.19
17 000 9.42 7.48 –17.45 .98 .033 20.924 .70 1.24
17 500 9.36 7.42 –17.38 .98 .035 19.871 .65 1.29
18 000 9.26 7.31 –16.92 .95 .036 20.113 .59 1.36

6

Noise Parameters

1.0

0.5

0

–0.5

–1.0

2.0

∞

–2.0

f = 12 GHz

Γopt

∗

1 dB

1.5 dB

2.0 dB

1.0

VDS = 2 V
I

D

= 10 mA

1.0

0.5

0

–0.5

–1.0

2.0

∞

–2.0

START 2 GHz STOP 18 GHz STEP 2 GHz

1.0

VDS = 2 V
I

D

= 10 mA

2

4

6

8

10

12

14

16

18

<TYPICAL CONSTANT NOISE FIGURE CIRCLE> <Γopt. vs. frequency>

NE32484A

<Noise Parameters>
VDS = 2 V, ID = 10 mA

MAG.

Γopt.

ANG. (deg.)

Rn/50

Freq. NF

(GHz) (dB) (dB)

2.0 0.31 18.5 0.85 18 0.39

4.0 0.33 16.1 0.82 45 0.32

6.0 0.38 14.2 0.77 71 0.27

8.0 0.43 12.5 0.70 96 0.20

10.0 0.51 11.7 0.64 118 0.13

12.0 0.60 11.0 0.58 152 0.08

14.0 0.74 10.1 0.54 175 0.08

16.0 0.90 9.4 0.51 –161 0.06

18.0 1.10 9.0 0.48 –138 0.06

min.

Ga

7

NE32484A

RECOMMENDED SOLDERING CONDITIONS

The following conditions (see table below) must be met when soldering this product.
Please consult with our sales offices in case other soldering process is used, or in case soldering is done under

different conditions.

<TYPES OF SURFACE MOUNT DEVICE>

For more details, refer to our document “SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL”

(C10535EJ7V0IF00).

Soldering process Soldering conditions Symbol

Infrared ray reflow Peak package’s surface temperature: 230 ˚C or below, IR30-00

Reflow time: 30 seconds or below (210 ˚C or higher),
Number of reflow process: 1, Exposure limit

Partial heating method Terminal temperature: 230 ˚C or below,

Flow time: 10 seconds or below,
Exposure limit

Note Exposure limit before soldering after dry-pack package is opened.

Storage conditions: 25 ˚C and relative humidity at 65 % or less.

Note

: None

Note

: None

Caution Do not apply more than a single process at once, except for “Partial heating method”.

PRECAUTION Avoid high static voltage and electric fields, because this device is Hetero Junction field effect

transistor with shottky barrier gate.

Caution

The Great Care must be taken in dealing with the devices in this guide.
The reason is that the material of the devices is GaAs (Gallium Arsenide), which is
designated as harmful substance according to the law concerned.
Keep the Japanese law concerned and so on, especially in case of removal.

8

[MEMO]

NE32484A

9

[MEMO]

NE32484A

10

[MEMO]

NE32484A

11

NE32484A

No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.

Standard: Computers, office equipment, communications equipment, test and measurement equipment,

audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots

Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster

systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)

Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.

M4 96.5

2