Page 1
DATA SHEET
HETERO JUNCTION FIELDEFFECT TRANSISTOR
NE321000
C to Ka BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET CHIP
DESCRIPTION
The NE321000 is Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its
excellent low noise and associated gain make it suitable for DBS and another commercial systems, industrial and
space applications.
FEATURES
• Super Low Noise Figure & High Associated Gain
NF = 0.35 dB TYP. Ga = 13.5 dB TYP. @ f = 12 GHz
• Gate Length: Lg ≤ 0.20 µm
• Gate Width : Wg = 160 µm
ORDERING INFORMATION (PLAN)
Part Number Quality Grade
NE321000 Standard (Grade D)
Remark
To order evaluation samples, please contact your local NEC sales office. (Part number for sample order:
NE321000)
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter Symbol Ratings Unit
Drain to Source Voltage V
Gate to Source Voltage V
Drain Current I
Gate Current I
Total Power Dissipat i on
Channel Temperature T
Storage Temperature T
DS
GS
D
G
Note
tot
P
ch
stg
4.0 V
–3.0 V
DSS
I
100
200 mW
175 °C
–65 to +175 °C
mA
µ
A
Chip mounted on an Alumina heatsink (size: 3 × 3 × 0.6 t)
Note
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14270EJ2V0DS00 (2nd edition)
Date Published November 1999 N CP(K)
Printed in Japan
The mark shows major revised points.
1999©
Page 2
RECOMMENDED OPERATING CONDITIONS (TA = +25 °C)
Parameter Symbol MIN. TYP. MAX. Unit
NE321000
Drain to Source Voltage V
Drain Current I
Input Power P
DS
D
in
123V
51015mA
––0dBm
ELECTRICAL CHARACTERISTICS (TA = +25 °C)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
Gate to Source Leak Current I
Saturated Drain Current I
Gate to Source Cut Off Voltage V
Transconductance g
Noise Figure NF – 0.35 0.45 dB
NF Associated Gain G
Remark
RF performance is determined by packaging and testing 10 chips per wafer.
Wafer rejection criteria for standard devices is 2 rejects per 10 samples.
GSO
DSS
GS(off)
m
a
VGS = –3 V – 0.5 10
VDS = 2 V, VGS = 0 V 154070mA
VDS = 2 V, IDS = 100 µA –0.2 –0.7 –2.0 V
VDS = 2 V, IDS = 10 mA 40 55 – mS
VDS = 2 V, IDS = 10 mA
f = 12 GHz
12.0 13.5 – dB
µ
A
2
Data Sheet P14270EJ2V0DS00
Page 3
TYPICAL CHARACTERISTICS (TA = +25 °C)
NE321000
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
250
200
(mW)
tot
150
100
50
Total Power Dissipation P
0 50 100 150 200 250
A
Ambient Temperature T
(°C)
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
VDS = 2 V
60
(mA)
D
40
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
80
(mA)
D
60
40
Drain Current I
20
0 2.01.0
Drain to Source Voltage V
MAXIMUM AVAILABLE GAIN, FORWARD
INSERTION GAIN vs. FREQUENCY
24
(dB)
2
|
21s
20
MSG.
16
VGS = 0 V
–0.2 V
–0.4 V
–0.6 V
DS
(V)
VDS = 2 V
D
= 10 mA
I
20
Drain Current I
0
–2.0 –1.0 0
GS
Gate to Source Voltage V
(V)
12
8
Maximum Stable Gain MSG. (dB)
Maximum Available Gain MAG. (dB)
Forward Insertion Gain |S
4
13024 206 8 10 14
2
|S
21S
|
Frequency f (GHz)
Data Sheet P14270EJ2V0DS00
3
Page 4
GAIN CALCULATIONS
NE321000
S21
MSG. =
S
S21
MAG. =
S
1.0
Noise Figure NF (dB)
0.5
12
k ±
12
NOISE FIGURE, NF ASSOCIATED GAIN vs.
FREQUENCY
0
1302
k2 – 1 = S11·S22 – S21·S12
a
G
NF
4206 8 10 14
Frequency f (GHz)
1 + | |2 – |S11 |2 – |S22|
K =
2 |S
∆
12| |S21|
∆
24
VDS = 2 V
D
= 10 mA
I
20
(dB)
a
16
12
NF Associated Gain G
8
4
2
NOISE FIGURE, NF ASSOCIATED GAIN vs.
DRAIN CURRENT
VDS = 2 V
f = 12 GHz
2.0
1.5
Noise Figure NF (dB)
1.0
0.5
a
G
NF
Drain Current ID (mA)
15
14
(dB)
a
13
12
11
NF Associated Gain G
3020100
4
Data Sheet P14270EJ2V0DS00
Page 5
S-PARAMETERS
MAG. AND ANG.
VDS = 2 V, ID = 10 mA
NE321000
FREQUENCY S
11
21
S
12
S
22
S
GHz MAG.ANG.MAG.ANG.MAG.ANG.MAG.ANG.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
10.0
14.8
19.9
25.6
30.1
34.4
39.1
43.1
47.2
52.0
55.5
58.6
62.1
65.0
68.3
71.2
73.2
75.2
77.4
80.9
82.7
84.1
87.9
88.3
89.2
91.6
93.5
95.2
97.5
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
21.0
22.0
23.0
24.0
25.0
26.0
27.0
28.0
29.0
30.0
0.998
0.987
0.981
0.970
0.962
0.952
0.941
0.927
0.912
0.898
0.882
0.868
0.855
0.843
0.827
0.807
0.796
0.793
0.788
0.782
0.783
0.785
0.778
0.766
0.757
0.753
0.755
0.748
0.743
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
101.2
−
103.8
−
106.4
−
109.9
−
113.4
−
116.0
−
118.1
−
119.9
−
121.6
−
124.2
−
126.2
13.2
19.3
25.7
32.7
38.6
44.4
50.1
55.6
61.5
66.9
71.6
75.9
80.2
84.2
88.5
92.6
95.3
98.0
4.72
4.70
4.62
4.50
4.45
4.37
4.28
4.17
4.03
3.90
3.79
3.66
3.54
3.42
3.30
3.16
3.05
2.97
2.89
2.79
2.70
2.62
2.53
2.46
2.40
2.33
2.29
2.23
2.16
170.2
165.6
160.5
155.7
151.6
147.4
143.5
139.7
135.6
131.5
128.0
124.9
121.9
119.0
115.8
112.9
110.8
108.7
106.2
104.1
101.9
99.5
97.4
95.8
93.8
92.5
90.6
88.4
86.8
0.020
0.030
0.040
0.050
0.059
0.067
0.074
0.081
0.087
0.094
0.100
0.104
0.108
0.111
0.115
0.116
0.117
0.120
0.123
0.125
0.128
0.132
0.135
0.135
0.135
0.133
0.136
0.135
0.136
81.3
77.3
73.2
69.4
65.3
62.2
58.6
55.2
51.5
48.0
44.9
42.0
39.0
36.2
33.5
30.5
28.5
27.9
26.5
24.9
23.3
20.7
18.8
16.8
15.3
14.3
14.0
12.6
11.3
0.602
0.599
0.593
0.588
0.583
0.574
0.567
0.564
0.552
0.541
0.536
0.526
0.518
0.509
0.501
0.494
0.488
0.489
0.487
0.484
0.486
0.477
0.474
0.481
0.469
0.463
0.484
0.481
0.475
Data Sheet P14270EJ2V0DS00
5
Page 6
NOISE PARAMETERS
VDS = 2 V, ID = 10 mA
Freq. (GHz) NF
2.0 0.21 19.5 0.94 3.7 0.31
4.0 0.22 17.6 0.87 8.2 0.31
6.0 0.24 15.9 0.82 13.3 0.32
8.0 0.26 14.6 0.77 18.8 0.32
10.0 0. 28 13.5 0.73 24.8 0.32
12.0 0. 31 12.7 0.69 31.4 0.31
14.0 0. 38 12.1 0.67 38.4 0.31
16.0 0. 45 11.6 0.64 45.9 0.30
18.0 0. 52 11.3 0.63 53.9 0.29
20.0 0. 59 11.2 0.62 62.4 0.28
22.0 0. 66 11.1 0.61 71.4 0.27
24.0 0. 72 11.2 0.62 80.8 0.25
26.0 0. 79 11.2 0.63 90.8 0.23
min
. (dB) Ga (dB)
Γ
opt
MAG. ANG. (deg.)
NE321000
Rn/50
6
Data Sheet P14270EJ2V0DS00
Page 7
NE321000
CHIP DIMENSIONS (Unit:
38 56 27 58
µµµµ
m)
Drain
Source
Gate
Source
224 3838
300
36 69 63 38
Thickness = 140 m
: BONDING AREA
µ
61 56 38
300
26
Data Sheet P14270EJ2V0DS00
7
Page 8
NE321000
CHIP HANDLING
DIE ATTACHMENT
Die attach operation can be accomplished with Au-Sn (within a 300 °C − 10 s) performs in a forming gas
environment.
Epoxy die attach is not recommend.
BONDING
Bonding wires should be minimum length, semi hard gold wire (3 to 8 % elongation) 20 microns in diameter.
Bonding should be performed with a wedge tip that has a taper of approximately 15 %. Bonding time should be
kept to minimum.
As a general rule, the bonding operation should be kept within a 280 °C, 2 minutes for all bonding wires.
If longer periods are required, the temperature should be lowered.
PRECAUTION
The user must operate in a clean, dry environment. The chip channel is glassivated for mechanical protection
only and does not preclude the necessity of a clean environment.
The bonding equipment should be periodically checked for sources of surge voltage and should be properly
grounded at all times. In fact, all test and handling equipment should be grounded to minimize the possibilities of
static discharge.
Avoid high static voltage and electric fields, because this device is Hetero Junction field effect transistor with
shottky barrier gate.
8
Data Sheet P14270EJ2V0DS00
Page 9
[MEMO]
NE321000
Data Sheet P14270EJ2V0DS00
9
Page 10
[MEMO]
NE321000
10
Data Sheet P14270EJ2V0DS00
Page 11
[MEMO]
NE321000
Data Sheet P14270EJ2V0DS00
11
Page 12
NE321000
CAUTION
The Great Care must be taken in dealing with the devices in this guide.
The reason is that the material of the devices is GaAs (Gallium Arsenide), which is
designated as harmful substance according to the law concerned.
Keep the law concerned and so on, especially in case of removal.
• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.
• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
• NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
M7 98. 8
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