Datasheet NDS8958 Datasheet (Fairchild Semiconductor)

NDS8958

Dual N & P-Channel Enhancement Mode Field Effect Transistor

General Description Features

July 1996

These dual N- and P-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance
and provide superior switching performance. These devices
are particularly suited for low voltage applications such as
notebook computer power management and other battery
powered circuits where fast switching, low in-line power loss,
and resistance to transients are needed.

N-Channel 5.3A, 30V, R
P-Channel -4.0A, -30V, R

High density cell design or extremely low R

=0.035Ω @ V

DS(ON)

=0.065Ω @ V

DS(ON)

GS

GS

DS(ON)

=10V.

=-10V.

.

High power and current handling capability in a widely used
surface mount package.

Dual (N & P-Channel) MOSFET in surface mount package.

________________________________________________________________________________

5

6

7

8

4

3

2

1

Absolute Maximum Ratings T

= 25°C unless otherwise noted

A

Symbol Parameter N-Channel P-Channel Units

V

DSS

V

GSS

I

D

Drain-Source Voltage 30 -30 V

Gate-Source Voltage 20 -20 V

Drain Current - Continuous (Note 1a) 5.3 -4 A

- Pulsed 20 -15

P

D

Power Dissipation for Dual Operation 2 W

Power Dissipation for Single Operation (Note 1a) 1.6
(Note 1b) 1
(Note 1c) 0.9

TJ,T

Operating and Storage Temperature Range -55 to 150 °C

STG

THERMAL CHARACTERISTICS

R

θ

R

θ

Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W

JA

Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W

JC

NDS8958 Rev. C

Electrical Characteristics (T

= 25°C unless otherwise noted)

A

Symbol Parameter Conditions Type Min Typ Max Units
OFF CHARACTERISTICS

BV

I

DSS

I

GSSF

I

GSSR

DSS

Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA N-Ch 30 V

VGS = 0 V, ID = -250 µA

Zero Gate Voltage Drain Current VDS = 24 V, V

VDS = -24 V, V

= 0 V N-Ch 1 µA

GS

TJ = 55°C

= 0 V P-Ch -1 µA

GS

TJ = 55°C

P-Ch -30 V

10 µA

-10 µA
Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V All 100 nA
Gate - Body Leakage, Reverse

VGS = -20 V, VDS= 0 V

All -100 nA

ON CHARACTERISTICS (Note 2)

V

R

GS(th)

DS(ON)

Gate Threshold Voltage

Static Drain-Source On-Resistance

VDS = VGS, ID = 250 µA

TJ = 125°C

VDS = VGS, ID = -250 µA

TJ = 125°C

VGS = 10 V, ID = 5.3 A

N-Ch 1 1.6 2.8 V

0.7 1.2 2.2

P-Ch -1 -1.6 -2.8

-0.7 -1.2 -2.2

N-Ch 0.033 0.035

TJ = 125°C 0.046 0.063

VGS = 4.5 V, ID = 4.4 A

0.046 0.05

VGS = -10 V, ID = -4.0 A P-Ch 0.052 0.065

TJ = 125°C

0.075 0.13

VGS = -4.5 V, ID = -3.3 A 0.085 0.1

I

D(on)

On-State Drain Current

VGS = 10 V, VDS = 5 V

N-Ch 20 A

VGS = -10 V, VDS = -5 V P-Ch -15

g

FS

Forward Transconductance

VDS = 10 V, ID = 5.3 A

N-Ch 10.5 S

VDS = -10 V, ID = -4.0 A P-Ch 7

DYNAMIC CHARACTERISTICS

C

iss

Input Capacitance N-Channel

VDS = 15 V, VGS = 0 V,
f = 1.0 MHz

C

oss

C

rss

Output Capacitance N-Ch 370 pF

P-Channel

Reverse Transfer Capacitance N-Ch 250 pF

VDS = -15 V, VGS = 0 V,
f = 1.0 MHz

N-Ch 720 pF
P-Ch 690

P-Ch 430

P-Ch 160

Ω

NDS8958 Rev. C

Electrical Characteristics (T

= 25°C unless otherwise noted)

A

Symbol Parameter Conditions Type Min Typ Max Units
SWITCHING CHARACTERISTICS (Note 2)

t

t

t

t

D(on)

r

D(off)

f

Turn - On Delay Time N-Channel

VDD = 10 V, ID = 1 A,
V

= 10 V, R

Turn - On Rise Time N-Ch 13 30 ns

GEN

GEN

= 6 Ω

P-Channel

Turn - Off Delay Time N-Ch 29 50 ns

VDD = -10 V, ID = -1 A,
V

= -10 V, R

GEN

GEN

= 6 Ω

N-Ch 12 20 ns
P-Ch 9 20

P-Ch 20 25

P-Ch 40 50

Turn - Off Fall Time N-Ch 10 20 ns

P-Ch 19 40

Q

g

Q

gs

Q

gd

Total Gate Charge N-Channel

VDS = 10 V,
ID = 5.3 A, VGS = 10 V

N-Ch 19 30 nC
P-Ch 21 30

Gate-Source Charge N-Ch 2.2

P-Channel

Gate-Drain Charge N-Ch 5.5

VDS = -10 V,
ID = -4.0 A, VGS = -10 V

P-Ch 3.1

P-Ch 5.1

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

I

S

Maximum Continuous Drain-Source Diode Forward Current N-Ch 1.3 A

P-Ch -1.3

V

SD

t

rr

Notes:

1. R

P

design while R

D

Typical R

Drain-Source Diode Forward
Voltage

VGS = 0 V, IS = 1.3 A
VGS = 0 V, IS = -1.3 A

(Note 2) N-Ch 0.9 1.2 V

(Note 2)

P-Ch -0.85 -1.2

Reverse Recovery Time VGS = 0 V, IF = 1.3 A, dIF/dt = 100 A/µs N-Ch 100 ns

VGS = 0 V, IF = -1.3 A, dIF/dt = 100 A/µs

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R

JA

θ

(t)

is determined by the user's board design.

CA

θ

T

=

R

θ

T

J−TA

θJA

JA

a. 78oC/W when mounted on a 0.5 in2 pad of 2oz copper.

b. 125oC/W when mounted on a 0.02 in2 pad of 2oz copper.

c. 135oC/W when mounted on a 0.003 in2 pad of 2oz copper.

1a

J−TA

=

(t)

R

θ

JC

for single device operation using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:

2

= I

(t) ×R

DS (ON ) T

D

+R

(t)

θ

CA

J

1b 1c

P-Ch 100

is guaranteed by

JC

θ

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

NDS8958 Rev. C

Typical Electrical Characteristics: N-Channel

25

V =10V

GS

20

15

6.0

5.0

4.5

4.0

2.5

3

2

V = 3.0V

GS

3.5

4.0

3.5

10

5

D

I , DRAIN-SOURCE CURRENT (A)

0

0 0.5 1 1.5 2 2.5 3

V , DRAIN-SOURCE VOLTAGE (V)

DS

3.0

1.5

DS(ON)

R , NORMALIZED

1

DRAIN-SOURCE ON-RESISTANCE

0.5
0 5 10 15 20 25

I , DRAIN CURRENT (A)

D

Figure 1. N-Channel On-Region Characteristic. Figure 2. N-Channel On-Resistance Variation with

Gate Voltage and Drain Current.

1.6

I = 5.3A

D

1.4

V =10V

GS

1.2

1

DS(ON)

R , NORMALIZED

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

2

V = 10V

GS

1.75

1.5

1.25

1

DS(ON)

R , NORMALIZED

0.75

DRAIN-SOURCE ON-RESISTANCE

0.5
0 5 10 15 20 25

I , DRAIN CURRENT (A)

D

T = 125°C

J

4.5

5.0

6.0
10

25°C

-55°C

Figure 3. N-Channel On-Resistance Variation with

Temperature.

25

V = 10V

DS

20

15

10

D

I , DRAIN CURRENT (A)

5

0

1 2 3 4 5 6

V , GATE TO SOURCE VOLTAGE (V)

GS

T = -55°C

J 25°C

125°C

Figure 5. N-Channel Transfer Characteristic.

Figure 4. N-Channel On-Resistance Variation with

Drain Current and Temperature.

1.2

V = V

1.1

1

0.9

th

V , NORMALIZED

0.8

0.7

GATE-SOURCE THRESHOLD VOLTAGE

0.6

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

DS GS

I = 250µA

D

Figure 6. N-Channel Gate Threshold Variation

with Temperature.

NDS8958 Rev. C

Typical Electrical Characteristics: N-Channel (continued)

1.1

I = 250µA

D

1.05

1

DSS

BV , NORMALIZED

0.95

DRAIN-SOURCE BREAKDOWN VOLTAGE

0.9

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

Figure 7. N-Channel Breakdown Voltage Variation

with Temperature.

2000

1500

1000

500

CAPACITANCE (pF)

200

100

f = 1 MHz
V = 0V

GS

0.1 0.2 0.5 1 2 5 10 20 30
V , DRAIN TO SOURCE VOLTAGE (V)

DS

C

C

iss

oss

C

Figure 9. N-Channel Capacitance Characteristics.

rss

25

V =0V

10

GS

1

T = 125°C

J

0.1

0.01

S

I , REVERSE DRAIN CURRENT (A)

0.001

0.2 0.4 0.6 0.8 1 1.2 1.4
V , BODY DIODE FORWARD VOLTAGE (V)

SD

25°C

-55°C

Figure 8. N-Channel Body Diode Forward Voltage

Variation with Current and Temperature.

10

I = 5.3A

D

8

6

4

2

GS

V , GATE-SOURCE VOLTAGE (V)

0

0 5 10 15 20 25

V = 5V

DS

Q , GATE CHARGE (nC)

g

10V

20V

Figure 10. N-Channel Gate Charge Characteristics.

20

V = 10V

DS

16

T = -55°C

J

25°C

12

8

4

FS

g , TRANSCONDUCTANCE (SIEMENS)

0

0 5 10 15 20 25

I , DRAIN CURRENT (A)

D

125°C

Figure 11. N-Channel Transconductance Variation

with Drain Current and Temperature.

NDS8958 Rev. C

Typical Electrical Characteristics: P-Channel (continued)

-20

V = -10V

GS

-15

-10

-5

D

I , DRAIN-SOURCE CURRENT (A)

0

-6.0

V , DRAIN-SOURCE VOLTAGE (V)

DS

-5.0

-4.5

-4.0

-3.5

-3.0

-4-3-2-10

3

V = -3.5V

2.5

2

1.5

DS(on)

R , NORMALIZED

1

DRAIN-SOURCE ON-RESISTANCE

0.5

GS

- 4.0

-4.5

I , DRAIN CURRENT (A)

D

Figure 12. P-Channel On-Region Characteristics. Figure 13. P-Channel On-Resistance Variation

with Gate Voltage and Drain Current.

1.6

I = -4.0A

D

1.4

V = -10V

GS

1.2

1

DS(ON)

R , NORMALIZED

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

2

V = -10V

GS

1.5

1

DS(on)

R , NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

0.5

T = 125°C

J

I , DRAIN CURRENT (A)

D

-5.0

-6.0

-10

-20-16-12-8-40

25°C

-55°C

-20-16-12-8-40

Figure 14. P-Channel On-Resistance Variation with

Temperature.

-20

V = -10V

DS

-15

-10

-5

D

I , DRAIN CURRENT (A)

0

V , GATE TO SOURCE VOLTAGE (V)

GS

T = -55°C

J

125°C

25°C

-6-5-4-3-2-1

Figure 15. P-Channel On-Resistance Variation with

Drain Current and Temperature.

1.2

1.1

1

0.9

th

0.8

V , NORMALIZED

0.7

GATE-SOURCE THRESHOLD VOLTAGE

0.6

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

Figure 16. P-Channel Transfer Characteristics. Figure 17. P-Channel Gate Threshold Variation

with Temperature.

V = V

GS

DS

I = -250µA

D

NDS8958 Rev. C

Typical Electrical Characteristics: P-Channel (continued)

1.1

I = -250µA

1.08

1.06

1.04

1.02

DSS

BV , NORMALIZED

0.98

0.96

DRAIN-SOURCE BREAKDOWN VOLTAGE

0.94

D

1

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

Figure 18. P-Channel Breakdown Voltage

Variation with Temperature.

2000

1000

500

300

CAPACITANCE (pF)

200

100

f = 1 MHz
V = 0V

GS

0.1 0.2 0.5 1 2 5 10 30

-V , DRAIN TO SOURCE VOLTAGE (V)

DS

C

C

iss

oss

C

rss

20

V = 0V

10

GS

5

T = 125°C

J

1

0.1

0.01

S

-I , REVERSE DRAIN CURRENT (A)

0.001
0 0.4 0.8 1.2 1.6 2

25°C

-55°C

-V , BODY DIODE FORWARD VOLTAGE (V)

SD

Figure 19. P-Channel Body Diode Forward Voltage

Variation with Current and Temperature.

10

I = -4.0A

D V = -5V

8

6

4

2

GS

-V , GATE-SOURCE VOLTAGE (V)

0

0 5 10 15 20 25

Q , GATE CHARGE (nC)

DS

-20V

-10V

g

Figure 20. P-Channel Capacitance Characteristics. Figure 21. P-Channel Gate Charge Characteristic.

12

V = -10V

DS

9

6

3

FS

g , TRANSCONDUCTANCE (SIEMENS)

0

I , DRAIN CURRENT (A)

D

T = -55°C

J

25°C

125°C

-20-16-12-8-40

Figure 22. P-Channel Transconductance Variation with

Drain Current and Temperature.

NDS8958 Rev. C

Typical Thermal Characteristics: N & P-Channel

- V , DRAIN-SOURCE CURRENT (V)

-I , DRAIN CURRENT (A)

2.5

2

1.5

1b

1

1c

0.5

STEADY-STATE POWER DISSIPATION (W)

0 0.2 0.4 0.6 0.8 1

2oz COPPER MOUNTING PAD AREA (in )

Total Power for Dual Operation

1a

Power for Single Operation

4.5"x5" FR-4 Board
T = 25 C

A

Still Air

o

2

Figure 23. SO-8 Dual Package Maximum

Steady-State Power Dissipation versus
Copper Mounting Pad Area.

4.5

4

3.5

1b

1c

3

2.5

D

-I , STEADY-STATE DRAIN CURRENT (A)
2

0 0.1 0.2 0.3 0.4 0.5

2oz COPPER MOUNTING PAD AREA (in )

4.5"x5" FR-4 Board

o

T = 25 C

A

Still Air
V = -10V

GS

2

6

1a

5

1b

4

1c

3

D

I , STEADY-STATE DRAIN CURRENT (A)

2

0 0.1 0.2 0.3 0.4 0.5

2oz COPPER MOUNTING PAD AREA (in )

4.5"x5" FR-4 Board

o

T = 25 C

A

Still Air
V = 10V

GS

2

Figure 24. N-Ch Maximum Steady-State Drain

Current versus Copper Mounting Pad
Area.

50

1a

20

10

RDS(ON) LIMIT

5

1

0.5

V = 10V

GS

0.1

D

I , DRAIN CURRENT (A)

0.05

0.01

SINGLE PULSE

R = See Note 1c

JA

θ

T = 25°C

A

0.1 0.2 0.5 1 2 5 10 30 50
V , DRAIN-SOURCE VOLTAGE (V)

DS

DC

10s

100us

1ms

10ms

100ms

1s

Figure 25. P-Ch Maximum Steady- State

Drain Current versus Copper Mounting
Pad Area.

50

20

10

5

RDS(ON) LIMIT

1

0.5

V = -10V

GS

D

0.1

0.05

0.01

SINGLE PULSE

R = See Note 1c

JA

θ

T = 25°C

A

0.1 0.2 0.5 1 2 5 10 30 50

DS

DC

10s

1ms

10ms

100ms

1s

Figure 27. P-Channel Maximum Safe Operating

Area.

Figure 26. N-Channel Maximum Safe Operating

Area.

100us

NDS8958 Rev. C

Typical Thermal Characteristics: N & P-Channel

1

0.5

0.2

0.1

0.05

0.02

0.01

0.005

r(t), NORMALIZED EFFECTIVE

0.002

TRANSIENT THERMAL RESISTANCE

0.001

0.0001 0.001 0.01 0.1 1 10 100 300

D = 0.5

0.2

0.1

0.05

0.02

0.01

Single Pulse

t , TIME (sec)

1

Figure 28. Transient Thermal Response Curve.

Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change

depending on the circuit board design.

R (t) = r(t) * R

JA

θ

R = See Note 1c

JA

θ

P(pk)

t

1

t

2

T - T = P * R (t)

J

A

Duty Cycle, D = t / t

JA

θ

JA

θ

2

1

V

DD

t

d(on)

V

IN

V

GS

R

GEN

G

R

L

D

V

OUT

V

OUT

DUT

V

S

IN

10%

t t

on off

t

r

d(off)

90%

10%

90%

50%

50%

90%

10%

PULSE WIDTH

Figure 29. N or P-Channel Switching Test Circuit. Figure 30. N or P-Channel Switching Waveforms.

tt

f

NDS8958 Rev. C

SO-8 Tape and Reel Data and Package Dimensions

SOIC(8lds) Packaging
Configuration: Figure 1.0

ELECTROSTATIC

SENSITIVE DEVICES

DO NOT SHIP OR STORE NEAR STRONG ELECTROSTATIC
ELECTROMAGNETIC, MAGNETIC OR RADIOACTIVE FIELDS

TNR DATE
PT NUMBER
PEEL STRENGTH MIN ______________gms

Customized
Label

Packaging Option
Packaging type

Qty per Reel/Tube/Bag
Reel Size
Box Dimension (mm)
Max qty per Box
Weight per unit (gm)
Weight per Reel (kg)

Note/Comments

MAX _____________ gms

ESD Label

SOIC (8lds) Packaging Information

Standard

(no flow code)

2,500 95 4,000

13" Dia

343x64x343 530x130x83 343x64x343

5,000 30,000 8,000

0.0774 0.0774 0.0774 0.0774

0.6060 - 0.9696 0.1182

TNR

L86Z F011

Rail/Tube-TNR

13" Dia

Embossed Car rier Tape

Antistatic Cover Tape

Static Dissipative

F63TNR
Label

D84Z

TNR

500

7" Dia

184x18 7x47

1,000

F

NDS

9959

9959

852

SOIC-8 Unit Orientation

343mm x 342mm x 64mm

Stand a r d In t e rm ed iate box

Packaging Description:

SOIC-8 parts are shipped in tape. The carrier tape is
made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
2,500 uni t s pe r 13" o r 33 0c m d ia met er reel . Th e reel s ar e
dark blue in color and is made of polystyrene plastic (anti­static coated). Other option comes in 500 units per 7" or
177cm di ameter reel. This and some o ther options are
further described in the Packaging Information table.

These full reels are individually barcode labeled and
placed inside a standard intermediate box (illustrated in
figure 1.0) made of recyclable corrugated brown paper.
One box contains two reels maximum. And these boxes
are placed inside a barcode labeled shipping box which
comes in di ff ere nt siz es depe nd in g on th e num be r of pa rts
shippe d.

F

NDS

9959

F

NDS

9959

F

NDS

852

852

852

F

NDS
9959

852

Pin 1

F63TNR Label sample

LOT: CBVK741B019

FSID: FDS9953A

D/C1: D9842 QTY1: SPEC REV:
D/C2: QTY2: CPN:

QTY: 2500

SPEC:

N/F: F (F63TNR)3

SOIC(8lds) Tape Leader and Trailer
Configuration: Figure 2.0

Carrier Tape

Cover Tape

Trailer Tape
640mm minimum or
80 empty pockets

F63TNLab el

ESD Label

Components

ESD Label

F63TNLabel

Leader Tape
1680mm minimum or
210 empty pockets

July 1999, Rev. B

SO-8 Tape and Reel Data and Package Dimensions, continued

SOIC(8lds) Embossed Carrier Tape
Configuration: Figure 3.0

T

K0

Wc

B0

P0

D0

E1

F

W

E2

Tc

A0

D1

P1

User Direction of Feed

Dimensions are in millimeter

Pkg type

SOIC

(12mm)

Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481

SOIC(8lds) Reel Configuration: Figure 4.0

A0 B0 W D0 D1 E1 E2 F P1 P0 K0 T Wc Tc

(8lds)

6.50

5.30

12.0

1.55

1.60

1.75

+/-0.10

+/-0.10

+/-0.3

+/-0.05

+/-0.10

+/-0.10

10.25
min

rotational and lateral movement requirements (see sketches A, B, and C).

B0

20 deg maximum component rotation

Sketch A (Side or Front Sectional View)

Component Rotation

Sketch B (Top View)

Component Rotation

W1 Measured at Hub

5.50
+/-0.05

20 deg maximum

A0

8.0
+/-0.1

Typical
component
cavity
center line

Typical
component
center line

Dim A

Max

4.0
+/-0.1

0.450

2.1
+/-0.10

0.5mm
maximum

Sketch C (Top View)

Component lateral movement

+/-

0.150

9.2
+/-0.3

0.5mm
maximum

0.06
+/-0.02

Dim A

max

Tape Size

12mm 7" Dia

12mm 13" Dia

 1998 Fairchild Semiconductor Corporation

Reel

Option

Dim N

Diameter Option

7"

See detail AA

B Min

Dim C

13" Diameter Option

See detail AA

W2 max Measured at Hub

Dim D

W3

min

DETAIL AA

Dimensions are in inches and millimeters

Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL)

7.00

0.059

177.8

13.00
330

1.5

0.059

1.5

512 +0.020/- 0.008
13 +0.5/-0.2

512 +0.020/- 0.008
13 +0.5/-0.2

0.795

2.165550.488 +0.078/-0.000

20.2

0.795

7.00

20.2

178

12.4 +2/0

0.488 +0.078/-0.000

12.4 +2/0

0.724

18.4

0.724

18.4

0.469 – 0.606

11.9 – 15.4

0.469 – 0.606

11.9 – 15.4

July 1999, Rev. B

SO-8 Tape and Reel Data and Package Dimensions, continued

SOIC-8 (FS PKG Code S1)

1 : 1

Scale 1:1 on letter size paper

Dimen sions show n below are in:

inches [millimeters]

Part Weight per unit (gram): 0.0774

9

September 1998, Rev. A

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™
CoolFET™
CROSSVOLT™

2

E

CMOS

TM

FACT™
FACT Quiet Series™

®

FAST
FASTr™
GTO™
HiSeC™

ISOPLANAR™
MICROWIRE™
POP™
PowerTrench



QFET™
QS™

Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8

SyncFET™
TinyLogic™
UHC™
VCX™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.
As used herein:

1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.

2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or

effectiveness.

PRODUCT STA TUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

Formative or
In Design

First Production

Full Production

Not In Production

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. D