Datasheet NDS0610 Datasheet (Fairchild Semiconductor)

April 1995

NDF0610 / NDS0610
P-Channel Enhancement Mode Field Effect Transistor

General Description Features

These P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process has been designed to minimize on-state resistance,
provide rugged and reliable performance and fast switching.
They can be used, with a minimum of effort, in most
applications requiring up to 180mA DC and can deliver
pulsed currents up to 1A. This product is particularly suited
to low voltage applications requiring a low current high side
switch.

____________________________________________________________________________________________

D

-0.18 and -0.12A, -60V. R

DS(ON)

= 10Ω

Voltage controlled p-channel small signal switch
High density cell design for low R

DS(ON)

TO-92 and SOT-23 packages for both through hole and
surface mount applications

High saturation current

S

G

S

D

G

S

TO-92

NDF0610

Absolute Maximum Ratings T

= 25°C unless otherwise noted

A

Symbol Parameter NDF0610 NDS0610 Units

V

DSS

V

DGR

V

GSS

Drain-Source Voltage -60 V
Drain-Gate Voltage (RGS < 1 MΩ)

Gate-Source Voltage - Continuous ±20 V

- Nonrepetitive (tP < 50 µs) ±30 V

I

D

Drain Current - Continuous -0.18 -0.12 A

- Pulsed -1

P

D

Maximum Power Dissipation TA = 25°C 0.8 0.36 W

Derate above 25°C 5 2.9 mW/oC
TJ,T
T

L

Operating and Storage Temperature Range -55 to 150 °C

STG

Maximum lead temperature for soldering

purposes, 1/16" from case for 10 seconds

THERMAL CHARACTERISTICS

R

θ

Thermal Resistance, Junction-to-Ambient 200 350 °C/W

JA

SOT-23

NDS0610

G

D

-60 V

300 °C

© 1998 Fairchild Semiconductor Corporation

NDS0610.SAM

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Symbol Parameter Conditions Min Typ Max Units

OFF CHARACTERISTICS

BV
I

DSS

I

GSSF

I

GSSR

DSS

Drain-Source Breakdown Voltage VGS = 0 V, ID = -10 µA -60 V
Zero Gate Voltage Drain Current VDS = -48 V, V

= 0 V -1 µA

GS

T

= 125°C -200 µA

J

Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 10 nA
Gate - Body Leakage, Reverse VGS = -20 V, VDS= 0 V -10 nA

ON CHARACTERISTICS (Note 1)

V

R

GS(th)

DS(ON)

Gate Threshold Voltage V

= V

, I

DS

= -1 mA -1 -2.4 -3.5 V

GS

D

T

= 125°C -0.6 -2.1 -3.2

J

Static Drain-Source On-Resistance VGS = -10 V, ID = -0.5 A 3.6 10

T

= 125°C 5.9 16

J

VGS = -4.5 V, ID = -0.25 A 5.2 20

T

= 125°C 7.9 30

J

I

D(on)

On-State Drain Current VGS = -10 V, VDS = -10 V -0.6 -1.6 A

VGS = -4.5 V, VDS = -10 V -0.35

g

FS

Forward Transconductance VDS = -10 V, ID = -0.1 A 70 170 mS

DYNAMIC CHARACTERISTICS

C

iss

C

oss

C

rss

Input Capacitance VDS = -25 V, VGS = 0 V,
Output Capacitance 11 25 pF

f = 1.0 MHz

Reverse Transfer Capacitance 3.2 5 pF

40 60 pF

SWITCHING CHARACTERISTICS (Note 1)

t

D(on)

t

r

t

D(off)

t

f

Q
Q
Q

g

gs

gd

Turn - On Delay Time VDD = -25 V, ID = -0.18 A,
Turn - On Rise Time 5 15 nS

VGS = -10 V, R

GEN

= 25 Ω

7 10 nS

Turn - Off Delay Time 13 15 nS
Turn - Off Fall Time 10 20 nS

Total Gate Charge VDS = -48 V,
Gate-Source Charge 0.6 nC

ID = -0.5 A, VGS = -10 V

1.43 nC

Gate-Drain Charge 0.25 nC

DRAIN-SOURCE DIODE CHARACTERISTICS

I

S

I

SM

V

SD

t

rr

I

rr

Note:

1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.

Maximum Continuous Source Current -0.18 A
Maximum Pulse Source Current (Note 1) -1 A
Drain-Source Diode Forward Voltage

Reverse Recovery Time VGS = 0 V, IS = -0.5 A,
Reverse Recovery Current 2.8 A

VGS = 0 V, IS = -0.5 A

(Note 1)

dIF/dt = 100 A/µs

-1.2 -1.5 V

TJ = 125°C -0.98 -1.3

40 ns

Ω

NDS0610.SAM

Typical Electrical Characteristics

-1.4

-1.2

-1

-0.8

-0.6

-0.4

-0.2

D

I , DRAIN-SOURCE CURRENT (A)

0

V , DRAIN-SOURCE VOLTAGE (V)

DS

V = -10V

GS

-9

-8

Figure 1. On-Region Characteristics

1.8

I = -0.5A

D

1.6

V = -10V

GS

1.4

1.2

1

DS(ON)

R , NORMALIZED

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

-7

-6

-5

-4

2.2

V = -4V

GS

2

1.8

1.6

1.4

DS(on)

1.2

R , NORMALIZED

1

DRAIN-SOURCE ON-RESISTANCE

-10-8-6-4-20

0.8

-5

-6

I , DRAIN CURRENT (A)

D

-7

-8

-9

-10

-1.4-1.2-1-0.8-0.6-0.4-0.20

Figure 2. On-Resistance Variation with Gate

Voltage and Drain Current

3

2.5

2

1.5

DS(on)

R , NORMALIZED

1

DRAIN-SOURCE ON-RESISTANCE

0.5

T = 125°C

J

25

-55

I , DRAIN CURRENT (A)

D

V

GS

-4.5V

-10V

125

25

-55

-1.4-1.2-1-0.8-0.6-0.4-0.20

Figure 3. On-Resistance Variation

with Temperature

-1.2

V = -10V

-1

-0.8

-0.6

-0.4

D

I , DRAIN CURRENT (A)

-0.2

0

DS

V , GATE TO SOURCE VOLTAGE (V)

GS

T = -55°C

J

Figure 5. Transfer Characteristics

25

125

Figure 4. On-Resistance Variation with Drain

Current and Temperature

1.1

1.05

1

0.95

0.9

th

V , NORMALIZED

0.85

GATE-SOURCE THRESHOLD VOLTAGE

0.8

-10-8-6-4-20

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

V = V

DS GS

I = -1mA

D

Figure 6. Gate Threshold Variation with

Temperature

NDS0610.SAM

Typical Electrical Characteristics (continued)

1.15

I = -10µA

D

1.1

1.05

1

DSS

BV , NORMALIZED

0.95

0.9

DRAIN-SOURCE BREAKDOWN VOLTAGE (V)

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

Figure 7. Breakdown Voltage Variation with

Temperature

70
50

30

20

10

CAPACITANCE (pF)

5

3

2

0.1 0.2 0.5 1 2 5 10 20 30 60

f = 1 MHz
V = 0V

GS

-V , DRAIN TO SOURCE VOLTAGE (V)

DS

C

rss

C

C

iss

oss

1.5

V = 0V

GS

1

T = 125°C

0.5

0.3

J

25

-55

0.2

S

-I , REVERSE DRAIN CURRENT (A)

0.1

0.6 0.8 1 1.2 1.4 1.6 1.8

-V , BODY DIODE FORWARD VOLTAGE (V)

SD

Figure 8. Body Diode Forward Voltage

Variation with Current and Temperature

-10

-8

-6

-4

-2

GS

V , GATE-SOURCE VOLTAGE (V)

0

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6

V = -12V

DS

Q , GATE CHARGE (nC)

g

-24

-48

I = -0.5A

D

Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics

g , TRANSCONDUCTANCE (SIEMENS)

0.4

0.3

0.2

0.1

FS

0

I , DRAIN CURRENT (A)

D

T = -55°C

J

25

125

V = -10V

DS

-1.4-1.2-1-0.8-0.6-0.4-0.20

Figure 11. Transconductance Variation with Drain

Current and Temperature

NDS0610.SAM

Typical Electrical Characteristics (continued)

t , TIME (sec)

TRANSIENT THERMAL RESISTANCE

t , TIME (sec)

TRANSIENT THERMAL RESISTANCE

3
2

1

0.5

RDS(ON) Limit

0.1

0.05

D

-I , DRAIN CURRENT (A)

0.01

0.005

V = -10V

GS

SINGLE PULSE

T = 25°C

A

1 2 5 10 20 30 60 80

- V , DRAIN-SOURCE VOLTAGE (V)

DS

100ms

1s

10s

DC

Figure 12. NDF0610 (TO-92)

Maximum Safe Operating Area

100us

1ms

10ms

3
2

1

0.5

RDS(ON) Limit

0.1

0.05

D

-I , DRAIN CURRENT (A)

0.01

0.005

V = -10V

GS

SINGLE PULSE

T = 25°C

A

1 2 5 10 20 30 60 80

- V , DRAIN-SOURCE VOLTAGE (V)

DS

DC

10s

10ms

100ms

1s

1ms

Figure 13. NDS0610 (SOT-23) Maximum Safe

Operating Area

1

D = 0.5

0.5

R (t) = r(t) * R

θ

JA

R = 200 C/W

θ

P(pk)

t

1

T - T = P * R (t)

J

A

Duty Cycle, D = t /t

0.05

0.02

0.01

0.2

0.1

Single Pulse

1

0.2

0.1

0.05

r(t), NORMALIZED EFFECTIVE

0.02

0.01

0.0001 0.001 0.01 0.1 1 10 100 300

JA

Datasheet)

t

2

o

θ

100us

θ

JA

1 2

JA

Figure 14. NDF0610 (TO-92) Transient Thermal

Response Curve.

1

D = 0.5

0.5

0.2

0.2

0.1

0.1

0.05

0.05

0.02

0.01

r(t), NORMALIZED EFFECTIVE

0.01

Single Pulse

0.002

0.001

0.0001 0.001 0.01 0.1 1 10 100 300

1

R (t) = r(t) * R

θ

JA

R = 350 C/W

θ

JA

P(pk)

t

1

t

2

T - T = P * R (t)

J

A

Duty Cycle, D = t /t

θ

JA

o

θ

JA

1 2

Figure 15. NDS0610 (SOT-23) Transient Thermal

Response Curve.

NDS0610.SAM

TO-92 Tape and Reel Data and Package Dimensions

TO-92 Packaging
Configuration: Figure 1.0

FSCINT Label sample

FAIRCHILD SEMICONDUCTOR CORPORATION

LOT:

CBVK741B019

NSID:

PN2222N

D/C1:

SPEC REV:

D9842

QA REV:

HTB:B

QTY:

10000

SPEC:

B2

(FSCINT)

F63TNR Label sample

LOT: CBVK741B019

FSID: PN222N

D/C1: D9842 QTY1: SPEC REV:
D/C2: QTY2: CPN:

QTY: 2000

SPEC:

N/F: F (F63TNR)3

TO-92 TNR/AMMO PACKING INFROMATION

Packing Style Quantity EOL cod e

Reel A 2,000 D26Z

E2,000 D27Z

Ammo M 2,000 D74Z

P2,000 D75Z

Unit w eight = 0.22 gm
Reel weigh t with com ponents = 1.04 kg
Amm o weight with compo n ents = 1.02 kg
Max q uantity p er intermedi a te box = 1 0,000 units

(TO-92) BULK PACKING INFORMATION

EOL

CODE

J18Z

J05Z

NO EOL

CODE

DESCRIPTION

TO-18 OPTION STD NO LEAD CLIP

TO-5 OPTION STD NO LEAD CLIP
TO-92 STANDARD

STRAIGHT

NO LEADCLIP

LEADCLIP

DIMENSION

327mm x 158mm x 135mm

Immediate Box

Customized
Label

QUANTITY

2.0 K / BOX

1.5 K / BOX

2.0 K / BOX

TAPE and REEL OPTION

See Fig 2.0 for various

Reeling Styles

5 Reels per

Intermediate Box

F63TNR
Label

Customized
Label

AMMO PACK OPTION

See Fig 3.0 for 2 Ammo

Pack Options

5 Ammo boxes per

Intermediate Box

F63TNR
Label

BULK OPTION

See Bulk Packing
Information table

FSCINT Label

375mm x 267mm x 375mm

Intermediate Box

333mm x 231mm x 183mm

Intermediate Box

Anti-static

Bubble Sheets

FSCINT
Label

Customized
Label

FSCINT
Label

Customized
Label

530mm x 130mm x 83mm

FSCINT Label

Intermediate box

2000 units per
EO70 box for

std option

C
Label

10,000 units maximum

per intermediate box

for std option

ustomized

5 EO70 boxes per
intermediate Box

114mm x 102mm x 51mm

Immediate Box

September 1999, Rev. B

TO-92 Tape and Reel Data and Package Dimensions, continued

TO-92 Reeling Style
Configuration: Figure 2.0

Machine Option “A” (H)

Style “A”, D26Z, D70Z (s/h )

TO-92 Radial Ammo Packaging
Configuration: Figure 3.0

FIRST WIRE OFF IS COLLECTOR
ADHESIVE TAPE IS ON THE TOP SIDE
FLAT OF TRANSISTOR IS ON TOP

ORDER STYLE

D74Z (M)

Machine Option “E” (J)

Style “E”, D27 Z, D71 Z (s/ h)

FIRST WIRE OFF IS EMITTER
ADHESIVE TAPE IS ON THE TOP SIDE
FLAT OF TRANSISTOR IS ON BOTTOM

ORDER STYLE

D75Z (P)

FIRST WIRE OFF IS EMITTER (ON PKG. 92)
ADHESIVE TAPE IS ON BOTTOM SIDE
FLAT OF TRANSISTOR IS ON BOTTOM

FIRST WIRE OFF IS COLLECTOR (ON PKG. 92)
ADHESIVE TAPE IS ON BOTTOM SIDE
FLAT OF TRANSISTOR IS ON TOP

September 1999, Rev. B

TO-92 Tape and Reel Data and Package Dimensions, continued

TO-92 Tape and Reel Taping
Dimension Configuration: Figure 4.0

P Pd

Ha

H1

HO

P1 F1

User Direction of Feed

TO-92 Reel
Configuration: Figure 5.0

Hd

b

d

L1

P2

PO

DO

S

L

W1

WO

ITEM DESCRIPTION

Base of Package to Lead Bend
Compon en t He ig ht
Lead Clinch He ight
Component Base Height
Component Alignment ( side/side )
Component Alignment ( front/back )
Compon en t Pi tc h
Feed Hole Pitch
Hole Center to First Lead
Hole Center to Component Center
Lead Spread
Lead Thickness
Cut Lead Length
Taped Lead Length
Taped Lead Thickness
Carrier Tape Thickness
Carrier Tape Width
Hold - down Tape Width
Hold - down Tape position
Feed Hole Position
Sprocket Hole Diameter
Lead Spring Out

t

W2

W

t1

SYMBOL

b
Ha
HO
H1
Pd
Hd
P
PO
P1
P2
F1/F2
d
L
L1
t
t1
W
WO
W1
W2
DO
S

DIMENSION

0.098 (m ax )

0.928 (+ /- 0.025)

0.630 (+ /- 0.020)

0.748 (+ /- 0.020)

0.040 (m ax )

0.031 (m ax )

0.500 (+ /- 0.020)

0.500 (+ /- 0.008)

0.150 (+0.009, -0.010)

0.247 (+ /- 0.007)

0.104 (+ /- 0 .010)

0.018 (+0.002, -0.003)

0.429 (m ax )

0.209 (+0.051, -0.052)

0.032 (+ /- 0.006)

0.021 (+ /- 0.006)

0.708 (+0.020, -0.019)

0.236 (+ /- 0.012)

0.035 (m ax )

0.360 (+ /- 0.025)

0.157 (+0.008, -0.007)

0.004 (m ax )

F63TNR Label

Customized La bel

W2

ELECTROSTAT I C

SENSITIVE DEV ICES

D3

Note : All dimensions are in inches.

D4

D1

ITEM DESCRIPTION SYSMBOL MINIMUM MAXIMUM

D2

W1

W3

Reel Diame t er D1 13.975 14.02 5
Arbor Hol e Di am et er ( Standard) D2 1.160 1.200

Core Diameter D3 3.100 3.300
Hub Recess Inner Diameter D4 2.700 3.100
Hub Recess Depth W1 0.370 0 .570
Flange to Flange Inner Width W2 1.630 1.690
Hub to Hub Cente r Width W3 2.090

Note: All dimensions ar e inch es

(Small Hole) D2 0.650 0.700

July 1999, Rev. A

TO-92 T ape and Reel Data and Package Dimensions

TO-92 (FS PKG Code 92, 94, 96)

Scale 1:1 on letter size paper

Dimensions shown below are in:

inches [millimeters]

Part Weight per unit (gram): 0.1977

1:1

January 2000, Rev. B

SOT-23 Tape and Reel Data and Package Dimensions

SOT-23 Packaging
Configuration: Figure 1.0

SOT-23 Packaging Information

Packaging Option
Packaging type

Qty per Reel/Tube/Bag
Reel Size
Box Dimensi on (mm)
Max qty per B o x
Weight per unit (gm)
Weight per Reel (kg)

Note/Comments

Customized Label

Stan dard

(no flow code)

187x107x183 343x343x64

24,000 30,000

0.0082 0.0082

0.1175 0.4006

D87Z

TNR
3,000 10,000
7" Dia

TNR

13"

Antistatic Cover Tape

Human Readable

Label

Embossed

Carrier Tape

343mm x 342mm x 64mm

Intermediate box for L87Z Option

Packaging Description:

SOT-23

parts are shipped in tape. The carrier tape is
made from a dissipative (carbon fi lled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
3,000 units per 7" or 177cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (anti­static coated). Other option comes in 10,000 units per 13"
or 330cm diameter r eel. This and some other opti ons are
described in the Packaging Information table.

These full reel s are individually labeled and placed inside
a standard intermediate made of recycl abl e corrugated
brown paper with a Fairchild logo printing. One pizza box
contains eight reels maximum. And these intermediate
boxes are placed inside a labeled shipping box which
comes in diff erent sizes depending on the number of parts
shipped.

3P 3P 3P 3P

SOT-23 Unit Orientation

Human Readable Label

Human Readable Label sample

SOT-23 Tape Leader and Trailer

Configuration: Figure 2.0

Carrier Tape

Cover Tape

Trailer Tape
300mm minimum or

75 empty pocke t s

Components

Human readable
Label

187mm x 107mm x 183mm

Intermediate Box for Standard Option

Leader Tape
500mm minimum or

125 empty pockets

September 1999, Rev. C

SOT-23 Tape and Reel Data and Package Dimensions, continued

SOT-23 Embossed Carrier Tape
Confi guration: Figure 3.0

D0P0 P2

T

B0

Wc

D1

E1

W

F

E2

Tc

K0

P1

A0

User Direction of Feed

Dimensions are in millimeter

Pkg type

SOT-23

(8mm)

Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481

SOT-23 Reel Configuration: Figure 4.0

A0 B0 W D0 D1 E1 E2 F P1 P0 K0 T Wc Tc

3.15

2.77

8.0

1.55

1.125

1.75

6.25

+/-0.10

+/-0.10

+/-0.3

+/-0.05

+/-0.125

+/-0.10

3.50

min

+/-0.05

rotational and lateral movement requirements (see sketches A, B, and C).

20 deg maximum

B0

20 deg maximum component rotation

Sketch A (Side or Front Sectional View)

Component Rotation

W1 Measured at Hub

A0

Sketch B (Top View)

Component Rotation

4.0
+/-0.1

Typical
component
cavity
center line

Typical
component
center line

Dim A

Max

4.0
+/-0.1

1.30

0.228
+/-0.013

5.2
+/-0.3

0.5mm
maximum

+/-0.10

0.5mm
maximum

Sketch C (Top View)

Component lateral movement

0.06
+/-0.02

Dim A

max

Tape Size

8mm 7" Dia

8mm 13 " Dia

Reel

Option

Dim N

Diameter Option

7"

See detail AA

B Min

Dim C

13" Diameter Option

See detail AA

W2 max Measured at Hub

W3

Dim D

min

DETAIL AA

Dimensions are in inches and millimeters

Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL)

7.00

0.059

177.8

13.00
330

1.5

0.059

1.5

512 +0.020/ -0.008
13 +0.5/-0.2

512 +0.020/ -0.008
13 +0.5/-0.2

0.795

2.165550.331 +0.059/-0.000

20.2

0.795

4.00

20.2

100

8.4 +1.5/0

0.331 +0.059/-0.000

8.4 +1.5/0

0.567

14.4

0.567

14.4

0.311 – 0.429

7.9 – 10.9

0.311 – 0.429

7.9 – 10.9

September 1999, Rev. C

SOT-23 Tape and Reel Data and Package Dimensions, continued

SOT-23 (FS PKG Code 49)

1:1

Scale 1:1 on letter size paper

Dimensions shown below are in:

inches [millimeters]

Part Weight per unit (gr am): 0.0082

September 1998, Rev. A1

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

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E

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FACT™
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®

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ISOPLANAR™
MICROWIRE™
POP™
PowerTrench



QFET™
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Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8

SyncFET™
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VCX™

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PRODUCT STA TUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

Formative or
In Design

First Production

Full Production

Not In Production

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. D