Datasheet MTIL113 Datasheet (Motorola)

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
SEMICONDUCTOR TECHNICAL DATA
    
The MTIL113 device consists of a gallium arsenide infrared emitting diode
optically coupled to a monolithic silicon photodarlington detector.
This device is designed for use in applications requiring high collector output
currents at lower input currents.
Meets or Exceeds All JEDEC Registered Specifications
Applications
Low Power Logic Circuits
Interfacing and coupling systems of different potentials and impedances
Telecommunications Equipment
Portable Electronics
Solid State Relays
MAXIMUM RATINGS
INPUT LED
Reverse Voltage V Forward Current — Continuous I LED Power Dissipation @ TA = 25°C
Derate above 25°C
OUTPUT DETECTOR
Collector–Emitter Voltage V Emitter–Collector Voltage V Collector–Base Voltage V Collector Current — Continuous I Detector Power Dissipation @ TA = 25°C
Derate above 25°C
TOTAL DEVICE
Isolation Surge Voltage
(Peak ac Voltage, 60 Hz, 1 sec Duration)
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C Ambient Operating Temperature Range Storage Temperature Range Soldering Temperature (10 sec, 1/16 from case) T
1. All Motorola 6–Pin devices exceed JEDEC specification and are 7500 Vac(pk).
2. Isolation surge voltage is an internal device dielectric breakdown rating. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
3. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.
(TA = 25°C unless otherwise noted)
Rating
(2)
(3)
(3)
Symbol Value Unit
3 Volts
60 mA
100
1.41
30 Volts
5 Volts
30 Volts 125 mA 150
1.76
7500 Vac(pk)
250
2.94 –55 to +100 °C –55 to +150 °C
260 °C
P
CEO ECO CBO
P
V
ISO
P
T
T
R
F
D
C
D
D
A
stg
L
mW
mW/°C
mW
mW/°C
mW
mW/°C
Order this document
by MTIL113/D

STYLE 1 PLASTIC
6
1
STANDARD THRU HOLE
SCHEMATIC
1 2 3
PIN 1. LED ANODE
2. LED CATHODE
3. N.C.
4. EMITTER
5. COLLECTOR
6. BASE
6
5
4
Motorola Optoelectronics Device Data
Motorola, Inc. 1997
1
Page 2
MTIL113
ELECTRICAL CHARACTERISTICS
Characteristic
INPUT LED
Reverse Leakage Current (VR = 3 V, RL = 1 M ohms) I Forward Voltage (IF = 10 mA) V Capacitance (VR = 0 V, f = 1 MHz) C 1.8 pF
OUTPUT DETECTOR (TA = 25°C and IF = 0, unless otherwise noted)
Collector–Emitter Dark Current
(VCE = 10 V, Base Open)
Collector–Base Breakdown Voltage
(IC = 100 µA, IE = 0)
Collector–Emitter Breakdown Voltage
(IC = 100 µA, IB = 0)
Emitter–Collector Breakdown Voltage
(IE = 100 µA, IB = 0)
DC Current Gain
(VCE = 5 V, IC = 500 µA)
COUPLED (TA = 25°C unless otherwise noted)
Collector Output Current
(VCE = 1 V, IF = 10 mA)
Isolation Surge Voltage
(60 Hz ac Peak, 1 Second)
Isolation Resistance
(V = 500 V)
Collector–Emitter Saturation Voltage
(IC = 2 mA, IF = 8 mA)
Isolation Capacitance
(V = 0 V, f = 1 MHz)
Turn–On Time
(IC = 50 mA, IF = 200 mA, VCC = 10 V)
Turn–Off Time
(IC = 50 mA, IF = 200 mA, VCC = 10 V)
1. Always design to the specified minimum/maximum electrical limits (where applicable).
2. Current Transfer Ratio (CTR) = IC/IF x 100%.
3. Pulse Test: Pulse Width = 300 µs, Duty Cycle p 2%.
4. For this test, Pins 1 and 2 are common and Pins 4, 5 and 6 are common.
5. Isolation Surge Voltage, V
6. For test circuit setup and waveforms, refer to Figures 8 and 9.
(6)
(6)
(3)
(4,5)
(4)
(4)
ISO
(TA = 25°C unless otherwise noted)
(3)
, is an internal device dielectric breakdown rating.
(1)
Symbol Min Typ
R
F
I
CEO
V
(BR)CBO
V
(BR)CEO
V
(BR)ECO
h
FE
IC (CTR)
V
ISO
R
ISO
V
CE(sat)
C
ISO
t
on
t
off
(2)
0.05 100 µA — 1.34 1.5 Volts
100 nA
30 Volts
30 Volts
5 Volts
16K
30 (300) mA (%)
7500 Vac(pk)
10
1.25 Volts
0.2 pF
0.6 5 µs
45 100 µs
11
(1)
Max Unit
Ohms
, FORWARD VOLTAGE (V)
F
V
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
TA = –55°C
TA = 25°C
TA = 100°C
1.0
IF, FORWARD CURRENT (mA)
100.1
100
1.2 NORMALIZED TO:
VCE = 5.0 V
1.0 IF = 10 mA
TA = 25
°
0.8
0.6
, NORMALIZED CTR
0.4
CE CE
NCTR
0.2
0
C
1.0 IF, LED CURRENT (mA)
10 1000.1
Figure 1. Forward Voltage versus Forward Current Figure 2. Normalized Non–Saturated and
Saturated CTRce versus LED Current
2
Motorola Optoelectronics Device Data
VCE = 5.0 V
VCE = 1.0 V
1000
Page 3
10
NORMALIZED TO: VCE = 5.0 V IF = 10 mA
1.0
TA = 25
MTIL113
10
VCE = 5.0 V
°
C
VCE = 1.0 V
NORMALIZED TO: VCB = 3.5 V IF = 10 mA
1.0
TA = 25
°
C
0.1
, NORMALIZED I
CE CE
NI
0.01
0.001
1.0 IF, LED CURRENT (mA)
10 1000.1
Figure 3. Normalized Non–Saturated and Saturated
Collector–Emitter Current versus LED Current
10,000
8000
6000
4000
, FORWARD TRANSFER GAIN
2000
FE
H
TA = 25°C
0
0.10.01 IB, BASE CURRENT (mA)
1.0
VCE = 5.0 V
VCE = 1.0 V
10 100
0.1
, NORMALIZED I
CB CB
0.01
NI
0.001
1.0 IF, LED CURRENT (mA)
10 1000.1
Figure 4. Normalized Collector–Base Photocurrent
versus LED Current
80
m
, LOW/HIGH PROPAGATION DELAY ( s)
LH
tp
60
40
20
0
TA = 25°C VCC = 5.0 V VTH = 1.5 V
5.0 IF, LED CURRENT (mA)
100
15
1.0 K
220
470 100
W
W
W
W
20
Figure 5. Non–Saturated and Saturated HFE versus
Base Current
m
, HIGH/LOW PROPAGATION DELAY ( s)
HL
tp
20
15
10
5.0
0
100
1.0 K
W
5.0
Figure 7. High to Low Propagation Delay versus
Collector Load Resistance and LED Current
Motorola Optoelectronics Device Data
Figure 6. Low to High Propagation Delay versus
W
10 200
IF, LED CURRENT (mA)
Collector Load Resistance and LED Current
TA = 25°C VCC = 5.0 V VTH = 1.5 V
15
3
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MTIL113
I
F
V
CC
R
L
t
D
t
V
O
R
t
PLH
I
F
VTH = 1.5 V
t
PHL
t
S
t
F
Figure 8. Switching Waveform Figure 9. Switching Schematic
Package Dimensions in Inches (mm)
0.248 (6.30)
0.256 (6.50)
_
4 typ.
0.018 (0.45)
0.022 (0.55)
1
23
46
5
PIN ONE
0.335 (8.50)
0.343 (8.70)
0.039 (1.00) min.
0.130 (3.30)
0.150 (3.81)
0.020 (0.051) min.
0.031 (0.80)
0.035 (0.90)
0.100 (2.54) typ.
ID.
ANODE
CATHODE
NC
0.010 (0.25)
0.014 (0.35)
3
0.300 (7.62) typ.
18 typ.
_
0.300 (7.62)
0.347 (8.82)
BASE
61
COLLECTOR
52
EMITTER
4
0.110 (2.79)
0.150 (3.81)
V
O
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Motorola Optoelectronics Device Data
MTIL113/D
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