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MSC035SMA170S Silicon Carbide N-Channel Power MOSFET
Product Overview
The silicon carbide (SiC) power MOSFET productlinefrom Microsemi increases the performanceover silicon
MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications.
The MSC035SMA170S device is a 1700 V, 35 mΩ SiC MOSFET in a TO-268 (D3PAK) package.
Features
The following are key features of the MSC035SMA170S device:
Low capacitances and low gate charge
•
Fast switching speed due to low internal gate resistance (ESR)
•
Stable operation at high junction temperature, T
•
Fast and reliable body diode
•
Superior avalanche ruggedness
•
RoHS compliant
•
J(max)
= 175 °C
Benets
The following are benets of the MSC035SMA170S device:
High efciency to enable lighter, more compact system
•
Simple to drive and easy to parallel
•
Improved thermal capabilities and lower switching losses
•
Eliminates the need for external freewheeling diode
•
Lower system cost of ownership
•
Applications
The MSC035SMA170S device is designed for the following applications:
PV inverter, converter, and industrial motor drives
•
Smart grid transmission and distribution
•
Induction heating and welding
•
H/EV powertrain and EV charger
•
Power supply and distribution
•
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Device Specications
Device Specications
This section shows the specications of the MSC035SMA170S device.
Absolute Maximum Ratings
The following table shows the absolute maximum ratings of the MSC035SMA170S device.
Table 1 • Absolute Maximum Ratings
UnitRatingsCharacteristicSymbol
DSS
D
42Continuous drain current at TC= 100 °C
I
DM
GS
D
1
200Pulsed drain current
V1700Drain source voltageV
A59Continuous drain current at TC= 25 °CI
V23 to –10Gate-source voltageV
W278Total power dissipation at TC= 25 °CP
W/°C1.85Linear derating factor
Note:
Repetitive rating: pulse width and case temperature limited by maximum junction temperature.
1.
The following table shows the thermal and mechanical characteristics of the MSC035SMA170S device.
Table 2 • Thermal and Mechanical Characteristics
UnitMaxTypMinCharacteristicSym-
bol
θJC
J
STG
L
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°C/W0.540.36Junction-to-case thermal resistanceR
°C175–55Operating junction temperatureT
150–55Storage temperatureT
260Soldering temperature for 10 seconds (1.6 mm from case)T
oz0.14Package weightWt
g3.9
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Device Specications
Electrical Performance
The following table shows the static characteristics of the MSC035SMA170S device. TJ= 25 °C unless
otherwise specied.
Table 3 • Static Characteristics
UnitMaxTypMinTest ConditionsCharacteristicSymbol
(BR) DSS
R
DS(on)
GS(th)
DSS
GS(th)
/ΔT
1
= 2.5 mAGate-source threshold voltageV
DS,ID
= 2.5 mAThreshold voltage coefcientΔV
J
DS,ID
V1700VGS= 0 V, ID= 100 µADrain-source breakdown voltageV
mΩ4535VGS= 20 V, ID= 30 ADrain-source on resistance
V3.251.8VGS= V
mV/°C–5.1VGS= V
µA100VDS= 1700 V, VGS= 0 VZero gate voltage drain currentI
500VDS= 1700 V, VGS= 0 V
TJ= 125 °C
±100
GSS
VGS= 20 V/–10 VGate-source leakage currentI
nA
Note:
Pulse test: pulse width < 380 µs, duty cycle < 2%.
1.
The following table shows the dynamic characteristics of the MSC035SMA170S device. TJ= 25 °C unless
otherwise specied.
Table 4 • Dynamic Characteristics
iss
rss
oss
g
gs
gd
d(on)
f
UnitMaxTypMinTest ConditionsCharacteristicSymbol
Input capacitanceC
pF3300VGS= 0 V, VDD= 1000 V
VAC= 25 mV, ƒ = 1 MHz
10Reverse transfer capacitanceC
150Output capacitanceC
Total gate chargeQ
nC178VGS= –5 V/20 V, VDD= 850 V
ID= 30 A
49Gate-source chargeQ
27Gate-drain chargeQ
Turn-on delay timet
ID= 50 A, R
Freewheeling diode =
G(ext)
= 4 Ω1,
20Voltage fall timet
ns38VDD= 1200 V, VGS= –5 V/20 V
MSC035SMA170S (Vg = –5 V)
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Device Specications
UnitMaxTypMinTest ConditionsCharacteristicSymbol
d(off)
r
E
d(on)
f
d(off)
r
E
26Turn-off delay timet
10Voltage rise timet
on
off
2
368Turn-off switching energyE
Turn-on delay timet
ID= 50 A, R
Freewheeling diode =
G(ext)
= 4 Ω1,
20Voltage fall timet
µJ2743Turn-on switching energy
ns38VDD= 1200 V, VGS= –5 V/20 V
MSC050SDA170B
26Turn-off delay timet
10Voltage rise timet
on
off
2
368Turn-off switching energyE
µJ2820Turn-on switching energy
Ω0.85f = 1 MHz, 25 mV, drain shortEquivalent series resistanceESR
µs3VDS= 1200 V, VGS= 20 VShort circuit withstand timeSCWT
AS
Notes:
RGis total gate resistance excluding internal gate driver impedance.
1.
Eonincludes energy of the freewheeling diode.
2.
mJ4000VDS= 150 V, VGS= 20 V, ID= 30 AAvalanche energy, single pulseE
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Device Specications
The following table shows the body diode characteristics of the MSC035SMA170S device. TJ= 25 °C unless
otherwise specied.
Table 5 • Body Diode Characteristics
UnitMaxTypMinTest ConditionsCharacteristicSymbol
SD
rr
rr
RRM
Reverse recovery timet
VDD= 1200 V, dl/dt = –1900 A/µs
Typical Performance Curves
This section shows the typical performance curves of the MSC035SMA170S device.
V3.7ISD= 30 A, VGS= 0 VDiode forward voltageV
V3.9ISD= 30 A, VGS= –5 V
ns42ISD= 50 A, VGS= –5 V,
nC510Reverse recovery chargeQ
A18Reverse recovery currentI
Figure 1 • Drain Current vs. V
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Figure 2 • Drain Current vs. V
DS
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Device Specications
Figure 3 • Drain Current vs. V
DS
Figure 5 • RDS(on) vs. Junction Temperature
Figure 4 • Drain Current vs. V
DS
Figure 6 • Gate Charge Characteristics
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Figure 7 • Capacitance vs. Drain-to-Source Voltage
Figure 9 • IDMvs. VDS3rdQuadrant Conduction
Figure 8 • IDM vs. Gate-to-Source Voltage
Figure 10 • IDMvs. VDS3rdQuadrant Conduction
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Figure 11 • Threshold Voltage vs. Junction Temp.
Figure 13 • Switching Energy Eoff vs. VDS& I
D
Figure 12 • Switching Energy Eon vs. VDSand I
Figure 14 • Switching Energy vs. Rg
D
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Figure 15 • Switching Energy vs. T
J
Figure 17 • Switching Energy Eoff vs. VDSand I
Figure 16 • Switching Energy Eon vs. VDSand I
Figure 18 • Switching Energy vs. Rg
D
D
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Figure 19 • Switching Energy vs. T
J
Figure 21 • Maximum Transient Thermal Impedance
Figure 20 • Forward Safe Operating Area
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Package Specication
Package Specication
This section shows the package specication of the MSC035SMA170S device.
Package Outline Drawing
The following gure illustrates the TO-268 package drawingfor the MSC035SMA170S device. The dimensions
in the gure below are in millimeters and (inches).
Figure 22 • Package Outline Drawing
The following table shows the TO-268 dimensions and should be used in conjunction with the package
outline drawing.
Table 6 • TO-268 Dimensions
Max (in.)Min (in.)Max (mm)Min (mm)Symbol
0.2010.1935.104.90A
0.6380.62416.2015.85B
0.7520.73619.1018.70C
0.0490.0391.251.00D
0.5510.54314.0013.80E
0.5350.52413.6013.30F
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Package Specication
Max (in.)Min (in.)Max (mm)Min (mm)Symbol
0.1140.1062.902.70G
0.0570.0451.451.15H
0.0870.0772.211.95I
0.0550.0371.400.94J
0.1060.0942.702.40K
0.0240.0160.600.40L
0.0630.0571.601.45M
0.0070.0000.180.00N
0.5000.48812.7012.40O
0.215 BSC (nom.)5.45 BSC (nom.)P
GateTerminal 1
DrainTerminal 2
SourceTerminal 3
DrainTerminal 4
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050-7771 | April 2020 | Released
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