Datasheet MSA-9970 Datasheet (HP)

Page 1
Cascadable Silicon Bipolar MMIC␣ Amplifier
Technical Data
MSA-9970

Features

• Open Loop Feedback Amplifier
• Performance Flexibility with User Selected External Feedback for: Broadband Minimum
Ripple Amplifiers Low Return Loss Amplifiers Negative Gain Slope Amplifiers
• Usable Gain to 6.0 GHz
• 16.0 dB Typical Open Loop Gain at 1.0 GHz
• 14.5 dBm Typical P
1dB
at
1.0␣ GHz
• Hermetic Gold-ceramic Microstrip Package
The MSA-9970 is a high perfor­mance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic high reliability package. This MMIC is designed with high open loop gain and is intended to be used with external resistive and reactive feedback elements to create a variety of special purpose gain blocks.
Applications include very broad­band, minimum ripple amplifiers with extended low frequency performance possible through the use of a high valued external feedback blocking capacitor; extremely well matched (–20 dB return loss) amplifiers; and negative gain slope amplifiers for flattening MMIC cascades.

Typical Biasing Configuration

USER SELECTABLE
C
f
R
f
R
bias

70 mil PackageDescription

The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metalli­zation to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.
V
10 V
CC
MAX
,
RFC (Optional)
C
block
IN
4
3
MSA
1
2
Vd = 7.8 V
C
block
OUT
6-489
5965-9668E
Page 2

MSA-9970 Absolute Maximum Ratings

Parameter Absolute Maximum
Device Current 80 mA Power Dissipation RF Input Power +13 dBm
Junction Temperature 200°C Storage Temperature –65°C to 200°C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
3. Derate at 6.7 mW/° C for T
4. The small spot size of this technique results in a higher, though more
= 25°C.
CASE
accurate determination of θ
MENTS section “Thermal Resistance” for more information.
[2,3]
750 mW
> 88° C.
C
than do alternate methods. See MEASURE-
jc
[1]
Thermal Resistance
θjc = 150°C/W
[2,4]
:

Electrical Specifications

Symbol Parameters and Test Conditions: Id = 35 mA, Z
G
P
Power Gain
[2]
(|S21|2) f = 0.1 GHz dB 17.5
[1]
, T
A
= 25° C
= 50 Units Min. Typ. Max.
O
f = 1.0 GHz 14.5 16.0 17.5 f = 4.0 GHz 8.0 9.0 10.0
P
IP
V
1 dB
3
d
Output Power at 1 dB Gain Compression
Third Order Intercept Point
[2]
Device Voltage V 7.0 7.8 8.6
[2]
f = 1.0 GHz dBm 14.5
f = 1.0 GHz dBm 25.0
dV/dT Device Voltage Temperature Coefficient mV/°C –16.0
Notes:
1. The recommended operating current range for this device is 25 to 45 mA. Typical performance as a function of current is on the following page.
2. Open loop value. Adding external feedback will alter device performance.
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Page 3
MSA-9970 Typical Scattering Parameters (Z
G
p
(dB)G
p
(dB)
G
p
(dB)
0.3.05 0.1 0.5 1.0 3.0 6.0
FREQUENCY (GHz) FREQUENCY (GHz)
Figure 1. Open Loop Power Gain vs. Frequency, I
d
= 35 mA.
0.20.1 0.3 0.5 1.0 2.0 4.0
Figure 3. Open Loop Output Power at 1 dB Gain Compression vs. Frequency.
0
3
6
9
12
15
18
21
7
9
11
15
13
19
17
Figure 4. Open Loop Power Gain vs. Current.
5
10
15
20
–55 +25–25 +125+85
P
1 dB
(dBm)
P
1 dB
(dBm)
TEMPERATURE (°C)
2046108
V
d
(V)
Figure 2. Device Current vs. Voltage.
0
10
20
30
50
40
I
d
(mA)
TC = +125°C T
C
= +25°C
TC = –55°C
Figure 5. Open Loop Output Power at 1 dB Gain Compression and Open Loop Power Gain vs. Case Temperature, f=1.0 GHz, I
d
= 35 mA.
13
14
15
16
17
Id = 45 mA
Id = 35 mA
Id = 25 mA
2010 30 40 50
I
d
(mA)
0.1 GHz
1.0 GHz
4.0 GHz
P
1 dB
G
p
Freq.
S
11
S
21
= 50 , TA = 25° C, I
O
S
12
S
= 35 mA)
d
22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang k
0.02 .89 –1 17.5 7.51 179 –37.2 .014 4 .93 –1 1.01
0.05 .90 –3 17.5 7.47 177 –35.6 .017 34 .92 –3 .83
0.1 .90 –6 17.4 7.45 174 –33.2 .022 43 .93 –6 .70
0.2 .89 –12 17.4 7.43 168 –29.6 .033 61 .93 –13 .39
0.4 .87 –24 17.2 7.27 156 –24.4 .061 63 .91 –27 .24
0.6 .85 –36 17.0 7.06 145 –20.8 .091 58 .90 –40 .21
0.8 .82 –47 16.6 6.78 134 –18.8 .115 52 .87 –53 .21
1.0 .79 –59 16.2 6.49 124 –17.0 .141 44 .84 –66 .24
1.5 .72 –86 15.3 5.79 100 –14.6 .186 29 .74 –96 .28
2.0 .65 –113 14.2 5.10 77 –13.4 .215 16 .64 –123 .34
2.5 .59 –133 13.0 4.45 61 –12.9 .227 7 .57 –143 .39
3.0 .54 –155 11.6 3.79 42 –12.5 .236 –3 .51 –163 .46
3.5 .53 –174 10.3 3.28 26 –12.4 .239 –14 .45 178 .53
4.0 .52 168 9.2 2.87 10 –12.5 .238 –22 .39 164 .59
4.5 .53 152 8.0 2.51 –4 –12.6 .234 –30 .34 155 .66
5.0 .55 140 6.9 2.21 –17 –12.8 .228 –37 .31 153 .72
5.5 .55 130 5.8 1.94 –31 –13.2 .220 –44 .30 154 .80
6.0 .55 121 4.6 1.70 –43 –13.6 .209 –48 .32 157 .88
6.5 .56 114 3.5 1.50 –53 –13.8 .203 –54 .37 158 .94
7.0 .56 107 2.6 1.34 –63 –14.0 .201 –59 .42 157 .97
A model for this device is available in the DEVICE MODELS section.
Typical Performance, T
(unless otherwise noted)
= 25° C
A
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Page 4

70 mil Package Dimensions

.040
1.02 42GROUND
RF OUTPUT
RF INPUT
AND BIAS
.020 .508
1
.004 ± .002
.10 ± .05
GROUND
.070
1.70
.495 ± .030
12.57 ± .76
3
Notes: (unless otherwise specified)
1. Dimensions are
2. Tolerances in .xxx = ± 0.005 mm .xx = ± 0.13
.035
.89
in
mm
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