The MSA4709A is designed to provide BSH functions and to meet PABX transmission performance
requirements.
This device provides two-wire to four-wire conversion function (Hybrid).
FEATURES
• B (Battery feed), S (Supervision), and H (Hybrid) functions integrated on chip.
• Design to meet Central Office and PABX quality transmission requirements.
• All transmission performance parameters can be externally programmable.
• Free from parasitic SCR's using dielectric isolation technology.
• Size and weight reduction over conventional approaches.
4NBThe base drive output for the NPN Darlington transistor.
5RSORelay driver current sink terminal.
6CNBattery noise rejection capacitor input. This capacitor value is 1 mF (60V).
7RYAC performance adjusting resistor RY input.
8CDC
9RSIRelay driver current source terminal.
10RBRing-Trip filtering capacitor input (RING).
11RGRing-Trip filtering capacitor input (TIP).
12V
134WR
14BNBalancing network drive output.
15ZRReceive gain adjust and frequency compensation input.
EE
The Ring voltage sensing input. This input is high impedance (apr. 37 kW), and is
connected to the built-in over voltage protection circuit.
The Ring current sensing input is connected to the emitter of NPN Darlington transistor
and the power resistor REA.
AC high impedance providing capacitor Cdc input and constant current feed at the short
line adjusting zener diode input. This capacitor value is 1 mF (15V).
–5 V input.
Receive input and is connected to the negative input of the built-in buffer operational
amplifier.
Output of both the fault current detector and loop current detector. This output is opencollector with a built-in pull-up resistor. (apr. 10 kW).
16SCN
ConditionSEL = "H"SEL = "L"
• ON-HookHH
• OFF-HookLH
• Dial pulse: breakHH
• Dial pulse: makeLH
• RING TRIPLH
• Ground/Battery faultLL
4/11
Page 5
¡ SemiconductorMSA4709A
Pin No.NameDescription
17SEL
18CDPDial pulse shaping capacitor input.
19ILTip to Ring constant loop current determination resistor input.
20VBS
21BF
22RIRelay driver control input. RI = "H" is Driver "ON"
23V
CC
24ZX
25CB
26GGround input.
27PBThe base drive output for the PNP Darlington power transistor.
28PE
29B
30NCNo connection
SCN output information select control input. At SEL = "L", SCN Indicates only ground/
battery fault condition.
Supply voltage selection terminal.
V
= VCC (–24 V), VBS = G (–48 V).
BS
Battery-feed mode control input. A logic level "H" switches off both the Ring and Tip
current drive amp. and presents a high impedance to the line. (apr. 80 kW).
+5 V input
2 wire terminating impedance compornent Zx input. This pin has a low input
impedance.
Compensation capacitor input.
This capacitor value is 4700 pF(35V).
The Tip current sensing input is connected to the emitter of the PNP Darlington power
transister and the power resistor REB.
The Tip voltage sensing input. This input is high impedance (apr. 37 kW) and is
connected to the built-in over voltage protection circuit.
5/11
Page 6
¡ SemiconductorMSA4709A
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C)
ParameterUnit
SymbolCondition
VBS = G
V
BB
Power Supply Voltage
CC
EE
IN
RD
op
STG
VBS = V
—–0.3 to +7.0V
—–7.0 to +0.3V
—–0.3 to VCC + 0.3V
VRI = H–30I
—0 to 80T
—–55 to 150T
RECOMMENDED OPERATING CONDITIONS
ParameterMax. Unit
Power Supply Voltage
Loop Resistance
SymbolCondition
VBS = G
V
BB
CC
EE
R
L
CC
CC
Rating
–53.0 to +0.3
–30.0 to +0.3
Typ.Min.
–53
–30VBS = V
–48–43
–24–21.6
+4.75—+5+5.25V
–5.25—–5–4.75V
0VBB = –48 V—2000
0VBB = –24 V—600
0——70TaOperating Ambient Temperature°C
V
VDigital Input Voltage
mARelay Driver Current
°COperating Temperature
°CStorage Temperature
V
W
6/11
Page 7
¡ SemiconductorMSA4709A
ELECTRICAL CHARACTERISTICS
DC Characteristics
(I
= 30 mA, VBB = –24/–48 V, VCC = 5 V, VEE = –5 V, Ta = 25°C)
L
ParameterMax. Unit
Power Supply Current
Power Dissipation
Loop CurrentmA
SymbolCondition
I
BB
CC
EE
BB
CC
EE
I
BB
CC
EE
BB
CC
EE
VBB = –24 V
ON-HOOK
V
= –24 V
BB
OFF-HOOK
V
= –48 V
BB
ON-HOOK
V
= –48 V
BB
OFF-HOOK
VBB = –24 V
ON-HOOK
V
= –24 V
BB
OFF-HOOK
V
= –48 V
BB
ON-HOOK
V
= –48 V
BB
OFF-HOOK
RSI-RSO
I
= 30 mARelay Driver Output VoltageV
RSI-RSO
—
—4.06.0I
—11.5I
—
—5.48.1I
—1.21.8I
—
—4.06.0I
—11.5I
—
—6.19.2I
—1.21.8I
—70100Pds24
—130200Pd24
—100150Pds48
—280420Pd48
263034IL50RL = 50 W
263034IL400RL = 400 W
———IL1KRL = 1 kW
–3—1.2V
Typ.Min.
1.72.6
mA
3.76.2I
1.52.3
mA
5.07.5I
mW
7/11
Page 8
¡ SemiconductorMSA4709A
AC Characteristics
( V
= –24/–48 V, VCC = 5 V, VEE = –5 V, Ta = 25°C )
BB
ParameterMax. Unit
Transmit &
Receive Gain
Insertion Loss
Variety
Idel Channel Noise
Signal to Distortion
Ratio
Longitudinal
Balance
AC Induction
Tolerance
Power Supply
Rejection Ratio
2WÆ4W
4WÆ2W
2WÆ4W
4WÆ2W
2W
4W
2WÆ4W
4WÆ2W
2W
4W
2WÆ4W
4WÆ2W
VBBÆ2W
VCCÆ2W
VEEÆ2W
VBBÆ4W
VCCÆ4W
VEEÆ4W
SymbolCondition
G
DL
SN
LB
NI
24
42
24
42
2
4
24
42
2W
4W
= 0 dBm0
V
i
f = 1 kHz
f = 0.3 to 3.4 kHz
Vi = –55 to +3 dBm0
Psohometric Filter
f = 1 kHz
Vi = 0 dBm0
f = 0.3 kHz to 3.4 kHz
f = 0.3 kHz to 3.4 kHz
f = 0.3 kHz to 3.4 kHz
I
AC24
AC42
2
2
2
4
4
4
= 12.8 mArms
I
AC
Vi = 0 dBm0
f = 0.3 kHz to 3.4 kHz
Vin = 24.5 mVrms
f = 0.3 kHz to 3.4 kHz
Vin = 24.5 mVrms
—
—–4.0—G
–0.1
–0.1—0.1DL
—
——–81NI
53
53——SN
40
40——LB
20
23
53
53——I
20——LB
20——LC
20——LE
20——LB
20——LC
20——LE
Typ.Min.
4.0—
—0.1
—–81
——
——
——LMReturn LossdB
——LRTranshybrid LossdB
——
dB
dB
dBm0P
dBP
dB
dB
P
dB
dB
8/11
Page 9
¡ SemiconductorMSA4709A
APPLICATION CIRCUIT
•VBB : –48 V
• Loop Current IL : 30 mA
• Equivalent Terminal Impedance : 600W + 1mF
TIP
RING
750W
(*3)
r
1
(*6)
r
1
750W
V
BB
510k
(*5)
51W
(*1)
(*1)
51W
(*5)
V
BB
(*2)
R1
V
V
BB
–
+
2.2k
2.2k
or V
BB
EE
(*4)
1m
RBVBSVCCVEEIL
GCDC
PE
PB
BBN
AZR
NB
NE
V
BB
RG
RSI
RSO
RIBFSELSCN
+5V –5V
MSA4709A
(Controller)
27k
RY
ZX
4WR
CDP
CB
CN
1m
–+
4.7k
0.028m
0.028m
2.7k
1m
–+
1m
21k
42k
V
BB
187k
12k
4700pF
GSX
AIN–
AIN+
MSM6999
AOUT+
CODEC
PCM
OUT
PCM
FHW
IN
BHW
750
V
CC
R1
RSI
RSO
RI
TIP
RING
r
1
750W
V
Fig. 1Fig. 2
BB
510k
+
1m
–
RG
RB
V
BB
9/11
Page 10
¡ SemiconductorMSA4709A
Notes:*1. Use heat sinks required for Darlinton-connected power transistors.
*2. This diagram indicates that VBB or VEE (negative supply) is used for driving the
relay, but a positive supply, such as VEE indicated in Fig. 2, can also be used.
*3. This diagram indicates that the ring trip circuit consists of the RING line connected
to ground through the riging current source and the TIP line connected to the
battery (VBB), but the ring trip circuit can also be configured, using the RG pin
indicated in Fig. 2, by the RING line connected to the battery through the ringing
current source and the TIP line connected to ground.
*4. This diagram indicates VBB=–48V. If –24V is used for VBB, connect the VBS pin to
VCC and change the ring trip filtering constants from 510 kW plus 1 mF to 150 kW plus
33 mF.
*5. Use a resistor with precision of 0.1% or better.
*6. Connect additional circuits for suppressing or absorbing surge and noise caued by
relay contacts.
Battery Feed Characteristics
40
30
(mA)
L
IL = 30 mA
20
Loop Current I
10
0
= –48V
V
BB
= 40 mA
I
L
12
Loop Resistance RL (kW)
40
30
(mA)
L
20
Loop Current I
10
0
Loop Resistance RL (kW)
V
= –24V
BB
10.51.5
10/11
Page 11
¡ SemiconductorMSA4709A
PACKAGE DIMENSIONS
(Unit : mm)
SDIP30-P-400-1.78
Package material
Lead frame material
Pin treatment
Solder plate thickness
Package weight (g)
Epoxy resin
42 alloy
Solder plating
5 mm or more
1.80 TYP.
11/11
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