Datasheet MSA-0236-TR1, MSA-0235, MSA-0236-BLK Datasheet (HP)

Cascadable Silicon Bipolar
MMIC␣ Amplifiers

Technical Data

MSA-0235, -0236

Features

• Cascadable 50 Ω Gain Block

• 3 dB Bandwidth:

DC to 2.7 GHz

purpose 50 Ω gain block. Typical

applications include narrow and
broad band IF and RF amplifiers
in industrial and military applica­tions.

• 12.0 dB Typical Gain at

1.0␣ GHz

• Unconditionally Stable
(k>1)

• Cost Effective Ceramic
Microstrip Package

The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli­zation to achieve excellent
performance, uniformity and

Description

The MSA-0235 is a high perfor­mance silicon bipolar Monolithic
Microwave Integrated Circuit

reliability. The use of an external
bias resistor for temperature and
current stability also allows bias

flexibility.
(MMIC) housed in a cost effective,
microstrip package. This MMIC is
designed for use as a general

Available in cut lead version

(package 36) as MSA-0236.

Typical Biasing Configuration

R

bias

35 micro-X Package

,

MAX

Note:

1. Short leaded 36 package available

upon request.

V

> 7 V

CC

[1]

RFC (Optional)

C

block

IN OUT

4

3

MSA

1

2

C

block

= 5 V

V

d

5965-9697E

6-274

MSA-0235, -0236 Absolute Maximum Ratings

Parameter Absolute Maximum

Device Current 60 mA
Power Dissipation
RF Input Power +13 dBm

Junction Temperature 200°C

Storage Temperature

Notes:

1. Permanent damage may occur if any of these limits are exceeded.

2. T

3. Derate at 6.9 mW/° C for T

4. Storage above +150°C may tarnish the leads of this package making it

5. The small spot size of this technique results in a higher, though more

= 25°C.

CASE

difficult to solder into a circuit.

accurate determination of θ

MENTS section “Thermal Resistance” for more information.

[2,3]

[4]

C

325 mW

–65 to 200° C

> 153° C.

than do alternate methods. See MEASURE-

jc

[1]

Thermal Resistance

θjc = 145°C/W

[2,5]

:

Electrical Specifications

Symbol Parameters and Test Conditions: Id = 25 mA, Z

G

P

∆G

f

3 dB

VSWR

Power Gain (|S21|2) f = 0.1 GHz dB 11.5 12.5 13.5

Gain Flatness f = 0.1 to 1.6 GHz dB ±0.6 ± 1.0

P

3 dB Bandwidth GHz 2.7

Input VSWR f = 0.1 to 3.0 GHz 1.2:1

[1]

, T

A

= 25° C

= 50 Ω Units Min. Typ. Max.

O

Output VSWR f = 0.1 to 3.0 GHz 1.4:1

NF 50 Ω Noise Figure f = 1.0 GHz dB 6.5

P

IP

t

V

1 dB

3

D

d

Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 4.5

Third Order Intercept Point f = 1.0 GHz dBm 17.0

Group Delay f = 1.0 GHz psec 125

Device Voltage V 4.5 5.0 5.5

dV/dT Device Voltage Temperature Coefficient mV/°C –8.0

Note:

1. The recommended operating current range for this device is 18 to 40 mA. Typical performance as a function of current

is on the following page.

Part Number Ordering Information

Part Number No. of Devices Container

MSA-0235 10 Strip

MSA-0236-BLK 100 Antistatic Bag

MSA-0236-TR1 1000 7" Reel

For more information refer to PACKAGING section, “Tape and Reel
Packaging for Semiconductor Devices.”

6-275

MSA-0235, -0236 Typical Scattering Parameters (Z

Freq.

S

11

S

21

= 50 Ω, TA = 25° C, I

O

S

12

S

= 25 mA)

d

GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang

0.1 .08 170 12.6 4.25 176 –18.6 .118 2 .16 –6

0.2 .08 163 12.5 4.23 171 –18.5 .119 2 .15 –10

0.4 .08 147 12.5 4.19 161 –18.4 .120 4 .15 –21

0.6 .08 130 12.4 4.14 152 –18.3 .121 4 .15 –30

0.8 .07 112 12.2 4.09 143 –18.1 .125 7 .15 –39

1.0 .07 91 12.1 4.02 134 –18.0 .126 10 .15 –46

1.5 .06 47 11.6 3.80 112 –17.3 .137 11 .13 –66

2.0 .03 –1 11.0 3.53 91 –16.3 .153 10 .11 –89

2.5 .03 –115 10.2 3.24 75 –15.4 .169 12 .09 –111

3.0 .09 –157 9.3 2.92 57 –15.1 .176 8 .08 –127

3.5 .16 –175 8.3 2.60 39 –14.4 .190 3 .09 –129

4.0 .20 173 7.2 2.29 23 –14.1 .198 –2 .11 –118

5.0 .27 136 5.2 1.81 –6 –13.5 .211 –11 .15 –117

6.0 .41 94 3.2 1.44 –33 –13.5 .212 –24 .11 –148

A model for this device is available in the DEVICE MODELS section.

22

Typical Performance, T

(unless otherwise noted)

14

12

Gain Flat to DC

10

8

(dB)

p

G

6

4

2

0

0.1 0.3 0.5 1.0 3.0 6.0
FREQUENCY (GHz)

Figure 1. Typical Power Gain vs.
Frequency, TA = 25°C, Id = 25 mA.

13
12

(dB)

p

G

11

8
7

6
5

4

(dBm)

1 dB

3

P

2

–55 –25 +25 +85 +125

TEMPERATURE (°C)

Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Mounting Surface Temperature,
f=1.0 GHz, Id = 25 mA.

G

P

NF

P

1 dB

= 25° C

A

8
7
6

5

NF (dB)

4
3

2

40

TC = +125°C
TC = +25°C

30

TC = –55°C

20

(mA)

d

I

10

0

0 234561

Vd (V)

Figure 2. Device Current vs. Voltage.

12

Id = 40 mA

10

8

(dBm)

6

1 dB

P

4

Id = 25 mA

2

Id = 18 mA

0

0.1 0.2 0.3 0.5 2.01.0 4.0 0.1 0.2 0.3 0.5 2.01.0 4.0
FREQUENCY (GHz)

Figure 5. Output Power at 1 dB Gain

14

12

10

(dB)

p

G

8

Id (mA)

0.1 GHz

0.5 GHz

1.0 GHz

2.0 GHz

6

4

15 25 30 403520

Figure 3. Power Gain vs. Current.

7.5

7.0

6.5

NF (dB)

6.0

5.5

Id = 18 mA
Id = 25 mA
Id = 40 mA

FREQUENCY (GHz)

Figure 6. Noise Figure vs. Frequency.

Compression vs. Frequency.

6-276

35 micro-X Package Dimensions

4

GROUND

RF OUTPUT
AND BIAS

A02

2

GROUND

Notes:
(unless otherwise specified)

1. Dimensions are

.100

2.54

2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13

.057 ± .010

1.45 ± .25

.085

2.15

RF INPUT

13

.020
.508

.083

2.11

in

mm

DIA.

.022

.56

.455 ± .030

11.54 ± .75
.006 ± .002

.15 ± .05

6-277