Datasheet MSA-0204 Datasheet (HP)

Cascadable Silicon Bipolar
MMIC␣ Amplifier

Technical Data

MSA-0204

Features

• Cascadable 50 Ω Gain Block

• 3 dB Bandwidth:

DC to 1.8 GHz

• 11.0 dB Typical Gain at

designed for use as a general
purpose 50 Ω gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in commercial and industrial
applications.

1.0␣ GHz

• Unconditionally Stable
(k>1)

• Low Cost Plastic Package

The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-

Description

The MSA-0204 is a high perfor­mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost
plastic package. This MMIC is

zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.

Typical Biasing Configuration

R

bias

04A Plastic Package

,

MAX

V

> 7 V

CC

RFC (Optional)

C

block

IN OUT

4

3

MSA

1

2

C

block

= 5 V

V

d

5965-9696E

6-270

MSA-0204 Absolute Maximum Ratings

Parameter Absolute Maximum

Device Current 60 mA
Power Dissipation

[2,3]

325 mW

RF Input Power +13 dBm
Junction Temperature 150°C
Storage Temperature –65 to 150° C

[1]

Thermal Resistance

θjc = 90°C/W

Notes:

1. Permanent damage may occur if
any of these limits are exceeded.

2. T

3. Derate at 11.1 mW/° C for T

CASE

= 25°C.

121°C.

4. See MEASUREMENTS section
“Thermal Resistance” for more
information.

Electrical Specifications

[1]

, T

A

= 25° C

Symbol Parameters and Test Conditions: Id = 25 mA, ZO = 50 Ω Units Min. Typ. Max.

G

P

Power Gain (|S21|2) f = 0.1 GHz dB 12.5

f = 0.5 GHz 10.0 12.0
f = 1.0 GHz 11.0

∆G
f

3 dB

VSWR

Gain Flatness f = 0.1 to 1.4 GHz dB ±1.0

P

3 dB Bandwidth GHz 1.8
Input VSWR f = 0.1 to 3.0 GHz 1.3:1
Output VSWR f = 0.1 to 3.0 GHz 1.3:1

NF 50 Ω Noise Figure f = 1.0 GHz dB 6.5
P
IP
t
V

1 dB

3

D

d

Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 4.5
Third Order Intercept Point f = 1.0 GHz dBm 17.0
Group Delay f = 1.0 GHz psec 150
Device Voltage V 4.5 5.0 5.5

dV/dT Device Voltage Temperature Coefficient mV/°C –8.0

Note:

1. The recommended operating current range for this device is 18 to 40 mA. Typical performance as a function of current
is on the following page.

[2,4]

C

:

>

6-271

MSA-0204 Typical Scattering Parameters (Z

Freq.

S

11

S

21

= 50 Ω, TA = 25° C, I

O

S

12

= 25 mA)

d

S

GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang

0.1 .12 170 12.5 4.20 174 –18.5 .119 2 .12 –7

0.2 .12 160 12.4 4.16 168 –18.5 .119 4 .12 –14

0.4 .11 140 12.2 4.05 156 –18.1 .124 6 .12 –29

0.6 .11 121 11.9 3.93 144 –17.9 .127 8 .12 –42

0.8 .10 104 11.6 3.78 134 –17.6 .132 12 .12 –52

1.0 .10 84 11.2 3.62 123 –17.0 .142 14 .13 –61

1.5 .09 42 10.2 3.22 99 –16.1 .157 16 .12 –79

2.0 .07 16 9.1 2.86 77 –14.8 .181 15 .11 –96

2.5 .05 17 8.2 2.57 63 –13.9 .202 16 .09 –115

3.0 .02 96 7.3 2.32 46 –13.2 .220 13 .08 –141

3.5 .08 112 6.5 2.12 29 –12.4 .239 7 .09 –167

4.0 .14 100 5.7 1.93 12 –11.8 .258 0 .11 171

5.0 .35 72 4.0 1.58 –22 –11.2 .276 –15 .17 120

6.0 .59 51 1.6 1.20 –54 –11.3 .272 –33 .32 80

A model for this device is available in the DEVICE MODELS section.

22

Typical Performance, T

A

(unless otherwise noted)

14

12

Gain Flat to DC

10

8

(dB)

p

G

6

4

2

0

0.1 0.3 0.5 1.0 3.0 6.0
FREQUENCY (GHz)

Figure 1. Typical Power Gain vs.
Frequency, TA = 25°C, Id = 25 mA.

12

(dB)

11

p

G

10

8

7

6

5

(dBm)

4

1 dB

P

3

–25 +250 +85+55

TEMPERATURE (°C)

Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 1.0 GHz,
Id=25mA.

G

P

NF

P

1 dB

= 25° C

8

7

6

NF (dB)

5

4

3

40

TC = +85°C
TC = +25°C

30

TC = –25°C

20

(mA)

d

I

10

0

0 234 561

Vd (V)

Figure 2. Device Current vs. Voltage.

12

Id = 40 mA

10

8

(dBm)

6

1 dB

P

4

Id = 25 mA

2

Id = 18 mA

0

0.1 0.2 0.3 0.5 2.01.0 4.0 0.1 0.2 0.3 0.5 2.01.0 4.0
FREQUENCY (GHz)

Figure 5. Output Power at 1 dB Gain

14

12

10

(dB)

p

G

8

Id (mA)

0.1 GHz

0.5 GHz

1.0 GHz

2.0 GHz

6

4

15 25 30 403520

Figure 3. Power Gain vs. Current.

7.5
Id = 18 mA

Id = 25 mA
Id = 40 mA

7.0

6.5

NF (dB)

6.0

5.5

FREQUENCY (GHz)

Figure 6. Noise Figure vs. Frequency.

Compression vs. Frequency.

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04A Plastic Package Dimensions

)

12.39 ± 0.76

(0.488 ± 0.030)

4

GROUND

RF INPUT

0.76 (0.030)

2.54 ± 0.25

(0.100 ± 0.010)

1

4.29

(0.169)

0.51

(0.020)

DIMENSIONS ARE IN MILLIMETERS (INCHES).

2

1

2

3.68

(0.145)

GROUND

0.76 (0.030)
DIA.

0.96 (0.038)

RF OUTPUT
& BIAS

3

NOTES:
(UNLESS OTHERWISE SPECIFIED)

1. DIMENSIONS ARE IN
MILLIMETERS (INCHES)

2. TOLERANCES
mm .XX = ± 0.13
in .XXX = ± 0.005

0.20 ± 0.050

(0.008 ± 0.002

6-273