Single Supply 3.0 V to 44 V,
Low Power Operational
Amplifiers
Quality bipolar fabrication with innovative design concepts are
employed for the MC33171/72/74 series of monolithic operational
amplifiers. These devices operate at 180 mA per amplifier and offer 1.8
MHz of gain bandwidth product and 2.1 V/ms slew rate without the use
of JFET device technology. Although this series can be operated from
split supplies, it is particularly suited for single supply operation, since
the common mode input voltage includes ground potential (VEE).
With a Darlington input stage, these devices exhibit high input
resistance, low input offset voltage and high gain. The all NPN output
stage, characterized by no deadband crossover distortion and large
output voltage swing, provides high capacitance drive capability,
excellent phase and gain margins, low open loop high frequency
output impedance and symmetrical source/sink AC frequency
response.
The MC33171/72/74 are specified over the industrial/automotive
temperature ranges. The complete series of single, dual and quad
operational amplifiers are available in plastic as well as the surface
mount packages.
14
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8
1
8
1
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PDIP−8
P SUFFIX
CASE 626
SO−8
D, VD SUFFIX
CASE 751
PDIP−14
P, VP SUFFIX
CASE 646
Features
• Low Supply Current: 180 mA (Per Amplifier)
• Wide Supply Operating Range: 3.0 V to 44 V or ±1.5 V to ±22 V
• Wide Input Common Mode Range, Including Ground (V
EE
)
• Wide Bandwidth: 1.8 MHz
• High Slew Rate: 2.1 V/ms
• Low Input Offset Voltage: 2.0 mV
• Large Output Voltage Swing: −14.2 V to +14.2 V
(with ±15 V Supplies)
• Large Capacitance Drive Capability: 0 pF to 500 pF
• Low Total Harmonic Distortion: 0.03%
• Excellent Phase Margin: 60°
• Excellent Gain Margin: 15 dB
• Output Short Circuit Protection
• ESD Diodes Provide Input Protection for Dual and Quad
• Pb−Free Packages are Available
• NCV Prefix for Automotive and Other Applications Requiring Site
and Control Changes
SO−14
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ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 9 of this data sheet.
DEVICE MARKING INFORMATION
See general marking information in the device marking
section on page 10 of this data sheet.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
±22V
(Note 1)V
(Note 1)V
Indefinitesec
(Note 3)°C
+150°C
−65 to +150°C
DC ELECTRICAL CHARACTERISTICS (V
= +15 V, VEE = −15 V, RL connected to ground, TA = +25°C, unless otherwise noted.)
CC
CharacteristicsSymbolMinTypMaxUnit
Input Offset Voltage (VCM = 0 V)
VCC = +15 V, VEE = −15 V, TA = +25°C
VCC = +5.0 V, VEE = 0 V, TA = +25°C
VCC = +15 V, VEE = −15 V, TA = T
low
to T
high
(Note 3)
Average Temperature Coefficient of Offset Voltage
Input Bias Current (VCM = 0 V)
TA = +25°C
TA = T
low
to T
high
(Note 3)
Input Offset Current (VCM = 0 V)
TA = +25°C
TA = T
low
to T
high
(Note 3)
Large Signal Voltage Gain (VO = ±10 V, RL = 10 k)
TA = +25°C
TA = T
low
to T
high
(Note 3)
Output Voltage Swing
VCC = +5.0 V, VEE = 0 V, RL = 10 k, TA = +25°C
VCC = +15 V, VEE = −15 V, RL = 10 k, TA = +25°C
VCC = +15 V, VEE = −15 V, RL = 10 k, TA = T
low
VCC = +5.0 V, VEE = 0 V, RL = 10 k, TA = +25°C
VCC = +15 V, VEE = −15 V, RL = 10 k, TA = +25°C
VCC = +15 V, VEE = −15 V, RL = 10 k, TA = T
low
Output Short Circuit (TA = +25°C)
to T
to T
high
high
(Note 3)
(Note 3)
V
IO
DVIO/DT
I
IB
I
IO
A
VOL
V
OH
V
OL
I
SC
−
−
−
2.0
2.5
−
−10−
−
−
−
−
50
25
3.5
13.6
13.3
−
−
−
20
−
5.0
−
500
−
4.3
14.2
−
0.05
−14.2
−
4.5
5.0
6.5
100
200
20
40
−
−
−
−
−
0.15
−13.6
−13.3
Input Overdrive = 1.0 V, Output to Ground
Source
Sink
Input Common Mode Voltage Range
TA = +25°C
TA = T
low
to T
high
(Note 3)
V
ICR
3.0
15
5.0
27
VEE to (VCC −1.8)
VEE to (VCC −2.2)
−
−
Common Mode Rejection Ratio (RS ≤ 10 k), TA = +25°CCMRR8090−dB
Power Supply Rejection Ratio (RS = 100 W), TA = +25°C
Power Supply Current (Per Amplifier)
VCC = +5.0 V, VEE = 0 V, TA = +25°C
VCC = +15 V, VEE = −15 V, TA = +25°C
VCC = +15 V, VEE = −15 V, TA = T
low
1. Either or both input voltages must not exceed the magnitude of VCC or V
2. Power dissipation must be considered to ensure maximum junction temperature (TJ) is not exceeded.
3. MC3317xT
MC3317xV, NCV33172T
to T
(Note 3)
high
EE.
= −40°CT
low
= −40°CT
low
= +85°C
high
= +125°C
high
PSRR80100−dB
I
D
−
−
−
180
220
−
250
250
300
mV
mV/°C
nA
nA
V/mV
V
mA
V
mA
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3
MC33171, MC33172, MC33174, NCV33172
√
CO
O
O
O
G
G
AC ELECTRICAL CHARACTERISTICS (V
Characteristics
Slew Rate (Vin = −10 V to +10 V, RL = 10 k, CL = 100 pF)
AV +1
AV −1
= +15 V, VEE = −15 V, RL connected to ground, TA = +25°C, unless otherwise noted.)
CC
SymbolMinTypMaxUnit
SR
1.6
−
2.1
2.1
−
−
V/ms
Gain Bandwidth Product (f = 100 kHz)GBW1.41.8−MHz
Power Bandwidth
= +1.0 RL = 10 k, VO = 20 Vpp, THD = 5%
A
V
Phase Margin
RL = 10 k
RL = 10 k, CL = 100 pF
Gain Margin
RL = 10 k
RL = 10 k, CL = 100 pF
Equivalent Input Noise Voltage
BWp
f
m
A
m
e
n
−35−
−
−
−
−
60
45
15
5.0
−32−
−
−
−
−
nV/Hz
RS = 100 W, f = 1.0 kHz
Equivalent Input Noise Current (f = 1.0 kHz)I
Differential Input Resistance
Vcm = 0 V
Input CapacitanceC
Total Harmonic Distortion
THD
AV = +10, RL = 10 k, 2.0 Vpp ≤ VO ≤ 20 Vpp, f = 10 kHz
n
R
in
in
−0.2−
pA/ Hz√
−300−
−0.8−pF
−0.03−
Channel Separation (f = 10 kHz)CS−120−dB
Open Loop Output Impedance (f = 1.0 MHz)z
o
−100−
kHz
Deg
dB
MW
%
W
E (V)
−0.8
E RAN
LTA
−1.6
0
V
CC
VCC/V
EE
DVIO = 5.0 mV
= ±1.5 V to ± 22 V
−1.0
0
V
CC
VCC/VEE = ±5.0 V to ± 22 V
TA = 25°C
Source
DE V
−2.4
N M
MM
0.1
V
EE
0
−55−250255075100
V , INPUT
ICR
TA, AMBIENT TEMPERATURE (°C)
Figure 2. Input Common Mode Voltage Range
versus Temperature
12501.02.03.04.0
V, OUTPUT SATURATION VOLTAGE (V)
sat
1.0
Sink
V
0
EE
IL, LOAD CURRENT (±mA)
Figure 3. Split Supply Output Saturation
versus Load Current
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4
MC33171, MC33172, MC33174, NCV33172
3
0
20
10
VCC/VEE = ±15 V
0
RL = 10 k
V
= 0 V
out
−10
TA = 25°C
1 − Phase
, OPEN LOOP VOLTAGE GAIN (dB)
2 − Phase, CL = 100 pF
−20
3 − Gain
VOL
A
4 − Gain, CL = 100 pF
−30
100 k1.0 M10 M
f, FREQUENCY (Hz)
Phase
Margin
= 58°
1
= 15 dB
2
4
3
Figure 4. Open Loop Voltage Gain and
Phase versus Frequency
1.3
VCC/V
= ±15 V
1.2
GBW
1.1
1.0
0.9
EE
RL = 10 k
Gain
Margin
SR
120
140
160
180
200
220
70
60
50
40
30
20
m, PHASE MARGIN (DEGREES)
, EXCESS PAHSE (DEGREES)
10
φ
φ
0
1020501002005001.0 k
0
50 mV/DIV10 V/DIV
VCC/V
= ±15 V
fm
%
CL, LOAD CAPACITANCE (pF)
EE
A
= +1.0
VOL
RL = 10 k
DVO = 20 mV
TA = 25°C
pp
Figure 5. Phase Margin and Percent
Overshoot versus Load Capacitance
5.0 ms/DIV
VCC/VEE = ±15 V
VCM = 0 V
VO = 0 V
DIO = ±0.5 mA
TA = 25°C
70
60
50
40
30
20
%, PERCENT OVERSHOOT
10
0
GBW AND SR (NORMALIZED)
0.8
0.7
−55−250255075100125
TA, AMBIENT TEMPERATURE (°C)
Figure 6. Normalized Gain Bandwidth Product
and Slew Rate versus Temperature
140
VCC/VEE = ±15 V
AV = +1.0
120
RL = 10 k
CL = 100 pF
100
TA = 25°C
80
60
40
o
z , OUTPUT IMPEDANCE ()Ω
20
0
2002.0 k20 k200 k2.0 M05.010152025
AV = 1000
AV = 100
AV = 10AV = 1.0
f, FREQUENCY (Hz)
CC
D
I, I, POWER SUPPLY CURRENT (mA)
0
1.1
1. TA = −55°C
2. TA = 25°C
3. TA = 125°C
0.9
0.7
0.5
0.3
0.1
5.0 ms/DIV
Figure 7. Small and Large Signal
Transient Response
Quad
Dual
Single
VCC/VEE, SUPPLY VOLTAGE (±V)
1
2
3
1
2
3
1
2
3
Figure 8. Output Impedance and FrequencyFigure 9. Supply Current versus Supply Voltage
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