Datasheet MCP1700 Datasheet

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Page 1

MCP1700

GND V

OUT

MCP1700

GND V

OUT

MCP1700

3-Pin SOT-23 3-Pin SOT-89

321

GND V

INVOUT

MCP1700

3-Pin TO-92

Low Quiescent Current LDO

Features

• 1.6 µA Typical Quiescent Current

• Input Operating Voltage Range: 2.3V to 6.0V

• Output Voltage Range: 1.2V to 5.0V

• 250 mA Output Current for output voltages ≥ 2.5V

• 200 mA Output Current for output voltages < 2.5V

• Low Dropout (LDO) voltage

- 178 mV typical @ 250 mA for V

• 0.4% Typical Output Voltage Tolerance

• Standard Output Voltage Options:

- 1.2V, 1.8V, 2.5V, 3.0V, 3.3V, 5.0V

• Stable with 1.0 µF Ceramic Output capacitor

• Short Circuit Protection

• Overtemperature Protection

OUT

= 2.8V

Applications

• Battery-powered Devices

• Battery-powered Alarm Circuits

• Smoke Detectors

Detectors

•CO

• Pagers and Cellular Phones

• Smart Battery Packs

• Low Quiescent Current Voltage Reference

•PDAs

• Digital Cameras

• Microcontroller Power

General Description

The MCP1700 is a family of CMOS low dropout (LDO) voltage regulators that can deliver up to 250 mA of current while consuming only 1.6 µA of quiescent current (typical). The input operating range is specified from 2.3V to 6.0V, making it an ideal choice for two and three primary cell battery-powered applications, as well as single cell Li-Ion-powered applications.

The MCP1700 is capable of delivering 250 mA with only 178 mV of input to output voltage differential

= 2.8V). The output voltage tolerance of the

OUT

MCP1700 is typically ±0.4% at +25°C and ±3% maximum over the operating junction temperature range of -40°C to +125°C.

Output voltages available for the MCP1700 range from

1.2V to 5.0V. The LDO output is stable when using only 1 µF output capacitance. Ceramic, tantalum or aluminum electrolytic capacitors can all be used for input and output. Overcurrent limit and overtemperature shutdown provide a robust solution for any application.

Package options include the SOT-23, SOT-89 and TO-92.

Package Types

Related Literature

• AN765, “Using Microchip’s Micropower LDOs”, DS00765, Microchip Technology Inc., 2002

• AN766, “Pin-Compatible CMOS Upgrades to BiPolar LDOs”, DS00766, Microchip Technology Inc., 2002

• AN792, “A Method to Determine How Much Power a SOT23 Can Dissipate in an Application”, DS00792, Microchip Technology Inc., 2001

Page 2

MCP1700

OUT

GND

Error Amplifier

Voltage Reference

Over Current Over Temperature

MCP1700

GND

OUT

1 µF Ceramic

OUT

1 µF Ceramic

OUT

(2.3V to 3.2V)

1.8V

OUT

150 mA

Functional Block Diagrams

Typical Application Circuits

Page 3

MCP1700

1.0 ELECTRICAL

CHARACTERISTICS

† Notice: Stresses above those listed under “Maximum

Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the

Absolute Maximum Ratings †

............................................................................................+6.5V

All inputs and outputs w.r.t. .............(V

Peak Output Current ....................................Internally Limited

-0.3V) to (VIN+0.3V)

operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.

Storage temperature .....................................-65°C to +150°C

Maximum Junction Temperature................................... 150°C

Operating Junction Temperature...................-40°C to +125°C

ESD protection on all pins (HBM;MM)............... ≥ 4kV; ≥ 400V

DC CHARACTERISTICS

Electrical Characteristics: Unless otherwise specified, all limits are established for VIN=VR+1, I

=1µF (X7R), CIN=1µF(X7R), TA= +25°C.

OUT

Boldface type applies for junction temperatures, T

(Note 6) of -40°C to +125°C.

Parameters Sym Min Typ Max Units Conditions

Input / Output Characteristics

Input Operating Voltage V Input Quiescent Current I Maximum Output Current I

Output Short Circuit Current I

OUT_mA

OUT_SC

2.3 — 6.0 V Note 1 —1.6 4 µA IL=0mA, VIN=VR +1V

250 200

— —

mA For VR≥ 2.5V

For V

— 408 — mA VIN=VR+V, V

Current (peak current) measured 10 ms after short is applied.

Output Voltage Regulation V

Temperature Coefficient TCV

OUT

Line Regulation ΔV

OUT

Load Regulation ΔV

Dropout Voltage V

> 2.5V

Dropout Voltage V

< 2.5V

OUT/VOUT

IN-VOUT

Output Rise Time T

Output Noise e

Note 1: The minimum V

2: V

is the nominal regulator output voltage. For example: VR= 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, 5.0V. The

input voltage (V

3: TCV

OUT

= (V

temperature range. V

must meet two conditions: VIN≥ 2.3V and VIN ≥ (VR + 3.0%) +V

+ 1.0V); I

IN=VR

OUT-HIGH-VOUT-LOW

OUT-LOW

OUT

XΔVIN)

VR-3.0%

-2.0%

±0.4%VR+3.0%

+2.0%

V Note 2

— 50 — ppm/°C Note 3

-1.0 ±0.75 +1.0 %/V (V

-1.5 ±1.0 +1.5 %IL= 0.1 mA to 250 mA for VR≥ 2.5V

= 0.1 mA to 200 mA for VR< 2.5V

Note 4

— 178 350 mV IL= 250 mA, (Note 1, Note 5)

— 150 350 mV IL= 200 mA, (Note 1, Note 5)

— 500 — µs 10% VR to 90% VR VIN= 0V to 6V,

—3—µV/(Hz)

= 100 µA.

OUT

) *106 / (VR* ΔTemperature), V

OUT-HIGH

1/2

IL= 100 mA, f = 1 kHz, C

DROPOUT

= highest voltage measured over the

= lowest voltage measured over the temperature range.

4: Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output

voltage due to heating effects are determined using thermal regulation specification TCV

5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured

value with a V

+ 1V differential applied.

6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction

temperature and the thermal resistance from junction to air (i.e., T dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained

, TJ, θJA). Exceeding the maximum allowable power

junction temperatures above 150°C can impact the device reliability.

7: The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the

desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the ambient temperature is not significant.

= 100 µA,

LOAD

< 2.5V

OUT

+1)V ≤ VIN ≤ 6V

=50Ω resistive

OUT

=GND,

OUT

=1µF

Page 4

MCP1700

DC CHARACTERISTICS (CONTINUED)

Electrical Characteristics: Unless otherwise specified, all limits are established for VIN=VR+1, I

=1µF (X7R), CIN=1µF(X7R), TA= +25°C.

OUT

Boldface type applies for junction temperatures, T

(Note 6) of -40°C to +125°C.

Parameters Sym Min Typ Max Units Conditions

Power Supply Ripple Rejection Ratio

Thermal Shutdown Protection T

Note 1: The minimum V

2: V

is the nominal regulator output voltage. For example: VR= 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, 5.0V. The

input voltage (V

3: TCV

temperature range. V

OUT

= (V

OUT-HIGH-VOUT-LOW

PSRR — 44 — dB f = 100 Hz, C

must meet two conditions: VIN≥ 2.3V and VIN ≥ (VR + 3.0%) +V

+ 1.0V); I

IN=VR

= lowest voltage measured over the temperature range.

OUT-LOW

— 140 — °C VIN=VR+1, IL= 100 µA

= 100 µA.

OUT

) *106 / (VR* ΔTemperature), V

OUT-HIGH

= highest voltage measured over the

INAC

DROPOUT

4: Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output

voltage due to heating effects are determined using thermal regulation specification TCV

5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured

value with a V

+ 1V differential applied.

6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction

temperature and the thermal resistance from junction to air (i.e., T

, TJ, θJA). Exceeding the maximum allowable power

dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained junction temperatures above 150°C can impact the device reliability.

7: The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the

desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the ambient temperature is not significant.

= 100 µA,

LOAD

=1µF, IL=50mA,

OUT

=100mVpk-pk, CIN=0µF,

=1.2V

OUT

TEMPERATURE SPECIFICATIONS

Electrical Characteristics: Unless otherwise specified, all limits are established for V

= 1 µF (X7R), CIN=1µF (X7R), TA= +25°C.

OUT

Boldface type applies for junction temperatures, T

(Note 1) of -40°C to +125°C.

Parameters Sym Min Typ Max Units Conditions

Temperature Ranges

Specified Temperature Range T Operating Temperature Range T Storage Temperature Range T

-40 +125 °C

-65 +150 °C

Thermal Package Resistance

Thermal Resistance, SOT-23

—336—°C/W

— 230 — °C/W Typical FR4 4-layer Application

Thermal Resistance, SOT-89 θ Thermal Resistance, TO-92

— 52 — °C/W Typical, 1 square inch of copper

— 131.9 — °C/W

Note 1: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction

temperature and the thermal resistance from junction to air (i.e., T dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained

, TJ, θJA). Exceeding the maximum allowable power

junction temperatures above 150°C can impact the device reliability.

IN=VR

+1, I

LOAD

= 100 µA,

Minimum Trace Width Single Layer Board

EIA/JEDEC JESD51-751-7 4-Layer Board

Page 5

MCP1700

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

3.0

2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0

Input Voltage (V)

Quiescent Current (µA)

TJ = - 40°C

TJ = +25°C

TJ = +125°C

VR = 1.2V I

OUT

= 0 µA

0 25 50 75 100 125 150 175 200 225 250

Load Current (mA)

Ground Current (µA)

TJ = - 40°C

TJ = +25°C

TJ = +125°C

1.25

1.50

1.75

2.00

2.25

2.50

-40 -25 -10 5 20 35 50 65 80 95 110 125

Junction Temperature (°C)

Quiscent Current (µA)

VR = 5.0V

VR = 2.8V

VR = 1.2V

VIN = VR + 1V I

OUT

= 0 µA

1.190

1.192

1.194

1.196

1.198

1.200

1.202

1.204

1.206

2 2.5 3 3.5 4 4.5 5 5.5 6

Input Voltage (V)

Output Voltage (V)

TJ = - 40°C

TJ = +25°C

TJ = +125°C

VR = 1.2V I

OUT

= 0.1 mA

1.77

1.775

1.78

1.785

1.79

1.795

1.8

2 2.5 3 3.5 4 4.5 5 5.5 6

Input Voltage (V)

Output Voltage (V)

TJ = - 40°C

TJ = +25°C

TJ = +125°C

VR = 1.8V I

OUT

= 0.1 mA

2.778

2.780

2.782

2.784

2.786

2.788

2.790

2.792

2.794

2.796

2.798

2.800

3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 5.7 6

Input Voltage (V)

Output Voltage (V)

TJ = - 40°C

TJ = +25°C

TJ = +125°C

VR = 2.8V I

OUT

= 0.1 mA

2.0 TYPICAL PERFORMANCE CURVES

Note: The graphs and tables provided following this note are a statistical summary based on a limited number of

samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

Note: Unless otherwise indicated: VR= 1.8V, C

= 1 µF Ceramic (X7R), CIN= 1 µF Ceramic (X7R), IL= 100 µA,

OUT

TA= +25°C, VIN=VR+V.

Note: Junction Temperature (TJ) is approximated by soaking the device under test to an ambient temperature equal to the desired junction temperature. The test time is small enough such that the rise in Junction temperature over the Ambient temperature is not significant.

FIGURE 2-1: Input Quiescent Current vs. Input Voltage.

= 2.8

FIGURE 2-4: Output Voltage vs. Input Voltage (V

=1.2V).

FIGURE 2-2: Ground Current vs. Load Current.

FIGURE 2-3: Quiescent Current vs. Junction Temperature.

FIGURE 2-5: Output Voltage vs. Input Voltage (V

=1.8V).

FIGURE 2-6: Output Voltage vs. Input Voltage (V

=2.8V).

Page 6

MCP1700

4.955

4.960

4.965

4.970

4.975

4.980

4.985

4.990

4.995

5.000

5 5.2 5.4 5.6 5.8 6

Input Voltage (V)

Output Voltage (V)

TJ = - 40°C

TJ = +25°C

TJ = +125°C

VR = 5.0V I

OUT

= 0.1 mA

1.15

1.16

1.17

1.18

1.19

1.20

1.21

0 25 50 75 100 125 150 175 200

Load Curent (mA)

Output Voltage (V)

TJ = - 40°C

TJ = +25°C

TJ = +125°C

VR = 1.2V V

= VR + 1V

1.778

1.780

1.782

1.784

1.786

1.788

1.790

1.792

0 25 50 75 100 125 150 175 200

Load Current (mA)

Output Voltage (V)

TJ = - 40°C

TJ = +25°C

TJ = +125°C

VR = 1.8V V

= VR + 1V

2.778

2.780

2.782

2.784

2.786

2.788

2.790

2.792

2.794

2.796

2.798

0 50 100 150 200 250

Load Current (mA)

Output Voltage (V)

TJ = - 40°C

TJ = +25°C

TJ = +125°C

VR = 2.8V V

= VR + 1V

4.955

4.960

4.965

4.970

4.975

4.980

4.985

4.990

4.995

5.000

0 50 100 150 200 250

Load Current (mA)

Output Voltage (V)

TJ = - 40°C

TJ = +25°C

TJ = +125°C

VR = 5.0V V

= VR + 1V

0.05

0.1

0.15

0.2

0.25

0 25 50 75 100 125 150 175 2 00 225 25 0

Load Current (mA)

Dropout Votage (V)

TJ = - 40°C

TJ = +25°C

TJ = +125°C

Note: Unless otherwise indicated: VR= 1.8V, C

OUT

TA= +25°C, VIN=VR+1V.

FIGURE 2-7: Output Voltage vs. Input Voltage (V

=5.0V).

= 1 µF Ceramic (X7R), CIN= 1 µF Ceramic (X7R), IL= 100 µA,

FIGURE 2-10: Output Voltage vs. Load Current (V

=2.8V).

FIGURE 2-8: Output Voltage vs. Load Current (V

=1.2V).

FIGURE 2-9: Output Voltage vs. Load Current (V

=1.8V).

FIGURE 2-11: Output Voltage vs. Load Current (V

=5.0V).

= 2.8V

FIGURE 2-12: Dropout Voltage vs. Load Current (V

=2.8V).

Page 7

MCP1700

0.02

0.04

0.06

0.08

0.1

0.12

0.14

0.16

0 25 50 75 100 125 150 175 200 225 250

Load Current (mA)

Dropout Voltage (V)

TJ = - 40°C

TJ = +25°C

TJ = +125°C

0.01

0.1

0.01 0.1 1 10 100 1000

Frequency (KHz)

Noise (µV/

√

Hz)

VIN = 2.5V V

= 1.2V

OUT

= 50ma

VIN = 2.8V V

= 1.8V

OUT

= 50ma

VIN = 3.8V V

= 2.8V

OUT

= 50ma

Note: Unless otherwise indicated: VR= 1.8V, C

OUT

TA = +25°C, VIN=VR+1V.

= 5.0V

FIGURE 2-13: Dropout Voltage vs. Load Current (V

=5.0V).

= 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL= 100 µA,

FIGURE 2-16: Noise vs. Frequency.

FIGURE 2-14: Power Supply Ripple

Rejection vs. Frequency (V

FIGURE 2-15: Power Supply Ripple Rejection vs. Frequency (V

=1.2V).

=2.8V).

FIGURE 2-17: Dynamic Load Step (V

=1.2V).

FIGURE 2-18: Dynamic Load Step (V

=1.8V).

Page 8

MCP1700

Note: Unless otherwise indicated: VR= 1.8V, C

TA= +25°C, VIN=VR+1V.

FIGURE 2-19: Dynamic Load Step (V

=2.8V).

= 1 µF Ceramic (X7R), CIN= µF Ceramic (X7R), IL= 100 µA,

OUT

FIGURE 2-22: Dynamic Load Step (V

=5.0V).

FIGURE 2-20: Dynamic Load Step (V

=1.8V).

FIGURE 2-21: Dynamic Load Step (V

=2.8V).

FIGURE 2-23: Dynamic Line Step (V

=2.8V).

FIGURE 2-24: Startup From VIN (V

=1.2V).

Page 9

MCP1700

-0.4

-0.3

-0.2

-0.1

0.1

0.2

0.3

-40 -25 -10 5 20 35 50 65 80 95 110 125

Junction Temperature (°C)

Load Regulation (%)

VR = 1.8V I

OUT

= 0 to 200 mA

= 2.2V

= 5.0V

= 3.5V

-0.7

-0.6

-0.5

-0.4

-0.3

-0.2

-0.1

-40 -25 -10 5 20 35 50 65 80 95 110 125

Junction Temperature (°C)

Load Regulation (%)

VR = 2.8V I

OUT

= 0 to 250 mA

= 5.0V

= 4.3V

= 3.3V

-0.2

-0.15

-0.1

-0.05

0.05

0.1

-40 -25 -10 5 20 35 50 65 80 95 110 125

Junction Temperature (°C)

Load Regulation (%)

VR = 5.0V I

OUT

= 0 to 250 mA

= 5.5V

= 6.0V

-0.3

-0.25

-0.2

-0.15

-0.1

-0.05

0.05

0.1

-40 -25 -10 5 20 35 50 65 80 95 110 125

Junction Temperature (°C)

Line Regulation (%/V)

VR = 1.8V

VR = 1.2V

VR = 2.8V

Note: Unless otherwise indicated: VR= 1.8V, C

TA= +25°C, VIN=VR+1V.

FIGURE 2-25: Start-up From VIN (V

=1.8V).

= 1 µF Ceramic (X7R), CIN= 1 µF Ceramic (X7R), IL= 100 µA,

OUT

FIGURE 2-28: Load Regulation vs. Junction Temperature (V

=2.8V).

FIGURE 2-26: Start-up From V (V

=2.8V).

FIGURE 2-27: Load Regulation vs. Junction Temperature (V

=1.8V).

FIGURE 2-29: Load Regulation vs. Junction Temperature (V

=5.0V).

FIGURE 2-30: Line Regulation vs. Temperature (V

= 1.2V, 1.8V, 2.8V).

Page 10

MCP1700

3.0 PIN DESCRIPTIONS

The descriptions of the pins are listed in Table 3-1.

TABLE 3-1: PIN FUNCTION TABLE

Pin No. SOT-23

1 1 1 GND Ground Terminal 233V 322V

Pin No. SOT-89

Pin No.

TO-92

Name Function

OUT

Regulated Voltage Output Unregulated Supply Voltage

3.1 Ground Terminal (GND)

Regulator ground. Tie GND to the negative side of the output and the negative side of the input capacitor. Only the LDO bias current (1.6 µA typical) flows out of this pin; there is no high current. The LDO output regulation is referenced to this pin. Minimize voltage drops between this pin and the negative side of the load.

3.2 Regulated Output Voltage (V

Connect V positive terminal of the output capacitor. The positive side of the output capacitor should be physically located as close to the LDO V The current flowing out of this pin is equal to the DC load current.

to the positive side of the load and the

OUT

pin as is practical.

OUT

)

3.3 Unregulated Input Voltage Pin )

Connect VIN to the input unregulated source voltage. Like all low dropout linear regulators, low source impedance is necessary for the stable operation of the LDO. The amount of capacitance required to ensure low source impedance will depend on the proximity of the input source capacitors or battery type. For most applications, 1 µF of capacitance will ensure stable operation of the LDO circuit. For applications that have load currents below 100 mA, the input capacitance requirement can be lowered. The type of capacitor used can be ceramic, tantalum or aluminum electrolytic. The low ESR characteristics of the ceramic will yield better noise and PSRR performance at high frequency.

Page 11

4.0 DETAILED DESCRIPTION

MCP1700

OUT

GND

Error Amplifier

Voltage Reference

Overcurrent Overtemperature

MCP1700

4.1 Output Regulation

A portion of the LDO output voltage is fed back to the internal error amplifier and compared with the precision internal bandgap reference. The error amplifier output will adjust the amount of current that flows through the P-Channel pass transistor, thus regulating the output voltage to the desired value. Any changes in input voltage or output current will cause the error amplifier to respond and adjust the output voltage to the target voltage (refer to Figure 4-1).

4.2 Overcurrent

The MCP1700 internal circuitry monitors the amount of current flowing through the P-Channel pass transistor. In the event of a short-circuit or excessive output current, the MCP1700 will turn off the P-Channel device for a short period, after which the LDO will attempt to restart. If the excessive current remains, the cycle will repeat itself.

4.3 Overtemperature

The internal power dissipation within the LDO is a function of input-to-output voltage differential and load current. If the power dissipation within the LDO is excessive, the internal junction temperature will rise above the typical shutdown threshold of 140°C. At that point, the LDO will shut down and begin to cool to the typical turn-on junction temperature of 130°C. If the power dissipation is low enough, the device will continue to cool and operate normally. If the power dissipation remains high, the thermal shutdown protection circuitry will again turn off the LDO, protecting it from catastrophic failure.

FIGURE 4-1: Block Diagram.

Page 12

MCP1700

5.0 FUNCTIONAL DESCRIPTION

The MCP1700 CMOS low dropout linear regulator is intended for applications that need the lowest current consumption while maintaining output voltage regulation. The operating continuous load range of the MCP1700 is from 0 mA to 250 mA (V input operating voltage range is from 2.3V to 6.0V, making it capable of operating from two, three or four alkaline cells or a single Li-Ion cell battery input.

5.1 Input

The input of the MCP1700 is connected to the source of the P-Channel PMOS pass transistor. As with all LDO circuits, a relatively low source impedance (10Ω) is needed to prevent the input impedance from causing the LDO to become unstable. The size and type of the capacitor needed depends heavily on the input source type (battery, power supply) and the output current range of the application. For most applications (up to 100 mA), a 1 µF ceramic capacitor will be sufficient to ensure circuit stability. Larger values can be used to improve circuit AC performance.

≥ 2.5V). The

5.2 Output

The maximum rated continuous output current for the MCP1700 is 250 mA (V where VR< 2.5V, the maximum output current is 200 mA.

A minimum output capacitance of 1.0 µF is required for small signal stability in applications that have up to 250 mA output current capability. The capacitor type can be ceramic, tantalum or aluminum electrolytic. The esr range on the output capacitor can range from 0Ω to

2.0Ω.

≥ 2.5V). For applications

5.3 Output Rise time

When powering up the internal reference output, the typical output rise time of 500 µs is controlled to prevent overshoot of the output voltage.

Page 13

MCP1700

GND

OUT

1µF Ceramic

OUT

1 µF Ceramic

OUT

(2.3V to 3.2V)

1.8V

OUT

150 mA

LDO

IN MAX)()VOUT MIN()

–()I

OUT MAX )()

×=

LDO

= LDO Pass device internal power dissipation

IN(MAX)

= Maximum input voltage

OUT(MIN)

= LDO minimum output voltage

JMAX()PTOTAL

RθJA× T

AMAX

J(MAX)

= Maximum continuous junction

temperature. P

TOTAL

= Total device power dissipation.

Rθ

= Thermal resistance from junction to ambient.

AMAX

= Maximum ambient temperature.

DMAX()

JMAX()TAMAX()

–()

Rθ

---------------------------------------------------=

D(MAX)

= Maximum device power dissipation.

J(MAX)

= Maximum continuous junction

temperature.

A(MAX)

= Maximum ambient temperature.

Rθ

= Thermal resistance from junction to ambient.

JRISE()PDMAX()RθJA

×=

J(RISE)

= Rise in device junction temperature over

the ambient temperature.

TOTAL

= Maximum device power dissipation.

Rθ

= Thermal resistance from junction to ambient.

TJT

JRISE()TA

= Junction Temperature.

J(RISE)

= Rise in device junction temperature over

the ambient temperature.

= Ambient temperature.

6.0 APPLICATION CIRCUITS & ISSUES

6.1 Typical Application

The MCP1700 is most commonly used as a voltage regulator. It’s low quiescent current and low dropout voltage make it ideal for many battery-powered applications.

FIGURE 6-1: Typical Application Circuit.

6.1.1 APPLICATION INPUT CONDITIONS

Package Type = SOT-23

Input Voltage Range = 2.3V to 3.2V

maximum = 3.2V

typical = 1.8V

OUT

= 150 mA maximum

OUT

EQUATION 6-2:

The maximum power dissipation capability for a package can be calculated given the junction-toambient thermal resistance and the maximum ambient temperature for the application. The following equation can be used to determine the package maximum internal power dissipation.

EQUATION 6-3:

6.2 Power Calculations

6.2.1 POWER DISSIPATION

The internal power dissipation of the MCP1700 is a function of input voltage, output voltage and output current. The power dissipation, as a result of the quiescent current draw, is so low, it is insignificant (1.6 µA x V calculate the internal power dissipation of the LDO.

EQUATION 6-1:

The maximum continuous operating junction temperature specified for the MCP1700 is +125 estimate the internal junction temperature of the MCP1700, the total internal power dissipation is multiplied by the thermal resistance from junction to ambient (Rθ ambient for the SOT-23 pin package is estimated at 230

°C/W.

). The following equation can be used to

). The thermal resistance from junction to

EQUATION 6-4:

EQUATION 6-5:

°C. To

Page 14

MCP1700

PIC

MCP1700

GND

1µF

OUT

1µF

Bridge Sensor

OUT

REF

ADO AD1

Ratio Metric Reference

1 µA Bias

Microcontroller

6.3 Voltage Regulator

Internal power dissipation, junction temperature rise, junction temperature and maximum power dissipation are calculated in the following example. The power dissipation, as a result of ground current, is small enough to be neglected.

6.3.1 POWER DISSIPATION EXAMPLE

Package

Package Type = SOT-23 Input Voltage

= 2.3V to 3.2V

LDO Output Voltages and Currents

=1.8V

OUT

=150mA

OUT

Maximum Ambient Temperature

= +40°C

A(MAX)

Internal Power Dissipation

Internal Power dissipation is the product of the LDO output current times the voltage across the LDO (V

to V P

OUT

LDO(MAX)

LDO

=(V

IN(MAX)

- V

OUT(MIN)

) x I

OUT(MAX)

= (3.2V - (0.97 x 1.8V)) x 150 mA = 218.1 milli-Watts

Maximum Package Power Dissipation at +40°C Ambient Temperature

SOT-23 (230.0°C/Watt = Rθ

SOT-89 (52°C/Watt = Rθ

TO-92 (131.9°C/Watt = Rθ

6.4 Voltage Reference

The MCP1700 can be used not only as a regulator, but also as a low quiescent current voltage reference. In many microcontroller applications, the initial accuracy of the reference can be calibrated using production test equipment or by using a ratio measurement. When the initial accuracy is calibrated, the thermal stability and line regulation tolerance are the only errors introduced by the MCP1700 LDO. The low cost, low quiescent current and small ceramic output capacitor are all

D(MAX)

JRISE

+ T

A(MAX)

TJ = 90.2°C

)

= (125°C - 40°C) / 230°C/W = 369.6 milli-Watts

)

= (125°C - 40°C) / 52°C/W = 1.635 Watts

)

= (125°C - 40°C) / 131.9°C/W = 644 milli-Watts

advantages when using the MCP1700 as a voltage

Device Junction Temperature Rise

reference.

The internal junction temperature rise is a function of internal power dissipation and the thermal resistance from junction to ambient for the application. The thermal resistance from junction to ambient (Rθ

) is derived

from an EIA/JEDEC standard for measuring thermal resistance for small surface mount packages. The EIA/ JEDEC specification is JESD51-7, “High Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages”. The standard describes the test method and board specifications for measuring the thermal resistance from junction to ambient. The actual thermal resistance for a particular application can vary depending on many factors, such as copper area and thickness. Refer to AN792, “A Method to Determine How Much Power a SOT-23 Can Dissipate in an Application”, (DS00792), for more information regarding

FIGURE 6-2: Using the MCP1700 as a voltage reference.

this subject.

Junction Temperature Estimate

J(RISE)

= 218.1 milli-Watts x 230.0°C/Watt

JRISE

= 50.2°C

JRISE

To estimate the internal junction temperature, the calculated temperature rise is added to the ambient or offset temperature. For this example, the worst-case junction temperature is estimated below.

x Rq

TOTAL

6.5 Pulsed Load Applications

For some applications, there are pulsed load current events that may exceed the specified 250 mA maximum specification of the MCP1700. The internal current limit of the MCP1700 will prevent high peak load demands from causing non-recoverable damage. The 250 mA rating is a maximum average continuous rating. As long as the average current does not exceed 250 mA, pulsed higher load currents can be applied to the MCP1700 MCP1700 is 550 mA (T

. The typical current limit for the

+25°C).

Page 15

7.0 PACKAGING INFORMATION

3-Pin SOT-23

CKNN

3-Pin SOT-89

CUYYWW

NNN

3-Pin TO-92

XXXXXX XXXXXX

YWWNNN

Standard

Extended Temp

Symbol Voltage *

CK 1.2 CM 1.8 CP 2.5 CR 3.0 CS 3.3 CU 5.0

Example:

1700

1202E

313256

* Custom output voltages available upon request. Contact your local Microchip sales office for more

information.

XXXXXX

TO^^

Legend: XX...X Customer-specific information

Y Year code (last digit of calendar year) YY Year code (last 2 digits of calendar year) WW Week code (week of January 1 is week ‘01’) NNN Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) * This package is Pb-free. The Pb-free JEDEC designator ( )

can be found on the outer packaging for this package.

Note: In the event the full Microchip part number cannot be marked on one line, it will

be carried over to the next line, thus limiting the number of available characters for customer-specific information.

7.1 Package Marking Information

MCP1700

Page 16

MCP1700

3-Lead Plastic Small Outline Transistor (TT or NB) [SOT-23]

Notes:

1. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.25 mm per side.

2. Dimensioning and tolerancing per ASME Y14.5M. BSC: Basic Dimension. Theoretically exact value shown without tolerances.

Note: For the most current package drawings, please see the Microchip Packaging Specification located at

http://www.microchip.com/packaging

Units MILLIMETERS

Dimension Limits MIN NOM MAX Number of Pins N 3 Lead Pitch e 0.95 BSC Outside Lead Pitch e1 1.90 BSC Overall Height A 0.89 – 1.12 Molded Package Thickness A2 0.79 0.95 1.02 Standoff A1 0.01 – 0.10 Overall Width E 2.10 – 2.64 Molded Package Width E1 1.16 1.30 1.40 Overall Length D 2.67 2.90 3.05 Foot Length L 0.13 0.50 0.60 Foot Angle φ 0° – 10° Lead Thickness c 0.08 – 0.20 Lead Width b 0.30 – 0.54

Microchip Technology Drawing C04-104B

Page 17

3-Lead Plastic Small Outline Transistor Header (MB) [SOT-89]

Notes:

1. Dimensions D and E do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.127 mm per side.

2. Dimensioning and tolerancing per ASME Y14.5M. BSC: Basic Dimension. Theoretically exact value shown without tolerances.

Note: For the most current package drawings, please see the Microchip Packaging Specification located at

http://www.microchip.com/packaging

Units MILLIMETERS

Dimension Limits MIN MAX Number of Leads N 3 Pitch e 1.50 BSC Outside Lead Pitch e1 3.00 BSC Overall Height A 1.40 1.60 Overall Width H 3.94 4.25 Molded Package Width at Base E 2.29 2.60 Molded Package Width at Top E1 2.13 2.29 Overall Length D 4.39 4.60 Tab Length D1 1.40 1.83 Foot Length L 0.79 1.20 Lead Thickness c 0.35 0.44 Lead 2 Width b 0.41 0.56 Leads 1 & 3 Width b1 0 .36 0.48

Microchip Technology Drawing C04-029B

MCP1700

Page 18

MCP1700

3-Lead Plastic Transistor Outline (TO or ZB) [TO-92]

Notes:

1. Dimensions A and E do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .005" per side.

2. Dimensioning and tolerancing per ASME Y14.5M. BSC: Basic Dimension. Theoretically exact value shown without tolerances.

Note: For the most current package drawings, please see the Microchip Packaging Specification located at

http://www.microchip.com/packaging

Units INCHES

Dimension Limits MIN MAX Number of Pins N 3 Pitch e .050 BSC Bottom to Package Flat D .125 .165 Overall Width E .175 .205 Overall Length A .170 .210 Molded Package Radius R .080 .105 Tip to Seating Plane L .500 – Lead Thickness c .014 .021 Lead Width b .014 .022

Microchip Technology Drawing C04-101B

Page 19

APPENDIX A: REVISION HISTORY

Revision B (February 2007)

• Updated Packaging Information.

• Corrected Section “Product Identification System”.

• Changed X5R to X7R in Notes to “DC

Characteristics”, “Temperature Specifications”, and “Typical Performance Curves” .

Revision A (November 2005)

• Original Release of this Document.

MCP1700

Page 20

MCP1700

NOTES:

Page 21

PRODUCT IDENTIFICATION SYSTEM

Device: MCP1700: Low Quiescent Current LDO

Tape and Reel: T: Tape and Reel only applies to SOT-23 and SOT-89

devices

Standard Output Voltage: *

120 = 1.2V 180 = 1.8V 250 = 2.5V 300 = 3.0V 330 = 3.3V 500 = 5.0V

* Custom output voltages available upon request. Contact your local Microchip sales office for more information

Tolerance: 2 = 2%

Temperature Range: E = -40°C to +125°C (Extended)

Package: MB = Plastic Small Outline Transistor (SOT-89), 3-lead

TO = Plastic Small Outline Transistor (TO-92), 3-lead TT = Plastic Small Outline Transistor SOT-23), 3-lead

Examples: SOT-89 Package:

a) MCP1700T-1202E/MB: 1.2V V

OUT

b) MCP1700T-1802E/MB: 1.8V V

OUT

c) MCP1700T-2502E/MB: 2.5V V

OUT

d) MCP1700T-3002E/MB: 3.0V V

OUT

e) MCP1700T-3302E/MB: 3.3V V

OUT

f) MCP1700T-5002E/MB: 5.0V V

OUT

TO-92 Package:

g) MCP1700-1202E/TO: 1.2V V

OUT

h) MCP1700-1802E/TO: 1.8V V

OUT

i) MCP1700-2502E/TO: 2.5V V

OUT

j) MCP1700-3002E/TO: 3.0V V

OUT

k) MCP1700-3302E/TO: 3.3V V

OUT

l) MCP1700-5002E/TO: 5.0V V

OUT

SOT-23 Package:

a) MCP1700T-1202E/TT: 1.2V V

OUT

b) MCP1700T-1802E/TT: 1.8V V

OUT

c) MCP1700T-2502E/TT: 2.5V V

OUT

d) MCP1700T-3002E/TT: 3.0V V

OUT

e) MCP1700T-3302E/TT: 3.3V V

OUT

f) MCP1700T-5002E/TT: 5.0V V

OUT

PART NO. X- XXX

Vol tag eTap e &

Reel

MCP1700

Tol eranceXTem p.

Range

/XX

Package

Output

To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.

MCP1700

Page 22

MCP1700

NOTES:

Page 23

Note the following details of the code protection feature on Microchip devices:

• Microchip products meet the specification contained in their particular Microchip Data Sheet.

• Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions.

• There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property.

• Microchip is willing to work with the customer who is concerned about the integrity of their code.

• Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.”

Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.

Information contained in this publication regarding device

applications and the like is provided only for your convenience

and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR

WARRANTIES OF ANY KIND WHETHER EXPRESS OR

IMPLIED, WRITTEN OR ORAL, STATUTORY OR

OTHERWISE, RELATED TO THE INFORMATION,

INCLUDING BUT NOT LIMITED TO ITS CONDITION,

QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip

devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip

intellectual property rights.

Trademarks

The Microchip name and logo, the Microchip logo, Accuron, dsPIC, K

EELOQ, KEELOQ logo, microID, MPLAB, PIC,

PICmicro, PICSTART, PRO MATE, PowerSmart, rfPIC, and SmartShunt are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries.

AmpLab, FilterLab, Linear Active Thermistor, Migratable Memory, MXDEV, MXLAB, PS logo, SEEVAL, SmartSensor and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A.

Analog-for-the-Digital Age, Application Maestro, CodeGuard, dsPICDEM, dsPICDEM.net, dsPICworks, ECAN, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, Mindi, MiWi, MPASM, MPLAB Certified logo, MPLIB, MPLINK, PICkit, PICDEM, PICDEM.net, PICLAB, PICtail, PowerCal, PowerInfo, PowerMate, PowerTool, REAL ICE, rfLAB, rfPICDEM, Select Mode, Smart Serial, SmartTel, Total Endurance, UNI/O, WiperLock and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries.

SQTP is a service mark of Microchip Technology Incorporated in the U.S.A.

All other trademarks mentioned herein are property of their respective companies.

Printed on recycled paper.

Microchip received ISO/TS-16949:2002 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona, Gresham, Oregon and Mountain View, California. The Company’s quality system processes and procedures are for its PIC MCUs and dsPIC® DSCs, KEELOQ EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified.

code hopping devices, Serial

Page 24

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12/08/06