Datasheet ITS711L1 Datasheet

PROFET® ITS711L1

Smart Four Channel Highside Power Switch

for Industrial Applications

Features

•

Overload protection

•

Current limitation

•

Short-circuit protection

•

Thermal shutdown

•

Overvoltage protection

(including load dump)

•

Fast demagnetization of inductive loads

•

Reverse battery protection

•

Undervoltage and overvoltage shutdown

with auto-restart and hysteresis

•

Open drain diagnostic output

• Open load detection in ON-state

•

CMOS compatible input

•

Loss of ground and loss of V

•

Electrostatic discharge (ESD) protection

1

)

protection

bb

Product Summary

Overvoltage Protection

Operating voltage

Operating temperature

active channels: one On-state resistance RON 200 100 50 Nominal load current I

Current limitation I

Application

•

µC compatible power switch with diagnostic feedback

for 12 V and 24 V DC grounded loads in industrial applications

•

All types of resistive, inductive and capacitive loads

•

Replaces electromechanical relays and discrete circuits

V V T

43 V

bb(AZ)

5.0 ... 34 V

bb(on)

a

-30 … +85 °C

two parallel four parallel

mΩ

L(NOM)

L(SCr)

1.9 2.8 4.4

4 4 4

A A

PG-DSO-20

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.

Pin Definitions and Functions

Pin Symbol Function 1,10, 11,12, 15,16, 19,20 3 IN1 5 IN2 logic high signal 7 IN3 9 IN4 18 OUT1 17 OUT2 of channel 1 .. 4. Design the wiring for the 14 OUT3 max. short circuit current 13 OUT4 4 ST1/2

8 ST3/4

2 GND1/2 6 GND3/4

V

bb

Positive power supply voltage. Design the

wiring for the simultaneous max. short circuit currents from channel 1 to 4 and also for low thermal resistance

Input 1 .. 4, activates channel 1 .. 4 in case of

Output 1 .. 4, protected high-side power output

Diagnostic feedback 1/2 of channel 1 and

channel 2, open drain, low on failure

Diagnostic feedback 3/4 of channel 3 and

channel 4, open drain, low on failure

Ground 1/2 of chip 1 (channel 1 and channel 2) Ground 3/4 of chip 2 (channel 3 and channel 4)

Pin configuration (top view)

V

1 • 20 V

bb

GND1/2 2 19 Vbb

IN1 3 18 OUT1

ST1/2 4 17 OUT2

IN2 5 16 Vbb

GND3/4 6 15 Vbb

IN3 7 14 OUT3

ST3/4 8 13 OUT4

IN4 9 12 Vbb Vbb 10 11 Vbb

bb

1)

With external current limit (e.g. resistor R

connection, reverse load current limited by connected load.

=150 Ω) in GND connection, resistor in series with ST

GND

Infineon Technologies AG 1 2006-Mar-23

PROFET® ITS711L1

Block diagram

Four Channels; Open Load detection in on state;

Voltage

source

V

Logic

Voltage

sensor

3

IN1

IN2

5

4

ST1/2

ESD

Logic

Overvoltage

protection

Level shifter

Rectifier 1

Charge

pump 1

Charge

pump 2

Current

limit 1

Current

limit 2

Gate 1

protection

Limit for unclamped ind. loads 1

Open load

Short to Vbb

detection 1

Gate 2

protection

Temperature

sensor 1

+ V

Channel 1

OUT1

Channel 2

bb

Leadframe

18

Signal GND

Chip 1

Signal GND

Chip 2

2

8

6

7

9

GND1/2

IN3

IN4

ST3/4

GND3/4

Chip 1

PROFET

Chip 2

Level shifter

Rectifier 2

Short to Vbb

Logic and protection circuit of chip 2

(equivalent to chip 1)



Limit for unclamped ind. loads 2

Open load

detection 2

Temperature

sensor 2

OUT2

RR

O1

RR

O3

GND1/2

+ V

Channel 3

OUT3

Channel 4

OUT4

GND3/4

O2

bb

O4

17

Load

Load GND

Leadframe

14

13

Load

Load GND

Leadframe connected to pin 1, 10, 11, 12, 15, 16, 19, 20

Infineon Technologies AG 2 2006-Mar-23

PROFET® ITS711L1

Maximum Ratings at Tj = 25°C unless otherwise specified

Parameter Symbol Values Unit

Supply voltage (overvoltage protection see page 4) Vbb 43 V Supply voltage for full short circuit protection

T

= -40 ...+150°C

j,start

Vbb 34 V

Load current (Short-circuit current, see page 5) IL self-limited A Load dump protection2) V

3)

R

= 2 Ω, t

I

= 200 ms; IN = low or high,

d

LoadDump

each channel loaded with R Junction temperature Operating temperature range Storage temperature range Power dissipation (DC)5 Ta = 25°C: (all channels active)

T

Inductive load switch-off energy dissipation, single pulse V

= 12V, T

bb

IL = 1.9 A, Z IL = 2.8 A, Z IL = 4.4 A, Z

= 150°C5),

j,start

= 66 mH, 0 Ω one channel:

L

= 66 mH, 0 Ω two parallel channels:

L

= 66 mH, 0 Ω four parallel channels:

L

= UA + Vs, UA = 13.5 V

= 7.1 Ω,

L

= 85°C:

a

V

Load

4

)

dump

Tj T

a

T

stg

P

3.6

tot

-30 ... +85

-40 … +105

EAS

60 V

+150

1.9

150 320 800

°C

W

mJ

see diagrams on page 9 and page 10 Electrostatic discharge capability (ESD)

V

1.0 kV

ESD

(Human Body Model) Input voltage (DC) VIN -10 ... +16 V Current through input pin (DC) Current through status pin (DC)

IIN IST

±2.0 ±5.0

mA

see internal circuit diagram page 8

Thermal resistance junction - soldering point

5),6)

each channel: junction - ambient5) one channel active: all channels active:

2)

Supply voltages higher than V

150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for input

protection is integrated.

3)

RI = internal resistance of the load dump test pulse generator

4)

V

Load dump

5)

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm

connection. PCB is vertical without blown air. See page 15

6)

Soldering point: upper side of solder edge of device pin 15. See page 15

is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839

require an external current limit for the GND and status pins, e.g. with a

bb(AZ)

2

(one layer, 70µm thick) copper area for V

R R

thjs

thja

16 K/W 44 35

bb

Infineon Technologies AG 3 2006-Mar-23

PROFET® ITS711L1

Electrical Characteristics

Parameter and Conditions, each of the four channels Symbol Values Unit

at Tj = 25 °C, V

Load Switching Capabilities and Characteristics

= 12 V unless otherwise specified

bb

min typ max

On-state resistance (Vbb to OUT) IL = 1.8 A each channel, Tj = 25°C:

T

= 150°C:

j

two parallel channels, Tj = 25°C: four parallel channels, Tj = 25°C: Nominal load current one channel active:

two parallel channels active: four parallel channels active:

Device on PCB5), T

= 85°C, Tj ≤ 150°C

a

Output current while GND disconnected or pulled

up; V

Turn-on time to 90% V Turn-off time to 10% V R

= 12 Ω, T

L

= 30 V, V

bb

= 0, see diagram page 9

IN

=-40...+150°C

j

OUT

Slew rate on 10 to 30% V

OUT

, R

= 12 Ω, T

L

=-40...+150°C:

j

Slew rate off 70 to 40% V

OUT

, R

= 12 Ω, T

L

=-40...+150°C:

j

: :

RON

I

ton t

dV/dt

-dV/dt

1.7

L(NOM)

L(GNDhigh)

off

-- -- 10 mA

0.1 -- 1 V/µs

on

0.1 -- 1 V/µs

off

--

2.6

4.1

80 80

165 320

83 42

1.9

200

mΩ

400

100

50

-- A

2.8

4.4

200 200

400

µs

Operating Parameters

Operating voltage7) Tj =-40...+150°C: V Undervoltage shutdown Tj =-40...+150°C: V Undervoltage restart Tj =-40...+25°C:

V

Tj =+150°C: Undervoltage restart of charge pump

V

5.0 -- 34 V

bb(on)

bb(under)

bb(u rst)

bb(ucp)

3.5 -- 5.0 V

-- -- 5.0

-- 5.6 7.0 V

V

7.0

see diagram page 14 Tj =-40...+150°C: Undervoltage hysteresis

∆V

bb(under)

= V

bb(u rst)

- V

bb(under)

Overvoltage shutdown Tj =-40...+150°C: V Overvoltage restart Tj =-40...+150°C: V Overvoltage hysteresis T Overvoltage protection I

= 40 mA

bb

7)

At supply voltage increase up to V

8)

see also V

ON(CL)

8)

Tj =-40...+150°C:

in circuit diagram on page 8.

=-40...+150°C: ∆V

j

= 5.6 V typ without charge pump, V

bb

∆V

bb(over)

bb(o rst)

V

bb(AZ)

bb(under)

-- 0.2 -- V

34 -- 43 V 33 -- -- V

bb(over)

-- 0.5 -- V

42 47 -- V

≈V

OUT

- 2 V

bb

Infineon Technologies AG 4 2006-Mar-23

PROFET® ITS711L1

Parameter and Conditions, each of the four channels Symbol Values Unit

at Tj = 25 °C, V

Standby current, all channels off Tj =25°C: V

= 0 T

IN

Leakage output current (included in I

VIN = 0

Operating current 9), V I

= I

GND

four channels on:

GND1/2

Protection Functions

= 12 V unless otherwise specified

bb

= 5V, Tj =-40...+150°C

IN

+ I

, one channel on:

GND3/4

10)

bb(off)

=150°C:

j

)

I

--

bb(off)

I

-- -- 12 µA

L(off)

I

GND

min typ max

28

--

44

2 8

60 70

312mA

µA

Initial peak short circuit current limit,

diagrams, page 12)

(see timing

each channel, Tj =-40°C:

=25°C:

Tj

=+150°C:

Tj

I

5.5

L(SCp)

4.5

2.5

9.5

7.5

4.5

13 11

A

7

two parallel channels twice the current of one channel

four parallel channels four times the current of one channel Repetitive short circuit current limit, Tj = Tjt each channel two parallel channels four parallel channels

(see timing diagrams, page 12)

Initial short circuit shutdown time T T

(see page 11 and timing diagrams on page 12)

Output clamp (inductive load switch off) at V

ON(CL)

= Vbb - V

OUT

j,start

11)

=-40°C:

= 25°C:

I

--

L(SCr)

t

V

--

off(SC)

-- 47 -- V

ON(CL)

--

4 4 4

5.5 4

--

A

--

ms

--

Thermal overload trip temperature Tjt 150 -- -- °C Thermal hysteresis

∆

Tjt -- 10 -- K

Reverse Battery

Reverse battery voltage Drain-source diode voltage (V

= - 1.9 A, Tj = +150°C

IL

9)

Add I

10)

Integrated protection functions are designed to prevent IC destruction under fault conditions described in the

data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation.

11)

If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest

V

12)

Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source

diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 3 and circuit page 8).

ST

ON(CL)

, if IST > 0

12)

-Vbb -- -- 32 V

out

> V

bb

)

-VON -- 610 -- mV

Infineon Technologies AG 5 2006-Mar-23

PROFET® ITS711L1

Parameter and Conditions, each of the four channels Symbol Values Unit

at Tj = 25 °C, V

Diagnostic Characteristics

= 12 V unless otherwise specified

bb

min typ max

Open load detection current, (on-condition) each channel, Tj = -40°C: Tj = 25°C: Tj = 150°C:

two parallel channels

four parallel channels

Open load detection voltage

13)

Tj =-40..+150°C: V

Internal output pull down

(OUT to GND), V

Input and Status Feedback

= 5 V T

OUT

14)

=-40..+150°C: RO

j

Input resistance

(see circuit page 8) Tj =-40..+150°C:

Input turn-on threshold voltage

T

=-40..+150°C:

j

Input turn-off threshold voltage

T

=-40..+150°C:

j

Input threshold hysteresis ∆ V

Off state input current VIN = 0.4 V:

I

L (OL)1

10 10 10

--

200

mA 150 150

twice the current of one channel

four times the current of one channel

OUT(OL)

2 3 4V

4

10 30 kΩ

R

2.5 3.5 6 kΩ

I

V

I

1.7 -- 3.5 V

IN(T+)

1.5 -- -- V

IN(T-)

-- 0.5 -- V

IN(T)

1 -- 50 µA

IN(off)

Tj =-40..+150°C: On state input current VIN = 5 V:

I

20 50 90 µA

IN(on)

Tj =-40..+150°C: Delay time for status with open load after switch

t

d(ST OL4)

100 320 800 µs

off (other channel in off state) (see timing diagrams, page 13), Tj =-40..+150°C:

Delay time for status with open load after switch

t

d(ST OL5)

-- 5 20 µs

off (other channel in on state) (see timing diagrams, page 13), Tj =-40..+150°C:

Status invalid after positive input slope (open load) Tj =-40..+150°C:

t

d(ST)

-- 200 600 µs

Status output (open drain) Zener limit voltage Tj =-40...+150°C, IST = +1.6 mA: ST low voltage Tj =-40...+25°C, IST = +1.6 mA:

T

= +150°C, IST = +1.6 mA:

j

V

ST(high)

V

ST(low)

5.4

--

6.1

--

0.4

0.6

--

V

13)

External pull up resistor required for open load detection in off state.

14)

If ground resistors R

are used, add the voltage drop across these resistors.

GND

Infineon Technologies AG 6 2006-Mar-23

PROFET® ITS711L1

Truth Table

Channel 1 and 2 Chip 1 Channel 3 and 4

Chip 2

(equivalent to channel 1 and 2)

Normal operation

Open load

Short circuit to V

bb

Overtemperature

Undervoltage/ Overvoltage X X L L H

Channel 1 (3)

Channel 2 (4)

Channel 1 (3)

Channel 2 (4)

both channel

Channel 1 (3)

Channel 2 (4)

L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit H = "High" Level Status signal valid after the time delay shown in the timing diagrams

IN1 IN2 OUT1 OUT2 ST1/2 IN3 IN4 OUT3 OUT4 ST3/4

BTS 711L1

L L H H L L H

L H X L L H

L H X L X H L H X X

L

H

L

H

L

H

X

L L

H

L

H

X

L L

H

L

H

X X X L

H

L

L H H

Z

Z H

L H

X H H H

L H

X

L

X

L

H

L

H

L

H

X

Z Z

H

L

H

X

H H H

L L L X X L L

H(L

L

H(L

L

H(L

H H H H

15)

H L

15)

H L

16)

H

17)

16)

H

17)

H L L H L H L

)

Parallel switching of channel 1 and 2 (also channel 3 and 4) is easily possible by connecting the inputs and outputs in parallel (see truth table). If switching channel 1 to 4 in parallel, the status outputs ST1/2 and ST3/4 have to be configured as a 'Wired OR' function with a single pull-up resistor.

Terms

I

bb

V

bb

V

IN1

I

IN1

3

IN1

I

IN2

5

4

IN2

ST1/2

R

GND1/2

I

ST1/2

V

IN2

ST1/2

Leadframe

V

bb

PROFET

Chip 1

GND1/2

2

OUT1

OUT2

I

GND1/2

V

ON1

V

ON2

I

L1

18

I

L2

17

V

IN3

V

OUT2

V

OUT1

I

IN3

7

IN3

I

IN4

9

8

IN4

ST3/4

R

GND3/4

I

ST3/4

V

IN4

ST3/4

Leadframe

V

bb

PROFET

Chip 2

GND3/4

6

OUT3

OUT4

I

GND3/4

V

ON3

V

ON4

I

L3

14

I

L4

13

V

OUT3

V

OUT4

Leadframe (V External R

) is connected to pin 1,10,11,12,15,16,19,20

bb

optional; two resistors R

GND

GND1/2

,R

GND3/4

= 150 Ω or a single resistor R

= 75 Ω for

GND

reverse battery protection up to the max. operating voltage.

15)

With additional external pull up resistor

16)

An external short of output to Vbb in the off state causes an internal current from output to ground. If R used, an offset voltage at the GND and ST pins will occur and the V

17)

Low resistance to V

bb

may be detected by no-load-detection

signal may be errorious.

ST low

GND

is

Infineon Technologies AG 7 2006-Mar-23

PROFET® ITS711L1

Input circuit (ESD protection), IN1...4

R

IN

I

ESD-ZD

I

GND

I

ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V).

Status output, ST1/2 or ST3/4

R

ST(ON)

GND

ESD-Zener diode: 6.1 V typ., max 5.0 mA; R be used as voltage clamp at DC conditions. Operation in this mode may resul (increase of up to 1 V).

< 380 Ω at 1.6 mA, ESD zener diodes are not to

ST(ON)

t in a drift of the zener voltage

+5V

ST

ESDZD

Inductive and overvoltage output clamp,

OUT1...4

V

Z

+V

bb

Overvoltage protection of logic part

GND1/2 or GND3/4

+ V

V

Z2

GND

R

GND

= 3.5 kΩ typ.,

I

R

ST

V

= 6.1 V typ., V

Z1

R

= 150 Ω

GND

R

I

IN

ST

V

Z1

= 47 V typ., R

Z2

Logic

Signal GND

Reverse battery protection

± 5V

R

ST

IN

ST

R

= 150 Ω, RI = 3.5 kΩ typ,

GND

R

I

Logic

GND

R

GND

Signal GND

Power Inverse Diode

Temperature protection is not active during inverse current operation.

R

Power GND

-

OUT

L

bb

V

bb

V

ON

OUT

PROFET

VON clamped to V

ON(CL)

Power GND

= 47 V typ.

Infineon Technologies AG 8 2006-Mar-23

PROFET® ITS711L1

Open-load detection, OUT1...4

ON-state diagnostic condition: V

< R

ON

ON·IL(OL)

Logic

unit

OFF-state diagnostic condition: V

> 3 V typ.; IN low

OUT

OFF

Logic

unit

; IN high

ON

Open load

detection

Open load

detection

GND disconnect with GND pull up

V

PROFET

GND

> V

IN

bb

V

- V

OUT1

OUT2

GND

device stays off

IN(T+)

IN1

IN2

V

IN2

ST

V

ST

GND

+ V

V

OUT

(channel 1/2 or 3/4)

bb

V

IN1

ON

V

bb

Any kind of load. If V Due to V

> 0, no VST = low signal available.

GND

Vbb disconnect with energized inductive load

R

EXT

IN1

high

V

OUT

R

O

IN2

ST

V

bb

PROFET

GND

OUT1

OUT2

Signal GND

GND disconnect

(channel 1/2 or 3/4)

V

bb

V

IN2

IN1

Any kind of load. In case of IN = high is V Due to V

> 0, no V

GND

I

bb

V

IN1

IN2

ST

V

ST

bb

OUT1

PROFET

OUT2

GND

V

GND

= low signal available.

OUT

≈ V

IN

- V

IN(T+)

V

bb

For an inductive load current up to the limit defined by EAS (max. ratings see page 3 and diagram on page 10) each switch is protected against loss of Vbb.

Consider at your PCB layout that in the case of Vbb disconnection with energized inductive load the whole load current flows through the GND connection.

.

Infineon Technologies AG 9 2006-Mar-23

PROFET® ITS711L1

Inductive load switch-off energy dissipation

E

bb

E

AS

E

V

IN

=

ST

bb

PROFET

GND

OUT

L

Z

L

{

R

E

L

Energy stored in load inductance:

/

·L·I

2

2 L

1

E

=

L

While demagnetizing load inductance, the energy dissipated in PROFET is

= Ebb + EL - ER= ∫ V

E

AS

with an approximate solution for R

· L

I

L

=

(V

E

AS

2

·R

+ |V

OUT(CL)

bb

L

|) ln (1+

ON(CL)·iL

L

> 0

Ω:

|V

(t) dt,

·R

I

L

OUT(CL)

)

|

Maximum allowable load inductance for a single switch off (one channel)

L = f (IL ); T

L [mH]

1000

j,start

150°C, V

=

bb

5)

= 12 V, R

= 0 Ω

L

Typ. on-state resistance

R

= f (Vbb,Tj ); IL = 1.8 A, IN = high

ON

R

[mOhm]

ON

500

Load

L

R

450

400

350

300

250

Tj = 150°C

85°C

200

150

100

50

0

010203040

V

25°C

-40°C

bb

[V]

Typ. open load detection current

= f (Vbb,Tj ); IN = high

I

L(OL)

[mA]

I

L(OL)

140

-40°C

120

25°C

85°C

Tj = 150°C

bb

[V]

100

10

1

11.522.53

100

80

< 6 V

60

40

20

0

0 5 10 15 20 25 30

bb

for V

no load detection not specified

V

IL [A]

Infineon Technologies AG 10 2006-Mar-23

PROFET® ITS711L1

Typ. standby current

I

= f (Tj ); V

bb(off)

[µA]

I

bb(off)

60

50

40

30

20

10

= 9...34 V, IN

bb

1...4

= low

0

-50 0 50 100 150 200

T

[°C]

j

Typ. initial short circuit shutdown time

t

= f (T

off(SC)

[msec]

off(SC)

6

5

4

3

2

j,start

); V

bb

=12 V

1

0

-50 0 50 100 150 200

T

j,start

[°C]

Infineon Technologies AG 11 2006-Mar-23

PROFET® ITS711L1

Timing diagrams

Timing diagrams are shown for chip 1 (channel 1/2). For chip 2 (channel 3/4) the diagrams are valid too. The channels 1 and 2, respectively 3 and 4, are symmetric and consequently the diagrams are valid for each channel as well as for permuted channels

Figure 1a: Vbb turn on:

IN1

IN2

V

bb

V

OUT1

V

OUT2

ST open drain

Figure 2a: Switching a lamp:

IN

Figure 2b: Switching an inductive load

IN

t

ST

V

I

OUT

L

I

L(OL)

d(ST)

*)

t

*) if the time constant of load is too large, open-load-status may occur

Figure 3a: Turn on into short circuit: shut down by overtemperature, restart by cooling

IN1

other channel: normal operation

t

ST

I

L1

V

I

OUT

L

I

L(SCp)

t

off(SC)

I

L(SCr)

ST

t

The initial peak current should be limited by the lamp and not by the initial short circuit current I

= 7.5 A typ. of the device.

L(SCp)

Heating up of the chip may require several milliseconds, depending on external conditions (t

off(SC)

vs. T

see page 11)

j,start

Infineon Technologies AG 12 2006-Mar-23

PROFET® ITS711L1

Figure 3b: Turn on into short circuit:

shut down by overtemperature, restart by cooling (two parallel switched channels 1 and 2)

IN1/2

I + I

L1 L2

I

L(SCp)

I

L(SCr)

t

off(SC)

ST1/2

Figure 4a: Overtemperature: Reset if T

<Tjt

j

IN

Figure 5a: Open load: detection in ON-state, open load occurs in on-state

IN1

IN2 channel 2: normal operation

V

OUT1

channel 1:

I

L1

open

t

d(ST OL1)

load

normal

t

d(ST OL2)

load

open

load

t

d(ST OL1)

ST

t

d(ST OL1)

= 30 µs typ., t

d(ST OL2)

= 20 µs typ

Figure 5b: Open load: detection in ON-state, turn on/off to open load

IN1

t

d(ST OL2)

t

IN2 channel 2: normal operation

ST

V

OUT1

V

OUT

I

L1

channel 1: open load

T

J

t

ST

t

d(ST)

t

d(ST OL4)

t

d(ST)

t

d(ST OL5)

t

The status delay time td(STOL4) allows to distinguish between the failure modes "open load in ON-state" and "overtemperature".

Infineon Technologies AG 13 2006-Mar-23

PROFET® ITS711L1

Figure 5c: Open load: detection in ON- and OFF-state

(with R

), turn on/off to open load

EXT

IN1

IN2 channel 2: normal operation

V

OUT1

I

L1

ST

channel 1: open load

t

d(ST)

t

d(ST)

t

d(ST OL5)

t

d(ST OL5)

impedance

depends on external circuitry because of high

Figure 6b: Undervoltage restart of charge pump

V

on

V

off-state

V

bb(u rst)

V

bb(under)

IN = high, normal load conditions. Charge pump starts at V

V

bb(u cp)

bb(ucp)

on-state

= 5.6 V typ.

bb(over)

V

bb(o rst)

V

ON(CL)

off-state

V

bb

Figure 6a: Undervoltage:

IN

V

bb

V

OUT

ST open drain

V

bb(under)

V

bb(u cp)

V

bb(u rst)

Figure 7a: Overvoltage:

IN

V

bb

OUT

V

ON(CL)

V

bb(over)

V

bb(o rst)

ST

t

Infineon Technologies AG 14 2006-Mar-23

PROFET® ITS711L1

Package and Ordering Code

Standard PG-DSO-20-9 Ordering Code

ITS711L1 SP000219532

All dimensions in millimetres

1) Does not include plastic or metal protrusions of 0.15 max per side

2) Does not include dambar protrusion of 0.05 max per side

Definition of soldering point with temperature T

:

s

upper side of solder edge of device pin 15.

Pin 15

Printed circuit board (FR4, 1.5mm thick, one layer 70µm, 6cm

power dissipation P

, nominal load current I

tot

and thermal resistance R

L(NOM)

2

active heatsink area) as a reference for max.

thja

Infineon Technologies AG 15 2006-Mar-23

PROFET® ITS711L1

Attention please!

The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Infineon Technologies AG 16 2006-Mar-23