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IXDH30N120D1
Datasheet (IXYS)
4 pgs88.4 Kb0

Datasheet IXDT30N120, IXDH30N120D1, IXDH30N120, IXDT30N120D1 Datasheet (IXYS)

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Page 1
High V oltage IGBT with optional Diode
Short Circuit SOA Capability Square RBSOA
IXDH 30N120 IXDH 30N120 D1 IXDT 30N120 IXDT 30N120 D1
C
G
G
V
CES
I
C25
V
CE(sat) typ
C
= 1200 V = 60 A = 2.4 V
TO-247 AD (IXDH)
E
IXDH 30N120 IXDH 30N120 D1
IXDT 30N120 IXDT 30N120 D1
E
TO--268 AA (IXDT)
Symbol Conditions Maximum Ratings V
CES
V
V
GES
V
GEM
I
C25
I
C90
I
CM
RBSOA VGE = ±15 V, TJ = 125°C, RG = 47 W ICM = 50 A
t
SC
(SCSOA) RG = 47 W, non repetitive P
C
T
J
T
stg
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
M
d
TJ = 25°C to 150°C 1200 V TJ = 25°C to 150°C; RGE = 20 kW 1200 V
Continuous ±20 V Transient ±30 V
TC = 25°C 60 A TC = 90°C 38 A TC = 90°C, tp = 1 ms 76 A
Clamped inductive load, L = 30 µH V VGE = ±15 V, VCE = V
, TJ = 125°C 10 µs
CES
CEK
< V
CES
TC = 25°C IGBT 300 W
Diode 135 W
-55 ... +150 °C
-55 ... +150 °C
Mounting torque 1.1/10 Nm/lb.in.
G = Gate, E = Emitter C = Collector , TAB = Collector
Features
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Advantages
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Weight 6g
Typical Applications
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Symbol Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
(BR)CES
V
GE(th)
I
CES
VGE = 0 V 1200 V IC = 1 mA, VCE = V VCE = V
CES
GE
TJ = 25°C 1.5 mA TJ = 125°C 2.5 mA
4.5 6.5 V
●
●
●
●
G
C
E
G
E
C (TAB)
C (TAB)
NPT IGBT technology low saturation voltage low switching losses square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy paralleling MOS input, voltage controlled optional ultra fast diode International standard packages
Space savings
High power density IXDT: surface mountable high power package
AC motor speed control DC servo and robot drives DC choppers Uninteruptible power supplies (UPS) Switch-mode and resonant-mode power supplies
I V
GES
CE(sat)
VCE = 0 V, VGE = ± 20 V ± 500 nA IC = 30 A, VGE = 15 V 2.4 2.9 V
© 2000 IXYS All rights reserved
031
1 - 4
Page 2
IXDH 30N120 IXDT 30N120 IXDH 30N120 D1 IXDT 30N120 D1
Symbol Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD Outline
C C C
Q t
d(on)
t
r
t
d(off)
t
f
E E
R R
ies
oes
res
g
on
off
thJC
thCK
VCE = 25 V, VGE = 0 V, f = 1 MHz 250 pF
IC = 30 A, VGE = 15 V, VCE = 0.5 V
CES
Inductive load, TJ = 125°C
IC = 30 A, VGE = ±15 V, VCE = 600 V, RG = 47 W
Package with heatsink compound 0.25 K/W
1650 pF
110 pF 120 nC 100 ns
70 ns
500 ns
70 ns
4.6 mJ
3.4 mJ
0.42 K/W
Reverse Diode (FRED) [D1 version only] Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Conditions min. typ. max. V
F
IF = 30 A, VGE = 0 V 2.5 2.7 V IF = 30 A, VGE = 0 V, TJ = 125°C 2.0 V
I
F
TC = 25°C 60 A TC = 90°C 35 A
I
RM
t
rr
t
rr
R
thJC
IF = 30 A, -diF/dt = 400 A/µs, VR = 600 V 20 A VGE = 0 V, TJ = 125°C 200 ns
IF = 1 A, -diF/dt = 100 A/µs, VR = 30 V, VGE = 0 V 40 ns
1 K/W
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209 A
2.2 2.54 .087 .102
1
A22.2 2.6 .059 .098 b 1.0 1.4 .040 .055
b
1.65 2.13 .065 .084
1
b22.87 3.12 .113 .123 C .4 .8 .016 .031
D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177
ÆP 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC
© 2000 IXYS All rights reserved
TO-268 AA Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.9 5.1 .193 .201
2.7 2.9 .106 .114
A
1
A2.02 .25 .001 .010 b 1.15 1.45 .045 .057
b
1.9 2.1 .75 .83
2
C .4 .65 .016 .026 D 13.80 14.00 .543 .551
E 15.85 16.05 .624 .632 E
13.3 13.6 .524 .535
1
e 5.45 BSC .215 BSC H 18.70 19.10 .736 .752 L 2.40 2.70 .094 .106
L1 1.20 1.40 .047 .055 L2 1.00 1.15 .039 .045 L3 0.25 BSC .010 BSC L4 3.80 4.10 .150 .161
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Page 3
IXDH 30N120 IXDT 30N120 IXDH 30N120 D1 IXDT 30N120 D1
60
TJ = 25°C
A
50
I
C
40
30
20
10
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VGE=17V
15V
13V 11V
9V
V
V
CE
60
= 125°C
T
J
A
50
I
C
40
30
20
10
0
0.00.51.01.52.02.53.03.5
Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics
60
VCE = 20V
= 25°C
T
J
A
50
I
C
40
30
20
10
0
567891011
V
V
GE
80
A
70 60
I
F
50
T
= 125°C
J
40 30 20 10
0
01234
Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of
free wheeling diode
VGE=17V
15V
13V 11V
9V
V
V
CE
TJ = 25°C
V
V
F
20
VCE = 600V
V
= 25A
I
C
15
V
GE
10
5
0
0 20 40 60 80 100 120 140
Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of
© 2000 IXYS All rights reserved
60
A
I
RM
t
rr
40
TJ = 125°C
20
I
RM
0
Q
G
nC
0 200 400 600 800 1000
-di/dt
= 600V
V
R
I
= 30A
F
IXDH30N120
A/ms
300
ns
200
100
0
t
rr
free wheeling diode
3 - 4
Page 4
IXDH 30N120 IXDT 30N120 IXDH 30N120 D1 IXDT 30N120 D1
W
E
t
off
d(off)
t
f
600
ns
500
t
400
300
200
100
0
A
14 12
mJ
10
E
on
8
t
d(on)
6
t
r
4
E
2
on
VCE = 600V V
= ±15V
GE
R
= 47
G
TJ = 125°C
0
0 1020304050
I
C
140
ns
120 100
t
80 60
W
40 20 0
A
6
mJ
5
E
off
4
3
2
1
0
0 1020304050
VCE = 600V V
GE
R
G
TJ = 125°C
I
C
= ±15V
= 47
Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching
times versus collector current times versus collector current
12
V
= 600V
CE
mJ
V
= ±15V
GE
10
= 25A
I
8
C
T
= 125°C
J
E
on
240
ns
t
d(on)
E
on
180
t
t
r
5
V
= 600V
CE
mJ
E
off
= ±15V
V
GE
4
I
= 25A
C
= 125°C
T
J
t
d(off)
E
3
6
120
2
4
2
0
0 40 80 120 160 200 240
R
G
W
60
0
1
0
0 40 80 120 160 200 240
R
G
1500
ns
1200
off
t
900
600
300
t
f
0
W
Fig. 9 Typ. turn on energy and switching Fig.10 Typ. turn off energy and switching
times versus gate resistor times versus gate resistor
60
A
50
I
CM
40
RG = 47 T
30
= 125°C
J
V
CEK
< V
20
10
0
0 200 400 600 800 1000 1200
Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance
RBSOA
© 2000 IXYS All rights reserved
10
K/W
1
Z
thJC
W
CES
0.1
0.01
0.001
single pulse
0.0001
V
V
CE
0.00001 0.0001 0.001 0.01 0.1 1
diode
IGBT
IXDH30N120
s
t
4 - 4
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