Datasheet IXDD414YI, IXDD414PI Datasheet (IXYS)

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Page 1

IXDD414PI / 414YI / 414CI

14 Amp Low-Side Ultrafast MOSFET Driver

Features

• Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes.

• Latch-Up Protected

• High Peak Output Current: 14A Peak

• Wide Operating Range: 4.5V to 25V

• Ability to Disable Output under Faults

• High Capacitive Load Drive Capability: 15nF in <30ns

• Matched Rise And Fall Times

• Low Propagation Delay Time

• Low Output Impedance

• Low Supply Current

Applications

• Driving MOSFETs and IGBTs

• Limiting di/dt under Short Circuit

• Motor Controls

• Line Drivers

• Pulse Generators

• Local Power ON/OFF Switch

• Switch Mode Power Supplies (SMPS)

• DC to DC Converters

• Pulse Transformer Driver

• Class D Switching Amplifiers

General Description

The IXDD414 is a high speed high current gate driver specifically designed to drive the largest MOSFETs and IGBTs to their minimum switching time and maximum practical frequency limits. The IXDD414 can source and sink 14A of peak current while producing voltage rise and fall times of less than 30ns. The input of the driver is compatible with TTL or CMOS and is fully immune to latch up over the entire operating range. Designed with small internal delays, cross conduction/current shootthrough is virtually eliminated in the IXDD414. Its features and wide safety margin in operating voltage and power make the IXDD414 unmatched in performance and value.

The IXDD414 incorporates a unique ability to disable the output under fault conditions. When a logical low is forced into the Enable input, both final output stage MOSFETs (NMOS and PMOS) are turned off. As a result, the output of the IXDD414 enters a tristate mode and achieves a Soft Turn-Off of the MOSFET/IGBT when a short circuit is detected. This helps prevent damage that could occur to the MOSFET/IGBT if it were to be switched off abruptly due to a dv/dt over-voltage transient.

The IXDD414 is available in the standard 8-pin P-DIP (PI), 5-pin TO-220 (CI) and in the TO-263 (YI) surface-mount package.

Figure 1 - Functional Diagram

200 k

First Release

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IXDD414PI/414YI/414CI

Absolute Maximum Ratings

Parameter Value

Supply Voltage 25 V All Other Pins -0.3 V to VCC + 0.3 V

Power Dissipation, T

8 Pin PDIP 975mW TO220, TO263 2W

Power Dissipation, T

AMBIENT

≤25 oC

CASE

≤25 oC

Operating Ratings

Parameter Value

Maximum Junction Temperature Operating Temperature Range Thermal Impedance (To Case)

TO220 (

)

150 oC

-40 oC to 85 oC

10 oC/W

TO220, TO263 12.5W

Derating Factors (to Ambient)

8 Pin PDIP

TO220, TO263 Storage Temperature Lead Temperature (10 sec)

7.6mW/oC 16mW/oC

-65 oC to 150 oC 300 oC

Electrical Characteristics

Unless otherwise noted, TA = 25 oC, 4.5V ≤ V All voltage measurements with respect to GND. IXDD414 configured as described in Test Conditions.

Symbol Parameter Test Conditions Min Typ Max Units

High input voltage 3.5 V VIL Low input voltage 0.8 V VIN Input voltage range -5 V IIN Input current

VOH High output voltage V VOL Low output voltage 0.025 V ROH Output resistance

@ Output high ROL Output resistance

@ Output L ow I

Peak output current VCC is 18V

PEAK

Continuous output

current V

High En Input Voltage 2/3 Vcc V

ENH

Low En Input Voltage 1/3 Vcc V

ENL

Enable voltage range - 0.3 Vcc + 0.3 V

tR Rise time CL=15nF Vcc=18V 23 25 29 ns tF Fall time CL=15nF Vcc=18V 21 22 26 ns t

On-time propagation

ONDLY

delay t

Off-time propagation

OFFDLY

delay t

Enable to output high

ENOH

dela y t ime t

Disable to output low

DOLD

disable delay time VCC Power supply voltage 4.5 18 25 V

ICC Power supply current V

REN Enable Pull-up Resistor 200

≤ 25V .

+ 0.3 V

0V ≤ V

≤ V

-10 10

µA

- 0.025 V

= 10mA, V

OUT

= 18V

600 1000

mΩ

= 10mA, V

OUT

= 18V 600 1000

mΩ

14 A

8 Pin Dip (PI) TO220 (C I) , TO263 (YI)

3 6 A

CL=15nF Vcc=18V 29 30 33 ns CL=15nF Vcc=18V 29 31 34 ns Vcc=18V 40 ns Vcc=18V 30 ns

= 3.5V = 0V

= + VCC

1 0 3

10 10

A µA kΩ

Page 3

Pin Configurations

VCC

GND

IXDD414PI/414YI/414CI

IXDD414CI

VCC

GND

1 2 3 4 5

Vcc OUT GND IN EN

OUT

D D

OUT

4 1 4

IXDD414YI

8 PIN DIP (PI)

TO220 (CI) TO263 (YI)

Pin Description

SYMBOL FUNCTION DESCRIPTION

VCC Supply Voltage

Positiv e power-supply v oltage input. This pin provides power to the entire chip. T he r ange f or this voltage is from 4.5V to 25V.

IN Input Input signal-T TL or CMOS compatible.

EN Enable

OUT Output

The system enabl e pin. This pi n, when driven low, di sables the chi p, forcing high im pedance stat e to the output. Driver Output. For application purposes, this pin is connected, through a resistor, to Gate of a MOSFET/IGBT. The system ground pin. Inter nally connected t o all circuit ry, this pin

GND Ground

provides ground reference for the entire chip. This pin should be connected to a low noise analog ground plane for optimum performance.

Note 1: Operating the device beyond parameters with listed “absolute maximum ratings” may cause permanent damage to the device. Typical values indicate conditions for which the device is intended to be functional, but do not guarantee specific performance limits. The guaranteed specifications apply only for the test conditions listed. Exposure to absolute maximum rated conditions for extended periods may affect device reliability.

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD procedures when handling and assembling this component.

Figure 2 - Characteristics Test Diagram

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)

Typical Performance Characteristics

IXDD414PI/414YI/414CI

Fig. 3

Rise Time vs. Supply Voltage

CL=15,000 pF

7,500 pF

Rise Time (ns)

81012141618

3,600 pF

Supply Voltage (V)

Fig. 5

Rise And Fall Times vs. Temperature

= 15 nF, Vcc = 18V

Fig. 4

Fall Time (ns)

81012141618

Fall Time vs. Supply Voltage

CL=15,000 pF

7,500 pF

3,600 pF

Supply Voltage (V)

Fig. 6

Rise Time vs. Load C apacitance

14V

10V

12V

18V

16V

Time (ns)

-40 -20 0 20 40 60 80 100 120

Temperature (°C

Fig. 7

Fall Time vs. Load Capacitance

14V

12V

Fall Time (ns)

0k 5k 10k 15k 20k

Load Capa citance (pF)

16V

10V

18V

Rise Time (ns)

0k 5k 10k 15k 20k

Load Capa citance (pF)

Fig. 8

3.2

3.0

2.8

2.6

2.4

2.2

Max / Min Input (V)

2.0

1.8

1.6

-60 -40 -20 0 20 40 60 80 100

Max / Min Input vs. Temperature

=18V CL=15nF

Minimum Input High

Maximum Input Low

Temperature (oC)

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IXDD414PI/414YI/414CI

Fig. 9

Supply Current vs. Load Capacitance

Vcc=18V

1000

2 MHz

100

1 MHz 500 kHz

Supply Current (mA)

100 kHz

50 kHz

1k 10k 100k

Load Capa citance (pF)

Fig. 11

Supply Current vs. Load Capacitance

Vcc=12V

1000

100

2 MHz

1 MHz 500 kHz

Supply Current (mA)

100 kHz

50 kHz

1k 10k 100k

Load Capa citance (pF)

Fig. 10

1000

100

Supply Current (mA)

0.1

Fig. 12

1000

100

Supply Current (mA )

0.1

Supply Current vs. Frequency

Vcc=18V

CL= 30 nF

15 nF

5000 pF

2000 pF

10 100 1000 10000

Frequency (kHz)

Supply Current vs. Frequency

Vcc=12V

CL = 30 nF

15 nF

5000 pF

2000 pF

10 100 1000 10000

Frequency (kHz)

Fig. 13

Supply Current vs. Load Capacitance

Vcc=8V

1000

100

2 MHz 1 MHz

500 kHz

Supply Current (mA)

100 kHz

50 kHz

1k 10k 100k

Load Capa citance (pF)

Fig. 14

Supply Current vs. Frequency

Vcc=8V

1000

100

Supply Current (mA)

0.1 10 100 1000 10000

CL= 30 nF

15 nF

5000 pF

2000 pF

Frequency (kHz)

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IXDD414PI/414YI/414CI

(

)

Fig. 15

Propagation Delay (ns)

Propagation Delay vs. Supply Voltage

=15nF VIN=5V@1kHz

OFFDLY

ONDLY

8 1012141618

Supply Voltage (V)

Fig. 17

Time (ns)

Propagation Delay Times vs. Temperature

= 2500pF, VCC = 18V

ONDLY

OFFDLY

Fig. 16

Propagation Delay (ns)

Propagation Delay vs. Input Voltage

=15nF VCC=15V

ONDLY

OFFDLY

2 4 6 8 10 12

Input Voltage (V)

Fig. 18

0.60

0.58

0.56

0.54

Quiescent Supply Current vs. Temperature

=18V VIN=5V@1kHz

-40-200 20406080100120

Temperature (°C

Fig. 19

P channel Output Current Vs. Temperature

=18V CL=.1uF

P Channel Output Current (A)

-40-200 20406080100

Temperature (oC)

0.52

Quiescent Supply Current (mA)

0.50

-40-200 20406080

Fig. 20

Temperature

N C hannel Output Current vs. Temperature

=18V CL=.1uF

N C hannel Output Current (A)

-40-200 20406080100

Temperature (oC)

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IXDD414PI/414YI/414CI

Fig. 21

Enable Threshold (V)

Enable Threshold vs. Supply Voltage

8 101214161820222426

Supply Voltage (V)

Fig. 23

Low-State Output Resistance

Vs. Supply Voltage

1.0

0.8

0.6

0.4

0.2

Low-State Output Resistance (Ohm s)

0.0 8

10 15 20 25

Supply Voltage (V)

Fig. 22

1.0

0.8

0.6

0.4

0.2

High State Output Resistance (Ohm )

0.0 8

Fig. 24

-2

-4

-6

-8

-10

-12

-14

-16

-18

-20

P Channel Output Current (A)

-22

-24 8

High State Output Resistance

vs. Supply Voltage

10 15 20 25

Supply Voltage (V)

VCC vs. P Channel Output Current

=.1uF VIN=0-5V@1kH z

10 15 20 25

Vcc

Fig. 25

N Channel Output Current (A)

Vcc vs. N Channel Output Current

=.1uF VIN=0-5V@ 1kHz

24 22 20 18 16 14 12 10

8 6 4 2 0

10 15 20 25

Vcc

Figure 26 - Typical Application Short Circuit di/dt Limit

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APPLICATIONS INFORMATION

Short Circuit di/dt Limit

IXDD414PI/414YI/414CI

A short circuit in a high-power MOSFET module such as the VM0580-02F, (580A, 200V), as shown in Figure 26, can cause the current through the module to flow in excess of 1500A for 10µs or more prior to self-destruction due to thermal runaway. For this reason, some protection circuitry is needed to turn off the MOSFET module. However, if the module is switched off too fast, there is a danger of voltage transients occuring on the drain due to Ldi/dt, (where L represents total inductance in series with drain). If these voltage transients exceed the MOSFET's voltage rating, this can cause an avalanche breakdown.

The IXDD414 has the unique capability to softly switch off the high-power MOSFET module, significantly reducing these Ldi/dt transients.

Thus, the IXDD414 helps to prevent device destruction from both dangers; over-current, and avalanche breakdown due to di/dt induced over-voltage transients.

The IXDD414 is designed to not only provide ±14A under normal conditions, but also to allow it's output to go into a high impedance state. This permits the IXDD414 output to control a separate weak pull-down circuit during detected overcurrent shutdown conditions to limit and separately control d turnoff. This circuit is shown in Figure 27.

VGS

/dt gate

Referring to Figure 27, the protection circuitry should include a comparator, whose positive input is connected to the source of the VM0580-02. A low pass filter should be added to the input of the comparator to eliminate any glitches in voltage caused by the inductance of the wire connecting the source resistor to

ground. (Those glitches might cause false triggering of the comparator).

The comparator's output should be connected to a SRFF(Set Reset Flip Flop). The flip-flop controls both the Enable signal, and the low power MOSFET gate. Please note that CMOS 4000series devices operate with a V 18 VDC being the maximum allowable limit).

range from 3 to 15 VDC, (with

A low power MOSFET, such as the 2N7000, in series with a resistor, will enable the VMO580-02F gate voltage to drop gradually. The resistor should be chosen so that the RC time constant will be 100us, where "C" is the Miller capacitance of the VMO580-02F.

For resuming normal operation, a Reset signal is needed at the SRFF's input to enable the IXDD414 again. This Reset can be generated by connecting a One Shot circuit between the IXDD414 Input signal and the SRFF restart input. The One Shot will create a pulse on the rise of the IXDD414 input, and this pulse will reset the SRFF outputs to normal operation.

When a short circuit occurs, the voltage drop across the lowvalue, current-sensing resistor, (Rs=0.005 Ohm), connected between the MOSFET Source and ground, increases. This triggers the comparator at a preset level. The SRFF drives a low input into the Enable pin disabling the IXDD408 output. The SRFF also turns on the low power MOSFET, (2N7000).

In this way, the high-power MOSFET module is softly turned off by the IXDD414, preventing its destruction.

Figure 27 - Application Test Diagram

One Shot Circuit

NOT1

CD4049A

Ros

1Mohm

Cos 1pF

NAND

CD4011A

VCC

SR Flip-Flop

VIN

NOT2

CD4049A

NOT3

CD4049A

VCC VCCA

IN EN

GND SUB

NOR1

CD4001A

NOR2

CD4001A

IXDD414

OUT

Rcomp 5kohm

Ccomp

0.1ohm

High_Power VMO58 0-02F

20nH

10uH

Low_Power 2N7002/PLP

V+ V-

REF

1ohm

10kohm

R+

C+

100pF

Rsh

1600ohm

Comp LM339

1pF

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IXDD414PI/414YI/414CI

Supply Bypassing and Grounding Practices, Output Lead inductance

When designing a circuit to drive a high speed MOSFET utilizing the IXDD414, it is very important to keep certain design criteria in mind, in order to optimize performance of the driver. Particular attention needs to be paid to Supply Bypassing, Grounding, and minimizing the Output Lead Inductance.

Say, for example, we are using the IXDD408 to charge a 5000pF capacitive load from 0 to 25 volts in 25ns.

Using the formula: I= ∆V C / ∆t, where ∆V=25V C=5000pF & ∆t=25ns we can determine that to charge 5000pF to 25 volts in 25ns will take a constant current of 5A. (In reality, the charging current won’t be constant, and will peak somewhere around 8A).

SUPPLY BYPASSING

In order for our design to turn the load on properly, the IXDD414 must be able to draw this 5A of current from the power supply in the 25ns. This means that there must be very low impedance between the driver and the power supply. The most common method of achieving this low impedance is to bypass the power supply at the driver with a capacitance value that is a magnitude larger than the load capacitance. Usually, this would be achieved by placing two different types of bypassing capacitors, with complementary impedance curves, very close to the driver itself. (These capacitors should be carefully selected, low inductance, low resistance, high-pulse currentservice capacitors). Lead lengths may radiate at high frequency due to inductance, so care should be taken to keep the lengths of the leads between these bypass capacitors and the IXDD414 to an absolute minimum.

GROUNDING

In order for the design to turn the load off properly, the IXDD414 must be able to drain this 5A of current into an adequate grounding system. There are three paths for returning current that need to be considered: Path #1 is between the IXDD414 and it’s load. Path #2 is between the IXDD414 and it’s power supply. Path #3 is between the IXDD414 and whatever logic is driving it. All three of these paths should be as low in resistance and inductance as possible, and thus as short as practical. In addition, every effort should be made to keep these three ground paths distinctly separate. Otherwise, (for instance), the returning ground current from the load may develop a voltage that would have a detrimental effect on the logic line driving the IXDD414.

OUTPUT LEAD INDUCTANCE

Of equal importance to Supply Bypassing and Grounding are issues related to the Output Lead Inductance. Every effort should be made to keep the leads between the driver and it’s load as short and wide as possible. If the driver must be placed farther than 2” from the load, then the output leads should be treated as transmission lines. In this case, a twisted-pair should be considered, and the return line of each twisted pair should be placed as close as possible to the ground pin of the driver, and connect directly to the ground terminal of the load.

TTL to High Voltage CMOS Level Translation

The enable (EN) input to the IXDD414 is a high voltage CMOS logic level input where the EN input threshold is ½ VCC, and may not be compatible with 5V CMOS or TTL input levels. The IXDD414 EN input was intentionally designed for enhanced noise immunity with the high voltage CMOS logic levels. In a typical gate driver application, V EN input threshold at 7.5V, a 5V CMOS logical high input applied to this typical IXDD414 application’s EN input will be misinterpreted as a logical low, and may cause undesirable or unexpected results. The note below is for optional adaptation of TTL or 5V CMOS levels.

The circuit in Figure 28 alleviates this potential logic level misinterpretation by translating a TTL or 5V CMOS logic input to high voltage CMOS logic levels needed by the IXDD414 EN input. From the figure, VCC is the gate driver power supply, typically set between 8V to 20V, and VDD is the logic power supply, typically between 3.3V to 5.5V. Resistors R1 and R2 form a voltage divider network so that the Q1 base is positioned at the midpoint of the expected TTL logic transition levels.

A TTL or 5V CMOS logic low, V the Q1 emitter will drive it on. This causes the level translator

=~<0.8V, input applied to

TTLLOW

output, the Q1 collector output to settle to V V

=<~2V, which is sufficiently low to be correctly

TTLLOW

interpreted as a high voltage CMOS logic low (<1/3VCC=5V for VCC =15V given in the IXDD414 data sheet.)

A TTL high, V V

5VCMOSHIGH

Figure 28 will cause Q1 to be biased off. This results in Q1

=~>3.5V, applied to the EN input of the circuit in

=>~2.4V, or a 5V CMOS high,

TTLHIGH

collector being pulled up by R3 to VCC=15V, and provides a high voltage CMOS logic high output. The high voltage CMOS logical EN output applied to the IXDD414 EN input will enable it, allowing the gate driver to fully function as an 8 Amp output driver.

The total component cost of the circuit in Figure 28 is less than $0.10 if purchased in quantities >1K pieces. It is recommended that the physical placement of the level translator circuit be placed close to the source of the TTL or CMOS logic circuits to maximize noise rejection.

Figure 28 - TTL to High Voltage CMOS Level Translator

(From Gate Driver

Power Supply)

DD (From Logic Power Supply)

3.3K

3.3K R2

10K

Q1 2N3904

=15V and the

CESATQ1

High Voltage

CMOS Output

(To IXDD414 EN Input)

TTL

Input )

Page 10

IXDD414PI/414YI/414CI

Ordering Information

Part Number Packag e Ty pe Temp. Range Grade

IXDD414PI 8-Pin PDIP IXDD414YI 5-Pin TO-263 IXDD414CI 5-Pin TO-220

NOTE: Mounting or solder tabs on all

packages are connected to ground

-40°C to +85°C

Industrial Industrial Industrial

IXYS Corporation 3540 Bassett St; Santa Clara, CA 95054 Tel: 408-982-0700; Fax: 408-496-0670 e-mail: [email protected]

IXYS Semiconductor GmbH Edisonstrasse15 ; D-68623; Lampertheim Tel: +49-6206-503-0; Fax: +49-6206-503627 e-mail: [email protected]

Directed Energy, Inc. An IXYS Company 2401 Research Blvd. Ste. 108, Ft. Collins, CO 80526 Tel: 970-493-1901; Fax: 970-493-1903 e-mail: [email protected]

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