Page 1
IXDN404PI / N404SI / N404SI-16 IXDI404PI / I404SI / I404SI-16
IXDF404PI / F404SI / F404SI-16
4 Ampere Dual Low-Side Ultrafast MOSFET Drivers
Features
• Built using the advantages and compatibility
of CMOS and IXYS HDMOSTM processes
• Latch-Up Protected Over Entire
Operating Range
• High Peak Output Current: 4A Peak
• Wide Operating Range: 4.5V to 25V
• High Capacitive Load
Drive Capability: 1800pF in <15ns
• Matched Rise And Fall Times
• Low Propagation Delay Time
• Low Output Impedance
• Low Supply Current
• Two Drivers in Single Chip
Applications
• Driving MOSFETs and IGBTs
• Motor Controls
• Line Drivers
• Pulse Generators
• Local Power ON/OFF Switch
• Switch Mode Power Supplies (SMPS)
• DC to DC Converters
• Pulse Transformer Driver
• Class D Switching Amplifiers
• Limiting di/dt Under Short Circuit
General Description
The IXDN404/IXDI404/IXDF404 is comprised of two 4 Ampere
CMOS high speed MOSFET drivers. Each output can source
and sink 4A of peak current while producing voltage rise and
fall times of less than 15ns to drive the latest IXYS MOSFETs
& IGBT's. The input of the driver is compatible with TTL or
CMOS and is fully immune to latch up over the entire operating
range. A patent-pending circuit virtually eliminates CMOS
power supply cross conduction and current shoot-through.
Improved speed and drive capabilities are further enhanced by
very low, matched rise and fall times.
The IXDN404 is configured as a dual non-inverting gate driver,
the IXDI404 is a dual inverting gate driver, and the IXDF404 is a
dual inverting + non-inverting gate driver.
The IXDN404/IXDI404/IXDF404 family are available in the
standard 8 pin P-DIP (PI), SOP-8 (SI) and SOP-16 (SI-16)
packages.
Figure 1 - IXDN404 Dual 4A Non-Inverting Gate Driver Functional Block Diagram
P
N
P
N
IN A
IN B
GND
* Patent Pending
Copyright © IXYS CORPORATION 2001
ANTI-CROSS
CONDUCTION
CIRCUIT *
ANTI-CROSS
CONDUCTION
CIRCUIT *
Vcc
OUT A
OUT B
First Release
Page 2
IXDN404PI / N404SI / N404SI-16 IXDN404PI / N404SI / N404SI-16
IXDF404PI / F404SI / F404SI-16
Figure 2 - IXDI404 Dual Inverting 4A Gate Driver Functional Block Diagram
Vcc
P
OUT A
N
P
OUT B
N
IN A
IN B
GND
ANTI-CROSS
CONDUCTION
CIRCUIT *
ANTI-CROSS
CONDUCTION
CIRCUIT *
Figure 3 - IXDF404 Inverting + Non-Inverting 4A Gate Driver Functional Block Diagram
IN A
IN B
GND
* Patent Pending
ANTI-CROSS
CONDUCTION
ANTI-CROSS
CONDUCTION
2
CIRCUIT *
CIRCUIT *
Vcc
P
OUT A
N
P
OUT B
N
Page 3
IXDN404PI / N404SI / N404SI-16 IXDI404PI / I404SI / I404SI-16
IXDF404PI / F404SI / F404SI-16
Absolute Maximum Ratings (Note 1)
Parameter Value
Supply Voltage 25V
All Other Pins -0.3V to VCC + 0.3V
Junction Temperature
Storage Temperature
Soldering Lead Temperature
(10 seconds maximum)
150oC
-65oC to 150oC
300oC
Operating Ratings
Parameter Value
Operating Temperature Range
Thermal Impedance (Junction To Ambient)
8 Pin PDIP (PI) (θJA)
8 Pin SOIC (SI) (θJA)
16 Pin SOIC (SI-16) (θ
)
JA
-40oC to 85oC
120oC/W
110oC/W
110oC/W
Electrical Characteristics
Unless otherwise noted, TA = 25 oC, 4.5V ≤ V
All voltage measurements with respect to GND. Device configured as described in Test Conditions. All specifications are for one channel.
Symbol Parameter Test Conditions Min Typ Max Units
V
IH
High input voltage 3.5 V
VIL Low input voltage 0.8 V
VIN Input voltage range -5 V
IIN Input current
VOH High output voltage V
VOL Low output voltage 0.025 V
ROH Output resistance
@ Output High
ROL Output resistance
@ Output Low
I
Peak output current VCC is 18V
PEAK
I
Continuous output
DC
current
tR Rise time CL=1800pF Vcc=18V 11 12 15 ns
tF Fall time CL=1800pF Vcc=18V 12 14 17 ns
t
On-time propagation
ONDLY
delay
t
Off-time propagation
OFFDLY
delay
VCC Power supply voltage 4.5 18 25 V
I
CC
Power supply current V
Ordering Information
Part Number Package Type Temp. Range Configuration
IXDN404PI 8-Pin PDIP
IXDN404SI 8-Pin SOIC
IXDN404SI-16 16-Pin SOIC
IXDI404PI 8-Pin PDIP
IXDI404SI 8-Pin SOIC
IXDI404SI-16 16-Pin SOIC
IXDF404PI 8-Pin PDIP
IXDF404SI 8-Pin SOIC
IXDF404SI-16 16-Pin SOIC
NOTE: Mounting or solder tabs on all packages are connected to ground
≤ 25V .
CC
+ 0.3 V
CC
0V ≤ V
IN
≤ V
CC
-10 10
µA
- 0.025 V
CC
I
= 10mA, V
OUT
CC
= 18V
1.5 3
Ω
I
= 10mA, V
OUT
= 18V 1.5 3
CC
Ω
4 A
1 A
CL=1800pF Vcc=18V 33 34 38 ns
CL=1800pF Vcc=18V 28 30 35 ns
IN
V
IN
V
IN
= 3.5V
= 0V
= + VCC
-40°C to +85°C
-40°C to +85°C
-40°C to +85°C
1 0 3
Dual Non Inverting
Dual Inverting
Inverting + Non Inverting
10
10
mA
µA
µA
3
Page 4
IXDN404PI / N404SI / N404SI-16 IXDN404PI / N404SI / N404SI-16
IXDF404PI / F404SI / F404SI-16
Pin Description
SYMBOL FUNCTION DESCRIPTION
IN A A Channel Input A Channel Input signal-TTL or CMOS compatible.
The system ground pin. Internally connected to all circuitry, this pin provides
GND Ground
IN B B Channel Input B Channel Input signal-TTL or CMOS compatible.
OUT B B Channel Output
VCC Supply Voltage
OUT A A Channel Output
ground reference for the entire chip. Th is pin should be connected to a low
noise analog ground plane for optimum performance.
B Channel Driver output. For application purposes, this pin is connected via
a resistor to a gate of a MOSFET/IGBT.
Positive power-supply voltage input. This pin provides power to the entire
chip. The range for this voltage is from 4.5V to 25V.
A Channel Driver output. For application purposes, this pin is connected via
a resistor to a gate of a MOSFET/IGBT.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD procedures when
handling and assembling this component.
Note 1: Operating the device beyond parameters with listed “Absolute Maximum Ratings” may cause permanent
damage to the device. Typical values indicate conditions for which the device is intended to be functional, but do not
guarantee specific performance limits. The guaranteed specifications apply only for the test conditions listed.
Exposure to absolute maximum rated conditions for extended periods may affect device reliability.
Figure 4 - Characteristics Test Diagram
Vcc
10uF
25V
1
NC
2
In A
3
Gnd
4
In B Out B
Out A
Agilent 1147A
Current Probe
NC
Vcc
8
7
6
5
Agilent 1147A
Current Probe
1800 pF1800 pF
4
Page 5
IXDN404PI / N404SI / N404SI-16 IXDI404PI / I404SI / I404SI-16
)
IXDF404PI / F404SI / F404SI-16
Typical Performance Characteristics
Fig. 5
40
35
30
25
20
15
Rise Time (ns)
10
5
0
8 1012141618
Rise Time vs. Supply Voltage
CL=4700 pF
1800 pF
200 pF
S u p p ly Vo lta g e (V)
Fig. 7
25
20
Rise And Fall Times vs. Case Temperature
=1nF VCC=18V
C
L
Fig. 6
60
50
40
30
Fall Time (ns)
20
10
0
81012141618
Fall Time vs. Supply Voltage
CL=4700 pF
1800 pF
200 pF
Supply Voltage (V)
Fig. 8
80
70
60
Rise Time vs. Load C apacitance
8V
10V
15
t
F
10
Time (ns)
t
R
5
0
-40-200 20406080100120
Temperature (°C
Fig. 9
100
90
80
70
60
50
40
Fall Time (ns)
30
20
10
0
0k 2k 4k 6k 8k 10k
F a ll T ime v s . L oad Ca p a c itance
14V
16V
Load Capacitance (pF)
8V
10V
12V
18V
50
40
30
Rise Time (ns)
20
10
0
0k 2k 4k 6k 8k 10k
14V
Load Capa citance (pF)
Fig. 10
3.2
3.0
2.8
2.6
2.4
2.2
Max / Min Input (V)
2.0
1.8
1.6
-60 -40 -20 0 20 40 60 80 100
Max / Min Input vs. Case Temperature
=18V CL=1nF
V
CC
Minimum Input High
Maximum Input Low
Temperature (oC)
12V
18V
16V
5
Page 6
IXDN404PI / N404SI / N404SI-16 IXDN404PI / N404SI / N404SI-16
S
l
C
t
(
A)
S
l
C
t
(
A)
S
l
C
t
(
A)
IXDF404PI / F404SI / F404SI-16
Fig. 11
100
80
60
40
Supply Current vs. Load Capacitance
Vcc=18V
2 MHz
1 MHz
500 KHz
Supply Current (mA)
20
0
0.1k 1.0k 10.0k
Load Capa citance (pF)
Fig. 13
100
80
Supply Current vs. Load Capacitance
Vcc=12V
100 kHz
50 kHz
10 kHz
Fig. 12
100
10
m
1
Supply Current vs. Frequency
Vcc=18V
CL= 1800 pF
200 pF
urren
y
upp
0.1
0.01
1 10 100 1000
Frequency (kHz)
Fig. 14
100
10
Supply Current vs. Frequency
Vcc=12V
CL= 1800 pF
1000 pF
60
1 MHz
2 MHz
40
500 KHz
Supply Current (mA)
20
0
0.1k 1.0k 10.0k
100 kHz
50 kHz
10 kHz
Load Cap acitance (pF)
Fig. 15
100
80
60
40
Supply Current (mA)
20
0
0.1k 1.0k 10.0k
Supply Current vs. Load Capacitance
Vcc=8V
1 MHz
2 MHz
10 kHz
500 KHz
100 kHz
50 kHz
Load Cap acitance (pF)
m
1
urren
y
upp
0.1
0.01
1 10 100 1000
Frequency (kHz)
Fig. 16
100
10
m
1
Supply Current vs. Frequency
Vcc=8V
CL= 1800 pF
urren
y
upp
0.1
0.01
1 10 100 1000
Frequency (kHz)
1000 pF
200 pF
1000 pF
200 pF
6
Page 7
IXDN404PI / N404SI / N404SI-16 IXDI404PI / I404SI / I404SI-16
(
)
IXDF404PI / F404SI / F404SI-16
Fig. 17
Propagation Delay (ns)
Propagation Delay vs. Supply Voltage
=1800pF VIN=5V@1kHz
C
50
40
30
20
10
0
8 1012141618
L
t
ONDLY
t
OFFDLY
Supply Voltage (V)
Fig. 19
60
55
50
45
40
35
30
Time (ns)
25
20
15
10
Fig. 21
6
Propagation Delay Times vs. Temperature
=1800pF VCC=18V
C
L
t
ONDLY
t
OFFDLY
-40-200 20406080100120
Temperature
°
C
P Channel Output Current Vs. Temperature
V
=18V, CL=1000pF
CC
Fig. 18
60
50
40
30
20
Propagation Delay vs. Input Voltage
=1800pF VCC=15V
C
L
t
ONDLY
t
OFFDLY
Propagation Delay (ns)
10
0
024681012
Input Voltage (V)
Fig. 20
0.26
0.24
0.22
0.20
0.18
0.16
Quiescent Supply Current vs. Temperature
=18V VIN=5V@1kHz CL=1000pF
V
CC
Quiescent Vcc Input Current (mA)
0.14
-40-200 20406080
Temperature (oC)
Fig. 22
N Channel Output Current Vs. Temperature
V
=18V, CL=1000pF
6
CC
5
4
P Channel Output Current (A)
3
-40-200 20406080100
Temperature (oC)
5
4
N Channel Output Current (A)
3
-40-20020406080100
Temperature (oC)
7
Page 8
IXDN404PI / N404SI / N404SI-16 IXDN404PI / N404SI / N404SI-16
IXDF404PI / F404SI / F404SI-16
Fig. 23
5
4
3
2
1
High State Output Resistance (Ohm)
0
8
Fig. 25
0
High State Output Resistance
vs. Supply Voltage
10 15 20 25
Supply Voltage (V)
Vcc vs. P Channel Output Current
Fig. 24
Fig. 22
3.0
2.0
1.0
Low-State Output Resistance (Ohms)
0.0
8
Fig. 26
8
Lo w-S ta te O u tp ut Re s is ta n c e
Vs. Supply Voltage
10 15 20 25
Supply Voltage (V)
VCC vs. N Channel Output Current
-2
-4
-6
P Channel Output Current (A)
-8
8
10 15 20 25 30
Vcc
6
4
2
N Channel Output Current (A)
0
8
10 15 20 25 30
Vcc
8
Page 9
PIN CONFIGURATIONS
IXDN404PI / N404SI / N404SI-16 IXDI404PI / I404SI / I404SI-16
IXDF404PI / F404SI / F404SI-16
1
NC
2
IN A
3
GND
4
INB
8 Lead PDIP (PI)
8 Pin SOIC (SI)
IXDN404
NC
1
IN A
2
NC
3
GND
4
5
GND
NC
6
IN B
7
NC
8
16 Pin SOIC
IXDN404SI-16
NC
OUT A
OUT B
NC
OUT A
OUT A
VCC
VCC
OUT B
OUT B
NC
8
7
V
6
S
5
16
15
14
13
12
11
10
9
1
NC
2
IN A
3
GND
4
INB
8 Lead PDIP (PI)
8 Pin SOIC (SI)
IXDI404
NC
1
2
IN A
NC
3
GND
4
5
GND
NC
6
IN B
7
NC
8
16 Pin SOIC
IXDI404SI-16
NC
OUT A
OUT B
OUT A
OUT A
VCC
VCC
OUT B
OUT B
V
NC
NC
8
7
6
S
5
16
15
14
13
12
11
10
9
Supply Bypassing, Grounding Practices And Output Lead inductance
When designing a circuit to drive a high speed MOSFET
utilizing the IXDN404/IXDI404/IXDF404, it is very important to
observe certain design criteria in order to optimize performance
of the driver. Particular attention needs to be paid to Supply
Bypassing, Grounding, and minimizing the Output Lead
Inductance.
Say, for example, we are using the IXDN404 to charge a 2500pF
capacitive load from 0 to 25 volts in 25ns.
Using the formula: I= ∆V C / ∆t, where ∆V=25V C=2500pF &
∆t=25ns, we can determine that to charge 2500pF to 25 volts
in 25ns will take a constant current of 2.5A. (In reality, the
charging current won’t be constant, and will peak somewhere
around 4A).
SUPPLY BYPASSING
In order for our design to turn the load on properly, the IXDN404
must be able to draw this 2.5A of current from the power supply
in the 25ns. This means that there must be very low impedance
between the driver and the power supply. The most common
method of achieving this low impedance is to bypass the power
supply at the driver with a capacitance value that is a magnitude
larger than the load capacitance. Usually, this would be
achieved by placing two different types of bypassing capacitors,
with complementary impedance curves, very close to the driver
itself. (These capacitors should be carefully selected, low
inductance, low resistance, high-pulse current-service
capacitors). Lead lengths may radiate at high frequency due
to inductance, so care should be taken to keep the lengths of
the leads between these bypass capacitors and the IXDN404
to an absolute minimum.
GROUNDING
In order for the design to turn the load off properly, the IXDN404
must be able to drain this 2.5A of current into an adequate
grounding system. There are three paths for returning current
that need to be considered: Path #1 is between the IXDN404
and its load. Path #2 is between the IXDN404 and its power
supply. Path #3 is between the IXDN404 and whatever logic is
driving it. All three of these paths should be as low in resistance
and inductance as possible, and thus as short as practical. In
addition, every effort should be made to keep these three
ground paths distinctly separate. Otherwise, the returning
ground current from the load may develop a voltage that would
have a detrimental effect on the logic line driving the IXDN404.
OUTPUT LEAD INDUCTANCE
Of equal importance to Supply Bypassing and Grounding are
issues related to the Output Lead Inductance. Every effort
should be made to keep the leads between the driver and its
load as short and wide as possible. If the driver must be placed
farther than 2” (5mm) from the load, then the output leads
should be treated as transmission lines. In this case, a twistedpair should be considered, and the return line of each twisted
pair should be placed as close as possible to the ground pin
of the driver, and connected directly to the ground terminal
of the load.
1
NC
2
IN A
OUT A
3
GND
4
INB
OUT B
8 Lead PDIP (PI)
8 Pin SOIC (SI)
IXDF404
NC
1
2
3
4
5
6
7
8
OUT A
IN A
NC
OUT A
GND
GND
NC
OUT B
IN B
OUT B
NC
16 Pin SOIC
IXDF404SI-16
NC
V
NC
VCC
VCC
NC
8
7
6
S
5
16
15
14
13
12
11
10
9
9
Page 10
IXDN404PI / N404SI / N404SI-16 IXDN404PI / N404SI / N404SI-16
IXDF404PI / F404SI / F404SI-16
10
IXYS Corporation
3540 Bassett St; Santa Clara, CA 95054
Tel: 408-982-0700; Fax: 408-496-0670
e-mail: sales@ixys.net
IXYS Semiconductor GmbH
Edisonstrasse15 ; D-68623; Lampertheim
Tel: +49-6206-503-0; Fax: +49-6206-503627
e-mail: marcom@ixys.de
Directed Energy, Inc.
An IXYS Company
2401 Research Blvd. Ste. 108, Ft. Collins, CO 80526
Tel: 970-493-1901; Fax: 970-493-1903
e-mail: deiinfo@directedenergy.com
Doc #9200-0234 R1
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