© 2000 IXYS All rights reserved
1 - 4
031
IXYS reserves the right to change limits, test conditions and dimensions.
Features
• High Voltage BIMOSFET
TM
- substitute for high voltage MOSFETs
with significantly lower voltage drop
- fast switching for high frequency
operation
- reverse conduction capability
• ISOPLUS i4-PAC
TM
high voltage package
- isolated back surface
- enlarged creepage towards heatsink
- enlarged creepage between high
voltage pins
- application friendly pinout
- high reliability
- industry standard outline
Applications
• switched mode power supplies
• DC-DC converters
• resonant converters
• lamp ballasts
• laser generators, x ray generators
IGBT
Symbol Conditions Maximum Ratings
V
CES
TVJ = 25°C to 150°C IXBF 40N140 1400 V
IXBF 40N160 1600 V
V
GES
±
20 V
I
C25
TC = 25°C 28 A
I
C90
TC = 90°C 16 A
I
CM
VGE =
15/0
V; RG = 22 W; TVJ = 125°C 40 A
V
CEK
RBSOA, Clamped inductive load; L = 100 µH 0.8V
CES
P
tot
TC = 25°C 250 W
Symbol Conditions Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min. typ. max.
V
CE(sat)
IC = 20 A; VGE = 15 V; TVJ = 25°C 6.2 7.1 V
TVJ = 125°C 6.9 V
V
GE(th)
IC = 2 mA; VGE = V
CE
48V
I
CES
V
CE
= 0.8V
CES; VGE
= 0 V; TVJ = 25°C 0.4 mA
TVJ = 125°C 0.8 mA
I
GES
VCE = 0 V; VGE = ± 20 V 500 nA
t
d(on)
200 ns
t
r
60 ns
t
d(off)
300 ns
t
f
40 ns
C
ies
VCE = 25 V; VGE = 0 V; f = 1 MHz 3300 pF
Q
Gon
V
CE
= 600V; VGE = 15 V; IC = 20 A 130 nC
V
F
(reverse conduction); IF = 20A 2.5 V
R
thJC
0.5 K/W
Inductive load, T
VJ
= 125°C
VCE = 960 V; IC = 25 A
VGE =
15/0
V; RG = 22 W
Advanced Technical Information
High Voltage
BIMOSFET
TM
in High V oltage
ISOPLUS i4-PAC
TM
Monolithic Bipolar MOS T ransistor
IXBF 40N140
IXBF 40N160
1
5
I
C25
= 28 A
V
CES
= 1400/1600 V
V
CE(sat)
= 6.2 V
t
f
= 40 ns
© 2000 IXYS All rights reserved
2 - 4
IXBF 40N140
IXBF 40N160
Component
Symbol Conditions Maximum Ratings
T
VJ
-55...+150 °C
T
stg
-55...+125 °C
V
ISOL
I
ISOL
£ 1 mA; 50/60 Hz 2500 V~
F
C
mounting force with clip 20...120 N
Symbol Conditions Characteristic Values
min. typ. max.
dS,d
A
C pin - E pin 7 mm
dS,d
A
pin - backside metal 5.5 m m
R
thCH
with heatsink compound 0.15 K/W
Weight 9g
Dimensions in mm (1 mm = 0.0394")
© 2000 IXYS All rights reserved
3 - 4
IXBF 40N140
IXBF 40N160
VCE - Volts
0 400 800 1200 1600
I
CM
- Amperes
0.1
1
10
100
VF - Volts
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
I
F
- Amperes
0
10
20
30
40
50
60
70
VCE - Volts
024681012141618
I
C
- Amperes
0
10
20
30
40
50
60
70
QG - nanocoulombs
0 20406080100120140
V
GE
- Volts
0
2
4
6
8
10
12
14
16
VCE - Volts
0 2 4 6 8 10 12 14 16 18
I
C
- Amperes
0
10
20
30
40
50
60
70
13V
TJ = 25°C
VGE = 17V
T
J
= 125°C
VCE = 600V
I
C
= 20A
T
J
= 125°C
V
CEK
< V
CES
15V
VGE - Volts
5678910111213
I
C
- Amperes
0
10
20
30
40
50
60
70
13V
VGE = 17V
15V
VCE = 20V
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
IXBF 40N140
IXBF 40N160
Fig. 1 Typ. Output Characteristics Fig. 2 Typ. Output Characteristics
Fig. 3 Typ. Transfer Characteristics Fig. 4 Typ. Characteristics of Reverse
Conduction
Fig. 5 Typ. Gate Charge characteristics Fig. 6 Reverse Based Safe Operating Area
RBSOA
© 2000 IXYS All rights reserved
4 - 4
IXBF 40N140
IXBF 40N160
IC - Amperes
0 10203040
t
fi
- nanoseconds
0
10
20
30
40
50
Pulse Width - Seconds
0.00001 0.0001 0.001 0.01 0.1 1
Z
thJC
- K/W
0.0001
0.001
0.01
0.1
1
RG - Ohms
0 10203040
t
d(off)
- nanoseconds
0
100
200
300
400
Single Pulse
IXBF40
VCE = 960V
V
GE
= 15V
R
G
= 22
W
TJ = 125°C
V
CE
= 960V
V
GE
= 15V
I
C
= 20A
T
J
= 125°C
Fig. 7 Typ. Fall Time Fig. 8 Typ. Turn Off Delay Time
Fig. 9 Typ. Transient Thermal Impedance
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