Page 1
HI-SINCERITY
MICROELECTRONICS CORP.
HSK2474J
N - Channel MOSFETs
Description
Dynamic dv/dt Rating
•
Repetitive Avalanche rated
•
Surface Mount
•
Straigh Lead
•
Available in Tape&Reel
•
Fast Switching
•
Ease of Paralleling
•
Features
Spec. No. : Preliminary Data
Issued Date : 1999.11.01
Revised Date : 200011.01
Page No. : 1/5
Low Drain-Source ON Resistance - R
•
High Forward Transfer Admittance -|Yfs|=1.2S@VDS=50V, ID=1.3A
•
Low Leakage Current - I
•
Enhancement-Mode - Vth = 2.0~4.0V@VDS=4V, ID=250uA
•
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature.................................................................................................... +150 °C
Maximum Power Dissipation
•
Total Power Dissipation (Tc=25°C) .................................................................................... 25 W
Maximum Voltages and Currents
•
Drain to Source Breakdown Voltage................................................................................. 250 V
Drain to Gate Breakdown Voltage..................................................................................... 250 V
Gate to Source V oltag e.................................................................................................... ± 20 V
Drain Current (Cont.)......................................................................................................... 2.2 A
Drain Current (Pluse.)........................................................................................................ 8.8 A
=100uA (Max.)@VDS=200V
DSS
(Ta=25°C)
=1.2Ω(Typ.)@ VDS=10V, ID=1.3A
DS(ON)
Thermal Characteristics
Characteristic Symbol Max. Units
Junction to Case
Junction to Ambient
R
R
θJC
θJA
5
50
HSMC Product Specification
C/W
°
C/W
°
Page 2
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 1999.11.01
Revised Date : 200011.01
Page No. : 2/5
Electrical Characteristics
(Ta=25°C)
Characteristics Symbol Min. Typ. Max. Unit
Drain-Source Breakdown Voltage V
Gate Threshold Voltage V
Drain Cut-Off Current I
Gate Leakage Current I
(BR)DSS
GS(th)
DSS
GSS
250 - - V
2.0 - 4.0 V
- - 25 uA
-Forward Transconductance gfs 0.80 1.2 Drain-Source ON Resistance R
DS(ON)
Input Capacitance C
Reverse Transfer Capacitance C
Output Capacitance C
Switching Time
T
Total Gate Charge
(Gate-Source Plus Gate-Drain)
Gate-Source Charge Q
Gate-Drain Charge (Miller) Q
t
Q
iss
rss
oss
t
r
on
t
f
off
gs
gd
g
-1.22.0
- 280 - pF
-30-pF
-42-pF
-45-
-30-
-45-
- 135 -
--8.2nC
--1.8nC
--4.5nC
100
±
Test Conditions
ID=250uA
VDS=4V, ID=250uA
VDS=200V
uA
VGS=±20V
VDS=50V,ID=1.3A
VGS=10V, ID=1.3A
Ω
VDS=10V, VGS=0V
f=1.0MHz
VDD=100V, ID=1.0A
nS
RG=24Ω, RD=45
ID=2.7A, VDS=200V
VGS=10V
Ω
HSMC Product Specification
Page 3
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : Preliminary Data
Issued Date : 1999.11.01
Revised Date : 200011.01
Page No. : 3/5
7
6
5
4
3
2
ID, Drain-Source Current (A)
1
0
012345678910
On-Region C haracteri stic
VGS=10V
VGS=8V
VGS=6V
VGS=4V
VGS=2V
VDS,Drain-Source Voltage (V)
On Resistance Variation with Temperature
2.5
VGS=10V
2.3
2.1
1.9
1.7
(ohm)
1.5
1.3
RDS(on), Drain-Source On-Resistance
1.1
0.9
25 35 45 55 65 75 85 95 105 115 125
Tc, Case Temperature (°C)
ID=1.3A
Brea kdow n Voltage Vari ati on with Temperature
1.15
1.13
1.11
1.09
1.07
1.05
1.03
Breakdown Voltage
1.01
0.99
BVDSS, Normalized Drain-Source
0.97
0.95
20 40 60 80 100
Tc, Case Temperature (°C)
Typical On-Resistance & Dr ain-Current
2.0
1.8
1.6
1.4
1.2
1.0
(ohm)
0.8
0.6
0.4
RDS(on), Drain-Source On-Resistance
0.2
0.0
012345678910
ID, Drain-Source Current (A)
VGS=6V
VGS=10V
Transconductance Variation with Drain Current
& Temperature
5
VDS=10V
4
3
2
GFS,Transconductance (S)
1
0
012345678
ID, Drain-Source Current (A)
Tc=25°C
Tc=100°C
Drain Current Variation with Gate Voltage &
Temperature
5
VDS=10V
4
3
2
ID, Drain-source Current (A)
1
0
012345678
VGS, Gate-Source Votltage(V)
TC=100°C
Tc=25°C
HSMC Product Specification
Page 4
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 1999.11.01
Revised Date : 200011.01
Page No. : 4/5
2.5
VGS=10V
2.0
Tc=100°C
1.5
1.0
Resistance (ohm)
0.5
RDS(on),Normalized Drain-Source On
0.0
012345678910
ID, Drain-Source Current (A)
Tc=25°C
Capacitance Characteristices
1000
100
RDSON(Temp)
Ciss
Coss
Body Di ode Forward Voltage Varia tion with
Curren t & Temperature
10
9
8
7
6
5
4
3
IS, Reverse Drain Current (A)
2
1
0
0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VSD, Body Diode Forward Voltage (V)
Tc=100°C
Tc=25°C
Capacitance (pF)
10
1
0.1 1 10 100
VDS, Drain-Source Voltage (V)
Crss
HSMC Product Specification
Page 5
HI-SINCERITY
MICROELECTRONICS CORP.
TO-252 Dimension
Spec. No. : Preliminary Data
Issued Date : 1999.11.01
Revised Date : 200011.01
Page No. : 5/5
A
B
L
F
G
C
D
Marking :
HSMC Logo
Part Number
Date Code
Product Series
Rank
Ink Mark
Style : Pin 1.Gate 2.Drain 3.Source
3
H
E
K
2
I
1
J
3-Lead TO-252 Plastic Surface Mount Package
HSMC Package Code : J
DIM
Inches Millimeters Inches M illimeters
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.0177 0.0217 0.45 0.55 G 0.0866 0.1102 2.20 2.80
B 0.0650 0.0768 1.65 1.95 H - *0.0906 - *2.30
C 0.0354 0.0591 0.90 1.50 I - 0.0354 - 0.90
D 0.0177 0.0236 0.45 0.60 J - 0.0315 - 0.80
E 0.2520 0.2677 6.40 6.80 K 0.2047 0.2165 5.20 5.50
F 0.2125 0.2283 5.40 5.80 L 0.0551 0.0630 1.40 1.60
Notes :
Material :
• Lead : 42 Alloy ; solder plating
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
1.Dimension and tolerance based on our Spec. dated May. 05,1996.
2.Controlling dimension : millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, pleas e contact your l ocal HSMC sales office.
*:Typical
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringem ent of pat ents, or applic ati on assistance.
Head Office And Factory :
•
Head Office
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
•
Factory 1 :
Tel : 886-3-5983621~5 Fax : 886-3-5982931
•
Factory 2 :
Tel : 886-3-5977061 Fax : 886-3-5979220
(Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
HSMC Product Specification
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