Page 1
HSM126S
Silicon Schottky Barrier Diode for System Protection
ADE-208-111C (Z)
May 1995
Features
• HSM126S which is connected in series configuration enable to protect electric systems from miss-
operation against external + and – surge.
• Low VF and low leakage current.
• MPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. Laser Mark Package Code
HSM126S S14 MPAK
Rev. 3
Pin Arrangement
3
2
(Top View)
1
1 Cathode 2
2 Anode 1
3 Cathode 1
Anode 2
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HSM126S
Absolute Maximum Ratings (Ta = 25°C)*
3
Item Symbol Value Unit
Repetitive peak reverse voltage V
Average forward current IO*
Non-Repetitive peak forward surge current I
FSM
RRM
1
2
*
20 V
200 mA
2A
Junction temperature Tj 125 °C
Storage temperature Tstg –55 to +125 °C
Notes: 1. Sine wave, Two device total
2. 50Hz half sine wave 1 pulse
3. Per one device
Electrical Characteristics (Ta = 25°C)*
Item Symbol Min Typ Max Unit Test Condition
Reverse current I
Forward voltage V
R
F
Capacitance C — 40 — pF VR = 0V, f = 1MHz
Note: Per one device
— — 2.0 µAVR = 5V
— — 0.35 V IF = 10mA
10
Pulse test
1.0
F
–1
10
Ta = 75°C
–2
10
Ta = 25°C
–3
Forward current I (A)
10
–4
10
–5
10
0 0.2 0.4
Forward voltage V (V)
0.6 0.8
F
Fig.1 Forward current Vs. Forward voltage
1.0
2
Page 3
–2
10
–3
10
R
–4
10
Pulse test
Ta = 75°C
–5
10
Reverse current I (A)
Ta = 25°C
–6
10
–7
10
0
510
Reverse voltage V (V)
15 20 25
R
Fig.2 Reverse current Vs. Reverse voltage
HSM126S
30
f = 1MHz
Pulse test
2
10
10
Capacitance C (pF)
1.0
10
–1
Reverse voltage V (V)
1.0
R
Fig.3 Capacitance Vs. Reverse voltage
10
3
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HSM126S
Example of application circuite
SBD (EX. HSM126S)
Vcc
D1
Vcc
GND
Input
– Surge
+ Surge
R
D2
0.35V
Vin
0.35V
GND
IC / LSI
Built-in diode
•
V 0.7V
F=•
4
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Package Dimensions
Laser Mark
+ 0.10
0.4
– 0.05
3
+ 0.1
0.65
– 0.3
0.16
+ 0.10
– 0.06
HSM126S
Unit: mm
S14
21
0.95
0.95
1.9
+ 0.3
2.8
– 0.1
+ 0.1
0.65
0.3
1.5
– 0.3
+ 0.2
2.8
+ 0.2
1.1
– 0.6
– 0.1
0 – 0.10
HITACHI Code
JEDEC Code
EIAJ Code
Weight (g)
1
Cathode 2
2
Anode 1
3
Cathode 1
Anode 2
MPAK(1)
—
SC-59A
0.011
5
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Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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