Datasheet HSK1118 Datasheet (HSMC)

HI-SINCERITY

MICROELECTRONICS CORP.

HSK1118

Description

Field Effect Transistor.

•

Silicon N Channel MOS Type.

•

High Speed, High Current DC-DC Co nverter, Relay Drive and

•

Motor Drive Applications

Features

4-Volt Gate Drive

•

Low Drain-Source On Resistanc - R

•

High Forward Transfer Admittance - | Yfs |=4.0S (Typ.)

•

Low Leakage Current - I

•

Enhancement-Mode - Vth = 1.5~3.5V @VDS = 10V, ID = 1mA

•

= 300uA (Max.) @VDS = 600V

DSS

=0.95Ω (Typ.)

DS(on)

Spec. No. : Preliminary Data
Issued Date : 1998.02.01
Revised Date : 1999.08.01
Page No. : 1/5

Absolute Maximum Ratings

Maximum Temperatures

•

Storage Temperature............................................................................................ -55 ~ +150 °C

Junction Temperature...................................................................................................... 150 °C

Maximum Power Dissipation

•

Total Power Dissipation (Tc=25°C) .................................................................................... 45 W

Maximum Voltages and Currents (Tc=25°C)

•

DRAIN to SOURCE Breakdown Voltage .......................................................................... 600 V

DRAIN to GATE Breakdown Vo ltage ................................................................................ 600 V

GATE to SOURCE Voltage............................................................................................... ±30 V

DRAIN Current (Cont.).......................................................................................................... 6 A

DRAIN Current (Pluse)....................................................................................................... 24 A

(Ta=25°C)

Thermal Characteristics

Characteristic Symbol Max. Units
Junction to Case
Junction to Ambient

Note : This transistor is an electrostatic sensitive device. Please handle with care.

RθJC
RθJA

2.77

62.5

C/W

°

C/W

°

HSMC Product Specification

HI-SINCERITY

V

V

V4V

V

V

MICROELECTRONICS CORP.

Spec. No. : Preliminary Data
Issued Date : 1998.02.01
Revised Date : 1999.08.01
Page No. : 2/5

Characteristics

(Ta=25°C)

Characteristics Symbol Min. Typ. Max. Unit Test Conditions
Drain-Source Breakdown Voltage V
Gate Threshold Voltage V
Drain Cut-Off Current I
Gate Leakage Current I
Drain-Source On Voltage V
On-State Drain Current I
Drain-Source ON Resistance R

(BR)DSS

GS(th)

DSS

GSS

DS(ON)

D(ON)

DS(ON)

600 - - V ID=250uA

2-4VVDS=10V, ID=1mA

- - 25 uA VDS=600V

--

±

100

--6VI

9--AVDS=10V, VGS=10V

- 0.95 1.25
Input Capacitance Ciss - 2000 - pF
Reverse Transfer Capacitance Crss - 500 - pF
Output Capacitance Coss - 740 - pF

T

r

T

on

-50-

-80­Switching Time

T

Total Gate Charge
(Gate-Source Plus Gate-Drain)

Gate-Source Charge Q
Gate-Drain Charge (Miller) Q

Q

T

f

off

g

gs

gd

-40-

- 170 -

-60-nC

-30-nC

-30-nC

nA

Ω

nS

VGS=±25V

=5.0A, VG=10V

D

VGS=10V, ID=3A

VDS=10V ,VGS=0V
f =1MHz

VIN : Tr, Tf<5nS
VDD=300V, ID=3A
VGS=10V
Duty≤1%, tw=10uS

I

=6A

D

VDS=400V
VGS=10V

Characteristics Curve

5

4

3

2

Drain-Source Current (A)

D

I

1

0

0246810

On-Region Characteristic

VGS=10V

VDS , Drain-Source Voltage (V)

6V

5.5V

10

10V

5

4.5

Drain-Source Current (A)

D

I

4V

VGS=6V

8

6

4

2

0

0 20 40 60 80 100

On-Region Characteristic

5.5

5

4.5

VDS ,Drain - Source Voltage (V)

HSMC Product Specification

HI-SINCERITY

V

V

MICROELECTRONICS CORP.

Spec. No. : Preliminary Data
Issued Date : 1998.02.01
Revised Date : 1999.08.01
Page No. : 3/5

Drain Current Variation & Gate Voltage &

Temperature

6

VDS=10

5

4

3

2

Drain-Source Current (A)

D

I

1

0

012345678

VGS, Gat e - Source Volt ag e ( V)

On Resistance Variation & Temperature

4.0
VGS=10V

3.5

3.0

2.5

2.0

Resistance

1.5

1.0

Tc=100°C

Tc=25°C

ID=3A

ID=6A

ID=1A

Transconductance V ariation & Drain

Current & Temperature

10

DS

=10

V

9
8
7
6
5
4
3

gFS,Transconductance (S)

2
1
0

02468

Tc=100°C

ID, Dr a in Curre nt (A)

10000

1000

100

Capacitance Characteristics

Ciss

Crss

Capac itanc e (pF)

10

Tc=25°C

Coss

0.5

RDS(ON) Normalized Drain-Source On-

0.0

20 40 60 80 100 120 140

Tc, Case Temperature ( °C)

2.4

2.0

1.6

1.2

0.8

0.4

Typical On-Resistance & Drain Current

VGS=10V

Tc=100°C

Tc=25°C

RDS(ON) Drain-Source On-Resistance

0.0
0246810

ID, Dr a in Curre nt (A)

1

1 10 100

VDS, Drain-Source Vol t a ge ( V)

Typical On-Resistance & Drain Current

2.4

2.0

1.6

1.2
VGS=10V

0.8

0.4

RDS(ON) Drain-Source On-Resistance

0.0

0246810

VGS=15V

ID, Dr a in Curre nt (A)

HSMC Product Specification

HI-SINCERITY

V

MICROELECTRONICS CORP.

Spec. No. : Preliminary Data
Issued Date : 1998.02.01
Revised Date : 1999.08.01
Page No. : 4/5

Breakdown Voltage Variation & Temperature

1.20

1.15

1.10

1.05

Breakdow n Voltage

1.00

BVDSS, Normal ized Drain-Source

0.95
25 50 75 100 125

Tc, Case Temperature ( °C)

100.00

10.00

1.00

,Drain-Source Current (A)

0.10

D

I

Maximum Safe Operating Area (TO-220 FP)

VGS=10V

Si ngle Pulse

Tc=25°C

DS(on)

R

Line

100us

1ms
10ms

100ms

Dc

Body Diode Forward Voltage Variation &

10

8

6

4

,Reverse Drain Cur rent ( A)

S

I

2

0

0 0.2 0.4 0.6 0.8 1 1.2 1.4

16

ID=6A

14

Tc=25°C

12

(V)

GS

10

8

6

4

Gate -Source Voltage V

2

Current & Temperature

Tc=100°C

Tc=25°C

VSD, Body Diode For w ar d Voltage (V)

Dynam ic Input /Output Characte ris tics

VDD=240V

VDD=120

VDD=400V

0.01

0.1 1 10 100 1000 10000

VDS ,Drain - Source Voltage (V)

1.00

0.5

0.2

0.10

Resistance

r(t) Normalized Effective Transient Thermal

0.01

0.1

0.05

0.02

0.01

Single Pulse

0.1 1 10 100 1000

Transient Thermal Response Curve(TO-220FP)

t 1 ,Time(ms)

0

0 10203040506070

Total Gate Charge Qg (nC)

RθJC(t) = r(t) * RθJC(t)
RθJC =2.46 °C / W

P(pk)

t1

t2

TJ-TC=P*RθJC(t)
Duty Cycle, D=t1/t2

HSMC Product Specification

HI-SINCERITY

MICROELECTRONICS CORP.

TO-220AB Dimension

A B

D

H

I

G

Spec. No. : Preliminary Data
Issued Date : 1998.02.01
Revised Date : 1999.08.01
Page No. : 5/5

Marking :

E

M

C

K

HSMC Logo

Part Number

Date Code

Style : Pin 1.Gate 2.Drain 3.Source

Product Series

Rank

3
2

N

4

1

P

3-Lead TO-220AB Plastic Package

HSMC Package Code : E

DIM

Inches Millimeters Inches M illimeters

Min. Max. Min. Max.

A 0.2197 0.2949 5.58 7.49 I -

O

DIM

Min. Max. Min. Max.

*

0.1508 ­B 0.3299 0.3504 8.38 8.90 K 0.0295 0.0374 0.75 0.95
C 0.1732 0.185 4.40 4.70 M 0.0449 0.0551 1.14 1.40
D 0.0453 0.0547 1.15 1.39 N -

*

0.1000 ­E 0.0138 0.0236 0.35 0.60 O 0.5000 0.5618 12.70 14.27
G 0.3803 0.4047 9.66 10.28 P 0.5701 0.6248 14.48 15.87
H-*0.6398 -

Notes :

Material :

• Lead : 42 Alloy ; solder plating

• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0

1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.

2.Controlling dimension : millimeters.

3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.

4.If there is any question with packing specification or packing method, pleas e contact your l ocal HSMC sal es office.

*

16.25

*:Typical

*

3.83

*

2.54

Important Notice:

• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.

• HSMC reserves the right to make changes to its products without notice.

•

HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

• HSMC assumes no liability for any consequence of customer product design, infringem ent of pat ents, or applic ati on assistance.

Head Office And Factory :

•

Head Office

Tel : [phone] Fax : [phone]

•

Factory 1 :

Tel : [phone]~5 Fax : [phone]

•

Factory 2 :

Tel : [phone] Fax : [phone]

(Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.

No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C

No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C

HSMC Product Specification