Page 1
v04.0607
HMC414MS8G / 414MS8GE
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 2.2 - 2.8 GHz
6
Typical Applications
This ampli er is ideal for use as a power
ampli er for 2.2 - 2.7 GHz applications:
• BLUETOOTH
• MMDS
Functional Diagram
Features
Gain: 20 dB
Saturated Power: +30 dBm
32% PAE
Supply Voltage: +2.75V to +5V
Power Down Capability
Low External Part Count
General Description
The HMC414MS8G & HMC414MS8GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power ampli ers which operate
between 2.2 and 2.8 GHz. The ampli er is packaged
in a low cost, surface mount 8 leaded package with
an exposed base for improved RF and thermal performance. With a minimum of external components,
the ampli er provides 20 dB of gain, +30 dBm of saturated power at 32% PAE from a +5V supply voltage.
The ampli er can also operate with a 3.6V supply. Vpd
can be used for full power down or RF output power/
current control.
6 - 62
LINEAR & POWER AMPLIFIERS - SMT
Electrical Speci cations, T
Parameter
Frequency Range 2.2 - 2.8 2.2 - 2.8 GHz
Ga in 17 20 25 17 20 25 dB
Gain Variation Over Temperature 0.03 0.04 0.03 0.04 dB/ °C
Input Return Loss 8 8 dB
Output Return Loss 9 9 dB
Output Power for 1 dB Compression (P1dB) 21 25 23 27 dBm
Saturated Output Power (Psat) 27 30 dBm
Output Third Order Intercept (IP3) 30 35 35 39 dBm
Noise Figure 6.5 7.0 dB
Supply Current (Icq) Vpd = 0V / 3.6V 0.002 / 240 0.002 / 30 0 mA
Control Current (Ipd) Vpd = 3.6V 7 7 mA
Switching Speed tON, tOFF 45 45 ns
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
= +25° C, As a Function of Vs, Vpd = 3.6V
A
Vs = 3.6V Vs = 5V
Min. Typ. Max. Min. Typ. Max. Units
Order On-line at www.hittite.com
Page 2
HMC414MS8G / 414MS8GE
v04.0607
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 2.2 - 2.8 GHz
Gain vs. Temperature, Vs= 3.6V Gain vs. Temperature, Vs= 5V
30
30
25
20
15
GAIN (dB)
10
5
0
2 2.2 2.4 2.6 2.8 3
FREQUENCY (GHz)
+25 C
+85 C
-40 C
25
20
15
GAIN (dB)
10
5
0
2 2.2 2.4 2.6 2.8 3
FREQUENCY (GHz)
Return Loss, Vs= 3.6V Return Loss, Vs= 5V
0
-4
-8
-12
RETURN LOSS (dB)
-16
S11
S22
0
-4
-8
-12
RETURN LOSS (dB)
-16
S11
S22
+25 C
+85 C
-40 C
6
-20
2 2.2 2.4 2.6 2.8 3
FREQUENCY (GHz)
-20
2 2.2 2.4 2.6 2.8 3
FREQUENCY (GHz)
P1dB vs. Temperature, Vs= 3.6V P1dB vs. Temperature, Vs= 5V
32
28
24
20
16
P1dB (dBm)
12
8
4
0
2 2.2 2.4 2.6 2.8 3
FREQUENCY (GHz)
+25 C
+85 C
-40 C
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
32
28
24
20
16
P1dB (dBm)
12
8
4
0
2 2.2 2.4 2.6 2.8 3
FREQUENCY (GHz)
+25 C
+85 C
-40 C
LINEAR & POWER AMPLIFIERS - SMT
6 - 63
Page 3
6
HMC414MS8G / 414MS8GE
v04.0607
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 2.2 - 2.8 GHz
Psat vs. Temperature, Vs= 3.6V Psat vs. Temperature, Vs= 5V
32
28
24
20
16
Psat (dBm)
12
8
4
0
2 2.2 2.4 2.6 2.8 3
FREQUENCY (GHz)
+25 C
+85 C
-40 C
Power Compression@ 2.4 GHz, Vs= 3.6V Power Compression@ 2.4 GHz, Vs= 5V
36
30
24
Pout
Gain
PAE
32
28
24
20
16
Psat (dBm)
12
8
4
0
2 2.2 2.4 2.6 2.8 3
FREQUENCY (GHz)
36
30
24
Pout
Gain
PAE
+25 C
+85 C
-40 C
LINEAR & POWER AMPLIFIERS - SMT
18
12
6
Pout (dBm), GAIN (dB), PAE (%)
0
-14 -9 -4 1 6 11 16
INPUT POWER (dBm)
18
12
6
Pout (dBm), GAIN (dB), PAE (%)
0
-14 -9 -4 1 6 11 16
INPUT POWER (dBm)
Output IP3 vs. Temperature, Vs= 3.6V Output IP3 vs. Temperature, Vs= 5V
42
37
32
27
IP3 (dBm)
22
17
12
2 2.2 2.4 2.6 2.8 3
FREQUENCY (GHz)
+25 C
+85 C
-40 C
42
37
32
27
IP3 (dBm)
22
17
12
2 2.2 2.4 2.6 2.8 3
FREQUENCY (GHz)
+25 C
+85 C
-40 C
6 - 64
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Page 4
Reverse Isolation
vs. Temperature, Vs= 3.6V
0
HMC414MS8G / 414MS8GE
v04.0607
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 2.2 - 2.8 GHz
Power Down Isolation, Vs= 3.6V
0
-10
-20
ISOLATION (dB)
-30
-40
2 2.2 2.4 2.6 2.8 3
FREQUENCY (GHz)
+25 C
+85 C
-40 C
-10
-20
-30
-40
ISOLATION (dB)
-50
-60
2 2.2 2.4 2.6 2.8 3
FREQUENCY (GHz)
Noise Figure vs. Temperature, Vs= 3.6V Noise Figure vs. Temperature, Vs= 5V
15
12
9
6
NOISE FIGURE (dB)
3
+25 C
+85 C
-40 C
15
12
9
6
NOISE FIGURE (dB)
3
+25 C
+85 C
-40 C
6
0
2 2.2 2.4 2.6 2.8 3
FREQUENCY (GHz)
Gain & Power vs. Supply Voltage
28
P1dB
26
24
22
GAIN dB)
20
18
2.75 3.25 3.75 4.25 4.75 5.25
Psat
Gain
Vcc SUPPLY VOLTAGE (Vdc)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
0
2 2.2 2.4 2.6 2.8 3
Gain, Power & Quiescent
Supply Current vs Vpd@ 2.4 GHz
34
30
P1dB, Psat (dBm)
26
22
18
14
Order On-line at www.hittite.com
32
28
24
20
16
GAIN (dB), P1dB (dBm), Psat (dBm)
12
2 2.4 2.8 3.2 3.6
Psat
FREQUENCY (GHz)
P1dB
Gain
Vpd (Vdc)
400
320
240
Icq (mA)
Icq
160
80
0
LINEAR & POWER AMPLIFIERS - SMT
6 - 65
Page 5
6
v04.0607
Absolute Maximum Ratings
Collec tor Bias Voltage (Vcc) +5.5 Vdc
Control Voltage (Vpd1, Vpd2) +4.0 Vdc
RF Input Power (RFIN)(Vs = +5.0,
Vpd = +3.6 Vdc)
Junction Temperature 150 °C
Continuous Pdiss (T = 85 °C)
(derate 27 mW/°C above 85 °C)
Thermal Resistance
(junction to ground paddle)
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
+17 dBm
1.755 W
37 °C/W
Outline Drawing
HMC414MS8G / 414MS8GE
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 2.2 - 2.8 GHz
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
6 - 66
LINEAR & POWER AMPLIFIERS - SMT
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS].
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
Package Information
Part Number Package Body Material Lead Finish MSL Rating Package Marking
HMC414MS8G Low Stress Injection Molded Plastic Sn/Pb Solder
HMC414MS8GE RoHS -compliant Low Stress Injection Molded Plastic 100% matte Sn
[1] Max peak re ow temperature of 235 °C
[2] Max peak re ow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
MSL1
MSL1
[1]
[2]
[3]
H414
XXXX
H414
XXXX
Page 6
HMC414MS8G / 414MS8GE
v04.0607
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 2.2 - 2.8 GHz
Pin Descriptions
Pin Number Function Description Interface Schematic
1 RFIN This pin is AC coupled and matched to 50 Ohms from 2.2 to 2.8 GHz.
2NC Not Connected.
3, 4 RFOUT RF output and DC bias for the output stage.
5GND
6, 8 Vpd1, Vpd2
7Vcc
Ground: Backside of package has exposed metal ground slug that must be
connected to ground thru a short path. Vias under the device are required.
Power control pin. For maximum power, this pin should be connected to
3.6V. For 5V operation, a dropping resistor is required. A higher voltage is
not recommended. For lower idle current, this voltage can be reduced.
Power supply voltage for the rst ampli er stage. An ex ternal bypass
capacitor of 330 pF is required as shown in the application schematic.
6
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
6 - 67
Page 7
6
HMC414MS8G / 414MS8GE
v04.0607
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 2.2 - 2.8 GHz
Evaluation PCB
LINEAR & POWER AMPLIFIERS - SMT
List of Materials for Evaluation PCB 105006
Item Description
J1 - J2 PCB Mount SMA RF Connector
J3 2 mm DC Header
C1 2.7 pF Capacitor, 0603 Pkg.
C2 100 pF Capacitor, 0402 Pkg.
C3 - C6 330 pF Capacitor, 0603 Pkg.
C7 2.2 μF Capacitor, Tantalum
L1 18nH Inductor 0603 Pkg.
U1
[2]
PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
HMC414MS8G / HMC414MS8GE
Ampli er
105074 Eval Board
* For 5V operation on Vctl line,
select R1, R2 such that 3.6V is
presented on Pins 6 and 8.
[1]
The circuit board used in the nal application should
use RF circuit design techniques. Signal lines
should have 50 ohm impedance while the package
ground leads and exposed paddle should be connected directly to the ground plane similar to that
shown. A sufficient number of via holes should be
used to connect the top and bottom ground planes.
The evaluation board should be mounted to an
appropriate heat sink. The evaluation circuit board
shown is available from Hittite upon request.
6 - 68
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Page 8
Application Circuit
HMC414MS8G / 414MS8GE
v04.0607
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 2.2 - 2.8 GHz
6
Impedance 50 Ohm 50 Ohm 50 Ohm
Length 0.036” 0.3” 0.11”
* For 5V operation on Vctl line, select R1, R2 such that 3.6V is presented on Pins 6 and 8.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
TL1 TL2 TL3
LINEAR & POWER AMPLIFIERS - SMT
6 - 69
Page 9
Loading...