Datasheet FS7VS-16A Datasheet (POWEREX)

MITSUBISHI Nch POWER MOSFET

FS7VS-16A

HIGH-SPEED SWITCHING USE

FS7VS-16A

¡VDSS ............................................................................... 800V

¡r

DS (ON) (MAX) ............................................................. 1.64Ω

¡I

D ........................................................................................... 7A

OUTLINE DRAWING Dimensions in mm

r

+0.3

–0.5

3.0

q

10.5MAX.

1

qwe

5

wr

e

0.8

1.5MAX.

9.8 ± 0.5

8.6 ± 0.3

1.5MAX.

4.5

2.6 ± 0.4

q GATE
w DRAIN
e SOURCE
r DRAIN

4.5

0.5

1.3

+0.3

0

–0

TO-220S

(1.5)

APPLICATION

SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, per­sonal computer etc.

MAXIMUM RATINGS (Tc = 25°C)

Parameter ConditionsSymbol Ratings Unit
VDSS
VGSS
ID
IDM
PD
Tch
Tstg

Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight

—

VGS = 0V
VDS = 0V

Typical value

800
±30

7

21

150
–55 ~ +150
–55 ~ +150

1.2

V
V
A
A

W

°C
°C

g

Feb.1999

ELECTRICAL CHARACTERISTICS (Tch = 25°C)

Symbol UnitParameter Test conditions

V

(BR) DSS

V

(BR) GSS

IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)

Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance

ID = 1mA, VGS = 0V
IGS = ±100µA, VDS = 0V
VGS = ±25V , VDS = 0V
VDS = 800V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 3A, VGS = 10V
ID = 3A, VGS = 10V
ID = 3A, VDS = 10V

VDS = 25V, VGS = 0V, f = 1MHz

VDD = 200V, ID = 3A, VGS = 10V,
RGEN = RGS = 50Ω

IS = 3A, VGS = 0V
Channel to case

MITSUBISHI Nch POWER MOSFET

FS7VS-16A

HIGH-SPEED SWITCHING USE

Limits

Min. Typ. Max.

800
±30

—
—

2
—
—

4.2
—
—
—
—
—
—
—
—
—

—
—
—
—

3

1.26

3.78

7.0

1380

140

28
25
28

185

46

1.0
—

—
—

±10

1.64

4.92
—
—
—
—
—
—
—
—

1.5

0.83

V
V

µA

mA

1

V

4

Ω

V

S
pF
pF
pF

ns
ns
ns
ns

V

°C/W

PERFORMANCE CURVES

POWER DISSIPATION DERATING CURVE

200

160

120

80

40

POWER DISSIPATION PD (W)

0

0 20050 100 150

CASE TEMPERATURE T

OUTPUT CHARACTERISTICS

20

16

12

(TYPICAL)

VGS = 20V

C (°C)

10V

TC = 25°C
Pulse Test

5V

MAXIMUM SAFE OPERATING AREA

3
2

1

10

7
5

3
2

0

10

7
5

3
2

DRAIN CURRENT ID (A)

–1

10

7

TC = 25°C

5

Single Pulse

3

0

10

210

1

357 2 10

357 2 10

DRAIN-SOURCE VOLTAGE V

OUTPUT CHARACTERISTICS

(TYPICAL)

5

VGS = 20V

10V

4

3

2

357

DS (V)

TC = 25°C
Pulse Test

tw = 10ms

100ms

1ms

10ms
100ms

DC

3

4.5V

8

4

DRAIN CURRENT ID (A)

0

0 1020304050

PD = 150W

DRAIN-SOURCE VOLTAGE VDS (V)

4V

2

1

DRAIN CURRENT ID (A)

0

0 4 8 12 16 20

DRAIN-SOURCE VOLTAGE VDS (V)

4V

3.5V

Feb.1999

MITSUBISHI Nch POWER MOSFET

FS7VS-16A

HIGH-SPEED SWITCHING USE

ON-STATE VOLTAGE VS.

GATE-SOURCE VOLTAGE

(TYPICAL)

50

40

(V)

30

DS (ON)

20

VOLTAGE V

10

DRAIN-SOURCE ON-STATE

0

0 4 8 12 16 20

GATE-SOURCE VOLTAGE V

TRANSFER CHARACTERISTICS

(TYPICAL)

20

16

(A)

D

12

8

4

DRAIN CURRENT I

0

0 4 8 12 16 20

TC = 25°C
Pulse Test

ID = 14A

7A
3A

GS

(V)

TC = 25°C

DS

= 50V

V
Pulse Test

ON-STATE RESISTANCE VS.

DRAIN CURRENT

(TYPICAL)

5.0

TC = 25°C
Pulse Test

4.0

(Ω)

3.0

DS (ON)

2.0

1.0

RESISTANCE r

DRAIN-SOURCE ON-STATE

0

–1

10

210

0

357 2 10

DRAIN CURRENT I

FORWARD TRANSFER ADMITTANCE

VS.DRAIN CURRENT

(TYPICAL)

1

10

7
5

(S)

3



fs

2

0

10

7
5

3

ADMITTANCE y

FORWARD TRANSFER

2

–1

10

–1

10

23 57 10

VGS = 10V

357 2 10

0

10

20V

1

357

D

(A)

TC = 25°C

125°C

75°C

VDS = 10V
Pulse Test

23 57

2

1

GATE-SOURCE VOLTAGE V

DRAIN-SOURCE VOLTAGE

4

10

7
5

3
2

3

10

7
5

3
2

2

10

CAPACITANCE

7

Ciss, Coss, Crss (pF)

5

Tch = 25°C

3

f = 1MH

2

VGS = 0V

1

10

357 2 10

210

DRAIN-SOURCE VOLTAGE V

CAPACITANCE VS.

(TYPICAL)

Z

0

1

357 2 10

GS

Coss

357

DS

(V)

Ciss

Crss

(V)

D

DRAIN CURRENT I

(A)

SWITCHING CHARACTERISTICS

(TYPICAL)

3

10

7
5

3

Tch = 25°C

DD

= 200V

V

GS

= 10V

V

GEN

= RGS = 50Ω

R

2

t

2

10

7
5

3

SWITCHING TIME (ns)

2

1

2

2

10

–1

10

23 57 10

10

0

d(off)

t

f

t

r

t

d(on)

23 57

1

DRAIN CURRENT ID (A)

Feb.1999

MITSUBISHI Nch POWER MOSFET

FS7VS-16A

HIGH-SPEED SWITCHING USE

GATE-SOURCE VOLTAGE

VS.GATE CHARGE

(TYPICAL)

20

Tch = 25°C

D

= 7A

I

(V)

GS

16

VDS = 250V

12

8

400V
600V

4

GATE-SOURCE VOLTAGE V

0

0 20406080100

GATE CHARGE Q

g

(nC)

ON-STATE RESISTANCE VS.

CHANNEL TEMPERATURE

(t°C)

(25°C)

DS (ON)

DS (ON)

10

1

7
5

(TYPICAL)

VGS = 10V

D

= 1/2I

I
Pulse Test

3
2

0

10

7
5

3
2

–1

10

–50 0 50 100 150

DRAIN-SOURCE ON-STATE RESISTANCE r

DRAIN-SOURCE ON-STATE RESISTANCE r

CHANNEL TEMPERATURE Tch (°C)

SOURCE-DRAIN DIODE

FORWARD CHARACTERISTICS

(TYPICAL)

(A)

S

20

16

TC = 125°C

VGS = 0V
Pulse Test

12

75°C

8

4

SOURCE CURRENT I

0

0 0.8 1.6 2.4 3.2 4.0

SOURCE-DRAIN VOLTAGE V

25°C

SD

(V)

THRESHOLD VOLTAGE VS.

CHANNEL TEMPERATURE

(TYPICAL)

5.0

D

VDS = 10V

D

= 1mA

I

4.0

(V)

3.0

GS (th)

2.0

VOLTAGE V

1.0

GATE-SOURCE THRESHOLD

0

–50 0 50 100 150

CHANNEL TEMPERATURE Tch (°C)

BREAKDOWN VOLTAGE VS.

(t°C)

(25°C)

(BR) DSS

(BR) DSS

1.4

CHANNEL TEMPERATURE

(TYPICAL)

VGS = 0V

D

I

= 1mA

1.2

1.0

0.8

0.6

0.4
–50 0 50 100 150

DRAIN-SOURCE BREAKDOWN VOLTAGE V

CHANNEL TEMPERATURE Tch (°C)

DRAIN-SOURCE BREAKDOWN VOLTAGE V

TRANSIENT THERMAL IMPEDANCE

(°C/W)

1

10

7

(ch–c)

5

th

3
2

D = 1.0

0

10

7

0.5

5
3

0.2

2

0.1

–1

10

7

10

5
3

2

–2

–4

10

0.05

0.02

0.01
Single Pulse

23 57 23 57 23 57 23 57

10

TRANSIENT THERMAL IMPEDANCE Z

CHARACTERISTICS

–3

10

–2

PULSE WIDTH t

10

–1

10023 57

w

(s)

P

DM

tw

D

=

T

tw

T

10123 57

2

10

Feb.1999