Page 1
FSB660/FSB660A
FSB660 / FSB660A
C
E
B
SuperSOTTM-3 (SOT-23)
PNP Low Saturation Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 2A
continuous.
Absolute Maximum Ratings* T
ParameterSymbol
V
CEO
V
CBO
V
EBO
I
C
T
J, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
A = 25°C unless otherwise noted
FSB660/FSB660A
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics T
Symbol
P
D
R
θJA
A = 25°C unless otherwise noted
Max
Characteristic
FSB660/FSB660A
Units
V60Collector-Emitter Voltage
V60Collector-Base Voltage
V5Emitter-Base Voltage
A2Collector Current - Continuous
°C-55 to +150Operating and Storage Junction Temperature Range
Units
mW500Total Device Dissipation
°C/W250Thermal Resistance, Junction to Ambient
2001 Fairchild Semiconductor Corporation FSB660/FSB660A Rev. B1
Page 2
ON
CHARACTERISTICS
*
PNP Low Saturation Transistor
FSB660/FSB660A
(continued)
Electrical Characteristics T
OFF CHARACTERISTICS
BV
BV
BV
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
V
BE(on)
CEO
CBO
EBO
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
A = 25°C unless otherwise noted
I
= 10 mA
C
I
= 100 µA
C
I
= 100 µA
E
V
= 30 V
CB
V
= 30 V, TA=100°C
CB
V
= 4V
EB
= 100 mA, VCE = 2 V
I
C
I
=500mA, VCE =2V FSB660
C
FSB660A
I
= 1 A, VCE = 2 V
C
I
= 2 A, VCE = 2 V
C
= 1 A, IB = 100 mA
I
C
I
= 2 A, IB=200 mA FSB660
C
FSB660A
I
= 1 A, IB = 100 mA
C
= 1 A, VCE = 2 V
I
C
70
100
250
80
40
100
10
100
300
550
350
300
UnitsMaxMinTest ConditionsParameterSymbol
V60
V60
V5
nA
uA
nA
-
mV300
V1.25
V1
SMALL SIGNAL CHARACTERISTICS
C
obo
f
T
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Output Capacitance
Transition Frequency
V
= 10 V, IE = 0, f = 1MHz
CB
I
= 100 mA,VCE = 5 V, f=100MHz
C
pF30
- 75
FSB660/FSB660A Rev. B1
Page 3
T ypical Characteristics
Base-Emitter Saturation
Voltage vs Col lector Curren t
1.4
β = 10
1.2
1
- 40°C
0.8
0.6
0.4
0.2
0.001 0.01 0.1 1 10
T
A
S
E
B
V -BASE-EMITTER SATURATION VOLTAGE(V)
I - CO LL ECTOR CURRENT (A)
25°C
125°C
C
Collector-Emitter Saturation
Voltage vs Collector Current
0.8
β = 10
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.01 0.1 1 10
CESAT
V - COLLECTOR-EMITTER VOLTAGE (V)
I - COLLECTOR CURRENT (A)
C
125 °C
25°C
- 40°C
Base-Emitter On Voltage vs.
Collector Current
1.6
V = 2.0V
ce
1.4
1.2
1
0.8
0.6
0.4
0.2
BEON
0.0001 0.001 0.01 0.1 1 10
V - BASE -EMI TTER ON VOLTAG E ( V)
I - CO LL ECTO R CURR ENT ( A)
C
- 40°C
25°C
125°C
Input/Output Capacitance vs.
Reverse Bias Voltage
400
350
300
C
obo
250
200
150
100
CAPACITANCE (pf)
C
ibo
50
0
0.1 0.5 1 10 20 50 100
V - COLLE CT OR VOLTAGE (V)
CE
V = 2.0V
f = 1.0MH z
ce
Current Gain vs. Collector Curren t
1000
900
125°C
800
700
600
500
25°C
400
300
FE
H - CURRENT GAIN
200
- 40°C
100
0
0.0001 0.001 0.01 0.1 1 10
I - COLLECTOR CURRENT (A)
C
V = 2.0V
ce
FSB660/FSB660A Rev. B1
Page 4
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failure to perform when properly used in accordance
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PRODUCT STA TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
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No Identification Needed
Formative or
In Design
First Production
Full Production
2. A critical component is any component of a life
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support device or system, or to affect its safety or
effectiveness.
This datasheet contains the design specifications for
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This datasheet contains preliminary data, and
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Rev. H3
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