Page 1
FSBCW30
C
E
B
SuperSOTTM-3
PNP General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switches requiring collector currents to 300 mA.
Sourced from Process 68. See BC857A for characteristics.
FSBCW30
Discrete POWER & Signal
Technologies
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
Collector-Emitt er Voltage 32 V
Collector-Base Voltage 32 V
Emitter-Base Volt age 5.0 V
Collector Current - Continuous 500 mA
Operating and Storage Junction Temperature Range -55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
FSBCW30
P
D
R
θ
JA
*Device mounted on FR-4 PCB 4.5" x 5"; mounting pad 0.02 in
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient 250
2
of 2oz copper.
500
4
mW
mW/°C
°C/W
1998 Fairchild Semiconductor Corporation
FSBCW30, Rev B
Page 2
PNP General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
BV
CEO
BV
CBO
BV
CES
BV
EBO
I
CBO
ON CHARACTERISTICS
h
FE
V
sat
CE(
V
BE(on)
SMALL SIGNAL CHARACTERISTICS
NF Noise Figure
Co llec tor-Emitter Brea k do w n
Voltage
Collector-Base Breakdown Voltage
Co llec tor-Emitter Brea k do w n
Voltage
Em itter-Base Breakdown Voltage
Collector-Cutoff Current VCB = 32 V, IE = 0
IC = 2.0 mA, IB = 0 32 V
= 10 µA, IE = 0
I
C
= 10 µA, IE = 0
I
C
= 10 µA, IC = 0
I
E
= 32 V, IE = 0, TA = +100
V
CB
°
C
32 V
32 V
5.0 V
DC Current Gain VCE = 5.0 V, IC = 2.0 mA 215 500
Collector-Emitter Saturation Voltage IC = 10 mA, IB = 0.5 mA 0.30 V
)
Base-Emitt er On Vol tage VCE = 5.0 V, IC = 2.0 mA 0.60 0.75 V
= 5.0 V, IC = 200 µA,
V
CE
= 2.0 kΩ, f = 1.0 kHz,
R
S
= 200 Hz
B
W
100
10
10 dB
nA
µ
FSBCW30
A
FSBCW30, Rev B
Page 3
T ypical Characteristics
FSBCW30
PNP General Purpose Amplifier
(continued)
T y pical Pulsed Current Gain
vs Collector Current
500
125 °C
400
300
25 °C
200
- 40 °C
100
0
0.01 0.1 1 10 100
FE
h - TYPICAL PULSED CURRENT GAIN
I - COLLECTOR CURRENT (mA)
C
V = 5V
CE
Base-Emitter Saturation
Voltage vs Collector Current
1.2
= 10
β
1
BESAT
V - BASE EMITTER VOLTAGE (V)
0.8
0.6
0.4
0.2
- 40 ºC
0
0.1 1 10 100 300
I - COLLECTOR CURRENT (mA)
C
25 °C
125 ºC
Collector-Emitter Saturation
Voltage vs Collector Current
0.3
0.25
β
= 10
0.2
0.15
0.1
0.05
0
0.1 1 10 100 300
CESAT
V - COLLECTOR EMITTER VOLTAGE (V)
I - COLLECTOR CURRENT (mA)
C
125 ºC
25 °C
- 40 ºC
Base Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
0.2
0
BEON
V - BASE EMITTER ON VOLTA GE (V)
- 40 ºC
25 °C
125 ºC
V = 5V
CE
0.1 1 10 100 200
I - COLLECTOR CURRENT (mA)
C
Collector-Cutoff Current
vs. Ambient Temperature
100
V = 50V
CB
10
1
0.1
CBO
0.01
I - COLLECTOR CURRENT (nA)
25 50 75 100 125
T - AMBIENT TEMPERATURE ( C)
A
º
Collector-Emitter Breakdown
Voltage with Resistance
Between Emitter-Base
95
90
85
80
75
70
CER
0.1 1 10 100 1000
BV - BREAKDOWN VOLTAGE (V)
RESISTANCE (k )
Ω
FSBCW30, Rev B
Page 4
Typical Characteristics (continued)
ce
FSBCW30
PNP General Purpose Amplifier
(continued)
Collector Saturation Region
4
3
2
Ic =
100 uA
1
0
CE
V - COLLECTOR-EMITTER VOLTAGE (V)
I - BASE CURRENT (uA)
50 mA
100 300 700 2000 4000
Ta = 25°C
300 mA
Gain Bandwidth Product
vs Collector Current
40
V = 5V
ce
30
20
10
0
1102050100150
T
f - GAIN BANDWIDTH PRODUCT (MHz)
I - COLLECTOR CURRENT (mA)
C
Input and Output Capacitance
vs Revers e Voltage
100
10
CAPACITANCE (pF)
0.1 1 10 100
V - COLLECTOR VOLTAGE(V)
f = 1.0 MHz
Cib
Switching Times vs
Collector Current
300
270
240
210
180
150
120
TIME (nS)
90
60
30
0
10 20 30 50 100 200 300
IB1 = IB2 = Ic / 10
V = 10 V
cc
t
f
t
d
I - COLLECTOR CURRENT (mA)
C
t
r
Cob
t
s
Power Dissipation vs
Ambient Temperature
700
600
500
SOT-23
400
300
200
100
D
P - POWER DISSIPATION (mW)
0
0 25 50 75 100 125 150
TO-92
TEMPERATURE ( C)
o
FSBCW30, Rev B
Page 5
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®
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As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
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failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
Formative or
In Design
First Production
Full Production
Not In Production
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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