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FS7KM-12
Datasheet (POWEREX)
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Datasheet FS7KM-12 Datasheet (POWEREX)

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Page 1
MITSUBISHI Nch POWER MOSFET
FS7KM-12
HIGH-SPEED SWITCHING USE
FS7KM-12
¡VDSS ................................................................................ 600V
¡r
DS (ON) (MAX) .................................................................1.3Ω
¡I
D ............................................................................................ 7A
¡V
iso ................................................................................ 2000V
OUTLINE DRAWING Dimensions in mm
10 ± 0.3 2.8 ± 0.2
3 ± 0.33.6 ± 0.3
15 ± 0.314 ± 0.5
123
w
q
e
6.5 ± 0.3
φ 3.2 ± 0.2
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
2.54 ± 0.252.54 ± 0.25
2.6 ± 0.2
q GATE w DRAIN e SOURCE
0.75 ± 0.15
4.5 ± 0.2
TO-220FN
APPLICATION
SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, per­sonal computer etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol VDSS VGSS ID IDM PD Tch Tstg Viso
—
Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight
Parameter Conditions Ratings Unit
VGS = 0V VDS = 0V
AC for 1minute, Terminal to case Typical value
7 21 35
–55 ~ +150 –55 ~ +150
2000
2.0
V V A A
W
°C °C
Vrms
g
Feb.1999
Page 2
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
V
(BR) DSS
V
(BR) GSS
IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c)
Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance
ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V , VDS = 0V VDS = 600V, VGS = 0V ID = 1mA, VDS = 10V ID = 3A, VGS = 10V ID = 3A, VGS = 10V ID = 3A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 200V, ID = 3A, VGS = 10V, RGEN = RGS = 50Ω
IS = 3A, VGS = 0V Channel to case
MITSUBISHI Nch POWER MOSFET
FS7KM-12
HIGH-SPEED SWITCHING USE
Limits
Min. Typ. Max.
— —
2 — —
3.0 — — — — — — — — —
— — — —
3
1.0
3.0
5.0
1100
17 30 30
35
1.5 —
— —
±10
1.3
3.9 — — — — — — — —
2.0
3.57
V V
µA
mA
1
V
4
Ω
V
S pF pF pF
ns ns ns ns
V
°C/W
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
50
(W)
40
D
30
20
10
POWER DISSIPATION P
0
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
20
PD = 35W
16
(A)
D
12
(TYPICAL)
C
(°C)
V
GS
TC = 25°C Pulse Test
200150100500
6V
= 20V
10V
8V
MAXIMUM SAFE OPERATING AREA
5 3
2
1
10
(A)
D
7 5
3 2
0
10
7 5
3
TC = 25°C
2
DRAIN CURRENT I
–1
10
7 5
23 5710
Single Pulse
1
23 5710223 5710
DRAIN-SOURCE VOLTAGE V
OUTPUT CHARACTERISTICS
(TYPICAL)
(A)
D
10
8
PD = 35W
VGS=20V
10V
8V
6
tw=10µs
100µs
1ms
10ms
DC
DS
(V)
6V
TC = 25°C Pulse Test
3
2
8
4
DRAIN CURRENT I
0
0 1020304050
DRAIN-SOURCE VOLTAGE VDS (V)
5V
4
2
DRAIN CURRENT I
0
0 4 8 12 16 20
DRAIN-SOURCE VOLTAGE VDS (V)
5V
Feb.1999
Page 3
MITSUBISHI Nch POWER MOSFET
FS7KM-12
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
40
32
(V)
24
DS (ON)
16
VOLTAGE V
8
DRAIN-SOURCE ON-STATE
0
0 4 8 12 16 20
GATE-SOURCE VOLTAGE V
TRANSFER CHARACTERISTICS
(TYPICAL)
20
16
(A)
D
12
8
4
DRAIN CURRENT I
TC = 25°C Pulse Test
ID = 14A
10A
GS
TC = 25°C VDS = 50V Pulse Test
7A
3A
(V)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
2.0 TC = 25°C Pulse Test
1.6
(Ω)
1.2
DS (ON)
0.8
0.4
RESISTANCE r
DRAIN-SOURCE ON-STATE
0
–1
5710023 5710123 5710
2310
DRAIN CURRENT I
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
1
10
V
DS
= 10V
7
Pulse Test
5
(S)
3
fs
2
0
10
7 5
3
ADMITTANCE y
FORWARD TRANSFER
2
V
GS
= 10V
20V
2
D
(A)
TC = 25°C
75°C
125°C
0
0 4 8 12 16 20
GATE-SOURCE VOLTAGE V
DRAIN-SOURCE VOLTAGE
2
3
10
7 5
3 2
2
10
7 5
CAPACITANCE
3 2
Ciss, Coss, Crss (pF)
Tch = 25°C
1
10
f = 1MHz
7
GS
= 0V
V
5
23 5710
DRAIN-SOURCE VOLTAGE V
CAPACITANCE VS.
(TYPICAL)
0
23 5710
1
23 5710
GS
Ciss
Coss
Crss
DS
(V)
2
(V)
23
–1
10
10–123 5710
DRAIN CURRENT I
SWITCHING CHARACTERISTICS
(TYPICAL)
3
10
7 5
3 2
2
10
7 5
3
SWITCHING TIME (ns)
2
1
10
–1
23 5710
10
DRAIN CURRENT ID (A)
0
23 5710
D
Tch = 25°C VDD = 200V VGS = 10V
GEN
= R
R
0
23 5710
(A)
GS
t
d(off)
t
t
d(on)
= 50Ω
f
t
r
1
1
Feb.1999
Page 4
MITSUBISHI Nch POWER MOSFET
FS7KM-12
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
20
16
Tch = 25°C ID = 7A
V
DS
= 100V
(V)
GS
200V
12
400V
8
4
GATE-SOURCE VOLTAGE V
0
0 20406080100
GATE CHARGE Q
g
(nC)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(t°C)
(25°C)
DS (ON)
DS (ON)
10
1
7 5
VGS = 10V ID = 1/2I Pulse Test
(TYPICAL)
D
3 2
0
10
7 5
3 2
–1
10
–50
DRAIN-SOURCE ON-STATE RESISTANCE r
DRAIN-SOURCE ON-STATE RESISTANCE r
CHANNEL TEMPERATURE Tch (°C)
0 50 100 150
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
20
TC= 125°C
16
(A)
S
12
8
4
SOURCE CURRENT I
0
0 0.8 1.6 2.4 3.2 4.0
SOURCE-DRAIN VOLTAGE V
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
5.0 VDS = 10V
ID = 1mA
4.0
(V)
3.0
GS (th)
2.0
VOLTAGE V
1.0
GATE-SOURCE THRESHOLD
0
–50 0 50 100 150
CHANNEL TEMPERATURE Tch (°C)
25°C
75°C
VGS = 0V Pulse Test
SD
(V)
BREAKDOWN VOLTAGE VS.
(t°C)
(25°C)
CHANNEL TEMPERATURE
(TYPICAL)
1.4
BR (DSS)
BR (DSS)
VGS = 0V ID = 1mA
1.2
1.0
0.8
0.6
0.4 –50 0 50 100 150
DRAIN-SOURCE BREAKDOWN VOLTAGE V
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
TRANSIENT THERMAL IMPEDANCE
(°C/W)
1
10
7
(ch–c)
5
D=1
th
3
0.5
2
0
10
0.2
7
0.1
5 3
2
–1
10
7 5
3 2
–2
10
–4
23 57
10
10
TRANSIENT THERMAL IMPEDANCE Z
CHARACTERISTICS
0.05
0.02
0.01
Single Pulse
–3
–2
23 57 23 57 23 57
10
10
–1
PULSE WIDTH t
P
10023 57
w
(s)
DM
tw
D=
T
tw
T
10123 57
Feb.1999
10
2
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